Toshiba Semiconductor and Storage TK40E10N1,S1X

Overview

TK40E10N1,S1X from Toshiba is a silicon N-channel power MOSFET in U-MOSⅧ-H process, designed as a high-current switching element in DC-DC converters and motor drives. It delivers 90 A DC drain current, 100 V drain-source breakdown voltage, and ultra-low 6.8 mΩ typical R_DS(ON) at V_GS = 10 V for efficient high-power regulation.

For engineers reviewing the TK40E10N1,S1X datasheet, TK40E10N1,S1X pinout, TK40E10N1,S1X application, or TK40E10N1,S1X equivalent, key selection criteria include avalanche energy rating (74 mJ), thermal resistance (0.99 °C/W channel-to-case), gate charge (49 nC), and TO-220 package compatibility with heatsink mounting.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate structure to achieve low on-resistance and fast switching with controlled gate charge distribution. Its enhancement-mode operation (V_th = 2.0–4.0 V) ensures reliable turn-on under standard logic-level gate drive, while integrated body diode supports synchronous rectification and freewheeling in buck and half-bridge topologies.

The device features rated single-pulse avalanche energy of 74 mJ at T_ch = 25 °C and supports pulsed drain currents up to 171 A. Thermal design is enabled by its 0.99 °C/W channel-to-case resistance when mounted on a heatsink, and its gate threshold voltage remains stable across temperature per Figure 8.9.

Key Specifications

Pinout & Package

TK40E10N1,S1X is housed in a TO-220 package (TOSHIBA designation: 2-10X1A), with exposed drain tab serving as both electrical terminal and thermal interface to heatsink. Weight is 1.93 g (typ.).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP90NF10 and IRF540N, TK40E10N1,S1X offers superior conduction efficiency and switching performance in high-power, high-frequency applications-its 6.8 mΩ R_DS(ON) and 49 nC Q_g enable 30% lower total power loss in 300 kHz VRMs, justifying its use where thermal headroom and efficiency are critical.

Availability

TK40E10N1,S1X is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, solar microinverters, and EV onboard chargers requiring stable component supply and long-term industrial lifecycle support.

Supply support for TK40E10N1,S1X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on industrial reliability and energy efficiency.

The TK40E10N1,S1X belongs to Toshiba's U-MOSⅧ-H power MOSFET family, engineered specifically for high-current, high-frequency switching in power conversion systems where low R_DS(ON), robust avalanche capability, and thermal performance are essential.

FAQ

What is the maximum continuous drain current rating for TK40E10N1,S1X?

The TK40E10N1,S1X is rated for 90 A DC drain current at case temperature (T_c) = 25 °C. This rating assumes proper heatsinking to maintain channel temperature ≤150 °C. At higher case temperatures, derating applies per Figure 8.11; for example, at T_c = 100 °C, the usable DC current drops to approximately 45 A. Always verify thermal design using R_th(ch-c) = 0.99 °C/W.

Does TK40E10N1,S1X support logic-level gate drive?

TK40E10N1,S1X is not a logic-level MOSFET-it requires 10 V gate-source voltage for specified R_DS(ON) performance. Its gate threshold voltage (V_th) ranges from 2.0 to 4.0 V, meaning it will begin conducting at 3.3 V but will not achieve low on-resistance without ≥10 V drive. For true logic-level operation, consider alternatives like the TK40E10N1,S1X's companion part TK35E10N1 with lower V_th spec.

What is the avalanche energy rating of TK40E10N1,S1X and how is it tested?

The TK40E10N1,S1X has a guaranteed single-pulse avalanche energy rating of 74 mJ at T_ch = 25 °C, tested per JEDEC JESD24-11 with V_DD = 80 V, L = 35.9 µH, and I_AR = 40 A. This rating validates its ability to absorb inductive energy during unclamped inductive switching events without failure, making it suitable for flyback, forward, and half-bridge topologies where voltage overshoot may occur.

Can TK40E10N1,S1X be used in parallel configurations?

Yes, TK40E10N1,S1X can be paralleled for higher current capacity, but careful attention must be paid to gate drive layout symmetry, source inductance matching, and thermal coupling. Its positive temperature coefficient for R_DS(ON) (per Figure 8.6) promotes current sharing, but mismatched gate resistances or PCB trace lengths can cause imbalance. Use individual gate resistors and Kelvin source connections to ensure stable parallel operation.

Is TK40E10N1,S1X RoHS compliant and halogen-free?

Yes, TK40E10N1,S1X complies with EU RoHS Directive 2011/65/EU and is halogen-free per Toshiba's environmental specifications. The device uses lead-free plating and meets JEDEC JS-001 ESD classification (HBM Class 2, ≥2 kV). Full compliance documentation-including substance declarations and test reports-is available through Toshiba's official product page or authorized distributors like Digi-Key and Mouser.