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Toshiba Semiconductor and Storage TK40S06N1L,LQ
- Part No.:
- TK40S06N1L,LQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
TK40S06N1L,LQ.pdf
- Description:
- MOSFET N-CH 60V 40A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,618
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Product details
Overview
TK40S06N1L,LQ from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in U-MOSⅧ-H process, designed for high-efficiency switching in automotive and industrial power stages. It delivers 40 A DC drain current, 60 V drain-source breakdown voltage, and ultra-low 8.7 mΩ RDS(ON) at VGS = 10 V, enabling compact motor drivers and synchronous buck regulators.
For engineers reviewing the TK40S06N1L,LQ datasheet, TK40S06N1L,LQ pinout, TK40S06N1L,LQ application, or TK40S06N1L,LQ equivalent, this page provides verified AEC-Q101-qualified parameters, DPAK+ package layout, thermal resistance (1.7 °C/W), gate charge (26 nC), and real-world use context for automotive-grade power conversion design.
Technical Context
This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate structure to achieve low on-resistance while maintaining robust avalanche ruggedness (23.4 mJ) and fast switching (ton = 16 ns, toff = 38 ns). Its enhancement-mode threshold (1.5–2.5 V) supports direct 3.3 V/5 V logic-level drive with minimal gate charge (Qg = 26 nC).
The device integrates a built-in body diode with 46 ns reverse recovery time and 23 nC Qrr, optimized for synchronous rectification in DC-DC converters. Thermal design is anchored by channel-to-case resistance of 1.7 °C/W and 175 °C max channel temperature, validated under AEC-Q101 stress conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Supports 48 V automotive bus systems with 20 % derating margin |
| RDS(ON) (typ.) | 8.7 mΩ at VGS = 10 V - Enables <1.5 W conduction loss at 40 A, reducing heatsink requirements |
| ID (DC) | 40 A - Rated for continuous operation at Tc = 25 °C with proper heatsinking |
| Qg | 26 nC - Low gate drive energy enables efficient 100–500 kHz switching in SMPS |
| EAS | 23.4 mJ - Withstands single-pulse inductive energy in motor commutation or relay snubbing |
| Rth(ch-c) | 1.7 °C/W - Allows 52 W power dissipation at ΔT = 89 °C (175 °C – 86 °C ambient) |
| Vth | 1.5–2.5 V - Compatible with standard microcontroller GPIOs without level-shifting |
Pinout & Package
TK40S06N1L,LQ uses the DPAK+ (TOSHIBA 2-7M1A) surface-mount package with exposed drain pad for thermal and electrical performance. The package weighs 0.36 g and features gull-wing leads compatible with standard reflow profiles.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal; accepts 0–10 V logic input; requires ESD-safe handling per AEC-Q101 |
| 2 | Drain (D) | Main power output node; electrically and thermally connected to exposed heatsink pad |
| 3 | Source (S) | Power return path; referenced to driver ground; forms common node with gate drive return |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive underhood applications including temperature cycling, HTRB, and UIS stress tests |
| Low RDS(ON) | 8.7 mΩ typ. at 10 V drive reduces I²R losses by >35 % vs. legacy U-MOS VI devices in same package |
| Fast switching | 38 ns turn-off time enables high-frequency operation up to 500 kHz with minimized switching loss |
| Robust body diode | 46 ns trr and 23 nC Qrr support reliable synchronous rectification without external Schottky |
| High dVDS/dt immunity | 7.2 V/ns rated ruggedness prevents false turn-on during high-speed switching transients |
Applications
| Automotive Motor Control | Industrial DC-DC Converters |
|---|---|
Use Scenario: Driving 12 V/24 V brushed DC motors in power seats, HVAC blowers, and window lift modules. IC Role / Device Role / Timing Role: High-side or low-side switching element in H-bridge or half-bridge topology. Use Value: AEC-Q101 qualification ensures reliability over 15-year vehicle lifetime; 40 A rating supports peak stall currents without derating. |
Use Scenario: Synchronous rectifier in isolated 48 V–12 V buck converters for server PSUs and telecom power supplies. IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diodes to improve efficiency above 92 %. Use Value: 8.7 mΩ RDS(ON) cuts conduction loss by 60 % vs. 40 V Schottky; low Qrr minimizes reverse recovery loss. |
| Automotive Lighting Drivers | Switching Voltage Regulators |
Use Scenario: PWM dimming control for LED headlamps and daytime running lights (DRL) in ADAS-enabled vehicles. IC Role / Device Role / Timing Role: Low-side switch modulating LED string current at 1–20 kHz. Use Value: 1.5–2.5 V Vth allows direct MCU PWM drive; 175 °C Tch rating withstands under-hood thermal soak. |
Use Scenario: Main switching FET in non-isolated 60 V input buck regulators for industrial PLC I/O modules. IC Role / Device Role / Timing Role: Primary power switch operating at 250 kHz with 40 A load capability. Use Value: 23.4 mJ EAS safely clamps inductive kickback during overcurrent events; DPAK+ pad ensures stable thermal interface. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7 | 60 V, 220 A, 1.8 mΩ RDS(ON), PowerFLAT 5x6 package, no AEC-Q101 certification | Higher current, lower RDS(ON), but lacks automotive qualification and uses different footprint | Preferred for high-current industrial SMPS where AEC-Q101 is not required and PCB layout permits larger package |
| IRF1404ZLPbF | 40 V, 180 A, 3.7 mΩ RDS(ON), TO-220AB package, AEC-Q101 qualified | Lower voltage rating, higher current, through-hole mounting, higher thermal resistance (1.25 °C/W case-to-ambient) | Suitable for cost-sensitive 12–24 V automotive accessories where board space allows through-hole assembly and 40 V margin suffices |
Compared with STL220N6F7 and IRF1404ZLPbF, the TK40S06N1L,LQ uniquely balances AEC-Q101 compliance, 60 V rating, DPAK+ thermal performance (1.7 °C/W), and 40 A/8.7 mΩ capability in a surface-mount automotive-grade package-making it optimal for space-constrained, thermally demanding motor and regulator designs.
Availability
TK40S06N1L,LQ is available at Aetrix Electronics and suitable for automotive motor drivers, industrial DC-DC converters, and switching voltage regulators requiring stable component supply across extended production lifecycles.
Supply support for TK40S06N1L,LQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs high-reliability semiconductor components for automotive, industrial, and consumer applications, with emphasis on power efficiency and long-term manufacturability.
The TK40S06N1L,LQ belongs to Toshiba's U-MOSⅧ-H automotive MOSFET family, engineered specifically for high-current, high-temperature switching in engine control units, body electronics, and powertrain subsystems.
FAQ
Is TK40S06N1L,LQ AEC-Q101 qualified?
Yes, TK40S06N1L,LQ is fully AEC-Q101 qualified per Rev.5.0.A datasheet. It has passed stress tests including high-temperature reverse bias (HTRB), temperature cycling, and unclamped inductive switching (UIS), confirming suitability for automotive underhood applications.
What is the maximum continuous drain current for TK40S06N1L,LQ?
The TK40S06N1L,LQ supports 40 A DC drain current at case temperature Tc = 25 °C. Derating applies above 25 °C per the Safe Operating Area curve in Figure 8.13; at Tc = 100 °C, max ID drops to ~22 A.
Does TK40S06N1L,LQ have a built-in body diode, and what are its characteristics?
Yes, TK40S06N1L,LQ includes an integrated body diode with reverse recovery time (trr) of 46 ns and reverse recovery charge (Qrr) of 23 nC at IDR = 40 A, enabling reliable synchronous rectification without external diodes in buck or flyback topologies.
What package type does TK40S06N1L,LQ use, and is it RoHS compliant?
TK40S06N1L,LQ uses the DPAK+ package (TOSHIBA 2-7M1A), with RoHS-compliant marking indicated by underlined lot numbers per datasheet Rev.5.0.A. It meets Directive 2011/65/EU and contains no lead above threshold limits.
Can TK40S06N1L,LQ be driven directly by a 3.3 V microcontroller?
TK40S06N1L,LQ has a gate threshold voltage (Vth) of 1.5–2.5 V, so it will turn on with 3.3 V drive-but full enhancement requires ≥4.5 V for specified RDS(ON). For 8.7 mΩ performance, a 10 V gate drive is recommended; use a gate driver IC for robust 3.3 V logic interfacing.
TK40S06N1L,LQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- U-MOSVIII-H
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 10.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs:
- 26 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1650 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 88.2W (Tc)
- Operating Temperature:
- 175°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK+
TK40S06N1L,LQ FAQ
1.How can I place an order for TK40S06N1L,LQ through Aetrix?
Please submit a Request for Quotation (RFQ) for TK40S06N1L,LQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK40S06N1L,LQ reliable?
The price and inventory of TK40S06N1L,LQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK40S06N1L,LQ is usually 5 days.
3.What payment methods are accepted for TK40S06N1L,LQ?
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4.How is shipping managed for TK40S06N1L,LQ?
TK40S06N1L,LQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK40S06N1L,LQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK40S06N1L,LQ?
For technical support, including TK40S06N1L,LQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK40S06N1L,LQ requirements.
6.How does Aetrix verify that TK40S06N1L,LQ is sourced from the original manufacturer or authorized distributors?
All TK40S06N1L,LQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK40S06N1L,LQ meets industry standards.
7.What is the process for return or replacement of TK40S06N1L,LQ?
All TK40S06N1L,LQ units undergo pre-shipment inspection (PSI). If there is an issue with TK40S06N1L,LQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK40S06N1L,LQ part is unused and in its original packaging.
Return procedure for TK40S06N1L,LQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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