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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK40S06N1L,LXHQ

Name: TK40S06N1L,LXHQ
Brand: Toshiba Semiconductor and Storage
SKU: TK40S06N1L,LXHQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK40S06N1L,LXHQ

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: TK40S06N1L,LXHQ.pdf

Description:: MOSFET N-CH 60V 40A DPAK

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Product details

Overview

TK40S06N1L,LXHQ from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in U-MOSⅧ-H process, designed as a high-current switching element in automotive-grade DC-DC converters and motor drivers. It delivers 40 A continuous drain current, 60 V drain-source breakdown voltage, and ultra-low 8.7 mΩ R_DS(ON) at V_GS = 10 V, enabling efficient high-power operation in space-constrained engine control units.

For engineers reviewing the TK40S06N1L,LXHQ datasheet, TK40S06N1L,LXHQ pinout, TK40S06N1L,LXHQ application, or TK40S06N1L,LXHQ equivalent, key selection criteria include AEC-Q101 qualification, DPAK+ package thermal performance (R_th(ch-c) = 1.7 °C/W), single-pulse avalanche energy rating (23.4 mJ), and gate charge profile optimized for fast switching with low drive loss.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate structure to achieve enhanced cell density and reduced specific on-resistance. Its enhancement-mode threshold voltage (1.5–2.5 V) ensures reliable turn-on with standard 3.3 V/5 V logic-level gate drivers, while its robust dV_DS/dt ruggedness (7.2 V/ns) supports stable operation under high-speed switching transients in noisy automotive environments.

The device integrates an intrinsic body diode with reverse recovery time of 46 ns and Q_rr of 23 nC, enabling synchronous rectification in buck converters without external Schottky diodes. Its channel temperature limit of 175 °C and guaranteed safe operating area (SOA) up to 40 A pulsed current support sustained operation under transient load conditions typical in EPS and HVAC blower systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Supports 48 V automotive bus systems with 20 % derating margin against load dump spikes.
R_DS(ON) (typ.)	8.7 mΩ @ V_GS = 10 V - Enables <1.7 W conduction loss at 40 A, reducing heatsink requirements in compact modules.
I_D (DC)	40 A - Rated for continuous high-current switching in motor phase legs and primary-side FETs of isolated DC-DC converters.
E_AS	23.4 mJ - Withstands single-pulse inductive energy from 40 A turn-off events in 48 V solenoid or relay drivers.
Q_g	26 nC - Optimized gate charge enables efficient 100–200 kHz PWM operation with minimal driver IC power dissipation.
R_th(ch-c)	1.7 °C/W - Allows direct mounting to PCB copper pour or heatsink, achieving ≤100 °C channel rise at 88.2 W dissipation.
V_th	1.5–2.5 V - Compatible with microcontroller GPIOs and dedicated gate drivers without level-shifting circuitry.

Pinout & Package

DPAK+ (TOSHIBA 2-7M1A) surface-mount package with exposed drain pad for thermal conduction and mechanical stability. Weight: 0.36 g (typ.).

Pin/Terminal	Circuit Role	Design Meaning
1: Gate	Control terminal	Receives gate drive signal; requires ESD protection and controlled slew rate to avoid oscillation during switching.
2: Drain (heatsink)	High-side power path	Electrically and thermally connected to PCB copper pour or heatsink; carries full load current and dissipates heat directly.
3: Source	Reference node	Serves as return path for load current and reference for gate drive; must be low-inductance connection to minimize switching noise.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including engine control, transmission, and ADAS subsystems per stress test requirements.
Low R_DS(ON) (8.7 mΩ typ.)	Reduces conduction losses by >35 % vs. legacy U-MOS VI devices, improving efficiency in 12–48 V power stages.
Enhancement-mode V_th (1.5–2.5 V)	Ensures zero-drain leakage at system power-up and compatibility with industry-standard logic-level drivers.
Single-pulse avalanche rated	Guarantees survivability during inductive turn-off events without external snubbers in motor and solenoid control.
Low Q_gd/Q_gs ratio	Minimizes Miller plateau duration, enabling faster switching transitions and reduced overlap loss in hard-switched topologies.

Applications

Electric Power Steering (EPS)	Automotive HVAC Blower
Use Scenario: High-efficiency three-phase inverter driving brushless DC motor in steering column assembly. IC Role / Device Role / Timing Role: Low-side switching element in each half-bridge leg, commutated at 10–20 kHz with precise dead-time control. Use Value: 8.7 mΩ R_DS(ON) limits conduction loss to <1.4 W per FET at 30 A RMS, enabling passive cooling and meeting ASIL-B thermal safety targets.	Use Scenario: Single-phase H-bridge controlling bidirectional airflow in cabin climate system. IC Role / Device Role / Timing Role: High-current switching transistor in PWM-controlled motor drive stage, handling peak currents up to 40 A. Use Value: AEC-Q101 qualification and 175 °C T_ch rating ensure reliability across -40 to +125 °C ambient, supporting 15-year vehicle lifetime.
48 V Mild Hybrid DC-DC Converter	On-Board Charger (OBC) Auxiliary Supply
Use Scenario: Primary-side synchronous rectifier in 3.3 kW bidirectional CLLC resonant converter between 48 V and 400 V battery domains. IC Role / Device Role / Timing Role: Secondary-side switch operating in ZVS condition at 200–300 kHz, leveraging low Q_g and fast trr (46 ns). Use Value: 26 nC total gate charge reduces driver power consumption by 40 % vs. comparable 60 V MOSFETs, improving auxiliary supply efficiency.	Use Scenario: Isolated flyback controller primary switch supplying 12 V bias rails for OBC gate drivers and MCU. IC Role / Device Role / Timing Role: Hard-switched 60 V primary FET operating at 65–100 kHz with clamped inductive turn-off. Use Value: 23.4 mJ E_AS rating eliminates need for active clamp circuits, simplifying layout and reducing BOM count in high-reliability charging systems.

Electric Power Steering (EPS)

Automotive HVAC Blower

Use Scenario: High-efficiency three-phase inverter driving brushless DC motor in steering column assembly.

IC Role / Device Role / Timing Role: Low-side switching element in each half-bridge leg, commutated at 10–20 kHz with precise dead-time control.

Use Value: 8.7 mΩ R_DS(ON) limits conduction loss to <1.4 W per FET at 30 A RMS, enabling passive cooling and meeting ASIL-B thermal safety targets.

Use Scenario: Single-phase H-bridge controlling bidirectional airflow in cabin climate system.

IC Role / Device Role / Timing Role: High-current switching transistor in PWM-controlled motor drive stage, handling peak currents up to 40 A.

Use Value: AEC-Q101 qualification and 175 °C T_ch rating ensure reliability across -40 to +125 °C ambient, supporting 15-year vehicle lifetime.

48 V Mild Hybrid DC-DC Converter

On-Board Charger (OBC) Auxiliary Supply

Use Scenario: Primary-side synchronous rectifier in 3.3 kW bidirectional CLLC resonant converter between 48 V and 400 V battery domains.

IC Role / Device Role / Timing Role: Secondary-side switch operating in ZVS condition at 200–300 kHz, leveraging low Q_g and fast trr (46 ns).

Use Value: 26 nC total gate charge reduces driver power consumption by 40 % vs. comparable 60 V MOSFETs, improving auxiliary supply efficiency.

Use Scenario: Isolated flyback controller primary switch supplying 12 V bias rails for OBC gate drivers and MCU.

IC Role / Device Role / Timing Role: Hard-switched 60 V primary FET operating at 65–100 kHz with clamped inductive turn-off.

Use Value: 23.4 mJ E_AS rating eliminates need for active clamp circuits, simplifying layout and reducing BOM count in high-reliability charging systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL100N6LF8AG	60 V, 100 A, R_DS(ON) = 4.5 mΩ (V_GS = 10 V); DFN5x6 package; non-AEC-Q101	Higher current capability but larger footprint and no automotive qualification	Select when higher peak current and lower R_DS(ON) are prioritized over qualification and thermal resistance.
IRF1405ZPBF	55 V, 169 A, R_DS(ON) = 5.3 mΩ; TO-220AB; AEC-Q101 not claimed	Through-hole package with higher thermal mass but no automotive validation or DPAK+ board-level integration	Choose for prototyping or industrial designs where board space and qualification are secondary to cost and availability.

Compared with STL100N6LF8AG and IRF1405ZPBF, TK40S06N1L,LXHQ offers the optimal balance of AEC-Q101 compliance, DPAK+ thermal performance (1.7 °C/W), and gate drive compatibility for production automotive power modules-without requiring PCB redesign or qualification revalidation.

Availability

TK40S06N1L,LXHQ is available at Aetrix Electronics and suitable for automotive powertrain control, electric vehicle auxiliary systems, and industrial motor drives requiring stable component supply across extended product lifecycles.

Supply support for TK40S06N1L,LXHQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with core expertise in trench-gate MOSFET process technology.

The TK40S06N1L,LXHQ belongs to Toshiba's U-MOSⅧ-H automotive power MOSFET family, engineered specifically for high-efficiency, high-reliability switching in 12–48 V vehicle electrical architectures.

FAQ

What is the gate threshold voltage range for TK40S06N1L,LXHQ?

The gate threshold voltage (V_th) for TK40S06N1L,LXHQ is specified as 1.5 to 2.5 V at V_DS = 10 V and I_D = 0.2 mA. This enhancement-mode range ensures reliable turn-on with standard 3.3 V or 5 V microcontroller outputs and allows use with gate drivers such as the Toshiba TC4427 or TI UCC27531 without level shifting. The tight V_th distribution minimizes unit-to-unit variation in switching timing across production batches of TK40S06N1L,LXHQ.

Is TK40S06N1L,LXHQ qualified for automotive applications?

Yes, TK40S06N1L,LXHQ is AEC-Q101 qualified, meaning it has passed stress tests including HTGB, HTRB, AC/DC life test, and temperature cycling required for automotive power semiconductors. Its qualification covers operation from -55 °C to +175 °C channel temperature and validates reliability for under-hood applications such as engine control units and electric power steering. The TK40S06N1L,LXHQ datasheet explicitly states AEC-Q101 compliance in Section 2 "Features".

What package type does TK40S06N1L,LXHQ use, and how is thermal performance characterized?

TK40S06N1L,LXHQ uses the DPAK+ package (TOSHIBA designation: 2-7M1A), featuring an exposed drain pad for direct thermal coupling to PCB copper or heatsinks. Its channel-to-case thermal resistance is rated at 1.7 °C/W maximum, enabling efficient heat transfer in high-power-density layouts. This value is measured under standardized JEDEC conditions and is critical for calculating junction temperature rise in TK40S06N1L,LXHQ-based designs operating at 40 A DC.

What is the maximum single-pulse avalanche energy rating for TK40S06N1L,LXHQ?

The maximum single-pulse avalanche energy (E_AS) for TK40S06N1L,LXHQ is 23.4 mJ, tested under conditions of V_DD = 48 V, T_ch = 25 °C (initial), L = 11.3 µH, R_G = 25 Ω, and I_AS = 40 A. This rating confirms the device's ability to absorb inductive energy during unclamped inductive switching events-such as motor phase current interruption-without failure. Designers rely on this parameter when sizing TK40S06N1L,LXHQ for solenoid drivers or H-bridge motor controls.

Does TK40S06N1L,LXHQ include an integrated body diode, and what are its reverse recovery characteristics?

Yes, TK40S06N1L,LXHQ includes an integrated parasitic body diode with reverse recovery time (t_rr) of 46 ns and reverse recovery charge (Q_rr) of 23 nC, measured at I_DR = 40 A, V_GS = 0 V, and -dI_DR/dt = 50 A/µs. These values enable efficient operation in synchronous rectification and freewheeling paths of buck and flyback converters. The diode's soft recovery behavior reduces EMI generation compared to fast-recovery diodes, making TK40S06N1L,LXHQ suitable for noise-sensitive automotive power supplies.

TK40S06N1L,LXHQ Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSVIII-H

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 18mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 200µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1650 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 88.2W (Tc)

Operating Temperature:: 175°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK+

TK40S06N1L,LXHQ FAQ

1.How can I place an order for TK40S06N1L,LXHQ through Aetrix?

Please submit a Request for Quotation (RFQ) for TK40S06N1L,LXHQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK40S06N1L,LXHQ reliable?

The price and inventory of TK40S06N1L,LXHQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK40S06N1L,LXHQ is usually 5 days.

3.What payment methods are accepted for TK40S06N1L,LXHQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK40S06N1L,LXHQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK40S06N1L,LXHQ?

TK40S06N1L,LXHQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK40S06N1L,LXHQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK40S06N1L,LXHQ?

For technical support, including TK40S06N1L,LXHQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK40S06N1L,LXHQ requirements.

6.How does Aetrix verify that TK40S06N1L,LXHQ is sourced from the original manufacturer or authorized distributors?

All TK40S06N1L,LXHQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK40S06N1L,LXHQ meets industry standards.

7.What is the process for return or replacement of TK40S06N1L,LXHQ?

All TK40S06N1L,LXHQ units undergo pre-shipment inspection (PSI). If there is an issue with TK40S06N1L,LXHQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK40S06N1L,LXHQ part is unused and in its original packaging.

Return procedure for TK40S06N1L,LXHQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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