Toshiba Semiconductor and Storage TK42A12N1,S4X

Overview

TK42A12N1,S4X from Toshiba is a silicon N-channel power MOSFET in U-MOSⅧ-H process, designed as a high-current switching element in DC-DC converters and motor drives. It delivers 88 A DC drain current at Tc = 25°C, 120 V drain-source breakdown voltage, and ultra-low 7.8 mΩ (typ.) R_DS(ON) at V_GS = 10 V - enabling high-efficiency 12 V–48 V industrial power supplies.

For engineers reviewing the TK42A12N1,S4X datasheet, TK42A12N1,S4X pinout, TK42A12N1,S4X application, or TK42A12N1,S4X equivalent, key selection criteria include avalanche ruggedness (92 mJ single-pulse), low gate charge (52 nC total), thermal resistance (3.57°C/W channel-to-case), and TO-220SIS package compatibility with forced-air heatsinking in high-density power stages.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate structure to minimize conduction and switching losses simultaneously. Its enhancement-mode threshold (2.0–4.0 V) ensures reliable gate drive with standard 10 V logic-level controllers, while its integrated body diode supports synchronous rectification and freewheeling in buck and half-bridge topologies.

The device features low Crss (16 pF) and optimized Qgd/Qg ratio (15/52 nC), reducing Miller-induced turn-off delay and improving hard-switching robustness. Its guaranteed 150°C channel temperature rating and 42 A pulsed avalanche current support operation under transient overloads without derating in well-ventilated designs.

Key Specifications

Pinout & Package

TK42A12N1,S4X is housed in a TO-220SIS (JEITA SC-67 / Toshiba 2-10U1S) package - a surface-mount compatible variant of TO-220 with isolated tab, enabling direct PCB mounting without insulating hardware. The package weighs 1.7 g and features a thermally efficient copper leadframe.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Compared with STP88N12F7 and IRF1404ZPBF, TK42A12N1,S4X delivers the lowest R_DS(ON) and highest E_AS in TO-220SIS form factor - making it optimal for space-constrained, thermally demanding industrial power stages where gate drive efficiency and avalanche survival are design priorities.

Availability

TK42A12N1,S4X is available at Aetrix Electronics and suitable for industrial DC-DC converters, motor drive half-bridge stages, and server VRM power stages requiring stable component supply and long-term manufacturing continuity.

Supply support for TK42A12N1,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with decades of expertise in silicon MOSFET process technology.

The TK42A12N1,S4X belongs to Toshiba's U-MOSⅧ-H high-efficiency power MOSFET product line, engineered specifically for high-current, high-voltage switching applications in industrial power supplies and motor controls.

FAQ

What is the maximum continuous drain current rating for TK42A12N1,S4X?

The TK42A12N1,S4X is rated for 88 A DC drain current at case temperature (T_c) = 25°C. This rating assumes proper heatsinking and is derated linearly above 25°C per the R_th(ch-c) = 3.57°C/W specification. At T_c = 100°C, the usable DC current drops to approximately 49 A to maintain T_ch ≤ 150°C. Always verify thermal design using actual board layout and airflow conditions before finalizing.

Does TK42A12N1,S4X have an integrated body diode, and what are its key parameters?

Yes, TK42A12N1,S4X includes a monolithic body diode with reverse recovery time (t_rr) of 80 ns and reverse recovery charge (Q_rr) of 190 nC at I_DR = 42 A and -dI_DR/dt = 100 A/µs. These values enable efficient freewheeling in hard-switched topologies and reduce switching loss compared to discrete diode solutions. The diode forward voltage (V_DSF) is -1.2 V (max) at 42 A, confirming low conduction loss during reverse conduction.

Is TK42A12N1,S4X RoHS compliant?

Yes, TK42A12N1,S4X is RoHS compliant per EU Directive 2011/65/EU. The marking notation "[[G]]/RoHS COMPATIBLE" or "[[G]]/RoHS [[Pb]]" appears on the device label depending on production lot. Toshiba confirms compliance through material declarations and third-party testing; full environmental documentation is available upon request from authorized Toshiba distributors or Aetrix Electronics' technical support team.

What gate voltage is required to fully enhance TK42A12N1,S4X?

TK42A12N1,S4X is fully enhanced at V_GS = 10 V, delivering its specified 7.8 mΩ R_DS(ON). Its gate threshold voltage (V_th) ranges from 2.0 V to 4.0 V, meaning measurable drain current begins at ~2 V but conduction is incomplete below 8 V. For reliable operation across temperature and process variation, a minimum 10 V gate drive is recommended - especially in high-current applications where R_DS(ON) directly impacts thermal performance.

Can TK42A12N1,S4X replace older U-MOS VI or U-MOS VII MOSFETs in existing designs?

TK42A12N1,S4X is a drop-in replacement for many legacy U-MOS VI/VII devices in TO-220SIS packages, offering improved R_DS(ON), lower Q_g, and higher E_AS. Pinout and footprint are identical, and absolute maximum ratings align with industry standards. However, due to its lower gate threshold and faster switching, verify gate driver slew rate and PCB layout parasitics - particularly source inductance - to avoid oscillation or overshoot in high-di/dt applications.