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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK42E12N1,S1X

Name: TK42E12N1,S1X
Brand: Toshiba Semiconductor and Storage
SKU: TK42E12N1,S1X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK42E12N1,S1X

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: TK42E12N1,S1X.pdf

Description:: MOSFET N CH 120V 88A TO-220

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Product details

Overview

TK42E12N1,S1X from Toshiba is a silicon N-channel power MOSFET in U-MOSⅧ-H technology, designed as a high-current switching element in DC-DC converters and motor drives. It delivers 88 A DC drain current at Tc = 25°C, features 7.8 mΩ typical R_DS(ON) at V_GS = 10 V, and supports 120 V drain-source breakdown voltage - enabling efficient operation in industrial 48 V bus systems.

For engineers reviewing the TK42E12N1,S1X datasheet, TK42E12N1,S1X pinout, TK42E12N1,S1X application, or TK42E12N1,S1X equivalent, key selection criteria include avalanche energy rating (92 mJ), thermal resistance (0.89 °C/W channel-to-case), gate charge (52 nC), and TO-220 package compatibility with heatsink mounting.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate structure to minimize conduction and switching losses simultaneously. Its enhancement-mode threshold voltage (2.0–4.0 V) ensures reliable turn-on with standard 10 V gate drivers, while low Crss (16 pF) and optimized Qgd/Qsw ratio support fast, low-overshoot switching in hard-switched topologies.

The device integrates an intrinsic body diode with 80 ns reverse recovery time and 190 nC Qrr, suitable for synchronous rectification and freewheeling in buck and half-bridge configurations. Avalanche-rated design (EAS = 92 mJ) allows robust operation under inductive load switching without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	120 V - supports 48 V input systems with ≥2× voltage margin against transients
R_DS(ON) (typ.)	7.8 mΩ at V_GS = 10 V - enables <1 W conduction loss at 42 A continuous current
I_D (DC)	88 A at T_c = 25°C - requires heatsink for sustained full-load operation
E_AS	92 mJ - withstands single-pulse inductive energy without failure in flyback or motor drive faults
Q_g	52 nC - determines gate driver power requirement and switching speed in 100–500 kHz converters
R_th(ch-c)	0.89 °C/W - defines minimum heatsink thermal resistance needed to hold T_ch ≤ 150°C
t_r/t_f	18 ns / 22 ns - enables clean edge transitions with minimal overlap loss in synchronous rectifiers

Pinout & Package

TK42E12N1,S1X is housed in a through-hole TO-220 package (TOSHIBA designation: 2-10X1A), with exposed drain tab serving as both electrical connection and thermal path to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	High-impedance control terminal requiring 10 V drive for full enhancement; ESD-sensitive
2	Drain (heatsink)	Main high-side current path; electrically connected to metal tab for thermal conduction
3	Source	Reference node for gate drive; forms common return path for load current and body diode conduction

Key Features

Feature	Design Value
U-MOSⅧ-H trench process	Reduces R_DS(ON) × Q_g figure-of-merit by 35% vs. prior U-MOS generations, improving efficiency in high-frequency SMPS
Low Crss (16 pF)	Minimizes Miller-induced voltage spikes during dV/dt transitions, reducing risk of false turn-on in high-side configurations
Body diode t_rr = 80 ns	Enables use in non-synchronous buck converters without external Schottky catch diodes in cost-sensitive designs
Avalanche-rated (92 mJ)	Eliminates need for external clamping circuits in relay driving and solenoid control applications with inductive kickback
Enhancement-mode V_th	2.0–4.0 V range ensures compatibility with 3.3 V and 5 V logic-level gate drivers when used with bootstrap or isolated bias supplies

Applications

Server VRM Power Stage	Industrial Motor Drive Inverter
Use Scenario: High-density 48 V input buck converter supplying core voltage to CPU/GPU in datacenter servers. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300–500 kHz with precise dead-time control. Use Value: 7.8 mΩ R_DS(ON) reduces conduction loss by >40% vs. legacy 12 mΩ MOSFETs, directly improving VRM efficiency at 60–80 A loads.	Use Scenario: 3-phase inverter stage controlling 1–3 kW AC induction motors in factory automation equipment. IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid topology handling 42 A pulsed phase current. Use Value: 92 mJ single-pulse avalanche energy withstands motor stall conditions and regenerative braking surges without derating.
Telecom DC-DC Brick	EV Onboard Charger Auxiliary Supply
Use Scenario: Isolated forward converter generating 12 V/10 A auxiliary rail from 380 V DC bus in telecom power systems. IC Role / Device Role / Timing Role: Primary-side active clamp switch managing reset energy and limiting voltage stress on main FET. Use Value: 120 V V_DSS provides sufficient margin over reflected 380 V bus transients, avoiding overvoltage failure during line surges.	Use Scenario: Secondary-side 12 V DC-DC stage powering control logic and gate drivers in bidirectional OBC modules. IC Role / Device Role / Timing Role: Synchronous rectifier in LLC resonant converter operating at 200–300 kHz with zero-voltage switching. Use Value: 80 ns t_rr and low Q_rr (190 nC) reduce reverse recovery loss and EMI generation compared to standard FRDs.

Server VRM Power Stage

Industrial Motor Drive Inverter

Use Scenario: High-density 48 V input buck converter supplying core voltage to CPU/GPU in datacenter servers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300–500 kHz with precise dead-time control.

Use Value: 7.8 mΩ R_DS(ON) reduces conduction loss by >40% vs. legacy 12 mΩ MOSFETs, directly improving VRM efficiency at 60–80 A loads.

Use Scenario: 3-phase inverter stage controlling 1–3 kW AC induction motors in factory automation equipment.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid topology handling 42 A pulsed phase current.

Use Value: 92 mJ single-pulse avalanche energy withstands motor stall conditions and regenerative braking surges without derating.

Telecom DC-DC Brick

EV Onboard Charger Auxiliary Supply

Use Scenario: Isolated forward converter generating 12 V/10 A auxiliary rail from 380 V DC bus in telecom power systems.

IC Role / Device Role / Timing Role: Primary-side active clamp switch managing reset energy and limiting voltage stress on main FET.

Use Value: 120 V V_DSS provides sufficient margin over reflected 380 V bus transients, avoiding overvoltage failure during line surges.

Use Scenario: Secondary-side 12 V DC-DC stage powering control logic and gate drivers in bidirectional OBC modules.

IC Role / Device Role / Timing Role: Synchronous rectifier in LLC resonant converter operating at 200–300 kHz with zero-voltage switching.

Use Value: 80 ns t_rr and low Q_rr (190 nC) reduce reverse recovery loss and EMI generation compared to standard FRDs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP88N12F7	R_DS(ON) = 8.5 mΩ (typ.), higher Q_g = 65 nC, same TO-220 package	Slightly lower switching efficiency at >250 kHz due to higher gate charge	Preferred where gate drive strength is limited and conduction loss dominates
IRFP4227PBF	R_DS(ON) = 7.5 mΩ (typ.), lower E_AS = 65 mJ, different pinout (G-D-S vs. G-S-D)	Not drop-in replaceable; requires PCB layout change and reduced avalanche robustness	Consider only if board redesign is feasible and transient energy is tightly controlled

Compared with STP88N12F7 and IRFP4227PBF, TK42E12N1,S1X offers superior balance of low R_DS(ON), moderate Q_g, and high E_AS - making it optimal for industrial and telecom power stages where reliability under fault conditions is critical.

Availability

TK42E12N1,S1X is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom DC-DC bricks, and EV onboard charger auxiliary supplies requiring stable component supply across multi-year production cycles.

Supply support for TK42E12N1,S1X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with over 50 years of power MOSFET innovation.

TK42E12N1,S1X belongs to Toshiba's U-MOSⅧ-H power MOSFET family, engineered for high-efficiency, high-reliability switching in industrial and infrastructure power conversion systems.

FAQ

What is the maximum continuous drain current rating for TK42E12N1,S1X?

The TK42E12N1,S1X has a maximum DC drain current (I_D) of 88 A at case temperature T_c = 25°C. This rating assumes proper heatsinking - actual usable current drops to 42 A at T_c = 100°C per the derating curve. The device also supports 167 A pulsed drain current (I_DP) for t ≤ 1 ms, making TK42E12N1,S1X suitable for short-duration overload conditions in motor start-up or surge protection circuits.

Does TK42E12N1,S1X have avalanche capability, and how is it specified?

Yes, TK42E12N1,S1X is fully avalanche-rated with a guaranteed single-pulse avalanche energy (E_AS) of 92 mJ at T_ch = 25°C. This rating is measured under standardized conditions: V_DD = 80 V, L = 51.2 µH, and I_AR = 42 A. The device's rugged U-MOSⅧ-H structure ensures repeatable avalanche performance without degradation, enabling TK42E12N1,S1X to safely absorb inductive energy in relay drivers and flyback converters without external protection.

What is the gate threshold voltage range for TK42E12N1,S1X, and how does it affect drive requirements?

The gate threshold voltage (V_th) for TK42E12N1,S1X is specified from 2.0 V to 4.0 V at V_DS = 10 V and I_D = 1.0 mA. This range confirms enhancement-mode operation and ensures reliable turn-on with standard 5 V or 10 V gate drivers. Because V_th is well below typical logic-high levels, TK42E12N1,S1X avoids unintended conduction during slow-rising gate signals - a critical feature for robust operation in noisy industrial environments.

Can TK42E12N1,S1X be used in synchronous rectification applications?

Yes, TK42E12N1,S1X is suitable for synchronous rectification due to its fast body diode characteristics: reverse recovery time (t_rr) of 80 ns and reverse recovery charge (Q_rr) of 190 nC at I_DR = 42 A. These parameters enable efficient replacement of Schottky diodes in secondary-side LLC and forward converters operating up to 300 kHz. When used as a synchronous rectifier, TK42E12N1,S1X must be driven with precise timing to avoid shoot-through, leveraging its low Q_gd/Q_g ratio for clean switching transitions.

What thermal resistance values apply to TK42E12N1,S1X in TO-220 package?

TK42E12N1,S1X exhibits a channel-to-case thermal resistance (R_th(ch-c)) of 0.89 °C/W maximum, measured with the drain tab mounted to a heatsink. Its channel-to-ambient value is 83.3 °C/W without heatsink - but this is not practical for continuous operation. With proper heatsinking, effective R_th(ch-a) can reach 3.57 °C/W (per Note 2), allowing TK42E12N1,S1X to dissipate 140 W at T_c = 25°C while maintaining T_ch ≤ 150°C.

TK42E12N1,S1X Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSVIII-H

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 120 V

Current - Continuous Drain (Id) @ 25°C:: 88A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9.4mOhm @ 21A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 52 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3100 pF @ 60 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

TK42E12N1,S1X FAQ

1.How can I place an order for TK42E12N1,S1X through Aetrix?

Please submit a Request for Quotation (RFQ) for TK42E12N1,S1X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK42E12N1,S1X reliable?

The price and inventory of TK42E12N1,S1X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK42E12N1,S1X is usually 5 days.

3.What payment methods are accepted for TK42E12N1,S1X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK42E12N1,S1X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK42E12N1,S1X?

TK42E12N1,S1X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK42E12N1,S1X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK42E12N1,S1X?

For technical support, including TK42E12N1,S1X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK42E12N1,S1X requirements.

6.How does Aetrix verify that TK42E12N1,S1X is sourced from the original manufacturer or authorized distributors?

All TK42E12N1,S1X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK42E12N1,S1X meets industry standards.

7.What is the process for return or replacement of TK42E12N1,S1X?

All TK42E12N1,S1X units undergo pre-shipment inspection (PSI). If there is an issue with TK42E12N1,S1X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK42E12N1,S1X part is unused and in its original packaging.

Return procedure for TK42E12N1,S1X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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