Toshiba Semiconductor and Storage TK4A53D(STA4,Q,M)
- Part No.:
- TK4A53D(STA4,Q,M)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
TK4A53D(STA4,Q,M).pdf
- Description:
- MOSFET N-CH 525V 4A TO220SIS
- Quantity:
- Payment:

- Shipping:

Inventory:5,468
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Product details
Overview
TK4A53D(STA4,Q,M) from TOSHIBA is a silicon N-channel power MOSFET in the π-MOSⅦ family, designed for high-voltage switching regulator applications. It features 525 V drain-source breakdown voltage, 1.3 Ω typical RDS(ON), 3.0 S typical forward transfer admittance, and 4 A continuous drain current at Tc = 25°C - enabling efficient DC-DC conversion in industrial power supplies.
For engineers reviewing the TK4A53D(STA4,Q,M) datasheet, TK4A53D(STA4,Q,M) pinout, TK4A53D(STA4,Q,M) application, or TK4A53D(STA4,Q,M) equivalent, key selection criteria include avalanche energy rating (252 mJ), gate threshold range (2.4–4.4 V), thermal resistance (3.57 °C/W channel-to-case), and SC-67 package compatibility with high-power board layouts.
Technical Context
This MOSFET operates in enhancement mode with a gate threshold voltage of 2.4–4.4 V, ensuring reliable turn-on under standard 10 V gate drive. Its low RDS(ON) (1.3 Ω typ.) and high |Yfs| (3.0 S typ.) support high-efficiency switching at moderate currents up to 4 A DC.
The device is rated for repetitive avalanche energy (3.5 mJ) and single-pulse avalanche energy (252 mJ under defined test conditions), making it suitable for inductive load switching where transient overvoltage events occur. Thermal design is enabled by a channel-to-case thermal resistance of 3.57 °C/W and maximum channel temperature of 150°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 525 V - supports input voltages up to 400 V DC bus in offline SMPS designs |
| RDS(ON) | 1.3 Ω (typ.) - minimizes conduction loss at 2 A ID, critical for efficiency in 35 W PD-rated converters |
| |Yfs| | 3.0 S (typ.) - enables fast, robust gate control with low drive impedance requirements |
| Vth | 2.4–4.4 V - ensures clean turn-on with standard logic-level or dedicated gate drivers |
| EAS | 252 mJ - withstands single inductive energy spikes without failure in flyback or forward topologies |
| Rth(ch-c) | 3.57 °C/W - allows direct heatsink mounting for thermal management in compact power stages |
| Ciss | 490 pF - defines gate drive strength requirement and impacts switching speed in hard-switched circuits |
Pinout & Package
TK4A53D(STA4,Q,M) is housed in the SC-67 (TOSHIBA 2-10U1B) package - a through-hole, isolated-tab power package with 3 leads and 1.7 g typical weight. The case is electrically connected to the drain terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input | Receives gate drive signal; requires ≤±30 V bias; electrostatic-sensitive - ESD handling required |
| 2 (Drain) | High-side power switch node | Connected to drain of internal MOSFET; electrically tied to metal tab - must be isolated from heatsink unless referenced to same potential |
| 3 (Source) | Power return / reference node | Serves as source terminal and signal ground reference for gate drive; forms low-impedance path for load current return |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) | 1.3 Ω typ. reduces I²R conduction loss in 4 A continuous switching applications |
| High |Yfs| | 3.0 S typ. delivers strong transconductance for stable gain and fast switching response |
| Avalanche ruggedness | 252 mJ single-pulse rating enables reliable operation in inductive switching without external snubbers |
| Enhancement-mode Vth | 2.4–4.4 V range ensures predictable turn-on with common 5 V or 10 V gate drivers |
| Low leakage | IDSS ≤ 10 μA at 525 V supports high-voltage hold-off in standby and light-load modes |
Applications
| Industrial AC-DC Power Supplies | Offline LED Drivers |
|---|---|
Use Scenario: 35 W open-frame AC-DC adapter for factory automation sensors operating from universal 85–264 VAC. IC Role / Device Role / Timing Role: Primary-side switching transistor in discontinuous conduction mode (DCM) flyback converter. Use Value: 525 V VDSS and 252 mJ EAS ensure safe operation during line surges and transformer reset spikes without clamping circuitry. | Use Scenario: Constant-current LED driver for high-bay lighting in warehouses with 277 VAC input. IC Role / Device Role / Timing Role: Main power switch in quasi-resonant (QR) flyback topology driving 40–60 V LED strings. Use Value: 1.3 Ω RDS(ON) and 3.0 S |Yfs| enable high efficiency (>88%) and stable regulation across wide load range. |
| Telecom DC-DC Converters | Industrial Motor Control Stages |
Use Scenario: 48 V input, 12 V/5 A isolated DC-DC module for base station power distribution. IC Role / Device Role / Timing Role: Active clamp forward converter primary switch with synchronous rectification on secondary side. Use Value: 3.57 °C/W Rth(ch-c) allows direct heatsink mounting in space-constrained telecom modules with minimal thermal margin. | Use Scenario: Low-power BLDC motor driver stage for HVAC fan control in commercial building systems. IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration controlling 24 V brushed DC motors up to 100 W. Use Value: 4 A continuous ID and 16 A pulse rating support intermittent torque peaks while maintaining thermal stability at 75°C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP4NK50ZFP | 500 V VDSS, 2.4 Ω RDS(ON), TO-220FP package, no avalanche rating specified | Limited to lower-power (<25 W) flyback due to higher RDS(ON) and unspecified EAS | Acceptable where cost sensitivity outweighs efficiency and surge robustness requirements |
| IXTP4N50D2 | 500 V VDSS, 1.8 Ω RDS(ON), TO-220AB package, 150 mJ EAS | Lower avalanche energy limits use in high-inductance or high-dV/dt environments | Preferred when legacy TO-220 footprint compatibility is mandatory and peak stress is controlled |
Compared with STP4NK50ZFP and IXTP4N50D2, TK4A53D(STA4,Q,M) offers superior avalanche ruggedness (252 mJ), lower on-resistance (1.3 Ω), and SC-67 isolation - making it optimal for thermally demanding, high-reliability industrial switching regulators where layout space and surge immunity are critical.
Availability
TK4A53D(STA4,Q,M) is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, offline LED drivers, and telecom DC-DC converters requiring stable component supply, long-lifecycle assurance, and traceable sourcing.
Supply support for TK4A53D(STA4,Q,M) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with global manufacturing and quality certification to ISO 9001 and IATF 16949.
The π-MOSⅦ series, including TK4A53D(STA4,Q,M), was engineered for high-efficiency, high-voltage switching applications in industrial and infrastructure power supplies - emphasizing avalanche robustness, low conduction loss, and thermal reliability.
FAQ
What is the maximum continuous drain current rating for TK4A53D(STA4,Q,M)?
The TK4A53D(STA4,Q,M) has a maximum continuous drain current (ID) of 4 A at case temperature Tc = 25°C. This rating decreases with rising case temperature per the derating curve in the datasheet, reaching zero at 150°C channel temperature. For sustained 4 A operation, adequate heatsinking maintaining Tc ≤ 25°C is required - confirming TK4A53D(STA4,Q,M) suitability for medium-power SMPS designs.
Does TK4A53D(STA4,Q,M) support avalanche operation, and what are its energy limits?
Yes, TK4A53D(STA4,Q,M) is rated for both single-pulse (EAS = 252 mJ) and repetitive avalanche (EAR = 3.5 mJ) operation under defined test conditions (VDD = 90 V, L = 27 mH, IAR = 4 A). These ratings are validated per JEDEC standards and confirm TK4A53D(STA4,Q,M) capability to safely absorb inductive energy in flyback and forward converters without external protection.
What is the gate threshold voltage range for TK4A53D(STA4,Q,M), and how does it affect drive requirements?
The gate threshold voltage (Vth) for TK4A53D(STA4,Q,M) is specified from 2.4 V to 4.4 V at VDS = 10 V and ID = 1 mA. This range ensures reliable turn-on with standard 5 V logic-level drivers or 10 V gate drivers, while providing noise margin against false triggering. The TK4A53D(STA4,Q,M) requires ≥6 V gate drive for full enhancement and minimal RDS(ON) - consistent with its π-MOSⅦ architecture.
Is TK4A53D(STA4,Q,M) RoHS compliant, and what marking indicates compliance?
Yes, TK4A53D(STA4,Q,M) is RoHS compliant, as indicated by the marking "[[G]]/RoHS COMPATIBLE" or "[[G]]/RoHS [[Pb]]" on the device body. This reflects compliance with Directive 2011/65/EU. Full environmental documentation, including substance declarations and test reports, is available through Toshiba's official product support channels for TK4A53D(STA4,Q,M).
What package type does TK4A53D(STA4,Q,M) use, and how is its thermal performance characterized?
TK4A53D(STA4,Q,M) uses the SC-67 package (JEITA designation), also known as TOSHIBA 2-10U1B - a through-hole, isolated-tab power package. Its thermal resistance from channel to case (Rth(ch-c)) is 3.57 °C/W, enabling direct heatsink mounting. The metal tab is electrically connected to the drain, requiring proper insulation unless drain potential matches heatsink ground - a key layout consideration for TK4A53D(STA4,Q,M) implementation.
TK4A53D(STA4,Q,M) Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- π-MOSVII
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 525 V
- Current - Continuous Drain (Id) @ 25°C:
- 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.7Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 4.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 11 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 490 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 35W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220SIS
TK4A53D(STA4,Q,M) FAQ
1.How can I place an order for TK4A53D(STA4,Q,M) through Aetrix?
Please submit a Request for Quotation (RFQ) for TK4A53D(STA4,Q,M) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK4A53D(STA4,Q,M) reliable?
The price and inventory of TK4A53D(STA4,Q,M) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK4A53D(STA4,Q,M) is usually 5 days.
3.What payment methods are accepted for TK4A53D(STA4,Q,M)?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK4A53D(STA4,Q,M) transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK4A53D(STA4,Q,M)?
TK4A53D(STA4,Q,M) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK4A53D(STA4,Q,M) order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK4A53D(STA4,Q,M)?
For technical support, including TK4A53D(STA4,Q,M) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK4A53D(STA4,Q,M) requirements.
6.How does Aetrix verify that TK4A53D(STA4,Q,M) is sourced from the original manufacturer or authorized distributors?
All TK4A53D(STA4,Q,M) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK4A53D(STA4,Q,M) meets industry standards.
7.What is the process for return or replacement of TK4A53D(STA4,Q,M)?
All TK4A53D(STA4,Q,M) units undergo pre-shipment inspection (PSI). If there is an issue with TK4A53D(STA4,Q,M), returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK4A53D(STA4,Q,M) part is unused and in its original packaging.
Return procedure for TK4A53D(STA4,Q,M):
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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