Toshiba Semiconductor and Storage TK4K1A60F,S4X

Overview

TK4K1A60F,S4X from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in the π-MOSⅣ family, designed for high-voltage switching in offline AC-DC converters and DC-DC power stages. It features 600 V V_DSS, 3.38 Ω R_DS(ON) (typ.), 2 A continuous drain current, TO-220SIS package, and enhancement-mode gate threshold of 2–4 V - enabling direct drive from standard PWM controllers in flyback and LLC resonant topologies.

For engineers reviewing the TK4K1A60F,S4X datasheet, TK4K1A60F,S4X pinout, TK4K1A60F,S4X application, or TK4K1A60F,S4X equivalent, key selection criteria include its 600 V blocking capability, low conduction loss at 1 A, avalanche ruggedness (55 mJ), thermal resistance (R_th(ch-c) = 4.16 °C/W), and suitability for isolated power supplies operating up to 150 °C channel temperature.

Technical Context

This MOSFET employs a planar vertical structure optimized for high-voltage hard-switching applications. Its gate charge profile (Q_g = 8 nC typ., Q_gd = 3.5 nC) supports efficient 100 kHz–500 kHz operation with controlled dv/dt (≥8 V/ns) and minimal switching loss. The integrated body diode exhibits t_rr = 600 ns and Q_rr = 2 µC under specified conditions, supporting quasi-resonant and ZVS designs.

Designed for unclamped inductive switching (UIS) stress, it delivers guaranteed single-pulse avalanche energy of 55 mJ at T_ch = 25 °C. Thermal design is anchored by a low channel-to-case resistance (4.16 °C/W), requiring heatsinking for sustained 2 A operation - consistent with its 30 W power dissipation rating at T_c = 25 °C.

Key Specifications

Pinout & Package

TK4K1A60F,S4X is housed in a TO-220SIS (JEITA SC-67, Toshiba 2-10U1S) package with internal source-isolation - enabling direct mounting to heatsinks without insulating pads. The leadframe is electrically isolated from the drain tab, simplifying thermal management in grounded-drain topologies.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP2NK60ZFP and FQP4N60C, the TK4K1A60F,S4X offers superior thermal mounting flexibility via source-isolated TO-220SIS, lower gate charge for faster switching, and tighter V_th distribution - making it optimal for compact, high-reliability offline power supplies where layout simplicity and avalanche margin are prioritized over maximum current.

Availability

TK4K1A60F,S4X is available at Aetrix Electronics and suitable for AC-DC adapters, industrial relay drivers, and UPS DC-DC stages requiring stable component supply, long-lifecycle support, and RoHS-compliant sourcing.

Supply support for TK4K1A60F,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in discrete transistor reliability and thermal design.

The π-MOSⅣ series - including TK4K1A60F,S4X - was engineered for high-efficiency, high-voltage switching in consumer and industrial power supplies, emphasizing avalanche ruggedness, low gate charge, and source-isolated packaging for simplified thermal integration.

FAQ

What is the maximum continuous drain current rating for TK4K1A60F,S4X?

The TK4K1A60F,S4X has a maximum continuous drain current (I_D) of 2 A at T_c = 25 °C. This rating assumes proper heatsinking - derating is required above 25 °C case temperature per the R_th(ch-c) = 4.16 °C/W specification. At 100 °C case temperature, the usable I_D drops to approximately 1.2 A to maintain T_ch ≤ 150 °C. Always verify thermal design using the SOA curve in Figure 8.17.

Does TK4K1A60F,S4X have an isolated source terminal in its TO-220SIS package?

Yes, the TK4K1A60F,S4X uses the TO-220SIS (SC-67) package where the source terminal is electrically isolated from the metal drain tab. Pin 3 (Source) is fully insulated from the heatsink-mounting surface, allowing direct attachment to grounded heatsinks without insulating hardware - unlike standard TO-220 variants where the drain tab is exposed and conductive.

What is the typical gate threshold voltage range for TK4K1A60F,S4X?

The TK4K1A60F,S4X has a guaranteed gate threshold voltage (V_th) range of 2–4 V, measured at V_DS = 10 V and I_D = 0.19 mA. This enhancement-mode characteristic ensures reliable turn-off at 0 V gate bias and compatibility with standard 3.3 V or 5 V logic outputs - eliminating need for negative gate drive in most applications.

Can TK4K1A60F,S4X be used in avalanche mode, and what is its rated energy?

Yes, the TK4K1A60F,S4X is fully rated for unclamped inductive switching (UIS) with a guaranteed single-pulse avalanche energy (E_AS) of 55 mJ at T_ch = 25 °C. This rating applies under defined test conditions (V_DD = 90 V, L = 24.4 mH, I_AS = 2 A). Repeated avalanche operation requires careful thermal analysis and is not recommended without validation per Toshiba's Reliability Handbook.

What is the typical reverse recovery time of the body diode in TK4K1A60F,S4X?

Under test conditions of I_DR = 2.0 A, V_GS = 0 V, and -dI_DR/dt = 100 A/µs, the TK4K1A60F,S4X exhibits a typical reverse recovery time (t_rr) of 600 ns. Its associated reverse recovery charge (Q_rr) is 2 µC. These values are critical for estimating commutation loss in half-bridge or synchronous rectifier topologies.