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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK4P50D(T6RSS-Q)

Name: TK4P50D(T6RSS-Q)
Brand: Toshiba Semiconductor and Storage
SKU: TK4P50D(T6RSS-Q)
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK4P50D(T6RSS-Q)

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: TK4P50D(T6RSS-Q).pdf

Description:: MOSFET N-CH 500V 4A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

TK4P50D(T6RSS-Q) from Toshiba is a silicon N-channel power MOSFET in the π-MOSⅣ family, designed for high-voltage switching in offline DC-DC converters and AC-DC power supplies. It delivers 500 V drain-source breakdown voltage, 4 A continuous drain current (Tc = 25 °C), and a low 1.7 Ω typical R_DS(ON) at V_GS = 10 V - enabling efficient operation in 200–400 V bus applications such as auxiliary power supplies and LED drivers.

For engineers reviewing the TK4P50D(T6RSS-Q) datasheet, TK4P50D(T6RSS-Q) pinout, TK4P50D(T6RSS-Q) application, or TK4P50D(T6RSS-Q) equivalent, key selection criteria include its DPAK (TO-252) package thermal performance (R_th(ch-c) = 1.56 °C/W), avalanche ruggedness (E_AS = 114 mJ), and gate charge profile (Q_g = 9 nC) for optimized hard-switching efficiency.

Technical Context

This enhancement-mode MOSFET features a threshold voltage range of 2.4–4.4 V (V_DS = 10 V, I_D = 1 mA), ensuring reliable turn-on with standard 5 V or 10 V gate drive. Its low leakage (I_DSS ≤ 10 µA at V_DS = 500 V) supports stable high-voltage hold-off in standby modes.

The device integrates a built-in body diode with reverse recovery time (t_rr) of 800 ns and Q_rr = 4.4 µC under specified conditions, supporting moderate-frequency flyback and forward converter topologies. Dynamic parameters - including C_iss = 380 pF, C_oss = 45 pF, and t_on/t_off = 35/55 ns - reflect its suitability for <100 kHz switching applications with controlled EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500 V - supports direct connection to 380 VAC rectified bus without derating.
R_DS(ON) (typ.)	1.7 Ω at V_GS = 10 V - enables <1.4 W conduction loss at 4 A DC, reducing heatsink requirements.
I_D (DC)	4 A at T_c = 25 °C - defines maximum continuous current under case-cooled conditions.
E_AS	114 mJ - provides single-pulse avalanche energy rating for inductive load switching robustness.
Q_g	9 nC - determines total gate drive charge needed for full turn-on, critical for gate driver sizing.
t_rr	800 ns - body diode reverse recovery time affecting switching loss and snubber design in discontinuous conduction mode.
R_th(ch-c)	1.56 °C/W - channel-to-case thermal resistance enabling ~51 W power dissipation before reaching 150 °C junction limit (ΔT = 80 °C).

Pinout & Package

TK4P50D(T6RSS-Q) uses the JEDEC-standard DPAK (TO-252) surface-mount package, with the drain connected internally to the exposed heatsink pad for low thermal impedance. The package complies with RoHS and weighs 0.36 g (typ.).

Pin/Terminal	Circuit Role	Design Meaning
1: Gate	Control electrode	Receives gate drive signal; requires ≥2.4 V to initiate conduction, with 10 V recommended for full R_DS(ON) specification.
2: Drain (Heatsink)	High-side power terminal	Connected to high-voltage rail (e.g., rectified AC input); electrically and thermally coupled to exposed copper pad for PCB heat spreading.
3: Source	Reference/return node	Serves as common return path for load current and gate drive reference; ties to ground or low-side switch source in half-bridge configurations.

Key Features

Feature	Design Value
Low R_DS(ON)	1.7 Ω typ. at V_GS = 10 V reduces conduction losses in high-current, medium-voltage SMPS stages.
High \|Y_fs\|	1.5 S typ. indicates strong transconductance, improving small-signal gain and gate drive efficiency.
Avalanche-rated	Guaranteed 114 mJ single-pulse energy allows safe operation during inductive switching transients without external clamping.
Enhancement-mode threshold	V_th = 2.4–4.4 V ensures compatibility with standard logic-level and microcontroller-based gate drivers.
Low IDSS leakage	≤10 µA at 500 V enables stable high-voltage blocking in standby or light-load conditions.

Applications

AC-DC Auxiliary Power Supply	Flyback Converter Primary Switch
Use Scenario: Provides isolated 12 V/5 V bias supply for main controller ICs and gate drivers in industrial AC-DC front-ends. IC Role / Device Role / Timing Role: High-side switching element in self-oscillating or PWM-controlled flyback topology operating at 60–100 kHz. Use Value: Low R_DS(ON) minimizes no-load power consumption; avalanche rating eliminates need for external RCD clamp in low-power designs.	Use Scenario: Primary-side power switch in universal-input (85–265 VAC), 15–30 W LED driver modules. IC Role / Device Role / Timing Role: Main switching transistor controlling energy transfer from primary to secondary winding during each PWM cycle. Use Value: 500 V V_DSS accommodates reflected output voltage plus leakage spike margin; t_rr = 800 ns supports clean zero-current switching transitions.
DC-DC Isolated Buck-Boost	Industrial Control Power Module
Use Scenario: Voltage step-up/down conversion in programmable logic controller (PLC) backplane power rails. IC Role / Device Role / Timing Role: Active switch in non-isolated buck-boost or isolated forward converter stage delivering regulated 24 V output. Use Value: DPAK package enables direct mounting to metal-core PCB for thermal management; Q_g = 9 nC allows use with low-power gate drivers like TC4420.	Use Scenario: Input-stage switch in DIN-rail mounted 24 V DC power modules for factory automation sensors and actuators. IC Role / Device Role / Timing Role: Input protection and soft-start switch handling 48 V DC input surges up to 75 V. Use Value: 150 °C max channel temperature and R_th(ch-c) = 1.56 °C/W support continuous operation in enclosed cabinets without forced air cooling.

AC-DC Auxiliary Power Supply

Flyback Converter Primary Switch

Use Scenario: Provides isolated 12 V/5 V bias supply for main controller ICs and gate drivers in industrial AC-DC front-ends.

IC Role / Device Role / Timing Role: High-side switching element in self-oscillating or PWM-controlled flyback topology operating at 60–100 kHz.

Use Value: Low R_DS(ON) minimizes no-load power consumption; avalanche rating eliminates need for external RCD clamp in low-power designs.

Use Scenario: Primary-side power switch in universal-input (85–265 VAC), 15–30 W LED driver modules.

IC Role / Device Role / Timing Role: Main switching transistor controlling energy transfer from primary to secondary winding during each PWM cycle.

Use Value: 500 V V_DSS accommodates reflected output voltage plus leakage spike margin; t_rr = 800 ns supports clean zero-current switching transitions.

DC-DC Isolated Buck-Boost

Industrial Control Power Module

Use Scenario: Voltage step-up/down conversion in programmable logic controller (PLC) backplane power rails.

IC Role / Device Role / Timing Role: Active switch in non-isolated buck-boost or isolated forward converter stage delivering regulated 24 V output.

Use Value: DPAK package enables direct mounting to metal-core PCB for thermal management; Q_g = 9 nC allows use with low-power gate drivers like TC4420.

Use Scenario: Input-stage switch in DIN-rail mounted 24 V DC power modules for factory automation sensors and actuators.

IC Role / Device Role / Timing Role: Input protection and soft-start switch handling 48 V DC input surges up to 75 V.

Use Value: 150 °C max channel temperature and R_th(ch-c) = 1.56 °C/W support continuous operation in enclosed cabinets without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK50ZFP	500 V, 4 A, R_DS(ON) = 1.8 Ω (typ.), Zener-protected gate, TO-220FP package.	Through-hole mounting; higher R_th(j-a) limits ambient-operated power density vs. DPAK.	Prefer when board space allows through-hole assembly and gate transient immunity is prioritized.
IRFBC40APBF	600 V, 3.7 A, R_DS(ON) = 2.0 Ω (typ.), TO-220 package, no avalanche rating.	Higher voltage rating but lower current and no guaranteed E_AS; unsuitable for unclamped inductive loads.	Select only if 600 V margin is mandatory and avalanche stress is absent in system topology.

Compared with STP4NK50ZFP and IRFBC40APBF, TK4P50D(T6RSS-Q) offers superior thermal performance in surface-mount form factor, verified avalanche capability for reliability in flyback designs, and tighter V_th distribution - making it optimal for compact, high-reliability AC-DC auxiliary supplies.

Availability

TK4P50D(T6RSS-Q) is available at Aetrix Electronics and suitable for AC-DC auxiliary power supplies, flyback converter primary switches, and industrial control power modules requiring stable component supply across multi-year production cycles.

Supply support for TK4P50D(T6RSS-Q) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with decades of expertise in discrete power MOSFET design.

TK4P50D(T6RSS-Q) belongs to Toshiba's π-MOSⅣ series - engineered specifically for high-efficiency, high-reliability switching in offline power conversion systems up to 500 V, balancing low on-resistance, fast switching, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current rating for TK4P50D(T6RSS-Q)?

The TK4P50D(T6RSS-Q) has a maximum continuous drain current (I_D) of 4 A at case temperature T_c = 25 °C. This rating assumes adequate heatsinking via the drain-connected DPAK pad. At higher case temperatures, current must be derated per the Safe Operating Area curve in the datasheet - e.g., ~2.5 A at T_c = 100 °C. The TK4P50D(T6RSS-Q) is not rated for 4 A at ambient temperature without thermal management.

Does TK4P50D(T6RSS-Q) have an avalanche energy rating?

Yes, TK4P50D(T6RSS-Q) is fully specified for single-pulse avalanche energy: E_AS = 114 mJ (tested per Note 2: V_DD = 90 V, L = 12.1 mH, I_AR = 4 A). This rating confirms ruggedness against inductive switching transients in flyback, forward, and resonant converters where voltage spikes exceed V_DSS. The TK4P50D(T6RSS-Q) does not specify repetitive avalanche energy.

What is the gate threshold voltage range for TK4P50D(T6RSS-Q)?

The TK4P50D(T6RSS-Q) has a gate threshold voltage (V_th) range of 2.4 V to 4.4 V, measured at V_DS = 10 V and I_D = 1 mA. This ensures turn-on compatibility with both 3.3 V and 5 V logic-level drivers, though full enhancement (to achieve 1.7 Ω R_DS(ON)) requires V_GS ≥ 10 V. The TK4P50D(T6RSS-Q) is not a logic-level MOSFET optimized for 4.5 V drive.

Can TK4P50D(T6RSS-Q) be used in place of a TO-220 MOSFET in the same circuit?

TK4P50D(T6RSS-Q) uses a DPAK (TO-252) surface-mount package, not TO-220. While electrical specs may overlap with some TO-220 parts, direct substitution requires PCB layout revision: different footprint, thermal pad routing, and solder reflow profile. The TK4P50D(T6RSS-Q) offers lower R_th(ch-c) than most TO-220 equivalents but lacks mounting hole and standoff height. Verify mechanical fit and thermal interface before replacing.

Is TK4P50D(T6RSS-Q) RoHS compliant and lead-free?

Yes, TK4P50D(T6RSS-Q) is RoHS compliant and lead-free, as confirmed by Toshiba's official product documentation and packaging data. The "(T6RSS-Q)" suffix denotes tape-and-reel packaging with RoHS-compliant termination finish. No lead-based solder or hazardous substances exceeding EU RoHS Directive limits are used in the TK4P50D(T6RSS-Q) manufacturing process.

TK4P50D(T6RSS-Q) Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: π-MOSVII

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2Ohm @ 2A, 10V

Vgs(th) (Max) @ Id:: 4.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 9 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 380 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 80W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

TK4P50D(T6RSS-Q) FAQ

1.How can I place an order for TK4P50D(T6RSS-Q) through Aetrix?

Please submit a Request for Quotation (RFQ) for TK4P50D(T6RSS-Q) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK4P50D(T6RSS-Q) reliable?

The price and inventory of TK4P50D(T6RSS-Q) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK4P50D(T6RSS-Q) is usually 5 days.

3.What payment methods are accepted for TK4P50D(T6RSS-Q)?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK4P50D(T6RSS-Q) transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK4P50D(T6RSS-Q)?

TK4P50D(T6RSS-Q) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK4P50D(T6RSS-Q) order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK4P50D(T6RSS-Q)?

For technical support, including TK4P50D(T6RSS-Q) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK4P50D(T6RSS-Q) requirements.

6.How does Aetrix verify that TK4P50D(T6RSS-Q) is sourced from the original manufacturer or authorized distributors?

All TK4P50D(T6RSS-Q) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK4P50D(T6RSS-Q) meets industry standards.

7.What is the process for return or replacement of TK4P50D(T6RSS-Q)?

All TK4P50D(T6RSS-Q) units undergo pre-shipment inspection (PSI). If there is an issue with TK4P50D(T6RSS-Q), returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK4P50D(T6RSS-Q) part is unused and in its original packaging.

Return procedure for TK4P50D(T6RSS-Q):

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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