Toshiba Semiconductor and Storage TK4P60D,RQ

Overview

TK4P60D,RQ from Toshiba is a silicon N-channel power MOSFET in DPAK (2-7K1S) package, designed for high-voltage switching applications. It features 600 V drain-source breakdown voltage, 1.4 Ω typical R_DS(ON) at V_GS = 10 V and I_D = 2 A, 2.5 S typical forward transfer admittance, and 4 A DC drain current rating - enabling efficient operation in offline SMPS and industrial power supplies.

For engineers reviewing the TK4P60D,RQ datasheet, TK4P60D,RQ pinout, TK4P60D,RQ application, or TK4P60D,RQ equivalent, key selection criteria include its 600 V V_DSS, low conduction loss at 4 A load, thermal resistance of 1.25 °C/W (ch-to-case), and suitability for hard-switched flyback and forward converters operating up to 150 °C channel temperature.

Technical Context

This π-MOSⅣ-series MOSFET employs planar V-groove gate structure optimized for high-voltage ruggedness and fast switching with controlled Q_g (12 nC typ.) and low C_iss (600 pF typ.). Its enhancement-mode threshold (2.4–4.4 V) ensures reliable gate drive compatibility with standard 10 V logic-level controllers.

Designed for unidirectional high-side or low-side switching, it supports avalanche energy handling (158 mJ single-pulse) and integrates a body diode with 1200 ns reverse recovery time and 7 µC Q_rr, making it suitable for non-synchronous topologies where diode conduction occurs during dead time.

Key Specifications

Pinout & Package

TK4P60D,RQ is housed in a surface-mount DPAK (Toshiba 2-7K1S) package with exposed drain pad for thermal and electrical connection to PCB ground plane. The package weighs 0.36 g and features gull-wing leads compatible with standard reflow profiles.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP4NK60ZFP and FQP4N60CT, TK4P60D,RQ offers superior thermal performance via DPAK's 1.25 °C/W ch-to-case resistance and lower R_DS(ON), enabling higher power density in space-constrained SMT designs without sacrificing ruggedness.

Availability

TK4P60D,RQ is available at Aetrix Electronics and suitable for industrial switching power supplies, AC-DC adapters, LED driver power stages, and DC-DC boost converters requiring stable component supply and long-term manufacturability.

Supply support for TK4P60D,RQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions with emphasis on reliability and industrial-grade performance.

The TK4P60D,RQ belongs to Toshiba's π-MOSⅣ family of high-voltage N-channel MOSFETs, engineered specifically for energy-efficient, compact AC/DC and DC/DC conversion in industrial and commercial power systems.

FAQ

What is the maximum continuous drain current rating for TK4P60D,RQ?

The TK4P60D,RQ has a DC drain current rating of 4 A at T_c = 25 °C. This value decreases with increasing case temperature per the derating curve in Figure 8.11; at T_c = 100 °C, the usable I_D drops to approximately 2.5 A. Designers must ensure thermal design maintains T_c within limits to sustain full rated current. The TK4P60D,RQ datasheet specifies this limit under "Absolute Maximum Ratings" section 4.

Does TK4P60D,RQ have avalanche capability, and how is it specified?

Yes, TK4P60D,RQ is rated for single-pulse avalanche energy of 158 mJ (E_AS) under test conditions of V_DD = 90 V, T_ch = 25 °C, L = 17.3 mH, R_G = 25 Ω, and I_AR = 4 A. This rating is defined in Note 2 of Section 4 and confirmed in Figure 8.15. The TK4P60D,RQ does not specify repetitive avalanche capability, so designers should avoid repeated avalanche events in normal operation.

What is the gate threshold voltage range for TK4P60D,RQ, and why does it matter?

The TK4P60D,RQ has a gate threshold voltage (V_th) range of 2.4 V to 4.4 V at V_DS = 10 V and I_D = 1 mA. This range ensures reliable turn-on with standard 5 V or 10 V gate drivers while preventing accidental activation from noise or leakage. Because V_th varies with temperature (see Figure 8.10), the TK4P60D,RQ remains functional across –55 °C to 150 °C storage and operating ranges.

Can TK4P60D,RQ be used in synchronous rectification topologies?

No - TK4P60D,RQ is not optimized for synchronous rectification. Its body diode has 1200 ns reverse recovery time and 7 µC Q_rr, which introduces significant switching loss if used as a freewheeling device in high-frequency synchronous buck or LLC topologies. For such roles, dedicated low-Q_rr, logic-level MOSFETs like the TK4P60D,RQ's complementary P-channel counterparts or Schottky-assisted designs are preferred.

What package type is used for TK4P60D,RQ, and what are its thermal advantages?

TK4P60D,RQ uses the DPAK (Toshiba 2-7K1S) surface-mount package with an exposed drain pad that serves as both electrical connection and thermal path. Its channel-to-case thermal resistance is 1.25 °C/W, significantly lower than TO-220 or IPAK alternatives. This allows efficient heat transfer directly to PCB copper pours or small heatsinks - a key advantage for compact, convection-cooled TK4P60D,RQ-based power supplies.