Toshiba Semiconductor and Storage TK4R1A10PL,S4X

Overview

TK4R1A10PL,S4X from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel U-MOS-H power MOSFET designed for high-efficiency switching in primary-side power stages. It delivers R_DS(ON) = 3.5 mΩ (typ.) at V_GS = 10 V, Q_SW = 29 nC (typ.), and supports 100 V V_DSS, 80 A I_D (DC), and 500 A pulsed drain current - enabling use in high-current DC-DC converters and motor drivers.

For engineers reviewing the TK4R1A10PL,S4X datasheet, TK4R1A10PL,S4X pinout, TK4R1A10PL,S4X application, or TK4R1A10PL,S4X equivalent, key selection criteria include its low gate charge, avalanche-rated ruggedness (E_AS = 141 mJ), TO-220SIS package thermal performance (R_th(ch-c) = 2.77 °C/W), and verified operation under 80 V bus conditions with 40 A continuous conduction.

Technical Context

This MOSFET employs Toshiba's U-MOS-H trench-gate structure to achieve simultaneous low R_DS(ON) and reduced gate charge. Its enhancement-mode threshold (V_th = 1.5–2.5 V) ensures reliable turn-on with standard 4.5 V logic-level gate drivers, while the integrated body diode supports synchronous rectification and freewheeling in buck and half-bridge topologies.

The device is rated for single-pulse avalanche energy of 141 mJ at T_c = 25 °C and features guaranteed safe operating area (SOA) up to 80 A at 50 V. Its C_iss = 6320 pF and C_oss = 950 pF support stable high-frequency switching up to 500 kHz in hard-switched applications when paired with appropriate gate drive impedance.

Key Specifications

Pinout & Package

TK4R1A10PL,S4X is housed in a TO-220SIS (TOSHIBA 2-10U1S) package with isolated mounting tab, enabling direct heatsink attachment without electrical isolation hardware. The package weighs 1.56 g and features screw-mount compatibility with 0.6 N·m torque specification.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP110N10F7 and IRF3205PBF, TK4R1A10PL,S4X provides 14 % lower R_DS(ON), 22 % lower Q_g, and a certified 141 mJ avalanche capability - making it the preferred choice for thermally constrained, high-reliability 100 V switching applications requiring field-proven ruggedness.

Availability

TK4R1A10PL,S4X is available at Aetrix Electronics and suitable for high-efficiency DC-DC converters, switching voltage regulators, and motor drivers requiring stable component supply across extended production lifecycles.

Supply support for TK4R1A10PL,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on reliability, efficiency, and industrial-grade robustness.

The TK4R1A10PL,S4X belongs to Toshiba's U-MOS-H high-performance power MOSFET product line, engineered specifically for high-current, high-frequency switching in server power supplies, telecom infrastructure, and industrial motor control systems.

FAQ

What is the maximum continuous drain current for TK4R1A10PL,S4X at 100 °C case temperature?

The TK4R1A10PL,S4X supports 80 A DC drain current at T_c = 25 °C. At T_c = 100 °C, derating per the PD–Tc curve (Fig. 8.14) yields ~32 A continuous. This value is confirmed by the guaranteed maximum power dissipation curve and thermal resistance R_th(ch-c) = 2.77 °C/W. Always verify actual channel temperature using the SOA chart (Fig. 8.15) for your specific layout and cooling conditions. TK4R1A10PL,S4X must remain within its 175 °C channel temperature limit.

Does TK4R1A10PL,S4X have a fully rated avalanche capability, and what test conditions apply?

Yes, TK4R1A10PL,S4X is fully specified for single-pulse avalanche with E_AS = 141 mJ (typ.) at T_c = 25 °C, V_DD ≈ 80 V, L = 17 µH, and I_AS = 80 A. This rating is guaranteed per Note 3 in the Absolute Maximum Ratings table and validated via standardized unclamped inductive switching tests. TK4R1A10PL,S4X does not specify repetitive avalanche capability, so system design must ensure only single-event stress occurs. Refer to Fig. 8.15 for SOA-limited avalanche boundaries.

Can TK4R1A10PL,S4X be driven directly by a 3.3 V microcontroller GPIO without a gate driver?

No - while TK4R1A10PL,S4X has a low V_th range (1.5–2.5 V), its R_DS(ON) is only guaranteed at V_GS = 10 V (3.5 mΩ typ.). At 3.3 V, R_DS(ON) rises sharply (>25 mΩ), increasing conduction loss by >7×. Driving TK4R1A10PL,S4X directly from 3.3 V logic risks thermal runaway under load. A dedicated gate driver (e.g., TC4420) is required to deliver full 10 V gate voltage and sink/source the 104 nC Q_g efficiently.

What is the isolation voltage rating of the TO-220SIS package used in TK4R1A10PL,S4X?

The TO-220SIS package of TK4R1A10PL,S4X provides V_ISO(RMS) = 2000 V between the isolated metal tab (drain-connected) and leads. This rating is tested per IEC 60747-9 and enables direct heatsink mounting without insulating pads in grounded-chassis systems. The isolation is maintained under 0.6 N·m mounting torque and remains valid across the full storage temperature range (−55 to +175 °C). TK4R1A10PL,S4X leverages this for simplified thermal design in high-voltage industrial inverters.

How does the body diode performance of TK4R1A10PL,S4X compare to standard MOSFETs in synchronous rectification?

TK4R1A10PL,S4X features an optimized body diode with t_rr = 117 ns (typ.) and Q_rr = 500 nC (max) at I_DR = 20 A and −dI_DR/dt = 100 A/µs. This is 35–40 % faster recovery than legacy TO-220 MOSFETs (e.g., IRF3205), reducing voltage spikes and EMI in synchronous buck converters. When used in freewheeling paths, TK4R1A10PL,S4X's low Q_rr cuts reverse recovery loss by up to 30 % compared to non-optimized devices - a key advantage confirmed in Section 6.4 of the TK4R1A10PL,S4X datasheet.