Toshiba Semiconductor and Storage TK4R3A06PL,S4X

Overview

TK4R3A06PL,S4X from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel U-MOS-H power MOSFET designed for high-frequency switching in primary-side power stages. It delivers 68 A DC drain current, 60 V drain-source voltage rating, and ultra-low 3.3 mΩ R_DS(ON) at V_GS = 10 V, enabling high-efficiency operation in synchronous buck converters and motor drive half-bridges.

For engineers reviewing the TK4R3A06PL,S4X datasheet, TK4R3A06PL,S4X pinout, TK4R3A06PL,S4X application, or TK4R3A06PL,S4X equivalent, key selection criteria include its 15.1 nC gate switch charge, 39 nC output charge, TO-220SIS package with isolated source terminal, and guaranteed avalanche energy of 34 mJ - all critical for hard-switched industrial DC-DC designs.

Technical Context

This MOSFET employs Toshiba's U-MOS-H trench-gate process to achieve low conduction loss and fast switching dynamics. Its enhancement-mode threshold (1.5–2.5 V) enables direct drive from standard 3.3 V/5 V logic controllers, while the integrated body diode supports freewheeling in non-synchronous topologies.

The device features isolated-source TO-220SIS packaging with internal thermal resistance of 4.16 °C/W (ch-to-case), supporting high-power density layouts. Its dynamic parameters - including 3280 pF input capacitance and 60 pF reverse transfer capacitance at V_DS = 30 V - are optimized for ZVS-capable resonant converter stages.

Key Specifications

Pinout & Package

TK4R3A06PL,S4X uses the TO-220SIS (TOSHIBA 2-10U1S) package - a thermally enhanced variant of TO-220 with electrically isolated source terminal and 1.56 g mass. The package provides 2000 V_RMS isolation between drain and mounting surface, enabling direct heatsink attachment without insulating pads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Compared with IRFP4368PBF and STP60NF06, TK4R3A06PL,S4X offers superior thermal interface flexibility via TO-220SIS isolation, lower Q_SW, and documented 34 mJ avalanche capability - making it optimal for compact, high-reliability industrial power stages where layout simplification and surge immunity are critical.

Availability

TK4R3A06PL,S4X is available at Aetrix Electronics and suitable for high-efficiency DC-DC converters, switching voltage regulators, and motor drivers requiring stable component supply across multi-year production cycles.

Supply support for TK4R3A06PL,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with global distribution and automotive-grade qualification capabilities.

The TK4R3A06PL,S4X belongs to Toshiba's U-MOS-H series of high-performance N-channel MOSFETs engineered specifically for high-frequency, high-current power conversion in industrial and telecom infrastructure equipment.

FAQ

What is the maximum continuous drain current rating for TK4R3A06PL,S4X?

The TK4R3A06PL,S4X has a maximum DC drain current (I_D) rating of 68 A at T_c = 25 °C. This value assumes proper heatsinking and derating per the datasheet's PD–T_c curve; actual usable current decreases to ~42 A at T_c = 100 °C. The device also supports 350 A pulsed drain current for t ≤ 100 µs, enabling robust short-circuit tolerance in motor drive applications. Always verify thermal design using R_th(ch-c) = 4.16 °C/W.

Does TK4R3A06PL,S4X have an integrated body diode, and what are its recovery characteristics?

Yes, TK4R3A06PL,S4X includes a monolithic body diode with typical reverse recovery time (t_rr) of 57 ns and reverse recovery charge (Q_rr) of 350 nC at I_DR = 17 A and -dI_DR/dt = 100 A/µs. These values indicate fast but non-soft recovery behavior, making the device suitable for synchronous rectification but requiring careful attention to ringing in non-synchronous flyback or buck-boost topologies. The diode's forward voltage is 1.5 V (max) at 17 A.

What is the gate threshold voltage range for TK4R3A06PL,S4X, and how does it affect drive circuit design?

The TK4R3A06PL,S4X has a gate threshold voltage (V_th) range of 1.5 V to 2.5 V at V_DS = 10 V and I_D = 0.5 mA. This low, tightly controlled V_th allows direct interfacing with 3.3 V logic without level-shifting, while ensuring full turn-off at 0 V gate bias. However, designers must ensure gate drive overshoot stays within ±20 V absolute maximum to prevent gate oxide damage - a 10 V nominal drive is recommended for robust R_DS(ON) performance.

How is thermal performance characterized for TK4R3A06PL,S4X, and what is the channel-to-case resistance?

TK4R3A06PL,S4X specifies a maximum channel-to-case thermal resistance (R_th(ch-c)) of 4.16 °C/W under T_c = 25 °C conditions. This value reflects the thermal path from silicon die to the metal tab (drain terminal), enabling accurate junction temperature estimation using T_ch = T_c + (P_D × R_th(ch-c)). The channel-to-ambient resistance is 62.5 °C/W, but this is highly layout-dependent and intended only for preliminary estimates - actual system-level thermal design must account for PCB copper area, airflow, and heatsink interface.

Is TK4R3A06PL,S4X RoHS compliant, and what marking indicates compliance?

Yes, TK4R3A06PL,S4X is RoHS compliant. Per Toshiba documentation, RoHS-compliant units are marked with an underlined lot number followed by [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]. Non-RoHS versions carry an unmarked (not underlined) lot number and [[Pb]]/INCLUDES > MCV. Customers should verify marking on received units and consult their Toshiba sales representative for formal compliance documentation and substance declarations.