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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK4R3E06PL,S1X

Name: TK4R3E06PL,S1X
Brand: Toshiba Semiconductor and Storage
SKU: TK4R3E06PL,S1X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK4R3E06PL,S1X

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: TK4R3E06PL,S1X.pdf

Description:: MOSFET N-CH 60V 80A TO220

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Product details

Overview

TK4R3E06PL,S1X from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel U-MOS-H power MOSFET designed for high-current, high-efficiency switching in the primary side of DC-DC converters and motor drive half-bridges. It delivers R_DS(ON) = 3.3 mΩ (typ.) at V_GS = 10 V, Q_SW = 15.1 nC (typ.), and supports continuous drain current up to 80 A with 60 V V_DSS rating.

For engineers reviewing the TK4R3E06PL,S1X datasheet, TK4R3E06PL,S1X pinout, TK4R3E06PL,S1X application, or TK4R3E06PL,S1X equivalent, key selection criteria include its low gate charge for fast switching, TO-220 package thermal performance (R_th(ch-c) = 1.72 °C/W), and verified avalanche capability (E_AS = 29 mJ) in hard-switching topologies.

Technical Context

This MOSFET employs Toshiba's U-MOS-H trench-gate process to achieve optimized trade-offs between conduction loss and switching loss. Its enhancement-mode operation (V_th = 1.5–2.5 V) enables direct drive from standard 5 V or 3.3 V logic-level controllers without gate drivers in many applications.

The device integrates a robust body diode with t_rr = 57 ns (typ.) and Q_rr = 350 nC (max), supporting synchronous rectification and freewheeling in buck and half-bridge configurations. Its guaranteed single-pulse avalanche energy (29 mJ) and rated I_AS = 80 A allow safe operation under inductive load turn-off stress.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage for use in 48 V bus systems and industrial SMPS
R_DS(ON)	3.3 mΩ (typ. at V_GS = 10 V) - Enables <1 W conduction loss at 50 A, reducing heatsink requirements
Q_SW	15.1 nC (typ.) - Low total switching charge supports >500 kHz operation with minimal driver loss
E_AS	29 mJ - Guaranteed avalanche energy allows reliable operation during inductive turn-off transients
I_D (DC)	80 A (T_c = 25 °C) - High continuous current capacity suitable for high-power motor phase legs
R_th(ch-c)	1.72 °C/W - Enables efficient heat transfer to heatsink in TO-220 mounting configuration
V_th	1.5–2.5 V - Logic-compatible threshold ensures clean turn-on with microcontroller GPIO or PWM IC outputs

Pinout & Package

Package: TO-220 (TOSHIBA 2-10X1A), through-hole, heatsink-connected drain tab. Weight: 1.96 g (typ.).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives gate drive signal; requires ≤±20 V rating and careful ESD handling
2 (Drain)	High-side power path / Heatsink connection	Electrically connected to metal tab; must be isolated from chassis unless referenced to ground
3 (Source)	Reference node for gate drive and current sensing	Serves as return path for load current and reference for gate-source voltage control

Key Features

Feature	Design Value
U-MOS-H trench structure	Reduces cell pitch and channel resistance, enabling lower R_DS(ON) without sacrificing breakdown margin
Low Q_oss	39 nC (typ.) - Minimizes Miller-induced switching delay and improves hard-switching efficiency
Body diode with controlled Q_rr	Q_rr = 350 nC (max) - Limits reverse recovery loss and EMI in non-synchronous topologies
Enhancement-mode V_th	1.5–2.5 V range - Ensures predictable turn-on behavior across temperature and process variation
Avalanche-rated design	Guaranteed E_AS = 29 mJ - Eliminates need for external snubbers in inductive switching applications

Applications

High-Efficiency DC-DC Converters	Switching Voltage Regulators
Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward or half-bridge converter. IC Role / Device Role / Timing Role: Main power switch conducting high-frequency AC current into transformer primary winding. Use Value: Low R_DS(ON) and Q_SW reduce total losses below 2.5 W at 50 A/500 kHz, improving system efficiency by ≥1.2% over legacy MOSFETs.	Use Scenario: High-current synchronous buck regulator for FPGA core voltage (0.8–1.2 V @ 60 A). IC Role / Device Role / Timing Role: High-side switch controlling duty-cycle-dependent energy transfer to output inductor. Use Value: Fast switching and low gate charge enable precise 100–300 ns dead-time control, minimizing shoot-through risk and improving transient response.
Motor Drivers	Industrial Power Supplies
Use Scenario: Phase-leg switch in 3-phase BLDC inverter for HVAC compressors (2–5 kW). IC Role / Device Role / Timing Role: One of three high-current switches implementing six-step commutation with PWM modulation. Use Value: 80 A DC rating and 175 °C T_ch limit support continuous 4 kW thermal load with forced-air cooling, eliminating derating penalties.	Use Scenario: Output rectifier in telecom-grade 48 V offline PSUs with active PFC front-end. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diodes to reduce conduction loss. Use Value: Body diode t_rr = 57 ns (typ.) and low V_DSF = −1.5 V enable efficient freewheeling with <0.8 W loss at 40 A, cutting secondary-side heat by 35%.

High-Efficiency DC-DC Converters

Switching Voltage Regulators

Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward or half-bridge converter.

IC Role / Device Role / Timing Role: Main power switch conducting high-frequency AC current into transformer primary winding.

Use Value: Low R_DS(ON) and Q_SW reduce total losses below 2.5 W at 50 A/500 kHz, improving system efficiency by ≥1.2% over legacy MOSFETs.

Use Scenario: High-current synchronous buck regulator for FPGA core voltage (0.8–1.2 V @ 60 A).

IC Role / Device Role / Timing Role: High-side switch controlling duty-cycle-dependent energy transfer to output inductor.

Use Value: Fast switching and low gate charge enable precise 100–300 ns dead-time control, minimizing shoot-through risk and improving transient response.

Motor Drivers

Industrial Power Supplies

Use Scenario: Phase-leg switch in 3-phase BLDC inverter for HVAC compressors (2–5 kW).

IC Role / Device Role / Timing Role: One of three high-current switches implementing six-step commutation with PWM modulation.

Use Value: 80 A DC rating and 175 °C T_ch limit support continuous 4 kW thermal load with forced-air cooling, eliminating derating penalties.

Use Scenario: Output rectifier in telecom-grade 48 V offline PSUs with active PFC front-end.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diodes to reduce conduction loss.

Use Value: Body diode t_rr = 57 ns (typ.) and low V_DSF = −1.5 V enable efficient freewheeling with <0.8 W loss at 40 A, cutting secondary-side heat by 35%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF55-08	R_DS(ON) = 8 mΩ (higher), Q_g = 120 nC (much higher), TO-220 package	Lower switching speed limits usable frequency to ≤150 kHz; better suited for low-frequency motor drives than high-efficiency SMPS	Choose when cost sensitivity outweighs efficiency targets and layout space permits larger heatsink
IRF1404ZPBF	R_DS(ON) = 4.7 mΩ (higher), Q_SW = 22 nC (higher), same TO-220 footprint	Higher conduction and switching losses increase junction temperature by ~12 °C at 50 A/250 kHz vs. TK4R3E06PL,S1X	Acceptable for legacy designs where PCB layout reuse is critical and efficiency loss ≤0.8% is tolerable

Compared with STP80NF55-08 and IRF1404ZPBF, TK4R3E06PL,S1X delivers superior high-frequency efficiency due to its 3.3 mΩ R_DS(ON) and 15.1 nC Q_SW, making it optimal for compact, thermally constrained 48 V DC-DC and motor drive designs where thermal margin and switching loss dominate.

Availability

TK4R3E06PL,S1X is available at Aetrix Electronics and suitable for high-efficiency DC-DC converters, switching voltage regulators, and motor drivers requiring stable component supply and long-term industrial lifecycle support.

Supply support for TK4R3E06PL,S1X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with global distribution and automotive-grade reliability validation.

The TK4R3E06PL,S1X belongs to Toshiba's U-MOS-H series of high-performance N-channel MOSFETs engineered for high-efficiency power conversion in industrial, computing, and motor control applications.

FAQ

What is the maximum continuous drain current rating for TK4R3E06PL,S1X?

The TK4R3E06PL,S1X has a maximum continuous drain current (I_D) rating of 80 A at case temperature T_c = 25 °C. This rating assumes proper heatsinking and derating per the R_th(ch-c) = 1.72 °C/W specification. At higher case temperatures, current must be reduced linearly to maintain channel temperature ≤175 °C, as defined in the Absolute Maximum Ratings table.

Does TK4R3E06PL,S1X support logic-level gate drive?

Yes, TK4R3E06PL,S1X is an enhancement-mode MOSFET with a gate threshold voltage (V_th) of 1.5–2.5 V, allowing direct drive from 3.3 V or 5 V microcontrollers and PWM controllers. However, full R_DS(ON) performance (3.3 mΩ) requires V_GS = 10 V, so a level-shifting gate driver is recommended for high-efficiency operation.

What is the avalanche energy rating of TK4R3E06PL,S1X?

The TK4R3E06PL,S1X is rated for single-pulse avalanche energy (E_AS) of 29 mJ under specified test conditions (V_DD ≈ 48 V, T_ch = 25 °C, L = 3.5 µH, I_AS = 80 A). This rating is guaranteed and enables reliable operation during inductive turn-off events without external snubbers in properly designed circuits.

Is TK4R3E06PL,S1X RoHS compliant?

Yes, TK4R3E06PL,S1X complies with the EU RoHS Directive. Toshiba confirms RoHS compliance for this part, including restrictions on lead, mercury, cadmium, hexavalent chromium, PBB, and PBDE. Full compliance documentation and material declarations are available upon request from Toshiba or authorized distributors.

What is the thermal resistance from channel to case for TK4R3E06PL,S1X?

The channel-to-case thermal resistance (R_th(ch-c)) of TK4R3E06PL,S1X is 1.72 °C/W maximum. This value reflects the internal thermal path from the silicon die to the TO-220 metal tab, and is critical for calculating junction temperature rise when mounted to a heatsink with known interface resistance and ambient conditions.

TK4R3E06PL,S1X Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSIX-H

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.2mOhm @ 15A, 4.5V

Vgs(th) (Max) @ Id:: 2.5V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:: 48.2 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3280 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 87W (Tc)

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

TK4R3E06PL,S1X FAQ

1.How can I place an order for TK4R3E06PL,S1X through Aetrix?

Please submit a Request for Quotation (RFQ) for TK4R3E06PL,S1X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK4R3E06PL,S1X reliable?

The price and inventory of TK4R3E06PL,S1X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK4R3E06PL,S1X is usually 5 days.

3.What payment methods are accepted for TK4R3E06PL,S1X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK4R3E06PL,S1X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK4R3E06PL,S1X?

TK4R3E06PL,S1X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK4R3E06PL,S1X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK4R3E06PL,S1X?

For technical support, including TK4R3E06PL,S1X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK4R3E06PL,S1X requirements.

6.How does Aetrix verify that TK4R3E06PL,S1X is sourced from the original manufacturer or authorized distributors?

All TK4R3E06PL,S1X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK4R3E06PL,S1X meets industry standards.

7.What is the process for return or replacement of TK4R3E06PL,S1X?

All TK4R3E06PL,S1X units undergo pre-shipment inspection (PSI). If there is an issue with TK4R3E06PL,S1X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK4R3E06PL,S1X part is unused and in its original packaging.

Return procedure for TK4R3E06PL,S1X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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