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Toshiba Semiconductor and Storage TK55S10N1,LXHQ
- Part No.:
- TK55S10N1,LXHQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
TK55S10N1,LXHQ.pdf
- Description:
- MOSFET N-CH 100V 55A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,842
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Product details
Overview
TK55S10N1,LXHQ from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel U-MOSⅧ-H power MOSFET designed for high-current switching in automotive and industrial systems. It delivers 55 A DC drain current, 100 V drain-source breakdown voltage, and ultra-low 5.5 mΩ (typ.) RDS(ON) at VGS = 10 V, enabling efficient operation in motor drivers and switching voltage regulators.
For engineers reviewing the TK55S10N1,LXHQ datasheet, TK55S10N1,LXHQ pinout, TK55S10N1,LXHQ application, or TK55S10N1,LXHQ equivalent, key selection criteria include AEC-Q101 qualification, thermal resistance of 0.95 °C/W (ch-to-case), single-pulse avalanche energy rating of 93 mJ, and DPAK+ package compatibility with high-power PCB layouts.
Technical Context
This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate process to achieve low conduction loss and fast switching performance. Its enhancement-mode gate threshold (2.0–4.0 V) ensures reliable turn-on with standard logic-level drivers, while its 3280 pF input capacitance and 14 nC gate-drain charge support robust PWM control in high-frequency DC-DC converters.
The device integrates an intrinsic body diode with 75 ns reverse recovery time and 73 nC reverse recovery charge, enabling synchronous rectification and freewheeling in half-bridge topologies. Its 175 °C maximum channel temperature and AEC-Q101 qualification confirm suitability for under-hood automotive environments where thermal stress and reliability are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - supports 48 V and 60 V bus systems with margin against transients |
| RDS(ON) (typ.) | 5.5 mΩ at VGS = 10 V - reduces conduction loss to <0.3 W at 25 A, easing thermal design |
| ID (DC) | 55 A - enables high-power motor drive stages without paralleling devices |
| EAS | 93 mJ - withstands inductive switching surges in automotive solenoid and pump circuits |
| Rth(ch-c) | 0.95 °C/W - allows >150 W continuous dissipation with moderate heatsinking |
| Qg | 49 nC - determines gate driver power requirement and switching speed trade-off |
| Vth | 2.0–4.0 V - compatible with 3.3 V and 5 V microcontroller outputs without level-shifting |
Pinout & Package
TK55S10N1,LXHQ is housed in a surface-mount DPAK+ (TOSHIBA 2-7M1A) package with exposed drain pad for thermal and electrical connection to PCB copper. The package weighs 0.36 g and features gull-wing leads optimized for automated assembly and high-current routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Controls channel conduction; requires <±1 µA leakage and 10 V drive for full enhancement |
| 2 | Drain (heatsink) | Main high-side current path and primary thermal interface to PCB ground plane |
| 3 | Source | Reference node for gate drive and current sensing; connects to low-side return path |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive powertrain and chassis applications per stress test requirements |
| Low RDS(ON) | 5.5 mΩ typ. minimizes I²R losses in 48 V EV auxiliary systems and EPS controllers |
| High avalanche capability | 93 mJ single-pulse rating protects against inductive kickback in motor commutation |
| Enhancement-mode Vth | 2.0–4.0 V range ensures predictable turn-on with common MCU GPIOs and gate drivers |
| Body diode with low Qrr | 73 nC reverse recovery charge reduces switching loss and EMI in synchronous buck converters |
Applications
| Automotive EPS | 48 V DC-DC Converter |
|---|---|
Use Scenario: Electric power steering motor phase-leg switching in passenger vehicles. IC Role / Device Role / Timing Role: High-side N-channel MOSFET in three-phase inverter bridge, switching at 20–50 kHz. Use Value: AEC-Q101 qualification and 175 °C Tch rating ensure reliability under hood; low RDS(ON) cuts heat generation during sustained assist torque. | Use Scenario: Primary-side switch in isolated 48 V-to-12 V bidirectional DC-DC converter for vehicle networks. IC Role / Device Role / Timing Role: Main power switch in active-clamp forward or phase-shifted full-bridge topology. Use Value: 100 V VDSS provides margin over 48 V nominal bus; 49 nC Qg enables efficient ZVS operation at 100–200 kHz. |
| Industrial Motor Drive | Switching Voltage Regulator |
Use Scenario: Half-bridge output stage for 1–3 kW BLDC drives in HVAC blowers and pumps. IC Role / Device Role / Timing Role: Low-side switching element in H-bridge, operating with 100 ns dead-time control. Use Value: 165 A pulsed current rating handles startup surge; 0.95 °C/W Rth(ch-c) simplifies heatsink sizing for compact enclosures. | Use Scenario: High-efficiency step-down regulator for FPGA core voltage in telecom baseband units. IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter, driven by dedicated gate controller. Use Value: Body diode trr = 75 ns and Qrr = 73 nC reduce cross-conduction loss and improve light-load efficiency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7 | 60 V VDSS, 2.2 mΩ RDS(ON), PowerFLAT 5x6 package, non-AEC-Q101 | Limited to ≤48 V systems; lacks automotive qualification | Select when lower RDS(ON) is prioritized over voltage rating and automotive compliance |
| IRF1407PBF | 75 V VDSS, 7.5 mΩ RDS(ON), TO-220AB package, non-AEC-Q101 | Higher on-resistance and through-hole mounting; no automotive validation | Choose for cost-sensitive industrial supplies where AEC-Q101 is not required |
Compared with STL220N6F7 and IRF1407PBF, TK55S10N1,LXHQ uniquely combines 100 V rating, AEC-Q101 qualification, and DPAK+ thermal performance-making it the only option validated for under-hood 48 V automotive switching where voltage margin and reliability are non-negotiable.
Availability
TK55S10N1,LXHQ is available at Aetrix Electronics and suitable for automotive electronic power steering, 48 V DC-DC conversion, and industrial motor drive applications requiring stable component supply across multi-year production cycles.
Supply support for TK55S10N1,LXHQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on automotive, industrial, and consumer applications.
The TK55S10N1,LXHQ belongs to Toshiba's U-MOSⅧ-H power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive 48 V systems and industrial motor controls.
FAQ
What is the gate threshold voltage range for TK55S10N1,LXHQ?
The TK55S10N1,LXHQ has a gate threshold voltage (Vth) range of 2.0 V to 4.0 V, measured at VDS = 10 V and ID = 0.5 mA. This ensures reliable turn-on with standard 3.3 V and 5 V logic-level drivers, and the TK55S10N1,LXHQ maintains stable switching behavior across temperature and manufacturing variation within this specification.
Is TK55S10N1,LXHQ qualified for automotive use?
Yes, TK55S10N1,LXHQ is AEC-Q101 qualified, confirming its suitability for automotive applications including electric power steering, engine control modules, and 48 V mild-hybrid systems. The TK55S10N1,LXHQ underwent stress testing per AEC-Q101 requirements, including temperature cycling, humidity bias, and high-temperature gate bias, with full qualification documented in Toshiba's reliability reports.
What package type does TK55S10N1,LXHQ use?
TK55S10N1,LXHQ uses the DPAK+ package (TOSHIBA designation: 2-7M1A), a surface-mount variant with an exposed drain pad for enhanced thermal and electrical performance. The TK55S10N1,LXHQ package features gull-wing leads, weighs 0.36 g (typ.), and is optimized for high-current PCB layouts and automated reflow assembly.
What is the maximum continuous drain current for TK55S10N1,LXHQ?
The TK55S10N1,LXHQ supports a maximum DC drain current (ID) of 55 A at Tc = 25 °C. This rating assumes proper heatsinking via the drain pad; actual usable current depends on PCB copper area, ambient temperature, and airflow. The TK55S10N1,LXHQ also supports 165 A pulsed drain current for short-duration events like motor startup.
Does TK55S10N1,LXHQ have an integrated body diode?
Yes, TK55S10N1,LXHQ includes an intrinsic body diode with reverse recovery time (trr) of 75 ns and reverse recovery charge (Qrr) of 73 nC at rated conditions. This diode enables freewheeling and synchronous rectification functions in bridge configurations, and the TK55S10N1,LXHQ's low Qrr helps minimize switching loss and EMI in high-frequency converters.
TK55S10N1,LXHQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- U-MOSVIII-H
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 55A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 6.5mOhm @ 27.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs:
- 49 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3280 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 157W (Tc)
- Operating Temperature:
- 175°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK+
TK55S10N1,LXHQ FAQ
1.How can I place an order for TK55S10N1,LXHQ through Aetrix?
Please submit a Request for Quotation (RFQ) for TK55S10N1,LXHQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK55S10N1,LXHQ reliable?
The price and inventory of TK55S10N1,LXHQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK55S10N1,LXHQ is usually 5 days.
3.What payment methods are accepted for TK55S10N1,LXHQ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK55S10N1,LXHQ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK55S10N1,LXHQ?
TK55S10N1,LXHQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK55S10N1,LXHQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK55S10N1,LXHQ?
For technical support, including TK55S10N1,LXHQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK55S10N1,LXHQ requirements.
6.How does Aetrix verify that TK55S10N1,LXHQ is sourced from the original manufacturer or authorized distributors?
All TK55S10N1,LXHQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK55S10N1,LXHQ meets industry standards.
7.What is the process for return or replacement of TK55S10N1,LXHQ?
All TK55S10N1,LXHQ units undergo pre-shipment inspection (PSI). If there is an issue with TK55S10N1,LXHQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK55S10N1,LXHQ part is unused and in its original packaging.
Return procedure for TK55S10N1,LXHQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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