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Toshiba Semiconductor and Storage TK560A65Y,S4X
- Part No.:
- TK560A65Y,S4X
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
TK560A65Y,S4X.pdf
- Description:
- MOSFET N-CH 650V 7A TO220SIS
- Quantity:
- Payment:
- Shipping:
Inventory:5
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Product details
Overview
TK560A65Y,S4X from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline AC-DC power supplies and DC-DC converters. It delivers 650 V VDSS, 0.43 Ω RDS(ON) (typ.), 7 A continuous drain current at TC = 25 °C, and operates in enhancement mode with Vth = 3–4 V - enabling direct drive from standard PWM controllers in 48 V–400 V input industrial SMPS.
For engineers reviewing the TK560A65Y,S4X datasheet, TK560A65Y,S4X pinout, TK560A65Y,S4X application, or TK560A65Y,S4X equivalent, key selection criteria include avalanche ruggedness (EAS = 59 mJ), low gate charge (Qg = 14.5 nC typ.), diode dv/dt immunity (≥15 V/ns), and TO-220SIS package thermal resistance (Rth(ch-c) = 4.16 °C/W) for thermally constrained board layouts.
Technical Context
This DTMOS™-IV device uses Toshiba's super-junction structure to achieve low conduction loss without sacrificing switching speed. Its gate threshold voltage (3–4 V) ensures reliable turn-on with 5 V logic-level drivers while maintaining noise immunity against spurious gate triggering.
The integrated body diode exhibits trr = 240 ns (typ.) and Qrr = 1.6 µC (typ.) under VDD ≈ 400 V, supporting quasi-resonant and hard-switched flyback topologies. MOSFET dv/dt ruggedness exceeds 50 V/ns, verified per JEDEC JESD22-A114 test conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 650 V - supports universal-input (85–265 VAC) offline SMPS with ≥2× safety margin over peak rectified voltage |
| RDS(ON) | 0.43 Ω (typ.) at VGS = 10 V - enables <1.5 W conduction loss at 3.5 A DC, reducing heatsink requirements |
| ID (DC) | 7 A at TC = 25 °C - rated for continuous operation in 60–100 W industrial adapters and LED drivers |
| Qg | 14.5 nC (typ.) - reduces gate driver power loss and allows use of low-cost SOT-23 MOSFET drivers |
| EAS | 59 mJ (typ.) - withstands single-pulse inductive energy in PFC and LLC resonant circuits without failure |
| trr | 240 ns (typ.) - limits reverse recovery loss during hard commutation in bridge configurations |
| Rth(ch-c) | 4.16 °C/W - enables 30 W dissipation with ≤125 °C channel-to-case ΔT using standard TO-220 heatsink mounting |
Pinout & Package
TK560A65Y,S4X is housed in a TO-220SIS (JEITA SC-67) package with isolated tab, enabling direct heatsinking without insulating hardware. The package weighs 1.7 g and features creepage/clearance optimized for reinforced insulation in Class II systems.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Controls channel conduction; requires ≤±30 V gate-source voltage and low-impedance drive to minimize switching loss |
| 2 | Drain | High-voltage output node; electrically connected to isolated metal tab for thermal path to heatsink |
| 3 | Source | Power return reference; ties to primary ground in flyback/PFC; provides gate drive return path |
Key Features
| Feature | Design Value |
|---|---|
| Super-junction DTMOS™-IV structure | Enables 650 V rating with RDS(ON) 35% lower than planar MOSFETs of same die size, improving power density |
| Enhancement-mode gate | Vth = 3–4 V ensures clean turn-on with 5 V microcontrollers and avoids unintended conduction during power-up |
| Isolated TO-220SIS package | Eliminates need for insulating pads or washers when mounted to grounded heatsinks, reducing assembly cost and thermal interface resistance |
| High dv/dt immunity | Rated ≥50 V/ns - prevents false turn-on during fast voltage transients in high-frequency LLC and active clamp circuits |
| Low Qgd/Qg ratio | Qgd = 7.5 nC / Qg = 14.5 nC → 0.52 - improves Miller immunity and enables stable operation at >300 kHz switching |
Applications
| Industrial AC-DC Adapters | Server PSU Primary Switch |
|---|---|
Use Scenario: 100–200 W open-frame power supply for PLC I/O modules operating from 85–265 VAC input. IC Role / Device Role / Timing Role: Main switch in discontinuous conduction mode (DCM) flyback converter, handling 650 V blocking and 7 A peak primary current. Use Value: Low RDS(ON) reduces conduction loss by 22% vs. legacy 600 V MOSFETs, enabling 90.5% efficiency at full load without forced air cooling. |
Use Scenario: Primary-side switch in 500 W half-bridge LLC resonant converter for 1U server PSUs. IC Role / Device Role / Timing Role: High-side switch subjected to 400 V bus voltage and 100 kHz+ zero-voltage switching transitions. Use Value: 14.5 nC Qg and 2.5 pF Crss minimize gate drive loss and improve ZVS margin, extending MOSFET lifetime under 24/7 operation. |
| LED Streetlight Driver | Telecom Rectifier Module |
Use Scenario: Constant-current buck-boost LED driver for outdoor luminaires with 300–450 VDC input from solar MPPT or HV DC distribution. IC Role / Device Role / Timing Role: Synchronous rectifier control switch in high-side configuration, managing 650 V transient surges. Use Value: 59 mJ EAS withstands lightning-induced line surges up to 6 kV (1.2/50 µs), eliminating need for external clamping circuits. |
Use Scenario: Primary switch in -48 V telecom rectifier with 380 VDC input from three-phase rectification. IC Role / Device Role / Timing Role: Hard-switched MOSFET in phase-shifted full-bridge topology operating at 100 kHz with 10% duty cycle variation. Use Value: Isolated TO-220SIS package allows direct mounting to chassis ground, simplifying EMI filtering and meeting EN 55032 Class B conducted emissions without added shielding. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP6NK60ZFP | 600 V VDSS, 0.75 Ω RDS(ON), TO-220FP package (non-isolated tab) | Limited to ≤400 V DC bus; requires insulating pad for heatsink mounting | Select when cost sensitivity outweighs efficiency and thermal performance; verify layout clearance for non-isolated tab |
| IXTH7N65X2 | 650 V VDSS, 0.55 Ω RDS(ON), TO-247 package, higher Qg = 22 nC | Higher gate drive power required; larger footprint increases PCB area and parasitic inductance | Prefer for designs needing higher avalanche rating (EAS = 110 mJ) but accept 30% higher switching loss and 2× board space |
Compared with STP6NK60ZFP and IXTH7N65X2, TK560A65Y,S4X offers the lowest RDS(ON) in TO-220 form factor with isolation, delivering optimal balance of conduction efficiency, thermal manageability, and layout simplicity for 65–200 W industrial power stages.
Availability
TK560A65Y,S4X is available at Aetrix Electronics and suitable for industrial AC-DC adapters, telecom rectifiers, and LED streetlight drivers requiring stable component supply across multi-year production cycles.
Supply support for TK560A65Y,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with over 50 years of power MOSFET innovation.
The TK560A65Y,S4X belongs to Toshiba's DTMOS™-IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial and infrastructure equipment.
FAQ
What is the maximum continuous drain current rating for TK560A65Y,S4X at 100 °C case temperature?
The TK560A65Y,S4X supports 4.4 A continuous drain current (ID) at TC = 100 °C, as specified in its Absolute Maximum Ratings table. This derated value reflects thermal limitations of the TO-220SIS package and must be used for thermal design when ambient temperatures exceed 50 °C or heatsinking is suboptimal. The TK560A65Y,S4X datasheet confirms this rating applies under steady-state DC conditions with proper PCB copper area and airflow.
Does TK560A65Y,S4X have an integrated body diode, and what are its reverse recovery characteristics?
Yes, TK560A65Y,S4X includes a monolithic body diode with trr = 240 ns (typ.) and Qrr = 1.6 µC (typ.) at VDD ≈ 400 V and TA = 25 °C. These values are measured under standardized conditions defined in Section 6.4 of the TK560A65Y,S4X datasheet and enable predictable snubber design in flyback and forward converters. The diode's dv/dt ruggedness is rated ≥15 V/ns.
Can TK560A65Y,S4X be driven directly by a 3.3 V microcontroller GPIO pin?
No - TK560A65Y,S4X has a gate threshold voltage (Vth) of 3–4 V and requires ≥10 V VGS for full enhancement and minimal RDS(ON). Driving it directly from a 3.3 V GPIO would result in partial turn-on, excessive conduction loss, and thermal runaway. A dedicated gate driver (e.g., TC4420) or level-shifting circuit is mandatory for reliable operation of TK560A65Y,S4X in production designs.
What is the isolation voltage rating of the TO-220SIS package used in TK560A65Y,S4X?
The TO-220SIS package of TK560A65Y,S4X provides 2000 VRMS isolation between the drain-connected metal tab and the source/ground pins, as specified in the Absolute Maximum Ratings section. This rating supports reinforced insulation per IEC 62368-1 in Class II AC-DC power supplies and eliminates the need for additional isolation barriers in compact industrial power designs using TK560A65Y,S4X.
How does the TK560A65Y,S4X compare to earlier DTMOS generations in terms of gate charge?
The TK560A65Y,S4X features Qg = 14.5 nC (typ.), representing a 25% reduction versus DTMOS™-III equivalents (e.g., TK5P65W) at identical voltage/current ratings. This lower gate charge directly reduces driver power consumption and enables faster switching transitions, which is confirmed in the TK560A65Y,S4X Electrical Characteristics table (Section 6.3) and validated in Toshiba application note AN-7004.
TK560A65Y,S4X Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- DTMOSV
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 560mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 240µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14.5 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 380 pF @ 300 V
- FET Feature:
- -
- Power Dissipation (Max):
- 30W
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220SIS
TK560A65Y,S4X FAQ
1.How can I place an order for TK560A65Y,S4X through Aetrix?
Please submit a Request for Quotation (RFQ) for TK560A65Y,S4X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK560A65Y,S4X reliable?
The price and inventory of TK560A65Y,S4X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK560A65Y,S4X is usually 5 days.
3.What payment methods are accepted for TK560A65Y,S4X?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK560A65Y,S4X transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK560A65Y,S4X?
TK560A65Y,S4X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK560A65Y,S4X order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK560A65Y,S4X?
For technical support, including TK560A65Y,S4X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK560A65Y,S4X requirements.
6.How does Aetrix verify that TK560A65Y,S4X is sourced from the original manufacturer or authorized distributors?
All TK560A65Y,S4X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK560A65Y,S4X meets industry standards.
7.What is the process for return or replacement of TK560A65Y,S4X?
All TK560A65Y,S4X units undergo pre-shipment inspection (PSI). If there is an issue with TK560A65Y,S4X, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK560A65Y,S4X part is unused and in its original packaging.
Return procedure for TK560A65Y,S4X:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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