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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK560P60Y,RQ

Name: TK560P60Y,RQ
Brand: Toshiba Semiconductor and Storage
SKU: TK560P60Y,RQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK560P60Y,RQ

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: TK560P60Y,RQ.pdf

Description:: MOSFET N-CHANNEL 600V 7A DPAK

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Product details

Overview

TK560P60Y,RQ from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline power supplies. It delivers 600 V drain-source breakdown voltage, 0.43 Ω typical R_DS(ON) at V_GS = 10 V and I_D = 3.5 A, 7 A DC drain current (T_c = 25 °C), and operates with 3–4 V gate threshold voltage - enabling direct drive from standard PWM controllers in AC-DC adapters and industrial SMPS.

For engineers reviewing the TK560P60Y,RQ datasheet, TK560P60Y,RQ pinout, TK560P60Y,RQ application, or TK560P60Y,RQ equivalent, key selection criteria include avalanche ruggedness (64 mJ), low gate charge (14.5 nC typ.), DPAK package thermal performance (R_th(ch-c) = 2.08 °C/W), and diode reverse recovery characteristics (t_rr = 240 ns, Q_rr = 1.6 µC) critical for ZVS and quasi-resonant topologies.

Technical Context

This device implements Toshiba's DTMOS™ IV super-junction architecture to achieve low conduction loss without sacrificing switching speed. Its optimized cell structure enables stable R_DS(ON) over temperature and reduced C_oss (18 pF typ.) for improved hard-switching efficiency.

The MOSFET features enhancement-mode operation with tightly controlled V_th (3–4 V), low gate leakage (<1 µA), and robust dv/dt immunity (≥50 V/ns). Its integrated body diode supports continuous conduction mode (CCM) flyback and LLC resonant converters where synchronous rectification is not used.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Supports universal-input (85–265 VAC) offline SMPS with ≥2× safety margin against line transients.
R_DS(ON) (typ.)	0.43 Ω @ V_GS = 10 V, I_D = 3.5 A - Enables <1.5 W conduction loss at 3.5 A, reducing heatsink requirements in compact adapters.
Q_g (typ.)	14.5 nC - Allows fast turn-on with moderate gate driver strength (e.g., 1-A peak), minimizing switching loss in 65–100 kHz designs.
E_AS	64 mJ - Withstands single-pulse inductive energy in PFC and flyback snubber circuits without failure.
t_rr	240 ns - Limits diode reverse recovery loss and EMI generation in discontinuous conduction mode (DCM) flyback converters.
R_th(ch-c)	2.08 °C/W - Enables 60 W power dissipation with ≤125 °C case-to-channel delta, supporting thermally constrained DPAK layouts.

Pinout & Package

TK560P60Y,RQ is housed in a surface-mount DPAK (TOSHIBA 2-7K1S) package with gull-wing leads and exposed drain pad for thermal conduction. The package weighs 0.36 g and is RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives PWM signal; requires <1 µA leakage current and 3–4 V threshold to ensure clean turn-on at logic-level drivers.
2 (Drain)	High-side switch node	Connected to primary winding or bus rail; rated for 600 V and handles avalanche energy during switching transitions.
3 (Source)	Power return / reference	Serves as local ground for gate drive; ties to PCB ground plane and carries full load current (7 A DC).

Key Features

Feature	Design Value
Super-junction DTMOS™ IV structure	Delivers 0.43 Ω R_DS(ON) at 600 V - 35% lower on-resistance than planar MOSFETs of same die size, improving full-load efficiency.
Low Q_gd/Q_g ratio	7.5 nC / 14.5 nC = 0.52 - Reduces Miller plateau time, enabling stable high-speed switching with minimal risk of shoot-through.
Guaranteed avalanche capability	64 mJ single-pulse rating - Eliminates need for external clamping in cost-sensitive flyback and forward converter designs.
Enhancement-mode V_th	3–4 V range - Ensures reliable turn-off at 0 V gate bias and compatibility with 5 V or 3.3 V microcontroller outputs.

Applications

AC-DC Adapters	Industrial SMPS
Use Scenario: 36 W universal-input adapter for consumer electronics with 65 kHz flyback topology. IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer; operates in DCM with self-driven reset. Use Value: Low R_DS(ON) reduces conduction loss at light-to-mid loads; 240 ns t_rr minimizes diode-related switching loss and audible noise.	Use Scenario: 200 W open-frame power supply for factory automation PLCs using active-clamp forward converter. IC Role / Device Role / Timing Role: Main power switch handling 400 V bus; synchronized with clamp FET for zero-voltage switching. Use Value: 64 mJ E_AS absorbs clamp circuit energy spikes; 2.08 °C/W R_th(ch-c) sustains 7 A DC under forced-air cooling.
PFC Boost Converters	LED Driver Power Stages
Use Scenario: 150 W two-stage LED driver with continuous-conduction-mode (CCM) boost PFC front-end. IC Role / Device Role / Timing Role: High-side switch in boost stage; commutated at 65 kHz with duty cycle modulation. Use Value: Low Q_g (14.5 nC) enables efficient gate driving with integrated PFC controller; 600 V rating covers 400 V DC bus + 100 V margin.	Use Scenario: Outdoor streetlight driver operating in harsh ambient (−40 to +85 °C) with passive cooling. IC Role / Device Role / Timing Role: Primary switch in quasi-resonant flyback delivering constant-current output. Use Value: Stable R_DS(ON) over temperature ensures consistent efficiency across operating range; DPAK footprint simplifies thermal pad layout.

AC-DC Adapters

Industrial SMPS

Use Scenario: 36 W universal-input adapter for consumer electronics with 65 kHz flyback topology.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer; operates in DCM with self-driven reset.

Use Value: Low R_DS(ON) reduces conduction loss at light-to-mid loads; 240 ns t_rr minimizes diode-related switching loss and audible noise.

Use Scenario: 200 W open-frame power supply for factory automation PLCs using active-clamp forward converter.

IC Role / Device Role / Timing Role: Main power switch handling 400 V bus; synchronized with clamp FET for zero-voltage switching.

Use Value: 64 mJ E_AS absorbs clamp circuit energy spikes; 2.08 °C/W R_th(ch-c) sustains 7 A DC under forced-air cooling.

PFC Boost Converters

LED Driver Power Stages

Use Scenario: 150 W two-stage LED driver with continuous-conduction-mode (CCM) boost PFC front-end.

IC Role / Device Role / Timing Role: High-side switch in boost stage; commutated at 65 kHz with duty cycle modulation.

Use Value: Low Q_g (14.5 nC) enables efficient gate driving with integrated PFC controller; 600 V rating covers 400 V DC bus + 100 V margin.

Use Scenario: Outdoor streetlight driver operating in harsh ambient (−40 to +85 °C) with passive cooling.

IC Role / Device Role / Timing Role: Primary switch in quasi-resonant flyback delivering constant-current output.

Use Value: Stable R_DS(ON) over temperature ensures consistent efficiency across operating range; DPAK footprint simplifies thermal pad layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V, 6 A, R_DS(ON) = 0.75 Ω (typ.), TO-220FP package, higher R_DS(ON) and larger footprint.	Requires larger heatsink and PCB area; less suitable for space-constrained adapters.	Choose when legacy TO-220FP layout exists and lower cost outweighs efficiency loss.
IPP60R099C7	600 V, 12 A, R_DS(ON) = 0.099 Ω (typ.), TO-220 package, 3× lower R_DS(ON) but higher Q_g (44 nC).	Better conduction loss but demands stronger gate driver; unsuitable for low-power adapters due to over-spec.	Prefer for >300 W industrial PSUs where conduction loss dominates and gate drive capability is available.

Compared with STP6NK60ZFP and IPP60R099C7, TK560P60Y,RQ offers optimal balance of R_DS(ON), Q_g, and DPAK thermal performance for 36–200 W offline converters - delivering higher efficiency than STP6NK60ZFP without requiring upgraded gate drivers like IPP60R099C7.

Availability

TK560P60Y,RQ is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS, and LED driver power stages requiring stable component supply, long-term lifecycle support, and RoHS-compliant DPAK packaging.

Supply support for TK560P60Y,RQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with global manufacturing and quality certification (ISO/TS 16949, ISO 14001).

TK560P60Y,RQ belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in consumer, industrial, and lighting applications.

FAQ

What is the maximum continuous drain current rating for TK560P60Y,RQ at T_c = 100 °C?

The TK560P60Y,RQ supports 4.4 A DC drain current when case temperature is maintained at 100 °C. This derating reflects thermal limits of the DPAK package and ensures channel temperature remains ≤150 °C. Designers must verify heatsinking and airflow to sustain this current in real-world conditions. The TK560P60Y,RQ datasheet specifies this value in Absolute Maximum Ratings Table 4 under "Drain current (DC) (T_c = 100 °C)".

Does TK560P60Y,RQ have an integrated body diode, and what are its key recovery parameters?

Yes, TK560P60Y,RQ includes a monolithic body diode with reverse recovery time (t_rr) of 240 ns (typ.) and reverse recovery charge (Q_rr) of 1.6 µC (typ.) at I_DR = 3 A and −dI_DR/dt = 100 A/µs. These values are measured per Section 6.4 of the TK560P60Y,RQ datasheet and enable predictable performance in DCM flyback and resonant converters where the diode conducts during dead time.

What is the guaranteed single-pulse avalanche energy rating for TK560P60Y,RQ?

The TK560P60Y,RQ is rated for 64 mJ of single-pulse avalanche energy (E_AS) under test conditions of V_DD = 90 V, T_ch = 25 °C (initial), L = 34.8 mH, and R_G = 25 Ω. This specification is guaranteed per the TK560P60Y,RQ datasheet Absolute Maximum Ratings table and supports robust operation in inductive switching applications without external snubbers.

Is TK560P60Y,RQ suitable for use in automotive applications?

No, TK560P60Y,RQ is not qualified for automotive applications. Toshiba explicitly restricts its use in equipment requiring extraordinarily high reliability - including automobiles - per the "RESTRICTIONS ON PRODUCT USE" section of the TK560P60Y,RQ datasheet. It is intended for industrial, consumer, and lighting power supplies only.

What is the gate-source voltage limit for TK560P60Y,RQ, and why is it important?

The TK560P60Y,RQ has a maximum gate-source voltage (V_GSS) rating of ±30 V. Exceeding this limit risks permanent oxide damage to the gate structure. This specification is critical during gate driver design and transient protection - especially in high-noise environments where ringing or coupling could induce overshoot. The TK560P60Y,RQ datasheet lists this in Absolute Maximum Ratings Table 4.

TK560P60Y,RQ Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSV

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 560mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 240µA

Gate Charge (Qg) (Max) @ Vgs:: 14.5 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 380 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

TK560P60Y,RQ FAQ

1.How can I place an order for TK560P60Y,RQ through Aetrix?

Please submit a Request for Quotation (RFQ) for TK560P60Y,RQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK560P60Y,RQ reliable?

The price and inventory of TK560P60Y,RQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK560P60Y,RQ is usually 5 days.

3.What payment methods are accepted for TK560P60Y,RQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK560P60Y,RQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK560P60Y,RQ?

TK560P60Y,RQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK560P60Y,RQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK560P60Y,RQ?

For technical support, including TK560P60Y,RQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK560P60Y,RQ requirements.

6.How does Aetrix verify that TK560P60Y,RQ is sourced from the original manufacturer or authorized distributors?

All TK560P60Y,RQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK560P60Y,RQ meets industry standards.

7.What is the process for return or replacement of TK560P60Y,RQ?

All TK560P60Y,RQ units undergo pre-shipment inspection (PSI). If there is an issue with TK560P60Y,RQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK560P60Y,RQ part is unused and in its original packaging.

Return procedure for TK560P60Y,RQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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