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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK560P65Y,RQ

Name: TK560P65Y,RQ
Brand: Toshiba Semiconductor and Storage
SKU: TK560P65Y,RQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK560P65Y,RQ

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: TK560P65Y,RQ.pdf

Description:: MOSFET N-CHANNEL 650V 7A DPAK

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Product details

Overview

TK560P65Y from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET using DTMOS™ Super Junction technology, designed for high-voltage switching in offline AC-DC converters and PFC stages. It delivers 650 V V_DSS, 0.43 Ω R_DS(ON) (typ.), and 7 A continuous drain current at T_C = 25 °C, enabling efficient operation in compact 65 W–150 W industrial power supplies.

For engineers reviewing the TK560P65Y datasheet, TK560P65Y pinout, TK560P65Y application, or TK560P65Y equivalent, key selection criteria include its 650 V blocking capability, low gate charge (Q_g = 14.5 nC typ.), avalanche ruggedness (E_AS = 59 mJ), and DPAK package thermal performance (R_th(ch-c) = 2.08 °C/W) - all critical for reliable high-frequency hard-switching designs.

Technical Context

This MOSFET employs Toshiba's DTMOS™ IV process with a super junction structure to achieve high breakdown voltage and low on-resistance simultaneously. Its enhancement-mode gate threshold (V_th = 3–4 V) ensures compatibility with standard 10 V gate drivers, while low Crss (2.5 pF typ.) supports stable dv/dt immunity up to 50 V/ns.

The device integrates a fast-recovery body diode (t_rr = 240 ns typ., Q_rr = 1.6 µC) and exhibits robust single-pulse avalanche capability (I_AS = 1.8 A, E_AS = 59 mJ), making it suitable for clamp-based topologies and discontinuous conduction mode (DCM) flyback converters where diode recovery stress is significant.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Supports universal-input offline SMPS without derating in 230 VAC mains applications.
R_DS(ON)	0.43 Ω (typ.) at V_GS = 10 V - Enables <1.5 W conduction loss at 3.5 A DC, reducing heatsink requirements.
Q_g	14.5 nC (typ.) - Low total gate charge minimizes driver power and enables >100 kHz switching with standard gate drivers.
E_AS	59 mJ (typ.) - Withstands repetitive avalanche events in clamp circuits and transformer leakage energy absorption.
t_rr	240 ns (typ.) - Fast body diode recovery reduces switching losses and EMI in quasi-resonant and DCM topologies.
R_th(ch-c)	2.08 °C/W - Enables 60 W power dissipation with ≤125 °C case temperature rise, supporting compact DPAK mounting.

Pinout & Package

TK560P65Y is housed in a surface-mount DPAK (TOSHIBA package code 2-7K1S) with exposed drain pad for thermal and electrical performance. The package weighs 0.36 g and features gull-wing leads compatible with standard reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
1: Gate	Control electrode	Receives 10 V logic-level drive; low input capacitance (C_iss = 380 pF) eases driver selection.
2: Drain	Main high-side current path	Connected to PCB copper pour for thermal conduction; electrically tied to exposed pad.
3: Source	Reference node for gate drive and current sensing	Serves as return path for load current and gate drive loop; requires low-inductance layout.

Key Features

Feature	Design Value
DTMOS™ Super Junction Structure	Enables 650 V rating with R_DS(ON) 30% lower than planar MOSFETs of same die size, improving power density.
Low Crss / High dv/dt Immunity	Crss = 2.5 pF (typ.) limits Miller-induced turn-on risk, supporting reliable operation at 50 V/ns.
Enhancement-Mode Threshold	V_th = 3–4 V ensures clean turn-on with 5 V or 10 V controllers and avoids unintended conduction during startup.
Integrated Body Diode Performance	V_DSF = −1.7 V (max), t_rr = 240 ns - Reduces dead-time losses and snubber complexity in half-bridge PFC.

Applications

Industrial AC-DC Adapters	Server PSU Primary Switch
Use Scenario: 100–150 W open-frame power supply for factory automation I/O modules operating across 85–264 VAC input. IC Role / Device Role / Timing Role: Primary-side switching transistor in continuous conduction mode (CCM) LLC resonant converter, switching at 200–300 kHz. Use Value: Low R_DS(ON) and Q_g reduce conduction and switching losses, enabling >92% efficiency at full load without forced air cooling.	Use Scenario: High-efficiency front-end rectification and isolation in redundant 1U server PSUs with active PFC + LLC topology. IC Role / Device Role / Timing Role: Boost switch in interleaved active PFC stage, handling 10 A peak inductor current at 65–100 kHz. Use Value: Avalanche ruggedness (E_AS = 59 mJ) absorbs PFC inductor energy during overvoltage transients, eliminating need for external clamps.
LED Driver Power Stage	Telecom Rectifier Module
Use Scenario: Constant-current isolated LED driver for outdoor street lighting (150–200 W), operating in harsh ambient temperatures up to 70 °C. IC Role / Device Role / Timing Role: Main switch in flyback converter with primary-side regulation, operating in DCM at 65 kHz. Use Value: Fast body diode (t_rr = 240 ns) minimizes reverse recovery losses and associated EMI, simplifying EMI filter design.	Use Scenario: -48 V telecom rectifier module with dual active-clamp forward topology, requiring high reliability under continuous 24/7 operation. IC Role / Device Role / Timing Role: Synchronous rectifier control switch in secondary-side synchronous rectification circuit. Use Value: Low R_DS(ON) (0.43 Ω) and low C_oss (18 pF) reduce conduction loss and improve light-load efficiency versus Schottky alternatives.

Industrial AC-DC Adapters

Server PSU Primary Switch

Use Scenario: 100–150 W open-frame power supply for factory automation I/O modules operating across 85–264 VAC input.

IC Role / Device Role / Timing Role: Primary-side switching transistor in continuous conduction mode (CCM) LLC resonant converter, switching at 200–300 kHz.

Use Value: Low R_DS(ON) and Q_g reduce conduction and switching losses, enabling >92% efficiency at full load without forced air cooling.

Use Scenario: High-efficiency front-end rectification and isolation in redundant 1U server PSUs with active PFC + LLC topology.

IC Role / Device Role / Timing Role: Boost switch in interleaved active PFC stage, handling 10 A peak inductor current at 65–100 kHz.

Use Value: Avalanche ruggedness (E_AS = 59 mJ) absorbs PFC inductor energy during overvoltage transients, eliminating need for external clamps.

LED Driver Power Stage

Telecom Rectifier Module

Use Scenario: Constant-current isolated LED driver for outdoor street lighting (150–200 W), operating in harsh ambient temperatures up to 70 °C.

IC Role / Device Role / Timing Role: Main switch in flyback converter with primary-side regulation, operating in DCM at 65 kHz.

Use Value: Fast body diode (t_rr = 240 ns) minimizes reverse recovery losses and associated EMI, simplifying EMI filter design.

Use Scenario: -48 V telecom rectifier module with dual active-clamp forward topology, requiring high reliability under continuous 24/7 operation.

IC Role / Device Role / Timing Role: Synchronous rectifier control switch in secondary-side synchronous rectification circuit.

Use Value: Low R_DS(ON) (0.43 Ω) and low C_oss (18 pF) reduce conduction loss and improve light-load efficiency versus Schottky alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V V_DSS, R_DS(ON) = 0.75 Ω (typ.), higher Q_g = 22 nC	Limited to ≤100 W due to lower voltage rating and higher conduction loss	Acceptable for cost-sensitive 85–132 VAC-only designs where 650 V margin is not required.
IPP65R045C7	650 V V_DSS, R_DS(ON) = 0.045 Ω (typ.), TO-220FP package, higher thermal resistance	Requires larger heatsink; unsuitable for space-constrained DPAK layouts	Preferred when <0.5 Ω R_DS(ON) is mandatory and board area allows through-hole mounting.

Compared with STP6NK60ZFP and IPP65R045C7, TK560P65Y offers optimal balance of 650 V rating, DPAK footprint, and mid-range R_DS(ON)-making it ideal for compact, universal-input industrial power supplies where thermal management and layout density are constrained.

Availability

TK560P65Y is available at Aetrix Electronics and suitable for industrial AC-DC adapters, server PSU primary switches, and LED driver power stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for TK560P65Y includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in high-reliability power MOSFET design.

TK560P65Y belongs to Toshiba's DTMOS™ IV family, engineered specifically for high-efficiency, high-density offline SMPS and PFC applications demanding robust avalanche capability and low gate charge.

FAQ

What is the maximum continuous drain current for TK560P65Y at 100 °C case temperature?

The TK560P65Y supports 4.4 A continuous drain current (I_D) at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derated value reflects thermal limitations of the DPAK package and must be used for thermal design validation when ambient or heatsink conditions elevate case temperature beyond 25 °C. Always verify channel temperature remains ≤150 °C using R_th(ch-c) = 2.08 °C/W.

Does TK560P65Y have avalanche capability, and how is it rated?

Yes, TK560P65Y is fully rated for single-pulse avalanche operation with E_AS = 59 mJ (typ.) and I_AS = 1.8 A under defined test conditions (V_DD = 90 V, L = 32.5 mH, R_G = 25 Ω). This capability allows safe absorption of inductive energy in clamp circuits and transient overvoltage events without failure, provided layout minimizes parasitic inductance in the avalanche current path.

What is the gate threshold voltage range for TK560P65Y, and why does it matter?

The TK560P65Y has a gate threshold voltage (V_th) range of 3–4 V at V_DS = 10 V and I_D = 0.24 mA. This enhancement-mode specification ensures predictable turn-on with standard 5 V or 10 V gate drivers and prevents accidental conduction during power-up or noise spikes. Designers must ensure gate drive voltage exceeds 4 V to guarantee full enhancement across process and temperature variation.

Can TK560P65Y be used in synchronous rectification applications?

While TK560P65Y is optimized as a primary-side switch, its low R_DS(ON) (0.43 Ω) and fast body diode (t_rr = 240 ns) make it viable for secondary-side synchronous rectification in medium-power flyback or forward converters below 100 W. However, dedicated low-V_DS MOSFETs (e.g., 30–60 V rated) typically offer better efficiency in that role due to lower conduction loss at low output voltages.

What is the recommended gate resistor value for TK560P65Y in a 100 kHz PFC boost converter?

For a 100 kHz PFC boost application, a gate resistor of 10–22 Ω is recommended for TK560P65Y to balance switching speed and EMI. The datasheet specifies switching times (t_r = 20 ns, t_f = 8 ns) and gate resistance (r_g = 32 Ω) under test conditions with R_G = 10 Ω - confirming this value provides controlled edge rates while minimizing gate driver losses. Layout parasitics must be minimized to avoid oscillation.

TK560P65Y,RQ Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSV

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 560mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 240µA

Gate Charge (Qg) (Max) @ Vgs:: 14.5 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 380 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

TK560P65Y,RQ FAQ

1.How can I place an order for TK560P65Y,RQ through Aetrix?

Please submit a Request for Quotation (RFQ) for TK560P65Y,RQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK560P65Y,RQ reliable?

The price and inventory of TK560P65Y,RQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK560P65Y,RQ is usually 5 days.

3.What payment methods are accepted for TK560P65Y,RQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK560P65Y,RQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK560P65Y,RQ?

TK560P65Y,RQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK560P65Y,RQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK560P65Y,RQ?

For technical support, including TK560P65Y,RQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK560P65Y,RQ requirements.

6.How does Aetrix verify that TK560P65Y,RQ is sourced from the original manufacturer or authorized distributors?

All TK560P65Y,RQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK560P65Y,RQ meets industry standards.

7.What is the process for return or replacement of TK560P65Y,RQ?

All TK560P65Y,RQ units undergo pre-shipment inspection (PSI). If there is an issue with TK560P65Y,RQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK560P65Y,RQ part is unused and in its original packaging.

Return procedure for TK560P65Y,RQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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