Toshiba Semiconductor and Storage TK56A12N1,S4X

Overview

TK56A12N1,S4X from Toshiba is a silicon N-channel power MOSFET in the U-MOSⅧ-H series, designed for high-current DC-DC conversion and motor drive stages. It delivers 112 A continuous drain current at T_c = 25°C, features 6.2 mΩ typical R_DS(ON) at V_GS = 10 V, and supports 120 V drain-source breakdown voltage - enabling efficient switching in industrial SMPS and UPS inverters.

For engineers reviewing the TK56A12N1,S4X datasheet, TK56A12N1,S4X pinout, TK56A12N1,S4X application, or TK56A12N1,S4X equivalent, key selection criteria include its TO-220SIS package thermal performance (R_th(ch-c) = 2.77°C/W), avalanche ruggedness (E_AS = 110 mJ), and gate charge profile (Q_g = 69 nC) for optimized hard-switching efficiency.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate process to achieve low on-resistance and fast switching with controlled Q_gd/Q_gs ratio. Its enhancement-mode threshold (V_th = 2.0–4.0 V) ensures reliable gate drive compatibility with standard 10 V logic-level controllers.

The integrated body diode exhibits 86 ns reverse recovery time and 210 nC Q_rr under dI_DR/dt = 100 A/µs, supporting synchronous rectification and freewheeling in half-bridge topologies without external Schottky supplementation.

Key Specifications

Pinout & Package

TO-220SIS (JEITA SC-67, Toshiba 2-10U1S) - isolated tab package with internal source-to-case isolation; 1.7 g mass; 15.8 mm × 10.2 mm × 4.5 mm footprint; screw-mount compatible.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Compared with STP110N12F7 and IXTH110N10L2, the TK56A12N1,S4X offers superior thermal density (2.77°C/W), intrinsic isolation, and tighter V_DSS margin - making it optimal for space-constrained, high-reliability industrial power stages where heatsink integration and safety certification matter.

Availability

TK56A12N1,S4X is available at Aetrix Electronics and suitable for industrial switching power supplies, motor drive inverters, and uninterruptible power systems requiring stable component supply across multi-year production cycles.

Supply support for TK56A12N1,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power ICs, and memory solutions with emphasis on energy efficiency and reliability for industrial and automotive markets.

The TK56A12N1,S4X belongs to Toshiba's U-MOSⅧ-H power MOSFET family, engineered specifically for high-efficiency, high-current DC-DC conversion and motor control applications demanding low R_DS(ON), rugged avalanche performance, and thermally optimized packaging.

FAQ

What is the maximum continuous drain current rating for TK56A12N1,S4X?

The TK56A12N1,S4X is rated for 112 A continuous drain current at case temperature T_c = 25°C. This rating assumes proper heatsinking and derates linearly to zero at T_c = 150°C per the Safe Operating Area curve. At T_c = 100°C, the usable I_D drops to approximately 65 A - a critical consideration for sealed enclosure designs.

Does TK56A12N1,S4X have an isolated package, and why does that matter?

Yes, the TK56A12N1,S4X uses the TO-220SIS package with electrically isolated drain tab. This eliminates the need for insulating pads or shoulder washers when mounting directly to grounded heatsinks - reducing thermal resistance by up to 0.5°C/W and simplifying compliance with IPC-2221 creepage/clearance requirements in industrial safety standards.

What is the typical gate threshold voltage range for TK56A12N1,S4X, and how does it affect drive design?

The TK56A12N1,S4X has a gate threshold voltage V_th of 2.0–4.0 V (measured at V_DS = 10 V, I_D = 1.0 mA). This wide range means gate drivers must supply ≥10 V to ensure full enhancement across process variation, and logic-level 5 V microcontrollers require level-shifting to avoid partial turn-on and excessive R_DS(ON).

Can TK56A12N1,S4X be used in avalanche mode, and what is its rated single-pulse energy?

Yes, the TK56A12N1,S4X is fully rated for single-pulse avalanche operation with E_AS = 110 mJ (tested at V_DD = 80 V, I_AR = 56 A, L = 34.4 µH). This specification validates its use in unclamped inductive switching - such as relay driving or transformer reset - without external snubbers, provided peak channel temperature remains ≤150°C.

What is the body diode's reverse recovery performance, and how does it impact synchronous rectification?

The TK56A12N1,S4X body diode has t_rr = 86 ns and Q_rr = 210 nC under dI_DR/dt = 100 A/µs. These values enable efficient synchronous rectification in buck and LLC converters up to 300 kHz, reducing diode conduction loss by 40% compared to discrete Schottky alternatives - though careful gate timing is required to avoid cross-conduction.