Toshiba Semiconductor and Storage TK58A06N1,S4X

Overview

TK58A06N1,S4X from Toshiba is a silicon N-channel power MOSFET in U-MOSⅧ-H process, designed as a high-current, low-R_DS(ON) switching element for DC-DC converters and motor drives. It delivers 105 A DC drain current, 60 V drain-source breakdown voltage, and 4.4 mΩ typical on-resistance at V_GS = 10 V, operating reliably up to 150 °C channel temperature.

For engineers reviewing the TK58A06N1,S4X datasheet, TK58A06N1,S4X pinout, TK58A06N1,S4X application, or TK58A06N1,S4X equivalent, key selection criteria include its TO-220SIS package thermal performance (R_th(ch-c) = 3.57 °C/W), avalanche energy rating (E_AS = 158 mJ), and gate charge profile (Q_g = 46 nC) for hard-switched SMPS designs.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate structure to achieve low conduction loss and fast switching with controlled Q_gd/Q_gs ratio (11/15 nC). Its enhancement-mode threshold (V_th = 2.0–4.0 V) ensures reliable turn-on with standard 10 V gate drivers while maintaining low IDSS (≤10 µA at 60 V).

The device integrates an intrinsic body diode with 63 ns reverse recovery time and 100 nC Q_rr, enabling synchronous rectification in buck converters. Its safe operating area (SOA) is guaranteed up to 269 A pulsed drain current and supports single-pulse avalanche operation under defined conditions (V_DD = 48 V, L = 36.1 µH).

Key Specifications

Pinout & Package

TK58A06N1,S4X is housed in a TO-220SIS (JEITA SC-67 / Toshiba 2-10U1S) package with isolated drain tab, optimized for high-power mounting and thermal management. The package weighs 1.7 g and features internal isolation between drain and mounting surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP110N6F7 and IRF1404ZLPbF, TK58A06N1,S4X provides superior thermal interface via isolated drain, higher avalanche robustness, and tighter V_th tolerance-critical for stable multi-phase current sharing and high-reliability industrial power conversion.

Availability

TK58A06N1,S4X is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom rectifiers, and EV onboard charger DC-DC stages requiring stable component supply and long-term manufacturability.

Supply support for TK58A06N1,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power ICs, and memory solutions, with global manufacturing and quality systems certified to ISO 9001 and IATF 16949.

The TK58A06N1,S4X belongs to Toshiba's U-MOSⅧ-H high-efficiency power MOSFET family, engineered specifically for high-current, high-frequency switching in industrial and communications power supplies where low R_DS(ON) and robust SOA are mandatory.

FAQ

What is the maximum continuous drain current rating for TK58A06N1,S4X?

The TK58A06N1,S4X is rated for 105 A DC drain current at T_c = 25 °C. This rating assumes proper heatsinking to maintain channel temperature ≤150 °C; actual usable current depends on PCB layout, ambient temperature, and thermal interface resistance. The package limit is 100 A, but silicon capability allows 105 A under specified thermal conditions.

Does TK58A06N1,S4X have an isolated drain tab, and why does it matter?

Yes, TK58A06N1,S4X uses the TO-220SIS package with an electrically isolated drain tab. This allows direct mounting to a grounded heatsink without requiring insulating hardware, simplifying thermal design and improving reliability in high-voltage systems like 48 V telecom rectifiers or EV auxiliary supplies where creepage/clearance constraints exist.

What is the gate threshold voltage range for TK58A06N1,S4X, and how does it affect drive requirements?

The TK58A06N1,S4X has a gate threshold voltage (V_th) range of 2.0 to 4.0 V at V_DS = 10 V and I_D = 0.5 mA. This ensures reliable turn-on with standard 10 V gate drivers while preventing accidental conduction from noise or leakage. A minimum 6 V gate drive is recommended for stable operation in noisy industrial environments.

Can TK58A06N1,S4X be used in avalanche mode, and what is its rated energy?

Yes, TK58A06N1,S4X is characterized for single-pulse avalanche operation with E_AS = 158 mJ at T_ch = 25 °C (V_DD = 48 V, L = 36.1 µH, I_AR = 58 A). This rating supports robustness against inductive switching transients in motor drives and unregulated power supplies, but repetitive avalanche is not guaranteed and must be avoided in design.

What is the typical total gate charge (Q_g) of TK58A06N1,S4X, and how does it influence switching frequency?

The TK58A06N1,S4X has a typical total gate charge (Q_g) of 46 nC at V_GS = 10 V and I_D = 58 A. This value directly determines required gate driver current and switching loss; for example, driving at 500 kHz with 12 V gate swing demands ~2.8 W average gate drive power, making it suitable for high-frequency SMPS without excessive driver overhead.