Toshiba Semiconductor and Storage TK58E06N1,S1X

Overview

TK58E06N1,S1X from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in U-MOSⅧ-H process, designed as a high-current, low-R_DS(ON) switching element for DC-DC converters and motor drives. It delivers 105 A (DC), 60 V V_DSS, and typ. 4.4 mΩ R_DS(ON) at V_GS = 10 V, with TO-220 package and heatsink-connected drain terminal.

For engineers reviewing the TK58E06N1,S1X datasheet, TK58E06N1,S1X pinout, TK58E06N1,S1X application, or TK58E06N1,S1X equivalent, key selection criteria include avalanche energy rating (158 mJ), gate charge (46 nC), thermal resistance (1.13 °C/W ch-to-case), and safe operating area under pulsed conditions - all critical for high-efficiency, high-reliability power stage design.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate structure to achieve low on-resistance while maintaining robust avalanche capability and fast switching performance. Its enhancement-mode threshold (2.0–4.0 V) ensures compatibility with standard 10 V gate drivers, and its rated 58 A pulsed drain current supports high peak-load operation in synchronous buck stages.

The device features integrated body diode with 63 ns reverse recovery time and 100 nC Q_rr, enabling efficient freewheeling in hard-switched topologies. Thermal design is anchored by a channel-to-case resistance of 1.13 °C/W, requiring mechanical mounting to a heatsink via the drain tab (Pin 2) for sustained 105 A operation.

Key Specifications

Pinout & Package

TK58E06N1,S1X is housed in a through-hole TO-220 package (TOSHIBA designation: 2-10X1A), with the drain terminal electrically and thermally connected to the metal tab for direct heatsink mounting. The package weighs 1.93 g and features standardized lead spacing for manual or wave soldering.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP110N6F7 and IRF1404ZLPBF, TK58E06N1,S1X offers the lowest R_DS(ON) and highest E_AS among TO-220 60 V N-ch MOSFETs, making it optimal for high-efficiency, high-ruggedness power stages where thermal and transient margins are critical.

Availability

TK58E06N1,S1X is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom rectifiers, and renewable energy inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for TK58E06N1,S1X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in discrete power MOSFET technology.

TK58E06N1,S1X belongs to Toshiba's U-MOSⅧ-H high-efficiency power MOSFET product line, engineered specifically for high-current, high-reliability DC-DC conversion and motor control applications demanding low conduction loss and strong avalanche capability.

FAQ

What is the maximum continuous drain current rating for TK58E06N1,S1X?

The TK58E06N1,S1X has a DC drain current rating of 105 A when case temperature (T_c) is maintained at 25 °C with an adequate heatsink. This rating drops with increasing T_c per the derating curve in Figure 8.11; at T_c = 100 °C, the usable I_D is approximately 50 A. Always verify thermal design using R_th(ch-c) = 1.13 °C/W.

Does TK58E06N1,S1X support avalanche operation, and what is its rated energy?

Yes, TK58E06N1,S1X is fully rated for single-pulse avalanche operation with E_AS = 158 mJ (T_ch = 25 °C, V_DD = 48 V). This specification is guaranteed per Toshiba's test conditions and enables reliable unclamped inductive switching - a key advantage over non-avalanche-rated MOSFETs in motor and SMPS designs.

What is the gate threshold voltage range for TK58E06N1,S1X, and how does it affect drive requirements?

The TK58E06N1,S1X has a gate threshold voltage V_th of 2.0–4.0 V (V_DS = 10 V, I_D = 0.5 mA), confirming enhancement-mode behavior. This range ensures full enhancement with standard 10 V gate drivers while avoiding unintended turn-on from noise; a minimum 5 V gate drive is recommended for robust operation across temperature and process variation.

How is thermal management implemented for TK58E06N1,S1X in high-power applications?

TK58E06N1,S1X uses Pin 2 (Drain) as the primary thermal path: the metal tab is electrically connected to drain and must be mounted to a heatsink using thermal interface material. With R_th(ch-c) = 1.13 °C/W, a 50 W power dissipation yields only ~56 °C temperature rise from case to channel - enabling compact thermal solutions when heatsink resistance is ≤2.0 °C/W.

Is TK58E06N1,S1X suitable for synchronous rectification, and what body diode parameters matter most?

Yes, TK58E06N1,S1X is well-suited for synchronous rectification due to its fast, low-loss body diode: t_rr = 63 ns and Q_rr = 100 nC (I_DR = 58 A, dI/dt = 100 A/µs). These values minimize reverse recovery loss and associated voltage overshoot, especially critical in high-frequency buck converters where diode conduction occurs during dead time.