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Toshiba Semiconductor and Storage TK5A55D(STA4,Q,M)

Name: TK5A55D(STA4,Q,M)
Brand: Toshiba Semiconductor and Storage
SKU: TK5A55D(STA4,Q,M)
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK5A55D(STA4,Q,M)

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: TK5A55D(STA4,Q,M).pdf

Description:: MOSFET N-CH 550V 5A TO220SIS

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Product details

Overview

TK5A55D(STA4,Q,M) from Toshiba is a silicon N-channel power MOSFET in the π-MOSⅦ family, designed for high-voltage switching regulator applications. It features 550 V drain-source breakdown voltage (V_(BR)DSS), 1.4 Ω typical R_DS(ON) at V_GS = 10 V and I_D = 2.5 A, 2.4 S typical forward transfer admittance, 5 A continuous drain current, and 35 W drain power dissipation at T_c = 25°C.

For engineers reviewing the TK5A55D(STA4,Q,M) datasheet, TK5A55D(STA4,Q,M) pinout, TK5A55D(STA4,Q,M) application, or TK5A55D(STA4,Q,M) equivalent, key selection criteria include avalanche ruggedness (165 mJ single-pulse E_AS), gate threshold voltage range (2.4–4.4 V), thermal resistance (R_th(ch-c) = 3.57 °C/W), and SC-67 package compatibility with through-hole mounting.

Technical Context

This N-channel enhancement-mode MOSFET operates with a gate threshold voltage of 2.4–4.4 V under V_DS = 10 V and I_D = 1 mA, enabling reliable turn-on control in isolated DC-DC converters. Its low R_DS(ON) and high |Y_fs| support efficient high-frequency switching up to several hundred kHz in flyback and forward topologies.

The device integrates an intrinsic body diode with V_DSF = −1.7 V at I_DR = 5 A and t_rr = 1000 ns, suitable for synchronous rectification or freewheeling paths where controlled reverse recovery is required. Avalanche-rated operation (I_AR = 5 A, E_AS = 165 mJ) allows robust handling of inductive switching transients without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	550 V - Withstands up to 550 V drain-source blocking voltage, suitable for 400 V AC-input offline SMPS designs.
R_DS(ON)	1.4 Ω (typ.) - Enables low conduction loss at 2.5 A, reducing heat generation in compact power stages.
\|Y_fs\|	2.4 S (typ.) - High transconductance supports fast, stable gate drive response under load variation.
E_AS	165 mJ - Single-pulse avalanche energy rating permits safe operation during inductive turn-off spikes without failure.
R_th(ch-c)	3.57 °C/W - Low channel-to-case thermal resistance enables effective heatsinking in TO-220-compatible layouts.
Q_g	11 nC - Total gate charge determines required driver current for <40 ns turn-on time in hard-switched applications.
t_rr	1000 ns - Body diode reverse recovery time impacts efficiency and EMI in discontinuous conduction mode (DCM) operation.

Pinout & Package

TK5A55D(STA4,Q,M) is housed in the SC-67 (Toshiba 2-10U1B) package - a through-hole variant mechanically and thermally compatible with TO-220AB, featuring a metal tab for direct heatsink attachment and 1.7 g typical weight.

Pin/Terminal	Circuit Role	Design Meaning
1 (Left)	Gate	Control terminal requiring ≤±30 V gate-source voltage; 11 nC total charge demands adequate driver slew rate.
2 (Center)	Drain	Main high-voltage power terminal; electrically connected to metal tab - must be isolated from heatsink unless referenced to same potential.
3 (Right)	Source	Power return and reference node for gate drive; forms common connection with driver ground in low-side configurations.

Key Features

Feature	Design Value
π-MOSⅦ process technology	Optimized cell structure delivering 1.4 Ω R_DS(ON) at 550 V rating - balances voltage capability and on-resistance better than prior generations.
Enhancement-mode gate	Self-turn-off behavior with V_th = 2.4–4.4 V ensures no unintended conduction during power-up or gate floating conditions.
Avalanche-rated design	Guaranteed 165 mJ single-pulse E_AS allows operation in non-clamped inductive circuits without derating or external protection.
Low Crss (3 pF)	Minimizes Miller effect, improving noise immunity and enabling stable high-speed switching with moderate gate resistors.
RoHS-compliant marking	[[G]]/RoHS COMPATIBLE label confirms compliance with Directive 2011/65/EU - verified via Toshiba's environmental certification process.

Applications

AC-DC Flyback Converters	Industrial DC-DC Isolated Supplies
Use Scenario: Primary-side switch in universal-input (85–265 V_AC) flyback converters delivering 10–60 W output power. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer to secondary winding; driven by UC3842/UC3845 or similar PWM controllers. Use Value: 550 V V_(BR)DSS provides 25% margin over reflected 400 V DC bus, while 1.4 Ω R_DS(ON) limits conduction loss to <1.5 W at full load.	Use Scenario: Main switching element in 24/48 V input industrial DC-DC modules powering PLC I/O or sensor interfaces. IC Role / Device Role / Timing Role: Primary-side MOSFET in forward or half-bridge topology operating at 100–250 kHz with fixed or adaptive frequency control. Use Value: 35 W P_D rating and 3.57 °C/W R_th(ch-c) enable operation at 70°C case temperature with standard heatsinking - eliminating need for forced air cooling.
LED Driver Power Stages	UPS Inverter Half-Bridge Legs
Use Scenario: Constant-current switching stage in high-bay LED drivers with 300–500 V DC bus derived from rectified AC line. IC Role / Device Role / Timing Role: High-side switch modulating LED string current using peak-current-mode control with slope compensation. Use Value: 10 μA max I_DSS at 550 V ensures minimal standby leakage, preserving efficiency during dimming or standby modes.	Use Scenario: Low-side switch in half-bridge inverter stages converting 350–400 V DC bus to 120/230 V AC output in line-interactive UPS systems. IC Role / Device Role / Timing Role: Fast-switching power transistor synchronized with complementary high-side device; requires precise dead-time control. Use Value: 18 ns rise time and 8 ns fall time support clean square-wave output with <5% distortion at 50 Hz fundamental, minimizing transformer core loss.

AC-DC Flyback Converters

Industrial DC-DC Isolated Supplies

Use Scenario: Primary-side switch in universal-input (85–265 V_AC) flyback converters delivering 10–60 W output power.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer to secondary winding; driven by UC3842/UC3845 or similar PWM controllers.

Use Value: 550 V V_(BR)DSS provides 25% margin over reflected 400 V DC bus, while 1.4 Ω R_DS(ON) limits conduction loss to <1.5 W at full load.

Use Scenario: Main switching element in 24/48 V input industrial DC-DC modules powering PLC I/O or sensor interfaces.

IC Role / Device Role / Timing Role: Primary-side MOSFET in forward or half-bridge topology operating at 100–250 kHz with fixed or adaptive frequency control.

Use Value: 35 W P_D rating and 3.57 °C/W R_th(ch-c) enable operation at 70°C case temperature with standard heatsinking - eliminating need for forced air cooling.

LED Driver Power Stages

UPS Inverter Half-Bridge Legs

Use Scenario: Constant-current switching stage in high-bay LED drivers with 300–500 V DC bus derived from rectified AC line.

IC Role / Device Role / Timing Role: High-side switch modulating LED string current using peak-current-mode control with slope compensation.

Use Value: 10 μA max I_DSS at 550 V ensures minimal standby leakage, preserving efficiency during dimming or standby modes.

Use Scenario: Low-side switch in half-bridge inverter stages converting 350–400 V DC bus to 120/230 V AC output in line-interactive UPS systems.

IC Role / Device Role / Timing Role: Fast-switching power transistor synchronized with complementary high-side device; requires precise dead-time control.

Use Value: 18 ns rise time and 8 ns fall time support clean square-wave output with <5% distortion at 50 Hz fundamental, minimizing transformer core loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V V_(BR)DSS, 1.2 Ω R_DS(ON), Zener-protected gate, TO-220FP package (full-pack)	Lower voltage rating reduces margin in 400 V DC bus designs; integrated gate protection simplifies layout but increases cost	Select when gate robustness against transient overstress is prioritized over maximum voltage headroom
IRFBC40APBF	600 V V_(BR)DSS, 1.4 Ω R_DS(ON), legacy Siliconix process, TO-220AB package	Higher voltage rating improves safety margin but exhibits higher Q_gd (7.5 nC vs. 5 nC), increasing switching loss at >100 kHz	Select when operating near 550 V stress levels or when legacy qualification data is required for long-lifecycle programs

Compared with STP5NK50ZFP and IRFBC40APBF, TK5A55D(STA4,Q,M) offers optimal trade-off between 550 V rating, 1.4 Ω on-resistance, and 5 nC Q_gd - making it especially suitable for cost-sensitive, thermally constrained 65–100 kHz flyback converters where avalanche ruggedness and thermal resistance are critical.

Availability

TK5A55D(STA4,Q,M) is available at Aetrix Electronics and suitable for AC-DC power supplies, industrial DC-DC converters, and LED driver power stages requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for TK5A55D(STA4,Q,M) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with global manufacturing and quality systems certified to ISO 9001 and IATF 16949.

TK5A55D(STA4,Q,M) belongs to Toshiba's π-MOSⅦ high-voltage power MOSFET product line, engineered specifically for energy-efficient, high-reliability switching power supplies in industrial and consumer equipment.

FAQ

What is the maximum continuous drain current rating for TK5A55D(STA4,Q,M) at 25°C case temperature?

The TK5A55D(STA4,Q,M) has a maximum continuous drain current (I_D) rating of 5 A at T_c = 25°C, as specified in its Absolute Maximum Ratings table. This value assumes proper heatsinking to maintain channel temperature below 150°C and is derated linearly with increasing case temperature - dropping to approximately 2.5 A at T_c = 100°C per the PD–Tc curve.

Does TK5A55D(STA4,Q,M) include integrated gate protection?

No, TK5A55D(STA4,Q,M) does not include integrated gate protection such as built-in Zener clamps. Its gate-source voltage rating is ±30 V, and it requires external gate protection circuitry - typically a 15–18 V Zener diode between gate and source - to prevent damage from voltage transients exceeding this limit during switching or ESD events.

Can TK5A55D(STA4,Q,M) be used in avalanche mode for energy recovery applications?

Yes, TK5A55D(STA4,Q,M) is explicitly rated for single-pulse avalanche operation with E_AS = 165 mJ (tested at V_DD = 90 V, L = 11.4 mH, I_AR = 5 A). However, repetitive avalanche is limited to E_AR = 3.5 mJ per pulse, and sustained avalanche operation requires strict thermal management to avoid exceeding T_ch = 150°C.

What is the gate threshold voltage range for TK5A55D(STA4,Q,M), and how does it affect drive requirements?

The gate threshold voltage (V_th) for TK5A55D(STA4,Q,M) is specified as 2.4–4.4 V at V_DS = 10 V and I_D = 1 mA. This wide range means gate drive must exceed 5 V to ensure full enhancement across unit-to-unit variation and temperature drift; 10 V is recommended for minimum R_DS(ON) and stable switching performance.

Is TK5A55D(STA4,Q,M) suitable for use in automotive applications?

No, TK5A55D(STA4,Q,M) is not qualified for automotive applications. Toshiba explicitly states that this device is not intended for use in equipment requiring extraordinarily high reliability - including automotive systems - and excludes it from AEC-Q101 qualification. Its datasheet specifies "UNINTENDED USE" for vehicles, and no automotive-grade screening, testing, or PPAP documentation is provided for TK5A55D(STA4,Q,M).

TK5A55D(STA4,Q,M) Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: π-MOSVII

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 550 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.7Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 4.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 540 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220SIS

TK5A55D(STA4,Q,M) FAQ

1.How can I place an order for TK5A55D(STA4,Q,M) through Aetrix?

Please submit a Request for Quotation (RFQ) for TK5A55D(STA4,Q,M) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK5A55D(STA4,Q,M) reliable?

The price and inventory of TK5A55D(STA4,Q,M) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK5A55D(STA4,Q,M) is usually 5 days.

3.What payment methods are accepted for TK5A55D(STA4,Q,M)?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK5A55D(STA4,Q,M) transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK5A55D(STA4,Q,M)?

TK5A55D(STA4,Q,M) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK5A55D(STA4,Q,M) order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK5A55D(STA4,Q,M)?

For technical support, including TK5A55D(STA4,Q,M) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK5A55D(STA4,Q,M) requirements.

6.How does Aetrix verify that TK5A55D(STA4,Q,M) is sourced from the original manufacturer or authorized distributors?

All TK5A55D(STA4,Q,M) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK5A55D(STA4,Q,M) meets industry standards.

7.What is the process for return or replacement of TK5A55D(STA4,Q,M)?

All TK5A55D(STA4,Q,M) units undergo pre-shipment inspection (PSI). If there is an issue with TK5A55D(STA4,Q,M), returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK5A55D(STA4,Q,M) part is unused and in its original packaging.

Return procedure for TK5A55D(STA4,Q,M):

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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