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Toshiba Semiconductor and Storage TK5A90E,S4X
- Part No.:
- TK5A90E,S4X
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
TK5A90E,S4X.pdf
- Description:
- PB-F POWER MOSFET TRANSISTOR TO-
- Quantity:
- Payment:
- Shipping:
Inventory:25
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Product details
Overview
TK5A90E,S4X from Toshiba is a silicon N-channel power MOSFET in the π-MOSⅢ family, designed for high-voltage switching applications. It delivers 900 V drain-source breakdown voltage, 4.5 A DC drain current, and 2.5 Ω typical RDS(ON) at VGS = 10 V, enabling efficient operation in offline AC-DC converters and industrial SMPS.
For engineers reviewing the TK5A90E,S4X datasheet, TK5A90E,S4X pinout, TK5A90E,S4X application, or TK5A90E,S4X equivalent, key selection criteria include its 900 V rating, TO-220SIS package with isolated heatsink capability, avalanche ruggedness (202 mJ), and gate threshold range (2.5–4.0 V) suitable for standard logic-level drive in high-reliability power stages.
Technical Context
This MOSFET employs a planar vertical structure optimized for high-voltage blocking and low conduction loss. Its enhancement-mode operation ensures zero gate current in steady state, while the 3.125 °C/W channel-to-case thermal resistance supports reliable heat transfer to external heatsinks in continuous 40 W dissipation scenarios.
The device features integrated body diode with 1000 ns reverse recovery time and 6.5 µC Qrr, enabling hard-switched flyback and forward converter topologies. Its 15 V/ns dv/dt ruggedness and single-pulse avalanche rating confirm robustness against transient overvoltage events in unclamped inductive loads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 900 V - Withstands full mains rectified voltage (e.g., 650 V DC bus + margin) without breakdown. |
| RDS(ON) (typ.) | 2.5 Ω @ VGS = 10 V - Enables <11.3 W conduction loss at 4.5 A DC, reducing thermal stress in compact designs. |
| ID (DC) | 4.5 A - Supports continuous output power up to ~200 W in 230 VAC offline SMPS with proper heatsinking. |
| EAS | 202 mJ - Absorbs energy from inductive kickback (e.g., relay coils, transformer leakage) without failure. |
| Vth | 2.5–4.0 V - Compatible with 3.3 V/5 V microcontroller GPIO or dedicated gate drivers without level shifting. |
| Ciss | 950 pF - Determines gate drive power requirement (~1.9 mW per MHz at 10 V swing) for PWM frequencies ≤100 kHz. |
| Qg | 20 nC - Requires ~200 µC total charge per switching cycle, guiding gate driver peak current selection (e.g., ≥2 A for 100 ns rise). |
Pinout & Package
TK5A90E,S4X uses the TO-220SIS package (Toshiba designation: 2-10U1S), featuring electrically isolated tab for direct heatsink mounting without insulating pads. The plastic body provides creepage/clearance compliant with 2000 VRMS isolation rating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives voltage-controlled signal to modulate channel conductivity; requires low-impedance drive due to 20 nC Qg. |
| 2 (Drain) | High-side power terminal | Connected to high-voltage input (e.g., rectified AC line); carries full load current and withstands 900 V transients. |
| 3 (Source) | Reference and return path | Serves as common reference for gate drive and current sensing; tied to power ground in low-side switch configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) | 2.5 Ω typ. reduces I²R losses and simplifies thermal design in space-constrained 4.5 A applications. |
| Avalanche-rated | 202 mJ single-pulse energy handling enables reliable operation in unclamped inductive switching without snubbers. |
| Isolated package | TO-220SIS tab provides 2000 VRMS isolation, eliminating need for insulating hardware in high-voltage heatsink mounting. |
| Enhancement-mode Vth | 2.5–4.0 V range ensures turn-on with standard logic-level drivers and avoids accidental activation during power-up. |
| Low IDSS | 10 µA max at 720 V ensures minimal standby leakage in high-impedance bias networks and energy-saving modes. |
Applications
| Industrial SMPS | AC-DC Adapters |
|---|---|
|
Use Scenario: 100–250 W open-frame power supply for PLC I/O modules and motor drives. IC Role / Device Role / Timing Role: Primary-side switching transistor in discontinuous conduction mode (DCM) flyback converter operating at 65 kHz. Use Value: 900 V rating accommodates 380 VAC three-phase rectified input; 2.5 Ω RDS(ON) maintains >88% efficiency at full load. |
Use Scenario: Universal-input (90–264 VAC) 65 W laptop adapter with active PFC front-end. IC Role / Device Role / Timing Role: Main switch in boost PFC stage, handling 4.5 A RMS input current at 100 kHz. Use Value: Avalanche ruggedness prevents failure during line surges; TO-220SIS isolation simplifies EMI-filter heatsink integration. |
| LED Street Lighting | UPS Inverters |
|
Use Scenario: Constant-current driver for 100 W LED arrays in outdoor pole-mounted luminaires. IC Role / Device Role / Timing Role: High-side switch in buck-boost topology regulating output across wide input (200–400 VDC) range. Use Value: 150 °C max channel temperature rating allows operation in sealed enclosures up to 70 °C ambient without derating. |
Use Scenario: DC-AC H-bridge in 1 kVA online UPS with battery backup and pure sine wave output. IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg, commutating 4.5 A RMS at 20 kHz PWM frequency. Use Value: 1000 ns trr and 18 A Irr minimize diode recovery losses during dead-time transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP5NK90ZFP | 900 V, 4.5 A, RDS(ON) = 2.3 Ω typ., TO-220FP package (non-isolated tab) | Lacks 2000 VRMS isolation; requires insulating pad for heatsink mounting | Preferred where cost sensitivity outweighs isolation requirement and PCB layout permits insulation. |
| FQP9N90C | 900 V, 8.5 A, RDS(ON) = 1.4 Ω typ., TO-3P package (larger footprint, non-isolated) | Higher current rating but larger size; no isolation; different thermal resistance (0.83 °C/W) | Selected when higher current headroom and lower RDS(ON) justify board area increase and added mounting complexity. |
Compared with STP5NK90ZFP and FQP9N90C, the TK5A90E,S4X offers unique combination of isolation, moderate current rating, and proven avalanche performance in compact TO-220SIS-making it optimal for space-constrained, safety-critical industrial power supplies where heatsink integration simplicity matters.
Availability
TK5A90E,S4X is available at Aetrix Electronics and suitable for industrial SMPS, AC-DC adapters, and LED street lighting requiring stable component supply and long-term lifecycle support.
Supply support for TK5A90E,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and industrial-grade performance.
The TK5A90E,S4X belongs to Toshiba's π-MOSⅢ high-voltage MOSFET product line, engineered specifically for robust, high-efficiency switching in offline power conversion systems up to 900 V.
FAQ
What is the maximum allowable drain-source voltage for TK5A90E,S4X?
The TK5A90E,S4X has a guaranteed drain-source breakdown voltage (V(BR)DSS) of 900 V minimum. This rating ensures safe operation under worst-case transient conditions in 400 VDC bus applications, including line surges and inductive spikes. Operation beyond this voltage risks irreversible avalanche failure, even if within absolute maximum ratings for short durations.
Does TK5A90E,S4X require a heatsink in typical applications?
Yes, the TK5A90E,S4X requires a heatsink in all continuous-duty applications. With a channel-to-case thermal resistance of 3.125 °C/W and 40 W maximum power dissipation, even at 4.5 A and 2.5 Ω RDS(ON), junction temperature exceeds safe limits without external cooling. The TO-220SIS package's isolated tab enables direct mounting to grounded heatsinks without insulators.
Can TK5A90E,S4X be driven directly by a 3.3 V microcontroller GPIO?
No-while the TK5A90E,S4X gate threshold voltage starts at 2.5 V, full enhancement requires VGS ≥ 10 V to achieve rated RDS(ON) of 2.5 Ω. A 3.3 V GPIO cannot provide sufficient overdrive, resulting in excessive conduction loss and thermal runaway. A dedicated gate driver (e.g., TC4420) or level-shifting circuit is required for reliable switching.
What is the significance of the "S4X" suffix in TK5A90E,S4X?
The "S4X" suffix denotes Toshiba's internal packaging and marking variant: "S" indicates TO-220SIS package, "4" specifies tape-and-reel packaging format, and "X" identifies RoHS-compliant lead-free plating per EU Directive 2011/65/EU. This suffix confirms compliance, isolation capability, and automated assembly readiness for TK5A90E,S4X.
How does the body diode performance of TK5A90E,S4X affect synchronous rectification?
The TK5A90E,S4X body diode has a reverse recovery time (trr) of 1000 ns and peak reverse recovery current (Irr) of 18 A, making it unsuitable for synchronous rectification above ~50 kHz. These parameters cause significant switching loss and EMI in high-frequency secondary-side applications. For sync rectification, dedicated low-trr MOSFETs like SiC Schottky alternatives are recommended instead of relying on TK5A90E,S4X's intrinsic diode.
TK5A90E,S4X Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 900 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.1Ohm @ 2.3A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 450µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 950 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 40W (Tc)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220SIS
TK5A90E,S4X FAQ
1.How can I place an order for TK5A90E,S4X through Aetrix?
Please submit a Request for Quotation (RFQ) for TK5A90E,S4X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK5A90E,S4X reliable?
The price and inventory of TK5A90E,S4X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK5A90E,S4X is usually 5 days.
3.What payment methods are accepted for TK5A90E,S4X?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK5A90E,S4X transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK5A90E,S4X?
TK5A90E,S4X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK5A90E,S4X order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK5A90E,S4X?
For technical support, including TK5A90E,S4X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK5A90E,S4X requirements.
6.How does Aetrix verify that TK5A90E,S4X is sourced from the original manufacturer or authorized distributors?
All TK5A90E,S4X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK5A90E,S4X meets industry standards.
7.What is the process for return or replacement of TK5A90E,S4X?
All TK5A90E,S4X units undergo pre-shipment inspection (PSI). If there is an issue with TK5A90E,S4X, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK5A90E,S4X part is unused and in its original packaging.
Return procedure for TK5A90E,S4X:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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