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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK5R0A15Q5,S4X

Name: TK5R0A15Q5,S4X
Brand: Toshiba Semiconductor and Storage
SKU: TK5R0A15Q5,S4X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK5R0A15Q5,S4X

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: TK5R0A15Q5,S4X.pdf

Description:: 150V UMOS10-HSD TO-220SIS 5MOHM

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Product details

Overview

TK5R0A15Q5,S4X from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in the U-MOS-H process, designed for high-frequency switching in DC-DC converters and motor drivers. It delivers R_DS(ON) = 4.3 mΩ (typ., V_GS = 10 V), fast reverse recovery time t_rr = 52 ns (typ.), Q_rr = 55 nC (typ.), and rated for 150 V V_DSS, 76 A I_D (DC), and 480 A I_DP.

For engineers reviewing the TK5R0A15Q5,S4X datasheet, TK5R0A15Q5,S4X pinout, TK5R0A15Q5,S4X application, or TK5R0A15Q5,S4X equivalent, key selection criteria include its low gate charge (Q_SW = 26 nC typ.), enhanced body diode performance, TO-220SIS isolation-rated package, and suitability for synchronous rectification and hard-switched topologies requiring tight thermal control.

Technical Context

This device uses Toshiba's U-MOS-H trench-gate structure to achieve low R_DS(ON) and reduced gate-drain charge (Q_gd = 44 nC typ.), enabling high-efficiency operation in continuous conduction mode (CCM) DC-DC converters. Its optimized body diode exhibits t_rr = 52 ns and Q_rr = 55 nC - critical for minimizing switching loss and voltage overshoot during freewheeling.

The TK5R0A15Q5,S4X operates as an enhancement-mode MOSFET with V_th = 3.1–4.5 V and supports gate drive at standard 10 V logic levels. Its isolated TO-220SIS package provides 2000 V_RMS isolation and enables direct heatsink mounting without additional insulation, supporting high-power density designs up to 53 W P_D (T_c = 25 °C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150 V - maximum blocking voltage for use in 48 V input bus systems with margin against transients
R_DS(ON)	4.3 mΩ (typ., V_GS = 10 V) - enables <1.5 W conduction loss at 38 A, reducing thermal load in compact converters
t_rr / Q_rr	52 ns / 55 nC (typ.) - minimizes reverse recovery energy loss and EMI in synchronous buck and half-bridge topologies
Q_SW	26 nC (typ.) - lowers gate drive power requirement and enables >500 kHz switching with standard drivers
I_D (DC)	76 A - supports high-current output stages in industrial motor drives and server VRMs
V_ISO(RMS)	2000 V - allows safe operation with floating gate drive and direct heatsink mounting in isolated power supplies
R_th(ch-c)	2.78 °C/W - enables efficient heat transfer to heatsink, limiting junction rise to ~212 °C at 53 W dissipation

Pinout & Package

Package: TO-220SIS (Toshiba 2-10U1S), isolated case, 1.56 g typical weight, screw-mount compatible with 0.6 N·m torque.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; requires ≤±20 V gate-source voltage; sensitive to ESD - must be handled with grounding precautions
2	Drain	High-side switching node; electrically isolated from case; connects to input bus or transformer secondary
3	Source	Reference node for gate drive; tied to power ground or low-side switch source; forms return path for load current

Key Features

Feature	Design Value
U-MOS-H trench process	Enables 4.3 mΩ R_DS(ON) at 150 V rating - 25% lower on-resistance vs. prior-generation U-MOS-V devices
Optimized body diode	52 ns t_rr and 55 nC Q_rr reduce switching loss and voltage spike in non-synchronous rectification
Low Q_gd/Q_g ratio	Q_gd = 44 nC of total Q_g = 96 nC - improves Miller immunity and enables stable hard-switching above 300 kHz
Isolated TO-220SIS package	2000 V_RMS isolation eliminates need for insulating pads - simplifies thermal design and reduces BOM count
Enhancement-mode threshold	V_th = 3.1–4.5 V ensures reliable turn-on with 5 V or 10 V gate drivers while preventing accidental conduction

Applications

Server VRM Power Stage	Industrial DC-DC Converter
Use Scenario: High-current, high-efficiency point-of-load regulation in AI accelerator servers with 48 V input bus. IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter; switches at 400–600 kHz. Use Value: 4.3 mΩ R_DS(ON) and 26 nC Q_SW enable >95% efficiency at 100 A output while maintaining junction temperature below 125 °C.	Use Scenario: Isolated 24 V/48 V to 12 V step-down converter in factory automation PLCs. IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward topology; handles 150 V transient spikes. Use Value: 2000 V_RMS isolation and 150 V V_DSS eliminate external isolation barriers, reducing footprint by 30% vs. non-isolated alternatives.
Brushless Motor Driver	Telecom Rectifier Module
Use Scenario: 3-phase inverter stage for 500 W BLDC motors in HVAC blowers and pumps. IC Role / Device Role / Timing Role: Low-side switch in 6-step commutation; conducts 76 A peak current with PWM gating. Use Value: Fast t_rr = 52 ns prevents shoot-through during dead-time transitions and reduces snubber losses by 40%.	Use Scenario: Secondary-side synchronous rectifier in 48 V telecom rectifier modules delivering 2000 W output. IC Role / Device Role / Timing Role: Output rectifier operating in CCM at 200 kHz; replaces Schottky diodes to improve efficiency. Use Value: Q_rr = 55 nC and low R_DS(ON) cut conduction + recovery losses by 3.2 W per device vs. 60 V Schottky alternatives.

Server VRM Power Stage

Industrial DC-DC Converter

Use Scenario: High-current, high-efficiency point-of-load regulation in AI accelerator servers with 48 V input bus.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter; switches at 400–600 kHz.

Use Value: 4.3 mΩ R_DS(ON) and 26 nC Q_SW enable >95% efficiency at 100 A output while maintaining junction temperature below 125 °C.

Use Scenario: Isolated 24 V/48 V to 12 V step-down converter in factory automation PLCs.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward topology; handles 150 V transient spikes.

Use Value: 2000 V_RMS isolation and 150 V V_DSS eliminate external isolation barriers, reducing footprint by 30% vs. non-isolated alternatives.

Brushless Motor Driver

Telecom Rectifier Module

Use Scenario: 3-phase inverter stage for 500 W BLDC motors in HVAC blowers and pumps.

IC Role / Device Role / Timing Role: Low-side switch in 6-step commutation; conducts 76 A peak current with PWM gating.

Use Value: Fast t_rr = 52 ns prevents shoot-through during dead-time transitions and reduces snubber losses by 40%.

Use Scenario: Secondary-side synchronous rectifier in 48 V telecom rectifier modules delivering 2000 W output.

IC Role / Device Role / Timing Role: Output rectifier operating in CCM at 200 kHz; replaces Schottky diodes to improve efficiency.

Use Value: Q_rr = 55 nC and low R_DS(ON) cut conduction + recovery losses by 3.2 W per device vs. 60 V Schottky alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N15F7	R_DS(ON) = 5.2 mΩ (V_GS = 10 V); t_rr = 75 ns; no isolation rating; TO-220FP package	Lacks 2000 V_RMS isolation - requires insulating pad and increases thermal resistance by 1.8 °C/W	Select when isolation is unnecessary and cost sensitivity outweighs thermal performance
IXFH50N15X3	R_DS(ON) = 4.8 mΩ; Q_rr = 82 nC; TO-247AC package; higher gate charge (Q_g = 115 nC)	Higher Q_rr increases switching loss in high-frequency CCM operation; larger footprint limits board density	Prefer for ruggedized industrial inverters where avalanche energy (E_AS = 220 mJ) exceeds TK5R0A15Q5,S4X's 136 mJ

Compared with STP110N15F7 and IXFH50N15X3, the TK5R0A15Q5,S4X offers superior combination of low R_DS(ON), fast body diode, and integrated isolation - making it optimal for space-constrained, high-efficiency, thermally demanding applications where layout simplicity and reliability are prioritized over raw avalanche robustness or lowest unit cost.

Availability

TK5R0A15Q5,S4X is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and brushless motor drivers requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support through 2030.

Supply support for TK5R0A15Q5,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power ICs, and storage solutions with focus on energy efficiency, reliability, and industrial-grade robustness.

The TK5R0A15Q5,S4X belongs to Toshiba's U-MOS-H high-voltage MOSFET product line, engineered specifically for high-frequency, high-efficiency power conversion in datacenter, industrial, and telecom infrastructure.

FAQ

What is the maximum continuous drain current rating for TK5R0A15Q5,S4X at 25 °C case temperature?

The TK5R0A15Q5,S4X has a DC drain current rating of 76 A at T_c = 25 °C, as specified in its Absolute Maximum Ratings table. This value assumes proper heatsinking and is limited by silicon capability-not package thermal resistance. At elevated case temperatures, derating applies per the PD–Tc curve (Fig. 8.14), with 53 W maximum power dissipation at 25 °C case.

Does TK5R0A15Q5,S4X support gate drive with 5 V logic-level controllers?

The TK5R0A15Q5,S4X has a gate threshold voltage range of 3.1–4.5 V, so it will conduct at 5 V gate drive but may not achieve full enhancement. For guaranteed R_DS(ON) ≤ 4.3 mΩ, a 10 V gate-source voltage is required per datasheet test conditions. Using 5 V drive results in higher on-resistance and increased conduction loss - not recommended for high-current applications.

How does the body diode performance of TK5R0A15Q5,S4X compare to standard silicon MOSFETs?

The TK5R0A15Q5,S4X features a specially optimized body diode with t_rr = 52 ns and Q_rr = 55 nC (typ.), significantly faster than conventional 150 V MOSFETs (typically >100 ns t_rr). This reduces reverse recovery loss and voltage overshoot in hard-switched topologies - confirmed by Toshiba's characterization under IDR = 19 A, -dIDR/dt = 100 A/µs conditions.

Is TK5R0A15Q5,S4X RoHS compliant and lead-free?

Yes - the TK5R0A15Q5,S4X is RoHS compliant. Per Toshiba's marking note (Section 7), underlined lot numbers indicate [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] status. The device meets Directive 2011/65/EU and contains no intentionally added lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits.

What is the thermal resistance from channel to case (R_th(ch-c)) for TK5R0A15Q5,S4X?

The channel-to-case thermal resistance of TK5R0A15Q5,S4X is 2.78 °C/W (max), measured under T_c = 25 °C conditions. This value reflects the internal chip-to-package interface and is critical for calculating junction temperature rise: T_j = T_c + (P_D × R_th(ch-c)). It assumes proper mounting with 0.6 N·m screw torque and thermal interface material.

TK5R0A15Q5,S4X Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSX-H

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 76A (Ta), 76A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 5mOhm @ 38A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 2.2mA

Gate Charge (Qg) (Max) @ Vgs:: 96 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7820 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 53W (Tc)

Operating Temperature:: 175°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220SIS

TK5R0A15Q5,S4X FAQ

1.How can I place an order for TK5R0A15Q5,S4X through Aetrix?

Please submit a Request for Quotation (RFQ) for TK5R0A15Q5,S4X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK5R0A15Q5,S4X reliable?

The price and inventory of TK5R0A15Q5,S4X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK5R0A15Q5,S4X is usually 5 days.

3.What payment methods are accepted for TK5R0A15Q5,S4X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK5R0A15Q5,S4X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK5R0A15Q5,S4X?

TK5R0A15Q5,S4X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK5R0A15Q5,S4X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK5R0A15Q5,S4X?

For technical support, including TK5R0A15Q5,S4X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK5R0A15Q5,S4X requirements.

6.How does Aetrix verify that TK5R0A15Q5,S4X is sourced from the original manufacturer or authorized distributors?

All TK5R0A15Q5,S4X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK5R0A15Q5,S4X meets industry standards.

7.What is the process for return or replacement of TK5R0A15Q5,S4X?

All TK5R0A15Q5,S4X units undergo pre-shipment inspection (PSI). If there is an issue with TK5R0A15Q5,S4X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK5R0A15Q5,S4X part is unused and in its original packaging.

Return procedure for TK5R0A15Q5,S4X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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