Toshiba Semiconductor and Storage TK5R1P08QM,RQ

Overview

TK5R1P08QM from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in DPAK package, designed for high-efficiency switching applications. It delivers R_DS(ON) = 4.2 mΩ (typ., V_GS = 10 V), Q_SW = 17 nC (typ.), and V_DSS = 80 V, enabling low-conduction-loss operation in DC-DC converters and motor drivers.

For engineers reviewing the TK5R1P08QM datasheet, TK5R1P08QM pinout, TK5R1P08QM application, or TK5R1P08QM equivalent, key selection criteria include its 84 A DC drain current rating, 1.43 °C/W channel-to-case thermal resistance, and gate threshold voltage range of 2.5–3.5 V - all critical for thermally constrained, high-frequency synchronous rectification designs.

Technical Context

This U-MOS-H process MOSFET features optimized charge characteristics for fast switching: Q_g = 56 nC (typ.) and Q_oss = 66 nC (typ.) at V_DS = 40 V, supporting high-frequency PWM operation up to several hundred kHz. Its low Crss (55 pF typ.) minimizes Miller effect-induced turn-off delay.

The device operates in enhancement mode with V_th = 2.5–3.5 V and supports gate drive from standard 6–10 V logic-level sources. Its 80 V V_DSS rating and 33 mJ single-pulse avalanche energy (E_AS) provide robustness against inductive switching transients in motor and regulator topologies.

Key Specifications

Pinout & Package

TK5R1P08QM uses the industry-standard DPAK (TO-252) surface-mount package (TOSHIBA designation: 2-7N1S), with exposed drain pad for thermal conduction to PCB copper. The heatsink-connected drain terminal provides low thermal impedance path to board.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STL110N8F7AG and IRF1407PBF, the TK5R1P08QM offers superior thermal coupling via DPAK drain pad and lowest Q_SW among the three, making it optimal for high-frequency, thermally dense DC-DC and motor drive layouts where gate drive loss and junction temperature margin are critical.

Availability

TK5R1P08QM is available at Aetrix Electronics and suitable for high-efficiency DC-DC converters, switching voltage regulators, and motor drivers requiring stable component supply across production lifecycles.

Supply support for TK5R1P08QM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, headquartered in Japan with ISO/TS 16949-certified production facilities.

The TK5R1P08QM belongs to Toshiba's U-MOS-H power MOSFET product line, engineered specifically for high-efficiency, high-current switching in compact surface-mount power systems including server PSUs, industrial motor controls, and renewable energy inverters.

FAQ

What is the maximum continuous drain current rating for TK5R1P08QM?

The TK5R1P08QM has a DC drain current rating of 84 A at T_c = 25 °C, limited by package thermal capability rather than silicon limits. At elevated case temperatures, the current must be derated per the PD–Tc curve (Fig. 8.14); for example, at T_c = 100 °C, the usable I_D drops to approximately 45 A. This rating assumes proper PCB copper area and thermal vias under the drain pad.

Does TK5R1P08QM support 3.3 V gate drive?

Yes, TK5R1P08QM supports 3.3 V gate drive due to its enhancement-mode V_th range of 2.5–3.5 V. However, at V_GS = 3.3 V, R_DS(ON) rises significantly (≥12 mΩ typ.), so it is recommended only for low-duty-cycle or low-current applications. For full 4.2 mΩ performance, V_GS ≥ 6 V is required, making 5 V or 10 V drive optimal for high-efficiency operation.

What is the body diode reverse recovery performance of TK5R1P08QM?

The TK5R1P08QM exhibits t_rr = 53 ns and Q_rr = 298 nC (typ.) under conditions of I_DR = 21 A, -dI_DR/dt = 100 A/µs, and V_GS = 0 V. These values indicate fast, soft recovery suitable for synchronous rectification in buck converters, minimizing voltage overshoot and EMI compared to standard MOSFETs with slower diodes.

Is TK5R1P08QM suitable for avalanche operation in motor drive circuits?

Yes, TK5R1P08QM is rated for single-pulse avalanche energy E_AS = 33 mJ at V_DD = 64 V and T_ch = 25 °C, with I_AS = 84 A. This makes it suitable for controlled avalanche use in brushed DC or BLDC motor freewheeling paths, provided channel temperature remains ≤175 °C and pulse duty is kept low (≤1%). Repetitive avalanche is not guaranteed.

What PCB layout considerations are critical for TK5R1P08QM thermal performance?

Optimal thermal performance for TK5R1P08QM requires a minimum 200 mm² copper pour connected to the drain pad (Pin 2) with ≥6 thermal vias (0.3 mm diameter, filled or plated) to inner ground/power planes. Trace width for source (Pin 3) should exceed 3 mm to limit resistive heating. Gate loop inductance must be minimized (<2 nH) using short, wide traces and local 100 nF decoupling near the gate resistor to prevent oscillation during fast switching.