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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK5R3A06PL,S4X

Name: TK5R3A06PL,S4X
Brand: Toshiba Semiconductor and Storage
SKU: TK5R3A06PL,S4X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK5R3A06PL,S4X

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: TK5R3A06PL,S4X.pdf

Description:: X35 PB-F POWER MOSFET TRANSISTOR

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Product details

Overview

TK5R3A06PL,S4X from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel U-MOS-H power MOSFET optimized for high-efficiency DC-DC converters and switching voltage regulators. It delivers R_DS(ON) = 4.1 mΩ (typ., V_GS = 10 V), Q_SW = 11 nC (typ.), Q_oss = 32 nC (typ.), and supports 60 V V_DSS, 56 A I_D (DC), in TO-220SIS package with isolated source terminal.

For engineers reviewing the TK5R3A06PL,S4X datasheet, TK5R3A06PL,S4X pinout, TK5R3A06PL,S4X application, or TK5R3A06PL,S4X equivalent, key selection criteria include low gate/drain charge for fast switching in synchronous buck topologies, thermal robustness (T_ch = 175 °C), and isolation-rated packaging for high-side switch configurations in industrial motor drivers and telecom power supplies.

Technical Context

This U-MOS-H device uses trench-gate silicon process to achieve low R_DS(ON) and minimized output charge. Its gate threshold voltage range (1.5–2.5 V) enables compatibility with 3.3 V and 5 V logic-level drive, while the isolated source terminal (TO-220SIS) allows direct mounting to heatsinks without electrical shorting.

Dynamic performance is characterized at V_DD ≈ 30 V, I_D = 28 A, with t_on = 19 ns and t_off = 35 ns under R_GG = 4.7 Ω. The integrated body diode exhibits t_rr = 38 ns and Q_rr = 40 nC, supporting hard-switched and quasi-resonant converter designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum drain-source blocking voltage for 48 V bus applications with margin
R_DS(ON)	4.1 mΩ (typ., V_GS = 10 V) - Enables <1 W conduction loss at 50 A in 12 V output rails
Q_SW	11 nC (typ.) - Reduces gate drive power and enables >1 MHz operation with low-loss switching
Q_oss	32 nC (typ.) - Low output charge minimizes turn-off energy and improves light-load efficiency
I_D (DC)	56 A (T_c = 25 °C) - Sustains continuous current in high-power SMPS with forced-air cooling
R_th(ch-c)	4.16 °C/W - Enables efficient heat transfer to external heatsink in compact TO-220SIS footprint
V_th	1.5–2.5 V - Ensures reliable turn-on with standard logic-level PWM controllers
V_ISO(RMS)	2000 V - Provides reinforced isolation between drain and source terminals for high-side use

Pinout & Package

Package: TO-220SIS (TOSHIBA 2-10U1S), thermally enhanced with electrically isolated source terminal for direct heatsink mounting.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control input; requires ≤±20 V drive; sensitive to ESD (IGSS ≤ ±0.1 µA)
2	Drain	High-side switch node; rated for 60 V blocking and 280 A pulsed avalanche current
3	Source	Isolated return path; electrically separated from case for floating gate drive in high-side configuration

Key Features

Feature	Design Value
U-MOS-H trench structure	Reduces R_DS(ON) × Q_g figure-of-merit by 35% vs. planar MOSFETs at same voltage class
Isolated source terminal (TO-220SIS)	Eliminates need for insulating washers or thermal pads when mounting to grounded heatsinks
Low Q_oss/Q_gd ratio	Improves voltage-dependent switching behavior and reduces Miller-induced shoot-through risk
Enhancement-mode V_th	Guarantees normally-off operation for safe power-up sequencing in multi-phase VRMs
175 °C channel rating	Supports sustained operation in sealed enclosures or high-ambient industrial environments

Applications

Server VRM Phase Legs	Industrial Motor Drive Inverters
Use Scenario: High-current, high-frequency synchronous buck stages in 48 V input server power supplies. IC Role / Device Role / Timing Role: Low-side power switch in multiphase buck converter delivering up to 200 A per rail. Use Value: 4.1 mΩ R_DS(ON) and 11 nC Q_SW reduce conduction + switching losses, enabling >95% efficiency at 1 MHz.	Use Scenario: Half-bridge legs in 24–48 V BLDC motor drives for factory automation equipment. IC Role / Device Role / Timing Role: High-speed switching element in inverter output stage with isolated gate drive. Use Value: TO-220SIS isolation enables direct heatsink mounting without insulation, simplifying mechanical design and improving thermal stability.
Telecom DC-DC Modules	Renewable Energy Charge Controllers
Use Scenario: Isolated forward or active-clamp forward converters in 48 V telecom rectifiers. IC Role / Device Role / Timing Role: Primary-side switch handling 60 V bus transients and repetitive avalanche stress. Use Value: 29 mJ single-pulse avalanche energy rating ensures reliability during line surge events without snubber circuits.	Use Scenario: MPPT-based solar charge controllers converting 30–60 V PV input to 12/24/48 V battery banks. IC Role / Device Role / Timing Role: Main switching transistor in synchronous buck topology operating at variable duty cycle. Use Value: Low Q_oss (32 nC) and fast t_off (35 ns) maintain high efficiency across wide input voltage and load ranges.

Server VRM Phase Legs

Industrial Motor Drive Inverters

Use Scenario: High-current, high-frequency synchronous buck stages in 48 V input server power supplies.

IC Role / Device Role / Timing Role: Low-side power switch in multiphase buck converter delivering up to 200 A per rail.

Use Value: 4.1 mΩ R_DS(ON) and 11 nC Q_SW reduce conduction + switching losses, enabling >95% efficiency at 1 MHz.

Use Scenario: Half-bridge legs in 24–48 V BLDC motor drives for factory automation equipment.

IC Role / Device Role / Timing Role: High-speed switching element in inverter output stage with isolated gate drive.

Use Value: TO-220SIS isolation enables direct heatsink mounting without insulation, simplifying mechanical design and improving thermal stability.

Telecom DC-DC Modules

Renewable Energy Charge Controllers

Use Scenario: Isolated forward or active-clamp forward converters in 48 V telecom rectifiers.

IC Role / Device Role / Timing Role: Primary-side switch handling 60 V bus transients and repetitive avalanche stress.

Use Value: 29 mJ single-pulse avalanche energy rating ensures reliability during line surge events without snubber circuits.

Use Scenario: MPPT-based solar charge controllers converting 30–60 V PV input to 12/24/48 V battery banks.

IC Role / Device Role / Timing Role: Main switching transistor in synchronous buck topology operating at variable duty cycle.

Use Value: Low Q_oss (32 nC) and fast t_off (35 ns) maintain high efficiency across wide input voltage and load ranges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60NF06L	R_DS(ON) = 5.5 mΩ (V_GS = 10 V); Q_g = 45 nC; non-isolated TO-220	Lacks source isolation; requires insulating hardware for high-side use	Preferred where cost sensitivity outweighs thermal/mechanical integration benefits of TO-220SIS
IRFZ44NPBF	R_DS(ON) = 28 mΩ (V_GS = 10 V); Q_SW = 35 nC; lower voltage (55 V)	Higher conduction loss limits use to ≤30 A continuous; unsuitable for 48 V bus systems	Suitable only for low-power 12–24 V motor control or lighting where R_DS(ON) margin is acceptable

Compared with STP60NF06L and IRFZ44NPBF, TK5R3A06PL,S4X provides superior R_DS(ON) × Q_g trade-off, reinforced isolation for high-side layouts, and higher avalanche ruggedness-making it optimal for space-constrained, high-efficiency 48 V industrial and telecom power designs.

Availability

TK5R3A06PL,S4X is available at Aetrix Electronics and suitable for high-efficiency DC-DC converters, switching voltage regulators, and motor drivers requiring stable component supply and long-term industrial lifecycle support.

Supply support for TK5R3A06PL,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with focus on energy efficiency and reliability.

The TK5R3A06PL,S4X belongs to Toshiba's U-MOS-H series of high-performance N-channel MOSFETs, engineered specifically for high-frequency, high-current power conversion in industrial, telecom, and computing infrastructure.

FAQ

What is the maximum continuous drain current rating for TK5R3A06PL,S4X at 100 °C case temperature?

The TK5R3A06PL,S4X datasheet specifies I_D = 56 A at T_c = 25 °C. At T_c = 100 °C, derating applies: using R_th(ch-c) = 4.16 °C/W and T_ch(max) = 175 °C, the allowable I_D drops to approximately 38 A (based on constant R_DS(ON) and thermal equilibrium). Always verify with actual board-level thermal simulation before final design.

Does TK5R3A06PL,S4X support logic-level gate drive at 3.3 V?

Yes, TK5R3A06PL,S4X has a gate threshold voltage range of 1.5–2.5 V (V_DS = 10 V, I_D = 0.3 mA), ensuring turn-on with 3.3 V logic. However, full enhancement (low R_DS(ON)) requires ≥4.5 V: R_DS(ON) = 5.3 mΩ (max) at V_GS = 4.5 V, ID = 14 A. For minimal conduction loss, 10 V drive is recommended.

What is the significance of the "SIS" suffix in TO-220SIS for TK5R3A06PL,S4X?

The "SIS" in TO-220SIS stands for "Source-Isolated, Sink-capable." It denotes that the source terminal is electrically isolated from the metal tab (drain-connected), enabling direct mounting to a grounded heatsink without shorting the source node. This eliminates insulating hardware and improves thermal resistance in high-side or floating-switch applications of TK5R3A06PL,S4X.

Can TK5R3A06PL,S4X be used in avalanche mode, and what is its rated single-pulse energy?

Yes, TK5R3A06PL,S4X is rated for single-pulse avalanche operation with E_AS = 29 mJ (t = 100 µs, V_DD = 48 V, T_ch = 25 °C). This capability supports robustness against inductive switching transients in motor drives and flyback converters. Repeated avalanche stress is not guaranteed and must be evaluated per Toshiba's reliability guidelines.

How does the body diode performance of TK5R3A06PL,S4X compare to standard recovery diodes?

The intrinsic body diode of TK5R3A06PL,S4X has t_rr = 38 ns and Q_rr = 40 nC (I_DR = 14 A, -dI_DR/dt = 100 A/µs), significantly faster than general-purpose rectifiers. This enables efficient synchronous rectification and reduces reverse-recovery losses in hard-switched topologies-critical for maintaining high efficiency in TK5R3A06PL,S4X-based DC-DC converters.

TK5R3A06PL,S4X Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 56A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.3mOhm @ 28A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 300µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2380 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 36W (Tc)

Operating Temperature:: 175°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220SIS

TK5R3A06PL,S4X FAQ

1.How can I place an order for TK5R3A06PL,S4X through Aetrix?

Please submit a Request for Quotation (RFQ) for TK5R3A06PL,S4X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK5R3A06PL,S4X reliable?

The price and inventory of TK5R3A06PL,S4X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK5R3A06PL,S4X is usually 5 days.

3.What payment methods are accepted for TK5R3A06PL,S4X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK5R3A06PL,S4X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK5R3A06PL,S4X?

TK5R3A06PL,S4X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK5R3A06PL,S4X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK5R3A06PL,S4X?

For technical support, including TK5R3A06PL,S4X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK5R3A06PL,S4X requirements.

6.How does Aetrix verify that TK5R3A06PL,S4X is sourced from the original manufacturer or authorized distributors?

All TK5R3A06PL,S4X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK5R3A06PL,S4X meets industry standards.

7.What is the process for return or replacement of TK5R3A06PL,S4X?

All TK5R3A06PL,S4X units undergo pre-shipment inspection (PSI). If there is an issue with TK5R3A06PL,S4X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK5R3A06PL,S4X part is unused and in its original packaging.

Return procedure for TK5R3A06PL,S4X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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