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Toshiba Semiconductor and Storage TK60S10N1L,LXHQ
- Part No.:
- TK60S10N1L,LXHQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
TK60S10N1L,LXHQ.pdf
- Description:
- MOSFET N-CH 100V 60A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,764
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Product details
Overview
TK60S10N1L,LXHQ from Toshiba Electronic Devices & Storage Corporation is an AEC-Q101-qualified silicon N-channel power MOSFET in DPAK+ (2-7M1A) package, designed for high-current switching in automotive and industrial DC-DC converters. It delivers RDS(ON) = 5.14 mΩ (typ.) at VGS = 10 V, supports 60 A DC drain current, and operates up to 100 V VDSS, enabling efficient high-power motor drive stages.
For engineers reviewing the TK60S10N1L,LXHQ datasheet, TK60S10N1L,LXHQ pinout, TK60S10N1L,LXHQ application, or TK60S10N1L,LXHQ equivalent, key selection criteria include its AEC-Q101 qualification, low on-resistance with guaranteed thermal resistance (Rth(ch-c) = 0.83 °C/W), avalanche energy rating (EAS = 187 mJ), and gate threshold voltage range (2.5–3.5 V) for robust 12 V/24 V automotive gate drive compatibility.
Technical Context
This U-MOSⅧ-H process MOSFET uses a trench-gate structure optimized for low conduction loss and fast switching in hard-switched topologies. Its dynamic parameters-Ciss = 4320 pF, Crss = 220 pF, and Qg = 60 nC-support controlled turn-on/turn-off behavior in synchronous rectification and half-bridge configurations.
The device integrates a built-in body diode with trr = 82 ns and Qrr = 107 nC, enabling reliable freewheeling in buck and flyback converters. Its channel temperature limit of 175 °C and guaranteed safe operating area (SOA) up to 60 A at 100 V support continuous operation under transient load conditions common in engine control units and EPS systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Withstands full automotive battery transients (e.g., load dump up to 120 V) without breakdown. |
| RDS(ON) (VGS = 10 V) | 5.14 mΩ (typ.) - Enables <1.5 W conduction loss at 60 A, reducing heatsink requirements in compact motor drivers. |
| ID (DC) | 60 A - Supports high-current phases in 48 V mild-hybrid inverters and HVAC blower modules. |
| EAS | 187 mJ - Absorbs inductive energy during unclamped inductive switching, eliminating need for external snubbers in relay replacement circuits. |
| Vth | 2.5–3.5 V - Compatible with standard 3.3 V/5 V microcontroller GPIOs and automotive logic-level gate drivers. |
| Rth(ch-c) | 0.83 °C/W - Allows direct mounting to PCB copper pour or heatsink for thermal management in space-constrained ECUs. |
| Qg | 60 nC - Enables efficient gate driving with ≤2 W driver power at 100 kHz switching, minimizing driver IC stress. |
Pinout & Package
Package: DPAK+ (Toshiba designation 2-7M1A), surface-mount, thermally enhanced with exposed drain pad for heatsinking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input | Receives gate drive signal; requires low-inductance routing to minimize ringing due to 60 nC total gate charge. |
| 2 (Drain) | High-side switch node | Exposed metal pad - must be soldered to large copper area or heatsink for thermal path; carries full load current. |
| 3 (Source) | Power return / reference | Common source node for gate drive loop; critical for stable switching and EMI control in high-dI/dt applications. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive underhood environments including temperature cycling, humidity, and mechanical shock per JESD22 standards. |
| Low RDS(ON) | 5.14 mΩ typ. at 10 V gate drive enables >97% efficiency in 48 V/60 A DC-DC stages at 100 kHz. |
| Robust avalanche capability | 187 mJ single-pulse rating allows operation in unclamped inductive loads without external protection components. |
| Enhancement-mode Vth | 2.5–3.5 V range ensures reliable turn-on with standard automotive 12 V gate drivers while preventing accidental turn-on from noise. |
| Low leakage IDSS | ≤10 µA at 100 V supports long-term standby operation in always-on vehicle networks (e.g., CAN wake-up circuits). |
Applications
| Automotive Engine Control Unit (ECU) | Industrial Motor Drive Module |
|---|---|
Use Scenario: High-side switching of fuel injector solenoids and ignition coils in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: Power switch controlling precise 1–5 ms current pulses into inductive loads. Use Value: 100 V VDSS and 187 mJ EAS withstand coil flyback energy without clamping diodes, simplifying BOM and improving reliability. | Use Scenario: Half-bridge leg in 3-phase BLDC drives for HVAC compressors and conveyor systems. IC Role / Device Role / Timing Role: Low-side switching element handling continuous 40–60 A RMS current with fast 12 ns rise time. Use Value: 5.14 mΩ RDS(ON) reduces conduction loss by 35% vs. legacy TO-220 MOSFETs, enabling smaller heatsinks and higher power density. |
| 48 V Mild-Hybrid DC-DC Converter | Automotive Lighting Driver (Headlamp) |
Use Scenario: Synchronous rectifier in bidirectional 48 V/12 V DC-DC converter for start-stop and regenerative braking systems. IC Role / Device Role / Timing Role: Secondary-side power switch operating at 200–500 kHz with low Qg and fast tf = 18 ns. Use Value: 60 nC Qg and 220 pF Crss enable clean zero-voltage switching transitions, reducing switching losses by ≥22% over competing devices. | Use Scenario: PWM dimming switch for LED headlamps requiring high-side current regulation and fault protection. IC Role / Device Role / Timing Role: High-current, high-reliability switching element with integrated body diode for reverse polarity protection. Use Value: AEC-Q101 qualification and 175 °C Tch rating ensure stable operation under hood temperatures up to 125 °C ambient with 50 °C margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N10F7 | 100 V, 220 A, RDS(ON) = 3.0 mΩ (VGS = 10 V); DFN8 5×6 mm package; no AEC-Q101 certification. | Higher current rating but larger footprint; unsuitable for AEC-Q101-mandated automotive modules. | Select when board space permits and automotive qualification is not required. |
| IRF1407PBF | 100 V, 75 A, RDS(ON) = 7.5 mΩ (VGS = 10 V); TO-220AB package; AEC-Q101 not claimed. | Through-hole mounting only; higher RDS(ON) increases conduction loss by ~46% at 60 A. | Select for legacy through-hole designs where rework to SMT is impractical. |
Compared with STL220N10F7 and IRF1407PBF, TK60S10N1L,LXHQ uniquely balances AEC-Q101 compliance, DPAK+ thermal performance (0.83 °C/W), and 5.14 mΩ on-resistance in a surface-mount package-making it optimal for new automotive ECU and 48 V system designs requiring qualification, compactness, and efficiency.
Availability
TK60S10N1L,LXHQ is available at Aetrix Electronics and suitable for automotive engine control units, industrial motor drivers, and 48 V mild-hybrid DC-DC converters requiring stable component supply across multi-year production cycles.
Supply support for TK60S10N1L,LXHQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with focus on automotive, industrial, and consumer applications.
The TK60S10N1L,LXHQ belongs to Toshiba's U-MOSⅧ-H automotive-qualified MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in harsh-environment power conversion systems.
FAQ
What is the maximum continuous drain current rating for TK60S10N1L,LXHQ?
The TK60S10N1L,LXHQ is rated for 60 A DC drain current at Tc = 25 °C. Derating applies above 25 °C case temperature per the SOA curve; at 100 °C Tc, maximum continuous current drops to approximately 32 A. This rating assumes proper PCB copper area and thermal interface to maintain channel temperature ≤175 °C.
Is TK60S10N1L,LXHQ qualified to AEC-Q101 standards?
Yes, TK60S10N1L,LXHQ is explicitly AEC-Q101 qualified per the official Toshiba datasheet Rev. 4.0.A. This includes stress testing for temperature cycling, humidity, high-temperature operating life, and ESD (HBM ≥2 kV), confirming suitability for automotive underhood applications such as engine control and ADAS power stages.
What is the gate threshold voltage range for TK60S10N1L,LXHQ?
The gate threshold voltage (Vth) for TK60S10N1L,LXHQ is specified as 2.5–3.5 V at VDS = 10 V and ID = 0.5 mA. This range ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers while maintaining noise immunity against spurious gate triggering in electrically noisy automotive environments.
Does TK60S10N1L,LXHQ have an integrated body diode, and what are its characteristics?
Yes, TK60S10N1L,LXHQ includes a monolithic body diode with reverse recovery time (trr) of 82 ns and reverse recovery charge (Qrr) of 107 nC at IDR = 60 A and dI/dt = 50 A/µs. These values support efficient freewheeling in synchronous buck converters and reduce voltage spikes compared to discrete diode solutions.
What package type does TK60S10N1L,LXHQ use, and how is thermal management implemented?
TK60S10N1L,LXHQ uses the DPAK+ package (Toshiba designation 2-7M1A), featuring an exposed drain pad that serves as the primary thermal path. Thermal resistance from channel to case (Rth(ch-c)) is 0.83 °C/W, requiring direct soldering of the drain pad to ≥200 mm² of 2 oz copper with thermal vias to achieve rated power dissipation of 180 W.
TK60S10N1L,LXHQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- U-MOSVIII-H
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 6.11mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs:
- 60 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4320 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 180W (Tc)
- Operating Temperature:
- 175°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK+
TK60S10N1L,LXHQ FAQ
1.How can I place an order for TK60S10N1L,LXHQ through Aetrix?
Please submit a Request for Quotation (RFQ) for TK60S10N1L,LXHQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK60S10N1L,LXHQ reliable?
The price and inventory of TK60S10N1L,LXHQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK60S10N1L,LXHQ is usually 5 days.
3.What payment methods are accepted for TK60S10N1L,LXHQ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK60S10N1L,LXHQ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK60S10N1L,LXHQ?
TK60S10N1L,LXHQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK60S10N1L,LXHQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK60S10N1L,LXHQ?
For technical support, including TK60S10N1L,LXHQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK60S10N1L,LXHQ requirements.
6.How does Aetrix verify that TK60S10N1L,LXHQ is sourced from the original manufacturer or authorized distributors?
All TK60S10N1L,LXHQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK60S10N1L,LXHQ meets industry standards.
7.What is the process for return or replacement of TK60S10N1L,LXHQ?
All TK60S10N1L,LXHQ units undergo pre-shipment inspection (PSI). If there is an issue with TK60S10N1L,LXHQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK60S10N1L,LXHQ part is unused and in its original packaging.
Return procedure for TK60S10N1L,LXHQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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