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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK62J60W,S1VQ

Name: TK62J60W,S1VQ
Brand: Toshiba Semiconductor and Storage
SKU: TK62J60W,S1VQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK62J60W,S1VQ

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-3P-3, SC-65-3

Datasheet:: TK62J60W,S1VQ.pdf

Description:: MOSFET N-CH 600V 61.8A TO3P

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Product details

Overview

TK62J60W,S1VQ from Toshiba is a silicon N-channel power MOSFET using DTMOS™ super-junction technology, designed for high-voltage switching in offline AC-DC converters and industrial SMPS. It delivers 600 V V_DSS, 61.8 A I_D (DC), R_DS(ON) = 0.033 Ω (typ.), and operates up to 150 °C channel temperature in TO-3P(N) package.

For engineers reviewing the TK62J60W,S1VQ datasheet, TK62J60W,S1VQ pinout, TK62J60W,S1VQ application, or TK62J60W,S1VQ equivalent, key selection criteria include avalanche ruggedness (E_AS = 698 mJ), diode reverse recovery performance (t_rr = 500 ns), gate charge (Q_g = 180 nC), thermal resistance (R_th(ch-c) = 0.313 °C/W), and RoHS-compliant marking per JEITA SC-65.

Technical Context

This MOSFET employs Toshiba's DTMOS™ IV process with super-junction cell structure to achieve low conduction loss while maintaining high voltage blocking capability. Its enhancement-mode operation (V_th = 2.7–3.7 V) ensures reliable turn-on with standard 10 V gate drive, and its optimized gate charge profile supports efficient hard-switching at high frequencies.

The device integrates a fast-recovery body diode (V_DSF = −1.7 V, t_rr = 500 ns, Q_rr = 7 µC) and exhibits robust dv/dt immunity (≥50 V/ns), enabling stable operation in flyback and LLC resonant topologies without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Supports universal-input offline SMPS designs up to 400 V DC bus with margin.
R_DS(ON)	0.033 Ω (typ.) - Reduces conduction loss in high-current primary-side switches; enables >90% efficiency in 300–500 W systems.
I_D (DC)	61.8 A - Sustains continuous load current in high-power adapters and server PSUs without derating at T_c = 25 °C.
E_AS	698 mJ - Withstands single-pulse avalanche energy during inductive turn-off transients in unclamped inductive switching (UIS) conditions.
Q_g	180 nC - Determines gate driver power requirement; compatible with standard 1–2 A peak gate drivers for <500 kHz switching.
R_th(ch-c)	0.313 °C/W - Enables direct heatsink mounting for thermal management in compact industrial power modules.
t_rr	500 ns - Limits diode reverse recovery loss and EMI generation in quasi-resonant and ZVS circuits.

Pinout & Package

TO-3P(N) package (JEITA SC-65, Toshiba 2-16C1S), 3-terminal through-hole metal can with isolated tab. Drain connected to case for direct heatsinking; weight 4.6 g (typ.).

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; requires ≤±30 V gate-source voltage; threshold 2.7–3.7 V enables TTL/CMOS-compatible drive.
2	Drain (Heatsink)	Main high-voltage power terminal; electrically connected to metal case; must be insulated from chassis unless referenced to system ground.
3	Source	Power return path and reference for gate drive; connects to primary-side ground in flyback/forward topologies.

Key Features

Feature	Design Value
DTMOS™ super-junction structure	Enables 600 V rating with ultra-low R_DS(ON) (0.033 Ω), reducing conduction loss by >30% vs. planar MOSFETs at same die size.
Enhancement-mode gate	V_th = 2.7–3.7 V ensures clean turn-on with standard 10 V gate drivers and prevents accidental activation during startup.
Fast body diode	t_rr = 500 ns and Q_rr = 7 µC minimize switching loss and ringing in discontinuous conduction mode (DCM) flyback converters.
Avalanche-rated	Guaranteed E_AS = 698 mJ allows safe operation under unclamped inductive switching-critical for PFC and LLC half-bridge legs.
RoHS-compliant marking	Underlined lot code indicates [[G]]/RoHS COMPATIBLE; meets EU Directive 2011/65/EU without lead or hazardous substances.

Applications

Industrial Switching Power Supplies	Server & Telecom Rectifiers
Use Scenario: Primary-side switch in 500 W–1 kW telecom rectifiers operating from 90–264 V AC input. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer in active-clamp forward topology. Use Value: Low R_DS(ON) and high avalanche energy ensure stable operation under line surges and load transients without derating.	Use Scenario: Main switch in redundant 12 V/54 A server PSUs with active PFC front-end. IC Role / Device Role / Timing Role: Primary-side MOSFET in interleaved PFC stage handling 3.2 kW total output. Use Value: Fast body diode and low Q_g reduce switching losses at 70–100 kHz, improving full-load efficiency by 0.8–1.2%.
High-Voltage DC-DC Converters	Industrial Motor Drive Inverters
Use Scenario: Isolated DC-DC converter (400 V → 24 V) for factory automation control systems. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology. Use Value: Robust dv/dt immunity (>50 V/ns) prevents false triggering during high dV/dt transitions across transformer leakage inductance.	Use Scenario: Brake chopper switch in 3-phase 400 V AC drives for conveyor systems. IC Role / Device Role / Timing Role: Energy-dump switch clamping regenerated motor energy into braking resistor. Use Value: Single-pulse avalanche rating (E_AS = 698 mJ) absorbs repetitive regenerative spikes without degradation over 10+ years MTBF.

Industrial Switching Power Supplies

Server & Telecom Rectifiers

Use Scenario: Primary-side switch in 500 W–1 kW telecom rectifiers operating from 90–264 V AC input.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer in active-clamp forward topology.

Use Value: Low R_DS(ON) and high avalanche energy ensure stable operation under line surges and load transients without derating.

Use Scenario: Main switch in redundant 12 V/54 A server PSUs with active PFC front-end.

IC Role / Device Role / Timing Role: Primary-side MOSFET in interleaved PFC stage handling 3.2 kW total output.

Use Value: Fast body diode and low Q_g reduce switching losses at 70–100 kHz, improving full-load efficiency by 0.8–1.2%.

High-Voltage DC-DC Converters

Industrial Motor Drive Inverters

Use Scenario: Isolated DC-DC converter (400 V → 24 V) for factory automation control systems.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology.

Use Value: Robust dv/dt immunity (>50 V/ns) prevents false triggering during high dV/dt transitions across transformer leakage inductance.

Use Scenario: Brake chopper switch in 3-phase 400 V AC drives for conveyor systems.

IC Role / Device Role / Timing Role: Energy-dump switch clamping regenerated motor energy into braking resistor.

Use Value: Single-pulse avalanche rating (E_AS = 698 mJ) absorbs repetitive regenerative spikes without degradation over 10+ years MTBF.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60DM6	600 V, 62 A, R_DS(ON) = 0.032 Ω, D²PAK package, lower Q_g (145 nC), no guaranteed E_AS.	Suitable for surface-mount designs with space-constrained layouts; lacks avalanche rating for unclamped inductive loads.	Select when PCB area is limited and avalanche stress is mitigated by circuit design (e.g., snubbers).
IXFH60N60X3	600 V, 60 A, R_DS(ON) = 0.034 Ω, TO-247 package, higher E_AS (1000 mJ), higher C_iss (5200 pF).	Better suited for high-reliability industrial inverters requiring extended avalanche endurance; larger gate capacitance increases driver loss.	Select when long-term reliability under repeated UIS events is critical and gate drive capability permits higher C_iss.

Compared with STW62N60DM6 and IXFH60N60X3, TK62J60W,S1VQ offers balanced trade-offs: superior thermal resistance (0.313 °C/W vs. ≥0.45 °C/W), guaranteed avalanche rating, and TO-3P(N) mechanical robustness for high-vibration environments-making it optimal for legacy through-hole industrial power supplies.

Availability

TK62J60W,S1VQ is available at Aetrix Electronics and suitable for industrial switching power supplies, server rectifiers, high-voltage DC-DC converters, and motor drive brake choppers requiring stable component supply and long-lifecycle support.

Supply support for TK62J60W,S1VQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of leadership in high-voltage MOSFET innovation.

The TK62J60W,S1VQ belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered for high-efficiency, high-reliability offline power conversion in industrial, telecom, and computing infrastructure.

FAQ

What is the maximum continuous drain current for TK62J60W,S1VQ at T_c = 25 °C?

The TK62J60W,S1VQ supports 61.8 A DC drain current at case temperature T_c = 25 °C, as specified in its Absolute Maximum Ratings table. This rating assumes proper heatsinking and is derated linearly above 25 °C per the R_th(ch-c) = 0.313 °C/W thermal resistance. At T_c = 100 °C, the usable I_D drops to approximately 35 A.

Does TK62J60W,S1VQ have a guaranteed avalanche energy rating?

Yes, TK62J60W,S1VQ has a guaranteed single-pulse avalanche energy rating of 698 mJ (E_AS) under test conditions of V_DD = 90 V, T_ch = 25 °C (initial), L = 5.08 mH, R_G = 25 Ω, and I_AR = 15.5 A. This rating is validated per JEDEC JESD24-11 and enables reliable operation in unclamped inductive switching scenarios common in PFC and flyback converters.

What is the gate threshold voltage range for TK62J60W,S1VQ?

The gate threshold voltage (V_th) for TK62J60W,S1VQ is specified as 2.7 V to 3.7 V at V_DS = 10 V and I_D = 3.1 mA. This enhancement-mode range ensures predictable turn-on behavior with standard 10 V gate drivers and provides noise margin against spurious triggering in noisy industrial environments.

Is TK62J60W,S1VQ RoHS compliant?

Yes, TK62J60W,S1VQ is RoHS compliant. Per Toshiba's marking specification, an underlined lot number on the device indicates [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]], confirming compliance with EU Directive 2011/65/EU. Full material declarations and test reports are available upon request from Toshiba or authorized distributors.

What package type does TK62J60W,S1VQ use, and what are its mechanical identifiers?

TK62J60W,S1VQ uses the TO-3P(N) package, also designated JEITA SC-65 and Toshiba 2-16C1S. It is a 3-terminal through-hole metal-can package with isolated tab, weighing 4.6 g (typ.). Pin 2 (Drain) is electrically connected to the metal case, which serves as the primary heatsink interface.

TK62J60W,S1VQ Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSIV

Package/Case:: TO-3P-3, SC-65-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 61.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 38mOhm @ 30.9A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 3.1mA

Gate Charge (Qg) (Max) @ Vgs:: 180 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 6500 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 400W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-3P(N)

TK62J60W,S1VQ FAQ

1.How can I place an order for TK62J60W,S1VQ through Aetrix?

Please submit a Request for Quotation (RFQ) for TK62J60W,S1VQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK62J60W,S1VQ reliable?

The price and inventory of TK62J60W,S1VQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK62J60W,S1VQ is usually 5 days.

3.What payment methods are accepted for TK62J60W,S1VQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK62J60W,S1VQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK62J60W,S1VQ?

TK62J60W,S1VQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK62J60W,S1VQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK62J60W,S1VQ?

For technical support, including TK62J60W,S1VQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK62J60W,S1VQ requirements.

6.How does Aetrix verify that TK62J60W,S1VQ is sourced from the original manufacturer or authorized distributors?

All TK62J60W,S1VQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK62J60W,S1VQ meets industry standards.

7.What is the process for return or replacement of TK62J60W,S1VQ?

All TK62J60W,S1VQ units undergo pre-shipment inspection (PSI). If there is an issue with TK62J60W,S1VQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK62J60W,S1VQ part is unused and in its original packaging.

Return procedure for TK62J60W,S1VQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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