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Toshiba Semiconductor and Storage TK62N60W,S1VF
- Part No.:
- TK62N60W,S1VF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
TK62N60W,S1VF.pdf
- Description:
- MOSFET N-CH 600V 61.8A TO247
- Quantity:
- Payment:
- Shipping:
Inventory:8,182
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Product details
Overview
TK62N60W,S1VF from Toshiba is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline power supplies and industrial DC-DC converters. It delivers 600 V VDSS, 61.8 A ID (DC), RDS(ON) = 0.033 Ω (typ.) at VGS = 10 V, and operates with gate threshold voltage Vth = 2.7–3.7 V - enabling robust control in 400–600 V bus applications such as server SMPS and telecom rectifiers.
For engineers reviewing the TK62N60W,S1VF datasheet, TK62N60W,S1VF pinout, TK62N60W,S1VF application, or TK62N60W,S1VF equivalent, key selection criteria include avalanche ruggedness (EAS = 698 mJ), dv/dt immunity (≥50 V/ns), thermal resistance (Rth(ch-c) = 0.313 °C/W), and TO-247 package compatibility with high-power heatsinking requirements.
Technical Context
This device implements Toshiba's DTMOS™ IV super-junction architecture to minimize conduction and switching losses simultaneously. Its optimized charge characteristics - Qg = 180 nC, Qgd = 85 nC - support high-frequency operation up to 100 kHz in hard-switched PFC and LLC resonant topologies.
The integrated body diode exhibits trr = 500 ns and Qrr = 7 µC under specified conditions, enabling reliable operation in discontinuous conduction mode (DCM) flyback and active-clamp forward converters without external snubbing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - supports full-range universal AC input (85–265 VAC) with ≥2× safety margin in offline SMPS designs |
| RDS(ON) | 0.033 Ω (typ.) - reduces conduction loss to <1.5 W at 60 A, critical for >95% efficiency in 1–3 kW power stages |
| ID (DC) | 61.8 A - enables single-device implementation in 1.5 kW continuous-output server PSUs |
| EAS | 698 mJ - withstands single-pulse inductive energy in 400 V bus systems without clamping circuitry |
| dv/dt immunity | ≥50 V/ns - prevents false turn-on during fast transient events in high-noise motor drive inverters |
| Rth(ch-c) | 0.313 °C/W - allows direct mounting to heatsink with ≤45 °C temperature rise at 400 W dissipation |
| Qg | 180 nC - determines gate driver current requirement (~1.8 A peak for 100 ns switching) |
Pinout & Package
TK62N60W,S1VF is housed in a TO-247 (JEITA SC-65 / Toshiba 2-16L1A) package with isolated metal tab (Drain-connected heatsink surface) and 3-terminal configuration rated for 0.8 N·m mounting torque.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | High-impedance MOS control node requiring low-inductance gate loop layout to suppress oscillation |
| 2 | Drain (Heatsink) | High-voltage power terminal electrically connected to case; must be isolated from chassis unless referenced to HV rail |
| 3 | Source | Power return path and reference for gate drive; forms common-source switching node with low parasitic inductance |
Key Features
| Feature | Design Value |
|---|---|
| Super-junction DTMOS™ IV structure | Enables simultaneous optimization of RDS(ON) × Qg figure-of-merit for high-efficiency, high-frequency operation |
| Enhancement-mode gate | Vth = 2.7–3.7 V ensures reliable turn-off at 0 V gate bias and compatibility with standard 12 V or 15 V gate drivers |
| Low Crss (20 pF) | Minimizes Miller-induced voltage spikes and improves noise immunity during high-dv/dt commutation |
| Integrated body diode with soft recovery | trr = 500 ns and low Qrr reduce switching loss and EMI in bridge-leg configurations |
| Avalanche-rated design | Guaranteed single-pulse EAS = 698 mJ eliminates need for external RCD clamp in flyback or forward converters |
Applications
| Server Power Supply | Industrial Motor Drive Inverter |
|---|---|
Use Scenario: Primary-side switching in 1.8 kW 80 PLUS Titanium-certified AC-DC front-end with active PFC + LLC resonant stage. IC Role / Device Role / Timing Role: High-side main switch in interleaved boost PFC and synchronous rectifier control in LLC half-bridge. Use Value: Low RDS(ON) and high EAS enable stable operation across line/load transients without derating. |
Use Scenario: Phase-leg switching in 7.5 kW variable-frequency drive for HVAC compressors. IC Role / Device Role / Timing Role: IGBT replacement in 600 V three-phase inverter bridge operating at 8 kHz PWM frequency. Use Value: Superior dv/dt immunity (>50 V/ns) prevents spurious turn-on during fast bus transients in noisy industrial environments. |
| Telecom Rectifier Module | EV Onboard Charger (OBC) PFC Stage |
Use Scenario: 48 V/50 A output telecom rectifier with universal AC input and digital control. IC Role / Device Role / Timing Role: Main switch in continuous conduction mode (CCM) boost converter operating at 100 kHz. Use Value: Optimized Qg/Qgd ratio enables efficient zero-voltage switching (ZVS) transition with minimal dead-time penalty. |
Use Scenario: Boost PFC stage in 6.6 kW bidirectional OBC supporting 200–450 V battery range. IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in interleaved two-phase boost converter. Use Value: Rth(ch-c) = 0.313 °C/W allows direct heatsink mounting without thermal interface pads, simplifying mechanical design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW62N60M2 | RDS(ON) = 0.035 Ω (typ.), Qg = 170 nC, TO-247 package, no guaranteed EAS rating | Lacks specified avalanche energy rating; requires external clamping in inductive load circuits | Preferred where gate drive loss minimization is prioritized over ruggedness assurance |
| IPP60R040C7 | RDS(ON) = 0.040 Ω (typ.), Qg = 132 nC, TO-247, 650 V rating, CoolMOS™ C7 technology | Lower Qg enables faster switching but higher conduction loss at >40 A; optimized for >200 kHz operation | Better suited for high-frequency resonant topologies where switching loss dominates |
Compared with STW62N60M2 and IPP60R040C7, the TK62N60W,S1VF offers superior avalanche ruggedness and lower RDS(ON) at high current, making it optimal for hard-switched 50–100 kHz industrial power stages where reliability under overload is critical.
Availability
TK62N60W,S1VF is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, telecom rectifiers, and EV onboard charger PFC stages requiring stable component supply and long-term industrial lifecycle support.
Supply support for TK62N60W,S1VF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with decades of expertise in high-reliability discrete components.
The TK62N60W,S1VF belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in industrial and computing power conversion systems.
FAQ
What is the maximum continuous drain current for TK62N60W,S1VF at Tc = 25 °C?
The TK62N60W,S1VF supports ID = 61.8 A (DC) when case temperature is maintained at 25 °C, as specified in its Absolute Maximum Ratings table. Derating is required above this temperature per the Rth(ch-c) = 0.313 °C/W thermal resistance curve - for example, at Tc = 100 °C, the usable ID drops to approximately 35 A to keep channel temperature ≤150 °C.
Does TK62N60W,S1VF have a fully characterized body diode for synchronous rectification?
The TK62N60W,S1VF includes an integrated body diode with documented reverse recovery parameters: trr = 500 ns (typ.), Qrr = 7 µC (typ.), and Irr = 25 A (typ.) under specified test conditions. While not optimized for synchronous rectification like dedicated SR FETs, these values support reliable operation in quasi-resonant and DCM flyback topologies without external diodes.
Is TK62N60W,S1VF RoHS compliant and lead-free?
Yes, TK62N60W,S1VF is RoHS compliant and lead-free. Per Toshiba's marking note, underlined lot numbers indicate [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] status. The device meets Directive 2011/65/EU requirements, and environmental compliance documentation is available through authorized Toshiba sales representatives.
What gate voltage range ensures safe and reliable operation of TK62N60W,S1VF?
The TK62N60W,S1VF is rated for VGS = ±30 V maximum, with enhancement-mode threshold Vth = 2.7–3.7 V (VDS = 10 V, ID = 3.1 mA). For robust turn-on, VGS ≥ 10 V is recommended to achieve RDS(ON) = 0.033 Ω (typ.). Gate drive must avoid undershoot below –5 V or overshoot beyond +20 V to prevent gate oxide stress or unintended conduction.
Can TK62N60W,S1VF replace older DTMOS II or III variants in existing designs?
TK62N60W,S1VF is a DTMOS™ IV generation device with improved RDS(ON) × Qg FoM versus DTMOS II/III. Pinout and package are identical (TO-247), and Vth and VDSS remain consistent. However, due to lower Crss and higher dv/dt immunity, layout review is advised - especially gate loop inductance - to avoid oscillation in legacy designs originally tuned for higher Miller capacitance.
TK62N60W,S1VF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- DTMOSIV
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 61.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 40mOhm @ 30.9A, 10V
- Vgs(th) (Max) @ Id:
- 3.7V @ 3.1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 180 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6500 pF @ 300 V
- FET Feature:
- -
- Power Dissipation (Max):
- 400W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247
TK62N60W,S1VF FAQ
1.How can I place an order for TK62N60W,S1VF through Aetrix?
Please submit a Request for Quotation (RFQ) for TK62N60W,S1VF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK62N60W,S1VF reliable?
The price and inventory of TK62N60W,S1VF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK62N60W,S1VF is usually 5 days.
3.What payment methods are accepted for TK62N60W,S1VF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK62N60W,S1VF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK62N60W,S1VF?
TK62N60W,S1VF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK62N60W,S1VF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK62N60W,S1VF?
For technical support, including TK62N60W,S1VF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK62N60W,S1VF requirements.
6.How does Aetrix verify that TK62N60W,S1VF is sourced from the original manufacturer or authorized distributors?
All TK62N60W,S1VF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK62N60W,S1VF meets industry standards.
7.What is the process for return or replacement of TK62N60W,S1VF?
All TK62N60W,S1VF units undergo pre-shipment inspection (PSI). If there is an issue with TK62N60W,S1VF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK62N60W,S1VF part is unused and in its original packaging.
Return procedure for TK62N60W,S1VF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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