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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK65A10N1,S4X

Name: TK65A10N1,S4X
Brand: Toshiba Semiconductor and Storage
SKU: TK65A10N1,S4X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK65A10N1,S4X

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: TK65A10N1,S4X.pdf

Description:: MOSFET N-CH 100V 65A TO220SIS

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Product details

Overview

TK65A10N1,S4X from Toshiba Electronics is a silicon N-channel power MOSFET in U-MOSⅧ-H process, designed as a high-current switching element in DC-DC converters and motor drives. It delivers 100 V V_DSS, 4.0 mΩ R_DS(ON) (typ. at V_GS = 10 V), 148 A continuous drain current (T_C = 25 °C), and operates with gate threshold voltage of 2.0–4.0 V - enabling robust control in industrial switching regulators.

For engineers reviewing the TK65A10N1,S4X datasheet, TK65A10N1,S4X pinout, TK65A10N1,S4X application, or TK65A10N1,S4X equivalent, key selection criteria include its low on-resistance for reduced conduction loss, avalanche energy rating of 143 mJ, TO-220SIS package thermal performance (R_th(ch-c) = 2.77 °C/W), and verified suitability in high-efficiency 48 V input power stages.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate structure to achieve optimized cell density and reduced specific on-resistance. Its enhancement-mode operation with tightly controlled V_th (2.0–4.0 V) ensures reliable turn-on under standard 10 V gate drive while maintaining low IDSS (<10 µA at 100 V).

The device integrates an intrinsic body diode with t_rr = 76 ns (typ.) and Q_rr = 150 nC (typ.), supporting synchronous rectification and hard-switched topologies. Its guaranteed single-pulse avalanche capability (E_AS = 143 mJ) enables ruggedness in inductive load switching without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - supports 48 V bus designs with ≥2× voltage margin against transients.
R_DS(ON)	4.0 mΩ (typ. at V_GS = 10 V) - reduces conduction loss to <0.85 W at 148 A, critical for high-current output stages.
I_D (DC)	148 A (T_C = 25 °C) - enables single-device use in >1 kW power supplies without paralleling.
E_AS	143 mJ - withstands inductive energy dump in motor gate drivers or buck converter freewheeling phases.
C_iss	5400 pF (V_DS = 50 V) - balances switching speed and gate drive strength requirements for 100–500 kHz operation.
Q_g	81 nC (V_DD ≈ 80 V, I_D = 65 A) - determines required gate driver peak current for <100 ns turn-on in high-frequency SMPS.
R_th(ch-c)	2.77 °C/W - allows direct heatsink mounting to sustain full current with ≤40 °C temperature rise above case.

Pinout & Package

Package: TO-220SIS (JEITA SC-67, Toshiba 2-10U1S), isolated drain tab, 3-pin through-hole, 1.7 g typical weight. Thermal path optimized via metal tab directly connected to drain.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives 10 V logic-level drive; requires <81 nC charge for full enhancement; ESD-sensitive (handle per JESD22-A114).
2 (Drain)	High-side power terminal	Connected to heatsink via isolated metal tab; carries full load current and withstands 100 V blocking; primary thermal path.
3 (Source)	Reference/return terminal	Serves as local ground reference for gate drive; connects to PCB ground plane; source inductance must be minimized for fast switching.

Key Features

Feature	Design Value
Ultra-low R_DS(ON)	4.0 mΩ typ. at 10 V drive enables >97% efficiency in 12 V–48 V output stages at 100 A.
High avalanche energy rating	143 mJ single-pulse rating eliminates need for external clamping in 200 W–1 kW inductive switchers.
Fast body diode recovery	76 ns t_rr and 150 nC Q_rr reduce reverse recovery loss and EMI in synchronous buck and half-bridge configurations.
Thermally enhanced package	TO-220SIS isolates drain from PCB while delivering 2.77 °C/W channel-to-case resistance for compact heatsink integration.
Robust gate oxide	V_GSS = ±20 V rating and <0.1 µA I_GSS support stable 12 V gate drive with minimal leakage-induced drift.

Applications

Server VRM	Industrial Motor Drive
Use Scenario: High-density 48 V input buck converter supplying CPU core voltage (0.8–1.2 V) at up to 200 A. IC Role / Device Role / Timing Role: Primary high-side synchronous rectifier MOSFET in multiphase topology. Use Value: 4.0 mΩ R_DS(ON) cuts conduction loss by 35% vs. legacy 6.5 mΩ devices, reducing thermal load on VRM heatsinks.	Use Scenario: Inverter leg in 3 kW BLDC motor controller operating from 400 V DC bus. IC Role / Device Role / Timing Role: Low-side switching element handling continuous 148 A phase current with PWM switching at 10–20 kHz. Use Value: 143 mJ E_AS rating prevents failure during motor stall or short-circuit events without added protection circuitry.
Telecom PSU	EV Onboard Charger
Use Scenario: Secondary-side synchronous rectifier in 3.3 kW telecom rectifier (54 V input, 12 V output). IC Role / Device Role / Timing Role: Output rectifier MOSFET in LLC resonant converter with ZVS operation. Use Value: 5400 pF C_iss and 81 nC Q_g enable clean zero-voltage switching at 300 kHz, minimizing switching loss and EMI.	Use Scenario: DC-link switching stage in bidirectional OBC handling 6.6 kW AC/DC + DC/AC conversion. IC Role / Device Role / Timing Role: High-current switching device in dual-active-bridge (DAB) topology with soft-switching control. Use Value: TO-220SIS package provides isolation and thermal reliability for sustained 100 A operation in automotive under-hood environments.

Server VRM

Industrial Motor Drive

Use Scenario: High-density 48 V input buck converter supplying CPU core voltage (0.8–1.2 V) at up to 200 A.

IC Role / Device Role / Timing Role: Primary high-side synchronous rectifier MOSFET in multiphase topology.

Use Value: 4.0 mΩ R_DS(ON) cuts conduction loss by 35% vs. legacy 6.5 mΩ devices, reducing thermal load on VRM heatsinks.

Use Scenario: Inverter leg in 3 kW BLDC motor controller operating from 400 V DC bus.

IC Role / Device Role / Timing Role: Low-side switching element handling continuous 148 A phase current with PWM switching at 10–20 kHz.

Use Value: 143 mJ E_AS rating prevents failure during motor stall or short-circuit events without added protection circuitry.

Telecom PSU

EV Onboard Charger

Use Scenario: Secondary-side synchronous rectifier in 3.3 kW telecom rectifier (54 V input, 12 V output).

IC Role / Device Role / Timing Role: Output rectifier MOSFET in LLC resonant converter with ZVS operation.

Use Value: 5400 pF C_iss and 81 nC Q_g enable clean zero-voltage switching at 300 kHz, minimizing switching loss and EMI.

Use Scenario: DC-link switching stage in bidirectional OBC handling 6.6 kW AC/DC + DC/AC conversion.

IC Role / Device Role / Timing Role: High-current switching device in dual-active-bridge (DAB) topology with soft-switching control.

Use Value: TO-220SIS package provides isolation and thermal reliability for sustained 100 A operation in automotive under-hood environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP150NF10	R_DS(ON) = 7.5 mΩ (higher), I_D = 150 A, TO-220FP package (non-isolated drain)	Limited to non-isolated heatsink mounting; higher conduction loss increases thermal design complexity.	Choose only if board layout prohibits isolated-drain mounting and system efficiency >95% is not required.
IXTH120N10L2	R_DS(ON) = 4.2 mΩ, I_D = 120 A, TO-247AC package, lower Q_g (62 nC)	Higher voltage rating (120 V) but lower current rating; larger footprint and higher cost per amp.	Prefer when 120 V blocking is mandatory or when gate drive strength is constrained below 2 A peak.

Compared with STP150NF10 and IXTH120N10L2, the TK65A10N1,S4X uniquely combines 4.0 mΩ on-resistance, 148 A current rating, and TO-220SIS isolation in a cost-effective through-hole package - making it optimal for space-constrained, high-efficiency industrial power supplies where thermal management and layout simplicity are prioritized.

Availability

TK65A10N1,S4X is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom PSUs, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for TK65A10N1,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with over 50 years of power MOSFET innovation.

The TK65A10N1,S4X belongs to Toshiba's U-MOSⅧ-H high-efficiency power MOSFET family, engineered specifically for high-current, high-frequency switching applications in industrial and computing power systems.

FAQ

What is the maximum continuous drain current rating for TK65A10N1,S4X?

The TK65A10N1,S4X is rated for 148 A continuous drain current at T_C = 25 °C. This rating assumes proper heatsinking and derating applies above 25 °C case temperature - for example, at T_C = 100 °C, the usable current drops to approximately 65 A per the Safe Operating Area curve (Fig. 8.13). The TK65A10N1,S4X datasheet specifies this limit based on silicon capability, not package alone.

Does TK65A10N1,S4X support 5 V gate drive?

No, the TK65A10N1,S4X is not specified for reliable enhancement with 5 V gate drive. Its gate threshold voltage range is 2.0–4.0 V, but R_DS(ON) is only guaranteed at V_GS = 10 V (4.0 mΩ typ.). At 5 V, R_DS(ON) rises significantly - typically >12 mΩ - increasing conduction loss and thermal stress. The TK65A10N1,S4X requires 10 V nominal gate drive for full performance.

Is TK65A10N1,S4X RoHS compliant?

Yes, the TK65A10N1,S4X is RoHS compliant per EU Directive 2011/65/EU. Marking indicates [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]], depending on production lot. Environmental compliance details, including lead-free status and substance declarations, are available from Toshiba sales representatives - the TK65A10N1,S4X meets all applicable RoHS restrictions on hazardous substances.

What is the safe operating area (SOA) limitation for TK65A10N1,S4X at 100 V V_DS?

At V_DS = 100 V, the TK65A10N1,S4X SOA limits continuous DC current to ≤10 A (T_C = 25 °C), as shown in Fig. 8.13. This restriction arises from second breakdown and thermal runaway constraints - pulse operation allows higher currents (e.g., 65 A for t ≤ 10 ms), but DC operation at full V_DSS must respect this boundary. The TK65A10N1,S4X must never be operated beyond its SOA envelope without derating.

Can TK65A10N1,S4X replace older TK65A10N in existing designs?

Yes, the TK65A10N1,S4X is a direct replacement for TK65A10N with identical pinout, package (TO-220SIS), and electrical specifications - including same V_DSS, R_DS(ON), and thermal resistance. Key improvements include updated U-MOSⅧ-H process yielding tighter V_th distribution and enhanced avalanche ruggedness (E_AS increased to 143 mJ). No PCB or firmware changes are needed when upgrading from TK65A10N to TK65A10N1,S4X.

TK65A10N1,S4X Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSVIII-H

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 65A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.8mOhm @ 32.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 81 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5400 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220SIS

TK65A10N1,S4X FAQ

1.How can I place an order for TK65A10N1,S4X through Aetrix?

Please submit a Request for Quotation (RFQ) for TK65A10N1,S4X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK65A10N1,S4X reliable?

The price and inventory of TK65A10N1,S4X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK65A10N1,S4X is usually 5 days.

3.What payment methods are accepted for TK65A10N1,S4X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK65A10N1,S4X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK65A10N1,S4X?

TK65A10N1,S4X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK65A10N1,S4X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK65A10N1,S4X?

For technical support, including TK65A10N1,S4X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK65A10N1,S4X requirements.

6.How does Aetrix verify that TK65A10N1,S4X is sourced from the original manufacturer or authorized distributors?

All TK65A10N1,S4X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK65A10N1,S4X meets industry standards.

7.What is the process for return or replacement of TK65A10N1,S4X?

All TK65A10N1,S4X units undergo pre-shipment inspection (PSI). If there is an issue with TK65A10N1,S4X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK65A10N1,S4X part is unused and in its original packaging.

Return procedure for TK65A10N1,S4X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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