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Toshiba Semiconductor and Storage TK65E10N1,S1X
- Part No.:
- TK65E10N1,S1X
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
TK65E10N1,S1X.pdf
- Description:
- MOSFET N CH 100V 148A TO220
- Quantity:
- Payment:
- Shipping:
Inventory:1,061
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Product details
Overview
TK65E10N1,S1X from Toshiba is a silicon N-channel U-MOSⅧ-H power MOSFET designed for high-current, high-efficiency switching in DC-DC converters and motor drives. It delivers 148 A DC drain current at Tc = 25°C, 4.0 mΩ typ. RDS(ON) at VGS = 10 V, and 100 V VDSS, operating reliably in industrial switching voltage regulators.
For engineers reviewing the TK65E10N1,S1X datasheet, TK65E10N1,S1X pinout, TK65E10N1,S1X application, or TK65E10N1,S1X equivalent, key selection criteria include its low on-resistance, avalanche energy rating (143 mJ), TO-220 package thermal performance (Rth(ch-c) = 0.65°C/W), and gate threshold range (2.0–4.0 V) for robust drive compatibility.
Technical Context
This device uses Toshiba's U-MOSⅧ-H trench-gate process to achieve ultra-low RDS(ON) while maintaining high avalanche ruggedness and fast switching (ton = 44 ns, toff = 85 ns). Its enhancement-mode operation with Vth = 2.0–4.0 V ensures reliable turn-on with standard 10 V gate drivers.
The integrated body diode supports synchronous rectification and freewheeling in buck converters, with measured VDSF = −1.2 V at IDR = 65 A and trr = 76 ns. Thermal design is enabled by direct heatsink mounting via the drain-connected tab (Pin 2), supporting continuous operation up to Tch = 150°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Maximum blocking voltage for 48 V input systems with 2× safety margin |
| RDS(ON) (typ.) | 4.0 mΩ at VGS = 10 V - Enables <1 W conduction loss at 50 A, critical for high-efficiency VRMs |
| ID (DC) | 148 A at Tc = 25°C - Supports high-power server/industrial PSU designs with minimal parallel devices |
| EAS | 143 mJ - Withstands single-pulse inductive energy without failure in hard-switched topologies |
| Qg | 81 nC - Optimized for 100–500 kHz operation with moderate gate driver strength requirements |
| Rth(ch-c) | 0.65°C/W - Allows >190 W dissipation with 100°C temperature rise to heatsink |
| Vth | 2.0–4.0 V - Ensures clean turn-on with standard logic-level or PWM controller outputs |
Pinout & Package
TO-220 package (Toshiba designation: 2-10X1A), 3-pin through-hole, 1.93 g typical weight. Drain connected to metal tab for direct heatsinking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control terminal requiring ≤81 nC charge; sensitive to ESD - must be protected per JEDEC JS-001 |
| 2 | Drain (heatsink) | Main high-side current path and thermal interface; electrically tied to case - isolation required if mounted to grounded heatsink |
| 3 | Source | Reference node for gate drive and current sensing; connects to low-side switch or ground return path |
Key Features
| Feature | Design Value |
|---|---|
| U-MOSⅧ-H trench structure | Reduces RDS(ON) × Qg figure-of-merit by 35% vs. prior U-MOS generations, improving efficiency at 250–500 kHz |
| Guaranteed avalanche capability | 143 mJ single-pulse rating enables robust operation in non-zero-voltage-switching circuits without snubbers |
| Low gate leakage (±0.1 µA max) | Minimizes standby power loss in always-on control stages and improves long-term reliability under bias stress |
| Enhancement-mode threshold | 2.0–4.0 V window ensures immunity to noise-induced turn-on while remaining compatible with 3.3 V and 5 V logic |
| Integrated body diode | 76 ns reverse recovery time and 150 nC Qrr support synchronous rectification in buck converters up to 300 kHz |
Applications
| Server VRM | Industrial Motor Drive |
|---|---|
|
Use Scenario: High-density 48 V-to-12 V/1 V point-of-load converter in AI accelerator servers. IC Role / Device Role / Timing Role: Primary high-side synchronous rectifier MOSFET in multiphase buck topology. Use Value: 4.0 mΩ RDS(ON) reduces conduction loss by >40% vs. legacy 6.5 mΩ parts, enabling 95%+ efficiency at 100 A per phase. |
Use Scenario: Inverter leg switch in 3 kW HVAC compressor drive. IC Role / Device Role / Timing Role: Low-side switching element handling 65 A RMS motor current with 100 V bus. Use Value: 143 mJ EAS withstands inductive kickback during fault conditions, eliminating need for external clamping diodes. |
| Telecom PSU | EV Onboard Charger |
|
Use Scenario: Primary-side switch in 3 kW telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: Main power switch operating at 200 kHz with 100 V DC link. Use Value: 81 nC Qg allows efficient drive with low-cost 2 A gate drivers, reducing BOM cost vs. high-Qg alternatives. |
Use Scenario: Secondary-side synchronous rectifier in 6.6 kW AC/DC stage of OBC. IC Role / Device Role / Timing Role: Output rectifier conducting 65 A DC with forced-air cooling. Use Value: Rth(ch-c) = 0.65°C/W enables 192 W power dissipation at ΔT = 125°C, supporting compact heatsink design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP150N10F7 | RDS(ON) = 3.8 mΩ (typ.), Qg = 92 nC, TO-220FP package (isolated tab) | Lower RDS(ON) but higher gate charge increases switching loss above 250 kHz | Prefer when minimizing conduction loss dominates; avoid if gate drive strength is limited |
| IRF1407PBF | RDS(ON) = 7.5 mΩ (typ.), EAS = 100 mJ, same TO-220 footprint | Higher on-resistance increases conduction loss by ~90% at 50 A; lower avalanche rating limits fault tolerance | Select only for cost-sensitive, low-frequency (<100 kHz), non-critical applications where ruggedness is secondary |
Compared with STP150N10F7 and IRF1407PBF, the TK65E10N1,S1X offers superior balance of low RDS(ON), moderate Qg, and high EAS, making it optimal for high-efficiency, high-reliability 100–500 kHz switching applications where thermal management and fault survival are critical.
Availability
TK65E10N1,S1X is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, and telecom power supplies requiring stable component supply, long-lifecycle support, and traceable sourcing.
Supply support for TK65E10N1,S1X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with over 50 years of power MOSFET innovation.
The TK65E10N1,S1X belongs to Toshiba's U-MOSⅧ-H series, engineered specifically for high-current, high-frequency DC-DC conversion in datacenter, industrial, and automotive auxiliary power systems.
FAQ
What is the maximum continuous drain current rating for TK65E10N1,S1X?
The TK65E10N1,S1X is rated for 148 A DC drain current at case temperature Tc = 25°C. This rating assumes proper heatsinking and derates to 65 A at Tc = 100°C per the Safe Operating Area curve. The package limit is 100 A, so actual design current must respect both silicon and mechanical constraints. Always verify thermal design using Rth(ch-c) = 0.65°C/W.
Does TK65E10N1,S1X support avalanche operation, and what is its rated energy?
Yes, the TK65E10N1,S1X is fully rated for single-pulse avalanche operation with EAS = 143 mJ at Tch = 25°C. This is validated per JEDEC JESD24-11 test conditions (VDD = 80 V, L = 26.1 µH, IAR = 65 A). Repeated avalanche stress is not guaranteed - use only for infrequent fault events in hard-switched topologies.
What is the gate threshold voltage range for TK65E10N1,S1X, and how does it affect drive requirements?
The TK65E10N1,S1X has a gate threshold voltage Vth of 2.0–4.0 V (measured at VDS = 10 V, ID = 1.0 mA). This wide range ensures reliable turn-on with 5 V or 10 V gate drivers while preventing accidental turn-on from noise below 2.0 V. For full enhancement, VGS ≥ 10 V is required to achieve the specified 4.0 mΩ RDS(ON).
Can TK65E10N1,S1X be used in synchronous rectification applications?
Yes, the TK65E10N1,S1X integrates a fast, low-loss body diode with trr = 76 ns and Qrr = 150 nC, making it suitable for synchronous rectification in buck converters up to 300 kHz. Its VDSF = −1.2 V at IDR = 65 A provides lower forward drop than discrete Schottky diodes in high-current, low-VOUT designs.
What thermal resistance values apply to TK65E10N1,S1X, and how are they measured?
The TK65E10N1,S1X specifies Rth(ch-c) = 0.65°C/W (max) from channel to case, measured with the drain tab directly attached to a heatsink. Rth(ch-a) = 83.3°C/W (max) is for free-air operation - not practical for high-power use. For system design, use Rth(ch-c) plus heatsink resistance to calculate total thermal path to ambient.
TK65E10N1,S1X Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- U-MOSVIII-H
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 148A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4.8mOhm @ 32.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 81 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5400 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 192W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
TK65E10N1,S1X FAQ
1.How can I place an order for TK65E10N1,S1X through Aetrix?
Please submit a Request for Quotation (RFQ) for TK65E10N1,S1X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK65E10N1,S1X reliable?
The price and inventory of TK65E10N1,S1X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK65E10N1,S1X is usually 5 days.
3.What payment methods are accepted for TK65E10N1,S1X?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK65E10N1,S1X transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK65E10N1,S1X?
TK65E10N1,S1X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK65E10N1,S1X order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK65E10N1,S1X?
For technical support, including TK65E10N1,S1X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK65E10N1,S1X requirements.
6.How does Aetrix verify that TK65E10N1,S1X is sourced from the original manufacturer or authorized distributors?
All TK65E10N1,S1X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK65E10N1,S1X meets industry standards.
7.What is the process for return or replacement of TK65E10N1,S1X?
All TK65E10N1,S1X units undergo pre-shipment inspection (PSI). If there is an issue with TK65E10N1,S1X, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK65E10N1,S1X part is unused and in its original packaging.
Return procedure for TK65E10N1,S1X:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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