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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK65S04N1L,LQ

Name: TK65S04N1L,LQ
Brand: Toshiba Semiconductor and Storage
SKU: TK65S04N1L,LQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK65S04N1L,LQ

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: TK65S04N1L,LQ.pdf

Description:: MOSFET N-CH 40V 65A DPAK

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Product details

Overview

TK65S04N1L,LQ from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel MOSFET (U-MOSⅧ-H) designed for high-current switching in automotive and industrial power stages. It delivers 65 A DC drain current, 40 V drain-source voltage rating, and ultra-low 3.3 mΩ (typ.) R_DS(ON) at V_GS = 10 V - enabling efficient motor drivers and synchronous buck converters.

For engineers reviewing the TK65S04N1L,LQ datasheet, TK65S04N1L,LQ pinout, TK65S04N1L,LQ application, or TK65S04N1L,LQ equivalent, key selection criteria include AEC-Q101 qualification, DPAK+ package thermal performance (R_th(ch-c) = 1.4 °C/W), and verified avalanche energy rating (E_AS = 104 mJ).

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate process to achieve low conduction loss and fast switching with Q_g = 39 nC (V_DD ≈ 32 V, I_D = 65 A). Its enhancement-mode gate threshold (V_th = 1.5–2.5 V) ensures reliable turn-on with standard 3.3 V/5 V logic-level drive.

The device integrates a robust body diode with t_rr = 63 ns and Q_rr = 47 nC under specified dI_DR/dt = 50 A/µs conditions, supporting hard-switched and synchronous rectification topologies without external freewheeling diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - supports 12 V and 24 V automotive battery systems with margin against load-dump transients
R_DS(ON) (typ.)	3.3 mΩ at V_GS = 10 V - reduces conduction loss to ≤2.2 W at 65 A, easing thermal design
I_D (DC)	65 A - enables single-device solutions for high-power BLDC motor phases or VRMs
E_AS	104 mJ - withstands inductive energy spikes in motor control and DC-DC converter switching nodes
R_th(ch-c)	1.4 °C/W - allows direct heatsink mounting via exposed drain tab for >80 W continuous dissipation
Q_g	39 nC - enables fast turn-on with moderate gate driver strength (e.g., TC4427 or similar)
t_r/t_f	8 ns / 17 ns - supports high-frequency PWM (>100 kHz) with minimal switching loss

Pinout & Package

TK65S04N1L,LQ uses the DPAK+ (TOSHIBA 2-7M1A) surface-mount package with an exposed drain pad for thermal conduction. The package weighs 0.36 g and features gull-wing leads compatible with standard reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
1: Gate	Control input	Receives gate drive signal; requires <±10 µA leakage and 1.5–2.5 V threshold for logic-level compatibility
2: Drain (heatsink)	High-side power terminal	Exposed metal tab electrically connected to drain; must be soldered to PCB copper pour for thermal and electrical integrity
3: Source	Reference node	Common return path for load current; ties to ground or low-side switch source in half-bridge configurations

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive underhood applications per stress test requirements including HTOL, HTRB, and temperature cycling
Low R_DS(ON)	3.3 mΩ typ. at 10 V drive enables ≥97% efficiency in 48 V input, 12 V output synchronous buck converters at 50 A
Robust body diode	63 ns reverse recovery time and 47 nC Q_rr reduce shoot-through risk and EMI in synchronous rectification
Single-pulse avalanche rated	104 mJ energy handling allows operation in inductive switching circuits without snubber networks
Enhancement-mode gate	1.5–2.5 V V_th ensures clean turn-on with 3.3 V microcontrollers and avoids unintended conduction during power-up

Applications

Automotive Body Control Module	Industrial BLDC Motor Driver
Use Scenario: High-side switching of solenoids, fans, and lighting loads in 12 V/24 V vehicle electrical systems. IC Role / Device Role / Timing Role: Power switch controlling load current with fast turn-on (<20 ns) and low on-state loss. Use Value: AEC-Q101 qualification and 175 °C channel temperature rating ensure reliability across extended temperature ranges (-40 to +125 °C ambient).	Use Scenario: Low-side phase switch in three-phase inverter driving 500 W–2 kW permanent-magnet motors. IC Role / Device Role / Timing Role: High-current, high-frequency switching element in PWM-driven half-bridge legs. Use Value: 65 A DC rating and 104 mJ avalanche energy support peak currents up to 130 A without derating or external protection.
Server VRM High-Side Switch	48 V Input Synchronous Buck Converter
Use Scenario: Primary switching FET in multiphase CPU/GPU voltage regulator modules operating from 48 V intermediate bus. IC Role / Device Role / Timing Role: High-side power MOSFET in synchronous buck topology with gate drive referenced to switching node. Use Value: 3.3 mΩ R_DS(ON) minimizes conduction loss at 100+ A per phase, improving overall VRM efficiency above 95%.	Use Scenario: Output stage switch in telecom/datacom DC-DC converters converting 48 V input to 3.3 V/5 V/12 V outputs. IC Role / Device Role / Timing Role: Low-R_DS(ON) synchronous rectifier replacing Schottky diode in secondary-side switching. Use Value: Body diode t_rr = 63 ns and Q_rr = 47 nC enable clean commutation at 300 kHz, reducing reverse recovery losses by >40% vs. discrete diodes.

Automotive Body Control Module

Industrial BLDC Motor Driver

Use Scenario: High-side switching of solenoids, fans, and lighting loads in 12 V/24 V vehicle electrical systems.

IC Role / Device Role / Timing Role: Power switch controlling load current with fast turn-on (<20 ns) and low on-state loss.

Use Value: AEC-Q101 qualification and 175 °C channel temperature rating ensure reliability across extended temperature ranges (-40 to +125 °C ambient).

Use Scenario: Low-side phase switch in three-phase inverter driving 500 W–2 kW permanent-magnet motors.

IC Role / Device Role / Timing Role: High-current, high-frequency switching element in PWM-driven half-bridge legs.

Use Value: 65 A DC rating and 104 mJ avalanche energy support peak currents up to 130 A without derating or external protection.

Server VRM High-Side Switch

48 V Input Synchronous Buck Converter

Use Scenario: Primary switching FET in multiphase CPU/GPU voltage regulator modules operating from 48 V intermediate bus.

IC Role / Device Role / Timing Role: High-side power MOSFET in synchronous buck topology with gate drive referenced to switching node.

Use Value: 3.3 mΩ R_DS(ON) minimizes conduction loss at 100+ A per phase, improving overall VRM efficiency above 95%.

Use Scenario: Output stage switch in telecom/datacom DC-DC converters converting 48 V input to 3.3 V/5 V/12 V outputs.

IC Role / Device Role / Timing Role: Low-R_DS(ON) synchronous rectifier replacing Schottky diode in secondary-side switching.

Use Value: Body diode t_rr = 63 ns and Q_rr = 47 nC enable clean commutation at 300 kHz, reducing reverse recovery losses by >40% vs. discrete diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(ON) = 3.7 mΩ (typ.), 40 V, DPAK, AEC-Q101 qualified	Slightly higher conduction loss; identical thermal resistance and avalanche rating	Preferred where ST ecosystem integration or dual-source procurement is required
IRL1404ZPBF	R_DS(ON) = 4.0 mΩ (typ.), 40 V, TO-220AB, not AEC-Q101 qualified	Larger through-hole package; lacks automotive qualification and lower thermal performance (R_th(j-c) ≈ 2.5 °C/W)	Suitable for non-automotive industrial prototypes where cost and availability outweigh qualification needs

Compared with STL220N4F7AG and IRL1404ZPBF, TK65S04N1L,LQ offers the lowest R_DS(ON), best thermal resistance, and full AEC-Q101 compliance - making it optimal for production-grade automotive and high-reliability industrial power stages where efficiency and qualification are mandatory.

Availability

TK65S04N1L,LQ is available at Aetrix Electronics and suitable for automotive body control modules, industrial BLDC motor drivers, and server VRM designs requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for TK65S04N1L,LQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on automotive, industrial, and computing applications.

The TK65S04N1L,LQ belongs to Toshiba's U-MOSⅧ-H automotive-qualified MOSFET product line, engineered specifically for high-efficiency, high-reliability power switching in harsh-environment applications such as engine control units and electric power steering systems.

FAQ

What is the maximum junction temperature rating for TK65S04N1L,LQ?

The TK65S04N1L,LQ has a maximum channel temperature (T_ch) rating of 175 °C, validated per AEC-Q101 requirements. This allows operation in under-hood automotive environments where ambient temperatures reach 125 °C, provided thermal design maintains T_ch ≤ 175 °C using the specified R_th(ch-c) = 1.4 °C/W path to heatsink.

Is TK65S04N1L,LQ suitable for synchronous rectification in DC-DC converters?

Yes, TK65S04N1L,LQ is suitable for synchronous rectification due to its low R_DS(ON) (3.3 mΩ typ.), fast body diode (t_rr = 63 ns, Q_rr = 47 nC), and enhancement-mode gate. These characteristics reduce conduction and reverse recovery losses compared to Schottky diodes, especially in 48 V input buck converters operating above 200 kHz.

Does TK65S04N1L,LQ require a gate resistor for safe operation?

While TK65S04N1L,LQ can operate without a gate resistor in low-noise lab settings, a series gate resistor (typically 2.2–10 Ω) is recommended to dampen ringing, limit peak gate current, and control dV/dt during switching. The datasheet specifies RG = 4.7 Ω for dynamic characterization, confirming this value as a robust starting point for production designs.

What is the gate threshold voltage range for TK65S04N1L,LQ?

The gate threshold voltage (V_th) for TK65S04N1L,LQ is specified as 1.5 to 2.5 V at V_DS = 10 V and I_D = 0.3 mA. This range ensures reliable turn-on with 3.3 V logic-level microcontrollers while preventing false triggering from noise or slow-rising signals below 1.5 V.

How does TK65S04N1L,LQ compare to standard DPAK MOSFETs in thermal performance?

TK65S04N1L,LQ uses the enhanced DPAK+ (2-7M1A) package with improved thermal interface to the PCB heatsink, achieving R_th(ch-c) = 1.4 °C/W - significantly better than standard DPAK (typically ~2.0–2.5 °C/W). This 30–40% improvement allows higher continuous power dissipation without additional heatsinking, critical for space-constrained automotive modules.

TK65S04N1L,LQ Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSVIII-H

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 65A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.3mOhm @ 32.5A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 300µA

Gate Charge (Qg) (Max) @ Vgs:: 39 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2550 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 107W (Tc)

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK+

TK65S04N1L,LQ FAQ

1.How can I place an order for TK65S04N1L,LQ through Aetrix?

Please submit a Request for Quotation (RFQ) for TK65S04N1L,LQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK65S04N1L,LQ reliable?

The price and inventory of TK65S04N1L,LQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK65S04N1L,LQ is usually 5 days.

3.What payment methods are accepted for TK65S04N1L,LQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK65S04N1L,LQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK65S04N1L,LQ?

TK65S04N1L,LQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK65S04N1L,LQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK65S04N1L,LQ?

For technical support, including TK65S04N1L,LQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK65S04N1L,LQ requirements.

6.How does Aetrix verify that TK65S04N1L,LQ is sourced from the original manufacturer or authorized distributors?

All TK65S04N1L,LQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK65S04N1L,LQ meets industry standards.

7.What is the process for return or replacement of TK65S04N1L,LQ?

All TK65S04N1L,LQ units undergo pre-shipment inspection (PSI). If there is an issue with TK65S04N1L,LQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK65S04N1L,LQ part is unused and in its original packaging.

Return procedure for TK65S04N1L,LQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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