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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK65S04N1L,LXHQ

Name: TK65S04N1L,LXHQ
Brand: Toshiba Semiconductor and Storage
SKU: TK65S04N1L,LXHQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK65S04N1L,LXHQ

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: TK65S04N1L,LXHQ.pdf

Description:: MOSFET N-CH 40V 65A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:4,642

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Product details

Overview

TK65S04N1L,LXHQ from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in U-MOSⅧ-H process, designed for high-current switching in automotive and industrial power stages. It delivers 65 A DC drain current, 40 V drain-source voltage rating, and ultra-low 3.3 mΩ (typ.) R_DS(ON) at V_GS = 10 V - enabling efficient operation in motor drivers and synchronous buck regulators.

For engineers reviewing the TK65S04N1L,LXHQ datasheet, TK65S04N1L,LXHQ pinout, TK65S04N1L,LXHQ application, or TK65S04N1L,LXHQ equivalent, key selection criteria include AEC-Q101 qualification, DPAK+ package thermal performance (R_th(ch-c) = 1.4 °C/W), and verified avalanche energy rating (E_AS = 104 mJ) under defined test conditions.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate structure to achieve low on-resistance while maintaining robust switching characteristics. Its enhancement-mode gate threshold (1.5–2.5 V) ensures compatibility with standard 3.3 V/5 V logic-level drive, and its 2550 pF input capacitance (C_iss) supports stable gate control in high-frequency PWM applications up to several hundred kHz.

The device integrates an intrinsic body diode with 63 ns reverse recovery time and 47 nC Q_rr, enabling use in freewheeling paths without external diodes in synchronous rectification topologies. Its single-pulse avalanche rating (IAS = 65 A, EAS = 104 mJ) is validated per AEC-Q101 stress conditions, supporting reliable operation under transient overvoltage events.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - maximum blocking voltage for 12 V/24 V automotive and industrial bus systems
R_DS(ON) (typ.)	3.3 mΩ at V_GS = 10 V - enables <1 W conduction loss at 65 A, reducing heatsink requirements
I_D (DC)	65 A - supports high-power motor drives and VRMs without parallel devices
E_AS	104 mJ - quantified avalanche energy handling capability under standardized test (V_DD = 32 V, L = 19 µH)
R_th(ch-c)	1.4 °C/W - enables direct heatsink mounting via exposed drain pad for efficient thermal management
Q_g	39 nC - total gate charge determining required driver strength for <51 ns turn-off time at RG = 4.7 Ω
V_th	1.5–2.5 V - logic-compatible threshold ensuring reliable turn-on with 3.3 V microcontrollers

Pinout & Package

TK65S04N1L,LXHQ is housed in a surface-mount DPAK+ (TOSHIBA 2-7M1A) package with an exposed drain pad for thermal and electrical connection. The package weighs 0.36 g and features gull-wing leads compatible with standard reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
1: Gate	Control electrode	Receives gate drive signal; requires ≤±20 V bias; low 9 nC Q_gs1 enables fast turn-on
2: Drain (heatsink)	Main current path output / thermal interface	Electrically and thermally connected to PCB copper pour; carries full load current and dissipates heat directly
3: Source	Reference node / current return path	Serves as power ground reference; connects to low-side shunt or controller ground; critical for gate drive loop integrity

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements including HTGB, HTRB, and UIS
U-MOSⅧ-H trench process	Delivers 3.3 mΩ R_DS(ON) in DPAK+ - 25% lower than prior U-MOSⅦ generation at same die size
Low Q_gd/Q_g ratio	7 nC / 39 nC = 0.18 - minimizes Miller plateau duration, improving hard-switching robustness
Body diode with low Q_rr	47 nC reverse recovery charge - reduces switching losses and EMI in synchronous rectifier configurations
ESD-sensitive handling	Class C (≥1 kV HBM) - requires grounded workstations and anti-static packaging during assembly

Applications

Automotive Body Control Module	Industrial BLDC Motor Driver
Use Scenario: High-side load switching for headlight, fog lamp, and HVAC fan control in 12 V vehicle architectures. IC Role / Device Role / Timing Role: Power switch controlling up to 65 A peak loads with integrated thermal protection via channel temperature monitoring. Use Value: AEC-Q101 qualification and 175 °C T_ch rating ensure reliability across under-hood temperature extremes (-40 to 150 °C ambient).	Use Scenario: Low-side switching in three-phase inverter stages for factory automation motors (0.5–5 kW range). IC Role / Device Role / Timing Role: Synchronous rectifier and PWM-controlled current path with fast 17 ns fall time and low 3.3 mΩ conduction loss. Use Value: 104 mJ single-pulse avalanche energy withstands inductive kickback during fault shutdown without external snubbers.
Server VRM High-Side Switch	Power Tool Battery Management
Use Scenario: High-efficiency synchronous buck converter delivering 12 V → 1.2 V @ 100+ A for CPU/GPU power domains. IC Role / Device Role / Timing Role: High-side power MOSFET operating at 300–500 kHz with optimized gate charge profile for minimal switching loss. Use Value: 2550 pF C_iss and 130 pF Crss support stable gate drive with common 1–4.7 Ω series resistors and reduce risk of shoot-through.	Use Scenario: Main battery disconnect and motor drive switching in cordless drills and impact drivers (18–40 V Li-ion packs). IC Role / Device Role / Timing Role: Bidirectional current-handling switch supporting both motor drive and regenerative braking paths. Use Value: 63 ns t_rr and low 1.2 V V_DSF body diode forward drop minimize heat generation during freewheeling phases.

Automotive Body Control Module

Industrial BLDC Motor Driver

Use Scenario: High-side load switching for headlight, fog lamp, and HVAC fan control in 12 V vehicle architectures.

IC Role / Device Role / Timing Role: Power switch controlling up to 65 A peak loads with integrated thermal protection via channel temperature monitoring.

Use Value: AEC-Q101 qualification and 175 °C T_ch rating ensure reliability across under-hood temperature extremes (-40 to 150 °C ambient).

Use Scenario: Low-side switching in three-phase inverter stages for factory automation motors (0.5–5 kW range).

IC Role / Device Role / Timing Role: Synchronous rectifier and PWM-controlled current path with fast 17 ns fall time and low 3.3 mΩ conduction loss.

Use Value: 104 mJ single-pulse avalanche energy withstands inductive kickback during fault shutdown without external snubbers.

Server VRM High-Side Switch

Power Tool Battery Management

Use Scenario: High-efficiency synchronous buck converter delivering 12 V → 1.2 V @ 100+ A for CPU/GPU power domains.

IC Role / Device Role / Timing Role: High-side power MOSFET operating at 300–500 kHz with optimized gate charge profile for minimal switching loss.

Use Value: 2550 pF C_iss and 130 pF Crss support stable gate drive with common 1–4.7 Ω series resistors and reduce risk of shoot-through.

Use Scenario: Main battery disconnect and motor drive switching in cordless drills and impact drivers (18–40 V Li-ion packs).

IC Role / Device Role / Timing Role: Bidirectional current-handling switch supporting both motor drive and regenerative braking paths.

Use Value: 63 ns t_rr and low 1.2 V V_DSF body diode forward drop minimize heat generation during freewheeling phases.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V, 220 A rated, 1.4 mΩ R_DS(ON), PowerFLAT 5x6 package, non-AEC-Q101	Higher current capacity but larger footprint; lacks automotive qualification	Select when board space allows larger package and AEC-Q101 is not required
IRL1404ZPBF	40 V, 165 A rated, 4.0 mΩ R_DS(ON), TO-220AB package, AEC-Q101 compliant	Through-hole mounting; higher R_DS(ON); no exposed drain thermal pad	Select when legacy through-hole assembly or higher surge current margin is prioritized over thermal efficiency

Compared with STL220N4F7AG and IRL1404ZPBF, TK65S04N1L,LXHQ offers optimal balance of AEC-Q101 compliance, DPAK+ thermal performance, and 3.3 mΩ on-resistance - making it preferred for space-constrained, thermally demanding automotive and industrial switching where surface-mount reliability is critical.

Availability

TK65S04N1L,LXHQ is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor drives, and server VRM designs requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for TK65S04N1L,LXHQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with focus on automotive, industrial, and computing markets.

The TK65S04N1L,LXHQ belongs to Toshiba's U-MOSⅧ-H automotive-qualified power MOSFET family, engineered specifically for high-efficiency, high-reliability switching in 12 V/24 V and 48 V power systems.

FAQ

What is the gate threshold voltage range for TK65S04N1L,LXHQ?

The gate threshold voltage (V_th) of TK65S04N1L,LXHQ is specified from 1.5 V to 2.5 V at V_DS = 10 V and I_D = 0.3 mA. This logic-level range ensures reliable turn-on with standard 3.3 V or 5 V microcontroller outputs. The device remains fully enhanced above 4.5 V, achieving its rated 3.3 mΩ R_DS(ON) at V_GS = 10 V. Designers should verify gate drive margin against worst-case V_th spread in their specific application.

Is TK65S04N1L,LXHQ suitable for synchronous rectification?

Yes, TK65S04N1L,LXHQ is suitable for synchronous rectification due to its low R_DS(ON) (3.3 mΩ typ.), fast 17 ns fall time, and characterized body diode with 63 ns reverse recovery time and 47 nC Q_rr. Its DPAK+ package provides low-inductance source connections critical for high-frequency rectifier layouts. However, gate drive timing must account for the 7 nC Q_gd to avoid cross-conduction, especially at >200 kHz switching frequencies.

Does TK65S04N1L,LXHQ have avalanche capability?

Yes, TK65S04N1L,LXHQ is rated for single-pulse avalanche energy (E_AS) of 104 mJ under standardized test conditions (V_DD ≈ 32 V, L = 19 µH, I_AS = 65 A, T_ch = 25 °C). This capability is validated per AEC-Q101 requirements and supports robustness against inductive switching transients in motor and relay drive circuits. Continuous avalanche operation is not guaranteed and must be avoided in design.

What is the thermal resistance from channel to case for TK65S04N1L,LXHQ?

The channel-to-case thermal resistance (R_th(ch-c)) of TK65S04N1L,LXHQ is 1.4 °C/W maximum. This value assumes proper soldering of the exposed drain pad to a ≥100 mm² copper area on the PCB. Effective thermal design requires minimizing interfacial resistance between the DPAK+ drain tab and heatsink or copper pour, as this parameter directly determines junction temperature rise under 65 A DC load.

How does the DPAK+ package of TK65S04N1L,LXHQ differ from standard DPAK?

The DPAK+ package (TOSHIBA 2-7M1A) used by TK65S04N1L,LXHQ features an enlarged drain pad and optimized leadframe geometry versus standard DPAK, yielding improved thermal performance (R_th(ch-c) = 1.4 °C/W vs. ~2.0 °C/W typical for DPAK) and higher current handling. Mechanical dimensions remain compatible with standard DPAK footprints, allowing drop-in replacement in many layouts - though thermal pad stencil design and solder volume must be verified for optimal heat transfer.

TK65S04N1L,LXHQ Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSVIII-H

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 65A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.3mOhm @ 32.5A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 300µA

Gate Charge (Qg) (Max) @ Vgs:: 39 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2550 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 107W (Tc)

Operating Temperature:: 175°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK+

TK65S04N1L,LXHQ FAQ

1.How can I place an order for TK65S04N1L,LXHQ through Aetrix?

Please submit a Request for Quotation (RFQ) for TK65S04N1L,LXHQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK65S04N1L,LXHQ reliable?

The price and inventory of TK65S04N1L,LXHQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK65S04N1L,LXHQ is usually 5 days.

3.What payment methods are accepted for TK65S04N1L,LXHQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK65S04N1L,LXHQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK65S04N1L,LXHQ?

TK65S04N1L,LXHQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK65S04N1L,LXHQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK65S04N1L,LXHQ?

For technical support, including TK65S04N1L,LXHQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK65S04N1L,LXHQ requirements.

6.How does Aetrix verify that TK65S04N1L,LXHQ is sourced from the original manufacturer or authorized distributors?

All TK65S04N1L,LXHQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK65S04N1L,LXHQ meets industry standards.

7.What is the process for return or replacement of TK65S04N1L,LXHQ?

All TK65S04N1L,LXHQ units undergo pre-shipment inspection (PSI). If there is an issue with TK65S04N1L,LXHQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK65S04N1L,LXHQ part is unused and in its original packaging.

Return procedure for TK65S04N1L,LXHQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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