Toshiba Semiconductor and Storage TK6A65D(STA4,Q,M)

Overview

TK6A65D(STA4,Q,M) from Toshiba is a silicon N-channel power MOSFET in the π-MOS VII family, designed for high-voltage switching regulator applications. It delivers 6 A continuous drain current, 650 V drain-source breakdown voltage, and low 0.95 Ω (typ.) R_DS(ON), enabling efficient DC-DC conversion in industrial SMPS and AC-DC adapters.

For engineers reviewing the TK6A65D(STA4,Q,M) datasheet, TK6A65D(STA4,Q,M) pinout, TK6A65D(STA4,Q,M) application, or TK6A65D(STA4,Q,M) equivalent, key selection criteria include avalanche energy rating (281 mJ), gate threshold voltage range (2.0–4.0 V), thermal resistance (2.78 °C/W channel-to-case), and RoHS-compliant SC-67 package compatibility.

Technical Context

This MOSFET employs a planar π-MOS VII structure optimized for ruggedness and fast switching in hard-switched topologies. Its 4.0 S typical forward transfer admittance and 20 nC total gate charge support high-efficiency operation at moderate switching frequencies up to several hundred kHz.

The device integrates an intrinsic body diode with 1300 ns reverse recovery time and 10 μC Q_rr, making it suitable for flyback and resonant converters where diode conduction occurs during dead time. Avalanche-rated design allows reliable operation under inductive load switching stress without external snubbers.

Key Specifications

Pinout & Package

TK6A65D(STA4,Q,M) is housed in the SC-67 (Toshiba 2-10U1B) package - a through-hole, isolated-tab power package with 3 leads and 1.7 g typical mass. The tab is electrically connected to the drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STP6NK60ZFP and IXTP50N10P, TK6A65D(STA4,Q,M) uniquely balances 650 V capability, 0.95 Ω conduction resistance, and 20 nC gate charge in a thermally efficient SC-67 package-making it optimal for space-constrained, high-reliability industrial SMPS where voltage margin and avalanche immunity are critical.

Availability

TK6A65D(STA4,Q,M) is available at Aetrix Electronics and suitable for industrial SMPS, AC-DC adapters, LED driver power stages, and motor control H-bridge legs requiring stable component supply and long-term manufacturability.

Supply support for TK6A65D(STA4,Q,M) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and industrial-grade performance.

The π-MOS VII series, including TK6A65D(STA4,Q,M), was developed specifically for high-voltage switching power supplies demanding low R_DS(ON), high avalanche energy, and stable parametric behavior across temperature.

FAQ

What is the maximum continuous drain current rating for TK6A65D(STA4,Q,M) at 25°C case temperature?

The TK6A65D(STA4,Q,M) has a maximum continuous drain current (I_D) rating of 6 A at T_c = 25°C. This rating assumes adequate heatsinking to maintain channel temperature below 150°C. At elevated case temperatures, the current must be linearly derated per the Safe Operating Area curve - for example, to ~3.5 A at T_c = 100°C. Always verify thermal design using R_th(ch-c) = 2.78 °C/W.

Does TK6A65D(STA4,Q,M) have an integrated body diode, and what are its key parameters?

Yes, TK6A65D(STA4,Q,M) includes an intrinsic body diode. Its key parameters are: forward voltage V_DSF = −1.7 V at I_DR = 6 A and V_GS = 0 V; reverse recovery time t_rr = 1300 ns; and reverse recovery charge Q_rr = 10 μC under specified test conditions. These values impact efficiency in flyback and quasi-resonant converters where the diode conducts during dead time.

What is the gate threshold voltage range for TK6A65D(STA4,Q,M), and how does it affect drive circuit design?

The gate threshold voltage (V_th) for TK6A65D(STA4,Q,M) is specified as 2.0–4.0 V at V_DS = 10 V and I_D = 1 mA. This range ensures reliable turn-on with standard 5 V logic-level gate drivers while avoiding unintended conduction from noise. Designers should provide ≥10 V gate drive for full enhancement and minimal R_DS(ON), as the device is not a true logic-level MOSFET.

Is TK6A65D(STA4,Q,M) suitable for avalanche operation, and what is its single-pulse rating?

Yes, TK6A65D(STA4,Q,M) is fully rated for single-pulse avalanche operation with E_AS = 281 mJ at T_ch = 25°C, V_DD = 90 V, L = 13.8 mH, and I_AR = 6 A. This rating permits safe energy absorption during inductive switching events without external clamping, provided the channel temperature remains within limits and pulse repetition is controlled per EAR = 4.5 mJ.

What package type and pin configuration does TK6A65D(STA4,Q,M) use, and is the tab electrically active?

TK6A65D(STA4,Q,M) uses the SC-67 package (JEITA designation), also labeled as Toshiba 2-10U1B. It has three leads: Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source. The metal tab is internally connected to the Drain terminal and must be electrically isolated from the heatsink unless the heatsink is referenced to the drain potential - critical for layout safety and thermal performance.