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Toshiba Semiconductor and Storage TK6A80E,S4X
- Part No.:
- TK6A80E,S4X
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
TK6A80E,S4X.pdf
- Description:
- MOSFET N-CH 800V 6A TO220SIS
- Quantity:
- Payment:
- Shipping:
Inventory:50
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Product details
Overview
TK6A80E,S4X from Toshiba is a silicon N-channel power MOSFET in the π-MOSⅢ family, designed for high-voltage switching applications. It delivers 800 V drain-source breakdown voltage, 6 A continuous drain current, and low on-resistance of 1.35 Ω (typ.) at VGS = 10 V, enabling efficient operation in offline AC-DC converters and switching voltage regulators.
For engineers reviewing the TK6A80E,S4X datasheet, TK6A80E,S4X pinout, TK6A80E,S4X application, or TK6A80E,S4X equivalent, this device is selected for high-reliability 600–800 V primary-side switching where RDS(ON), avalanche ruggedness (EAS = 308 mJ), and gate charge (Qg = 32 nC) directly impact efficiency and thermal design.
Technical Context
This MOSFET employs a planar vertical structure optimized for high-voltage blocking and fast switching. Its enhancement-mode threshold (Vth = 2.5–4.0 V) ensures reliable turn-on with standard 10 V gate drive, while low Crss (10 pF typ.) and dv/dt ruggedness ≥20 V/ns support stable operation under high dV/dt transients in flyback and PFC stages.
Thermal performance is defined by Rth(ch-c) = 2.78 °C/W (junction-to-case), requiring heatsinking for sustained 6 A DC operation. The device features integrated body diode with trr = 1100 ns and Qrr = 8 µC, suitable for discontinuous conduction mode (DCM) topologies without external snubbing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 800 V - Supports universal-input offline SMPS designs up to 400 V DC bus with margin. |
| RDS(ON) | 1.35 Ω (typ.) at VGS = 10 V - Limits conduction loss to ≤49 W at 6 A, enabling TO-220SIS package use without forced air. |
| ID (DC) | 6 A - Rated for continuous primary-side switching in <100 W adapters and industrial power supplies. |
| EAS | 308 mJ - Withstands single-pulse avalanche energy during overvoltage events without failure, reducing need for clamping circuits. |
| Qg | 32 nC - Enables efficient 100–300 kHz switching with standard gate drivers; Qgd/Qgs1 ratio supports clean turn-on. |
| dv/dt Ruggedness | ≥20 V/ns - Prevents false turn-on during high-speed voltage transitions in hard-switched topologies. |
| Tch max | 150 °C - Defines maximum channel temperature for reliability; requires thermal design ensuring Tc ≤ 100 °C at full load. |
Pinout & Package
TK6A80E,S4X is housed in a TO-220SIS (JEITA SC-67) package with isolated tab, offering creepage/clearance compliance for reinforced insulation in AC-DC applications. The plastic case provides 2000 VRMS isolation between drain and mounting surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1: Gate | Control input | Receives 10 V logic-level drive; low input capacitance (Ciss = 1350 pF) minimizes driver power loss. |
| 2: Drain | High-voltage output node | Connected to primary winding or rectified AC line; electrically isolated from tab for safe heatsink mounting. |
| 3: Source | Power return reference | Serves as local ground for gate drive; low-inductance layout critical to suppress ringing during switching. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at high VDSS | 1.35 Ω typ. at 800 V rating enables higher efficiency than comparable 650 V MOSFETs in same package. |
| Enhancement-mode threshold | Vth = 2.5–4.0 V ensures robust noise immunity and prevents accidental turn-on below 2.5 V gate bias. |
| Integrated avalanche-rated structure | Guaranteed EAS = 308 mJ eliminates need for external avalanche protection in most flyback designs. |
| Body diode with controlled recovery | trr = 1100 ns and Qrr = 8 µC reduce switching loss and EMI in DCM operation versus ultra-fast diodes. |
| Isolated package | TO-220SIS provides 2000 VRMS isolation, allowing direct heatsink mounting without insulating pads in Class II systems. |
Applications
| AC-DC Adapters | Industrial Power Supplies |
|---|---|
Use Scenario: 36–65 W universal-input offline flyback converter for consumer electronics. IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer during each switching cycle. Use Value: Low RDS(ON) and 800 V rating allow single-device operation across 90–264 V AC input without derating or series stacking. |
Use Scenario: 75–100 W open-frame power supply for factory automation controllers. IC Role / Device Role / Timing Role: Main switching element in active-clamp forward or LLC resonant converter primary stage. Use Value: Avalanche ruggedness and 150 °C channel rating support continuous operation under transient overloads common in industrial environments. |
| LED Driver Systems | UPS & Backup Power |
Use Scenario: Constant-current LED driver for street lighting operating from 277 V AC mains. IC Role / Device Role / Timing Role: High-side switch regulating bulk DC link voltage before buck/boost conversion. Use Value: Isolated TO-220SIS package simplifies thermal management and meets safety spacing requirements for outdoor-rated luminaires. |
Use Scenario: Line-interactive UPS with boost/buck correction stage handling 120/230 V AC input fluctuations. IC Role / Device Role / Timing Role: Bidirectional switching element in IGBT/MOSFET hybrid inverter half-bridge. Use Value: Fast dv/dt immunity and low gate charge enable precise timing control during grid-synchronization transitions without shoot-through risk. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP6NK80ZFP | 800 V, 5.5 A, RDS(ON) = 1.5 Ω, Zener-protected gate, TO-220FP package (non-isolated). | Lacks drain-to-tab isolation; requires insulating washer for heatsink mounting. | Preferred when gate protection against overvoltage is prioritized over isolation; not drop-in due to non-isolated package. |
| FQP8N80C | 800 V, 7.5 A, RDS(ON) = 1.4 Ω, TO-220 package (non-isolated), higher ID but no guaranteed EAS. | No specified avalanche energy rating; unsuitable for unclamped inductive switching. | Selected for higher current capability where avalanche stress is absent; requires external clamping in flyback designs. |
Compared with STP6NK80ZFP and FQP8N80C, the TK6A80E,S4X uniquely combines guaranteed avalanche ruggedness, isolated packaging, and tight Vth distribution-making it optimal for safety-critical, space-constrained offline SMPS where thermal and isolation integrity are non-negotiable.
Availability
TK6A80E,S4X is available at Aetrix Electronics and suitable for AC-DC adapters, industrial power supplies, and LED driver systems requiring stable component supply and long-term lifecycle assurance.
Supply support for TK6A80E,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions with global manufacturing and quality certification.
The TK6A80E,S4X belongs to Toshiba's π-MOSⅢ high-voltage MOSFET product line, engineered for high-efficiency, high-reliability switching in offline power conversion systems up to 100 W.
FAQ
What is the maximum continuous drain current rating for TK6A80E,S4X?
The TK6A80E,S4X is rated for 6 A DC drain current at Tc = 25 °C. Derating is required above 25 °C case temperature per the Rth(ch-c) = 2.78 °C/W thermal resistance; at Tc = 100 °C, the usable ID drops to approximately 3.3 A to maintain Tch ≤ 150 °C. This rating assumes adequate heatsinking and proper PCB copper area.
Does TK6A80E,S4X have an isolated package, and what is its isolation voltage?
Yes, the TK6A80E,S4X uses the TO-220SIS package with electrically isolated drain tab, certified for 2000 VRMS isolation between drain and mounting surface. This allows direct attachment to grounded heatsinks without insulating hardware-critical for Class II AC-DC designs meeting IEC 62368-1 creepage and clearance requirements.
What is the typical gate charge profile of TK6A80E,S4X, and how does it affect driver selection?
The TK6A80E,S4X has total gate charge Qg = 32 nC (typ.), with Qgs1 = 10 nC and Qgd = 12 nC. This profile supports efficient switching at 200–300 kHz using standard 1–2 A peak gate drivers (e.g., TC4420, UCC3732x). The balanced Qgd/Qgs1 ratio minimizes Miller-induced oscillation during turn-on, reducing need for gate resistors >10 Ω.
Can TK6A80E,S4X be used in avalanche mode, and what is its rated single-pulse energy?
Yes, the TK6A80E,S4X is fully rated for single-pulse avalanche operation with guaranteed EAS = 308 mJ at Tch = 25 °C. This specification permits safe operation during inductive turn-off transients in flyback and forward converters without external snubbers-provided the pulse duration and repetition rate stay within the SOA limits shown in Figure 8.14 of the datasheet.
What is the body diode reverse recovery performance of TK6A80E,S4X, and how does it impact EMI?
The TK6A80E,S4X body diode exhibits trr = 1100 ns and Qrr = 8 µC under IDR = 6 A, VGS = 0 V conditions. This soft, moderate recovery characteristic reduces high-frequency ringing and di/dt-induced EMI compared to ultrafast diodes-making it well-suited for DCM flyback and quasi-resonant converters where diode recovery dominates switching noise.
TK6A80E,S4X Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- π-MOSVIII
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 800 V
- Current - Continuous Drain (Id) @ 25°C:
- 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.7Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs:
- 32 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1350 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 45W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220SIS
TK6A80E,S4X FAQ
1.How can I place an order for TK6A80E,S4X through Aetrix?
Please submit a Request for Quotation (RFQ) for TK6A80E,S4X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK6A80E,S4X reliable?
The price and inventory of TK6A80E,S4X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK6A80E,S4X is usually 5 days.
3.What payment methods are accepted for TK6A80E,S4X?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK6A80E,S4X transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK6A80E,S4X?
TK6A80E,S4X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK6A80E,S4X order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK6A80E,S4X?
For technical support, including TK6A80E,S4X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK6A80E,S4X requirements.
6.How does Aetrix verify that TK6A80E,S4X is sourced from the original manufacturer or authorized distributors?
All TK6A80E,S4X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK6A80E,S4X meets industry standards.
7.What is the process for return or replacement of TK6A80E,S4X?
All TK6A80E,S4X units undergo pre-shipment inspection (PSI). If there is an issue with TK6A80E,S4X, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK6A80E,S4X part is unused and in its original packaging.
Return procedure for TK6A80E,S4X:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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