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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK6P53D(T6RSS-Q)

Name: TK6P53D(T6RSS-Q)
Brand: Toshiba Semiconductor and Storage
SKU: TK6P53D(T6RSS-Q)
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK6P53D(T6RSS-Q)

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: TK6P53D(T6RSS-Q).pdf

Description:: MOSFET N-CH 525V 6A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:1,988

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Product details

Overview

TK6P53D(T6RSS-Q) from Toshiba is a silicon N-channel power MOSFET designed for high-voltage switching regulator applications. It features 525 V drain-source breakdown voltage, 1.1 Ω typical R_DS(ON) at V_GS = 10 V and I_D = 3 A, 2.5 S typical forward transfer admittance, 100 W drain power dissipation at T_c = 25°C, and 119 mJ single-pulse avalanche energy - enabling robust operation in offline SMPS primary-side switches.

For engineers reviewing the TK6P53D(T6RSS-Q) datasheet, TK6P53D(T6RSS-Q) pinout, TK6P53D(T6RSS-Q) application, or TK6P53D(T6RSS-Q) equivalent, key selection criteria include verified 525 V V_DSS, thermal resistance R_th(ch-c) = 1.25 °C/W, gate threshold range (2.4–4.4 V), repetitive avalanche rating (10 mJ), and JEDEC-unregistered but Toshiba-qualified 2-7K1A package with isolated heat sink tab.

Technical Context

This MOSFET employs π-MOSⅦ process technology to achieve low conduction loss and high transconductance in a high-voltage discrete package. Its enhancement-mode operation, 30 V gate-source rating, and 12 nC total gate charge support efficient hard-switched flyback and forward converter topologies up to several hundred kHz.

The device integrates an intrinsic body diode with −1.7 V forward voltage at 6 A and 1200 ns reverse recovery time, making it suitable for discontinuous conduction mode (DCM) operation where diode conduction occurs during dead time. Avalanche ruggedness is validated under defined test conditions (V_DD = 90 V, L = 5.67 mH, I_AR = 6 A).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	525 V - supports 400 V AC mains input with margin for surge and ringing in offline SMPS
R_DS(ON) (typ.)	1.1 Ω @ V_GS = 10 V, I_D = 3 A - enables <1.1 W conduction loss at 3 A DC current
\|Y_fs\| (typ.)	2.5 S - delivers high gain for stable gate drive in high-noise industrial environments
E_AS	119 mJ - withstands single-energy avalanche events without failure in unclamped inductive switching
R_th(ch-c)	1.25 °C/W - allows 100 W continuous dissipation with ≤125°C case temperature rise above ambient
Q_g	12 nC - determines gate driver current requirement (~1.2 A peak for 10 ns rise time)
V_th range	2.4–4.4 V @ V_DS = 10 V, I_D = 1 mA - ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers

Pinout & Package

TK6P53D(T6RSS-Q) is housed in a through-hole, isolated-tab TO-220AB variant designated by Toshiba as 2-7K1A. The metal tab is electrically connected to the Drain terminal and serves as the primary thermal path to heatsink. Package weight is 0.36 g (typ.).

Pin/Terminal	Circuit Role	Design Meaning
1. GATE	Control electrode	Receives gate drive signal; requires ≥10 V for full enhancement; sensitive to ESD (±1 μA leakage max)
2. DRAIN (Heat Sink)	High-voltage output node	Connected to primary winding of transformer or bulk capacitor; electrically tied to metal tab for thermal conduction
3. SOURCE	Reference node / return path	Provides common reference for gate drive and current sensing; forms source-follower configuration in self-driven synchronous rectification

Key Features

Feature	Design Value
π-MOSⅦ process technology	Enables optimized trade-off between R_DS(ON) and Q_g for high-frequency switching efficiency
Isolated heat sink tab	Allows mounting to grounded heatsink without electrical isolation hardware, reducing BOM cost and layout complexity
119 mJ single-pulse avalanche energy	Permits safe operation in unclamped inductive switching scenarios without external snubbers in many designs
Low IDSS (≤10 μA @ 525 V)	Minimizes standby power loss in high-voltage hold-up circuits and auxiliary supplies
125 °C channel temperature limit	Supports extended operation in industrial ambient temperatures up to 85°C with appropriate derating

Applications

AC-DC Adapter Primary Switch	Industrial SMPS Main Switch
Use Scenario: 65 W universal-input offline flyback converter powering consumer electronics. IC Role / Device Role: Primary-side high-voltage switch controlling energy transfer to secondary winding. Use Value: 525 V V_DSS and 1.1 Ω R_DS(ON) enable >85% efficiency at full load while maintaining safety margin over 375 V DC bus.	Use Scenario: 200 W open-frame industrial power supply operating in 0–50°C ambient with forced air cooling. IC Role / Device Role: Main switching transistor in forward converter topology driving center-tapped transformer. Use Value: 100 W P_D rating and 1.25 °C/W R_th(ch-c) allow sustained operation at 85°C case temperature with minimal thermal derating.
LED Driver Bulk Switch	UPS Inverter Stage
Use Scenario: High-bay LED fixture with active PFC + flyback stage driving 100 W LED load. IC Role / Device Role: Post-PFC bulk switch handling 400 V DC link voltage in constant-current regulation loop. Use Value: Low leakage (IDSS ≤10 μA) reduces no-load power consumption below 0.3 W, meeting Energy Star requirements.	Use Scenario: Line-interactive UPS with bidirectional DC-AC inverter stage converting 360 V DC bus to 230 V AC output. IC Role / Device Role: High-side switch in half-bridge configuration managing reactive power and waveform fidelity. Use Value: 119 mJ E_AS and 10 mJ EAR ratings ensure reliability during grid fault transitions and load dump events.

AC-DC Adapter Primary Switch

Industrial SMPS Main Switch

Use Scenario: 65 W universal-input offline flyback converter powering consumer electronics.

IC Role / Device Role: Primary-side high-voltage switch controlling energy transfer to secondary winding.

Use Value: 525 V V_DSS and 1.1 Ω R_DS(ON) enable >85% efficiency at full load while maintaining safety margin over 375 V DC bus.

Use Scenario: 200 W open-frame industrial power supply operating in 0–50°C ambient with forced air cooling.

IC Role / Device Role: Main switching transistor in forward converter topology driving center-tapped transformer.

Use Value: 100 W P_D rating and 1.25 °C/W R_th(ch-c) allow sustained operation at 85°C case temperature with minimal thermal derating.

LED Driver Bulk Switch

UPS Inverter Stage

Use Scenario: High-bay LED fixture with active PFC + flyback stage driving 100 W LED load.

IC Role / Device Role: Post-PFC bulk switch handling 400 V DC link voltage in constant-current regulation loop.

Use Value: Low leakage (IDSS ≤10 μA) reduces no-load power consumption below 0.3 W, meeting Energy Star requirements.

Use Scenario: Line-interactive UPS with bidirectional DC-AC inverter stage converting 360 V DC bus to 230 V AC output.

IC Role / Device Role: High-side switch in half-bridge configuration managing reactive power and waveform fidelity.

Use Value: 119 mJ E_AS and 10 mJ EAR ratings ensure reliability during grid fault transitions and load dump events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK50ZFP	500 V V_DSS, 1.2 Ω R_DS(ON), Zener-protected gate, TO-220FP package (non-isolated tab)	Lacks isolated drain tab; requires insulating pad for heatsink mounting	Preferred where gate protection is critical and thermal interface design accommodates isolation hardware
IXTP50N10P	100 V V_DSS, 0.022 Ω R_DS(ON), 50 A I_D, TO-220 package	Not rated for 400 V+ DC bus; unsuitable for offline primary-side use	Only viable in low-voltage DC-DC stages (e.g., point-of-load) where high current and ultra-low R_DS(ON) dominate

Compared with STP6NK50ZFP and IXTP50N10P, TK6P53D(T6RSS-Q) uniquely combines 525 V rating, isolated drain tab, and 1.1 Ω R_DS(ON) in a single TO-220AB footprint - making it optimal for space-constrained, high-reliability offline SMPS where thermal management and voltage margin are co-critical.

Availability

TK6P53D(T6RSS-Q) is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS, LED drivers, and UPS inverters requiring stable component supply across multi-year production cycles.

Supply support for TK6P53D(T6RSS-Q) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with global manufacturing and quality systems certified to ISO 9001 and IATF 16949.

The TK6P53D(T6RSS-Q) belongs to Toshiba's π-MOSⅦ high-voltage power MOSFET product line, engineered specifically for efficiency-critical offline switching power supplies operating from universal AC inputs up to 264 V AC.

FAQ

What is the maximum continuous drain current rating for TK6P53D(T6RSS-Q) at 25°C case temperature?

The TK6P53D(T6RSS-Q) has a DC drain current rating of 6 A at T_c = 25°C. This value is thermally limited - actual usable current must be derated per the R_th(ch-c) = 1.25 °C/W curve and maximum channel temperature of 150°C. At T_c = 85°C, the practical continuous current drops to approximately 4.2 A to maintain safe junction temperature.

Does TK6P53D(T6RSS-Q) have a built-in gate protection diode?

No, the TK6P53D(T6RSS-Q) does not integrate a gate protection Zener diode. Its gate-source voltage rating is ±30 V, and gate leakage is specified at ±1 μA max. External gate clamping (e.g., 18 V Zener) is recommended in noisy environments or when using high-impedance gate drivers to prevent overvoltage damage.

Can TK6P53D(T6RSS-Q) be used in synchronous rectification configurations?

TK6P53D(T6RSS-Q) is not optimized for synchronous rectification due to its relatively high R_DS(ON) and slow body diode (t_rr = 1200 ns). While it can function as a controlled rectifier in low-frequency applications, dedicated low-V_th, low-Q_rr MOSFETs such as Si/SiC Schottky-coordinated devices are preferred for high-efficiency secondary-side switching.

What is the safe operating area (SOA) limitation for TK6P53D(T6RSS-Q) in linear mode?

The TK6P53D(T6RSS-Q) SOA curve (Figure 5) defines maximum pulsed current vs. V_DS for single pulses at T_c = 25°C. In linear (ohmic) operation, power dissipation must remain below 100 W and channel temperature below 150°C. Continuous linear use is discouraged; the device is intended for switching operation only.

Is TK6P53D(T6RSS-Q) RoHS compliant and lead-free?

Yes, TK6P53D(T6RSS-Q) complies with EU RoHS Directive 2011/65/EU and is lead-free. Toshiba confirms halogen-free construction and compliance with J-STD-609 moisture sensitivity level (MSL) 1. Full material declarations and test reports are available upon request from authorized distributors or Toshiba's environmental portal.

TK6P53D(T6RSS-Q) Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: π-MOSVII

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 525 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.3Ohm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 100W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

TK6P53D(T6RSS-Q) FAQ

1.How can I place an order for TK6P53D(T6RSS-Q) through Aetrix?

Please submit a Request for Quotation (RFQ) for TK6P53D(T6RSS-Q) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK6P53D(T6RSS-Q) reliable?

The price and inventory of TK6P53D(T6RSS-Q) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK6P53D(T6RSS-Q) is usually 5 days.

3.What payment methods are accepted for TK6P53D(T6RSS-Q)?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK6P53D(T6RSS-Q) transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK6P53D(T6RSS-Q)?

TK6P53D(T6RSS-Q) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK6P53D(T6RSS-Q) order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK6P53D(T6RSS-Q)?

For technical support, including TK6P53D(T6RSS-Q) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK6P53D(T6RSS-Q) requirements.

6.How does Aetrix verify that TK6P53D(T6RSS-Q) is sourced from the original manufacturer or authorized distributors?

All TK6P53D(T6RSS-Q) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK6P53D(T6RSS-Q) meets industry standards.

7.What is the process for return or replacement of TK6P53D(T6RSS-Q)?

All TK6P53D(T6RSS-Q) units undergo pre-shipment inspection (PSI). If there is an issue with TK6P53D(T6RSS-Q), returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK6P53D(T6RSS-Q) part is unused and in its original packaging.

Return procedure for TK6P53D(T6RSS-Q):

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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