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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK6P60W,RVQ

Name: TK6P60W,RVQ
Brand: Toshiba Semiconductor and Storage
SKU: TK6P60W,RVQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK6P60W,RVQ

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: TK6P60W,RVQ.pdf

Description:: MOSFET N CH 600V 6.2A DPAK

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Product details

Overview

TK6P60W from Toshiba is a silicon N-channel MOSFET using Super Junction DTMOS™ structure, designed as a high-voltage switching element in offline power supplies. It delivers 600 V V_DSS, 6.2 A continuous drain current, and low R_DS(ON) of 0.68 Ω (typ.) at V_GS = 10 V, enabling efficient operation in AC-DC adapters and industrial SMPS.

For engineers reviewing the TK6P60W datasheet, TK6P60W pinout, TK6P60W application, or TK6P60W equivalent, key selection considerations include its DPAK package thermal performance (R_th(ch-c) = 2.09 °C/W), avalanche ruggedness (E_AS = 84 mJ), and gate threshold voltage range (2.7–3.7 V) for reliable drive compatibility with standard PWM controllers.

Technical Context

This device implements Toshiba's DTMOS™ technology to achieve low on-resistance while maintaining high breakdown voltage-critical for reducing conduction losses in 600 V-class flyback and PFC stages. Its enhancement-mode operation and gate charge profile (Q_g = 12 nC typ.) support fast, controllable switching with minimal driver overhead.

The integrated body diode exhibits t_rr = 220 ns (typ.) and Q_rr = 1.6 µC (typ.), making it suitable for hard-switched topologies where reverse recovery behavior directly impacts efficiency and EMI. MOSFET dv/dt ruggedness ≥25 V/ns ensures robustness against parasitic turn-on in high-dV/dt environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports universal-input offline SMPS without derating in 230 VAC mains applications
R_DS(ON)	0.68 Ω (typ.) at V_GS = 10 V - enables <1.5 W conduction loss at 3.1 A, reducing heatsink requirements
I_D (DC)	6.2 A - sufficient for 75–100 W output power in compact adapter designs
E_AS	84 mJ - withstands single-pulse inductive energy during startup or overload without failure
Q_g	12 nC (typ.) - allows clean, low-loss switching with common gate drivers (e.g., UCC27531, TC4420)
t_rr	220 ns (typ.) - limits reverse recovery loss and associated ringing in discontinuous conduction mode
R_th(ch-c)	2.09 °C/W - enables 60 W power dissipation with ≤125 °C case temperature rise under forced-air cooling

Pinout & Package

TK6P60W is housed in a surface-mount DPAK (TOSHIBA 2-7K1S) package with exposed drain pad for thermal conduction to PCB copper. The package weighs 0.36 g and features gull-wing leads compatible with standard reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
1: Gate	Control input	Receives PWM signal; threshold voltage 2.7–3.7 V ensures TTL/CMOS logic-level compatibility
2: Drain (Heatsink)	High-side power node	Internally connected to exposed metal tab; must be soldered to large copper pour for thermal management
3: Source	Power return / reference	Serves as local ground reference for gate drive; connects to source of synchronous rectifier or controller sense resistor

Key Features

Feature	Design Value
Super Junction DTMOS™ structure	Enables 600 V rating with R_DS(ON) 30% lower than planar MOSFETs of same die size, improving power density
Enhancement-mode gate	Guarantees off-state by default; eliminates need for pull-down resistors in most gate-drive configurations
Avalanche-rated design	Specified E_AS = 84 mJ ensures survivability during transient overloads without external snubbers
Low gate charge	Q_g = 12 nC minimizes switching loss and driver power consumption in high-frequency (>100 kHz) converters
ESD-sensitive handling	Requires IEC 61000-4-2 compliant ESD controls during assembly to prevent latent gate oxide damage

Applications

AC-DC Adapters	Industrial SMPS
Use Scenario: 65 W laptop charger operating from 90–264 VAC input with quasi-resonant flyback topology. IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer into transformer; synchronized to QR controller zero-voltage switching detection. Use Value: Low R_DS(ON) reduces conduction loss at peak line, while avalanche rating absorbs leakage inductance spikes without clamping circuitry.	Use Scenario: 100 W open-frame power supply for PLC I/O modules with active PFC front-end and LLC resonant secondary. IC Role / Device Role / Timing Role: PFC boost switch handling continuous 6.2 A current at 100 kHz; driven by dedicated PFC controller (e.g., ICE2PCS01). Use Value: High V_DSS margin and low Q_g enable >95% PFC efficiency across full load range with minimal thermal derating.
LED Driver Power Stages	Server PSU Hold-up Circuits
Use Scenario: Constant-current LED driver for street lighting, accepting 277 VAC input and delivering 350 mA to 48 V string. IC Role / Device Role / Timing Role: Primary-side switch in isolated buck-boost topology; duty cycle modulated for dimming control. Use Value: Fast t_rr and low C_oss reduce switching loss during frequent on/off transitions required for PWM dimming.	Use Scenario: Auxiliary hold-up capacitor charging circuit in 1U server PSU, maintaining 12 V rail during brief AC dropout (10–20 ms). IC Role / Device Role / Timing Role: High-side switch isolating bulk capacitor from DC-DC converter input during normal operation; turned on only during hold-up discharge. Use Value: Rated V_DSS and low leakage (I_DSS ≤10 µA) ensure minimal standby loss and reliable long-term blocking capability.

AC-DC Adapters

Industrial SMPS

Use Scenario: 65 W laptop charger operating from 90–264 VAC input with quasi-resonant flyback topology.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer into transformer; synchronized to QR controller zero-voltage switching detection.

Use Value: Low R_DS(ON) reduces conduction loss at peak line, while avalanche rating absorbs leakage inductance spikes without clamping circuitry.

Use Scenario: 100 W open-frame power supply for PLC I/O modules with active PFC front-end and LLC resonant secondary.

IC Role / Device Role / Timing Role: PFC boost switch handling continuous 6.2 A current at 100 kHz; driven by dedicated PFC controller (e.g., ICE2PCS01).

Use Value: High V_DSS margin and low Q_g enable >95% PFC efficiency across full load range with minimal thermal derating.

LED Driver Power Stages

Server PSU Hold-up Circuits

Use Scenario: Constant-current LED driver for street lighting, accepting 277 VAC input and delivering 350 mA to 48 V string.

IC Role / Device Role / Timing Role: Primary-side switch in isolated buck-boost topology; duty cycle modulated for dimming control.

Use Value: Fast t_rr and low C_oss reduce switching loss during frequent on/off transitions required for PWM dimming.

Use Scenario: Auxiliary hold-up capacitor charging circuit in 1U server PSU, maintaining 12 V rail during brief AC dropout (10–20 ms).

IC Role / Device Role / Timing Role: High-side switch isolating bulk capacitor from DC-DC converter input during normal operation; turned on only during hold-up discharge.

Use Value: Rated V_DSS and low leakage (I_DSS ≤10 µA) ensure minimal standby loss and reliable long-term blocking capability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V, 6 A, R_DS(ON) = 0.75 Ω (typ.), TO-220FP package, higher R_th(j-c) = 2.5 °C/W	Requires larger heatsink due to higher thermal resistance; not surface-mount	Preferred when through-hole mounting and legacy board layout constrain package choice
IPP60R099CP	600 V, 6.2 A, R_DS(ON) = 0.099 Ω (typ.), TO-220 package, 10× lower R_DS(ON) but higher cost and Q_g = 38 nC	Better conduction efficiency but demands stronger gate driver and increases switching loss at high frequency	Selected when system prioritizes ultra-low conduction loss over switching speed and cost sensitivity

Compared with STP6NK60ZFP and IPP60R099CP, the TK6P60W offers optimal balance of low R_DS(ON), moderate Q_g, and DPAK thermal performance-making it ideal for space-constrained, cost-sensitive 65–100 W offline converters where PCB real estate and thermal management are critical.

Availability

TK6P60W is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS, and LED driver power stages requiring stable component supply, long-lifecycle availability, and RoHS-compliant sourcing.

Supply support for TK6P60W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The TK6P60W belongs to Toshiba's DTMOS™ IV family of high-voltage super-junction MOSFETs, engineered specifically for high-efficiency, high-reliability offline power conversion in consumer, industrial, and lighting applications.

FAQ

What is the maximum continuous drain current rating for TK6P60W?

The TK6P60W has a maximum continuous drain current (I_D) of 6.2 A at T_c = 25 °C. This rating assumes proper PCB thermal design with adequate copper area under the drain pad. At elevated case temperatures, the current must be derated per the Safe Operating Area curve in Figure 8.17 of the TK6P60W datasheet, with 0 A allowed at T_c = 150 °C.

Does TK6P60W support logic-level gate drive?

The TK6P60W is not a logic-level MOSFET. Its gate threshold voltage (V_th) ranges from 2.7 V to 3.7 V, and it is specified for R_DS(ON) at V_GS = 10 V. For reliable enhancement-mode operation with low on-resistance, a 10 V gate drive is recommended. Driving it with 5 V may result in incomplete turn-on and excessive conduction loss.

What is the avalanche energy rating of TK6P60W and how is it tested?

The TK6P60W is rated for single-pulse avalanche energy (E_AS) of 84 mJ. This value is measured under standardized conditions: V_DD = 90 V, T_ch = 25 °C (initial), L = 57.6 mH, R_G = 25 Ω, and I_AR = 1.6 A (Note 2 in Absolute Maximum Ratings). It reflects the device's ability to absorb inductive energy without failure during transient overloads.

Can TK6P60W be used in place of a TO-220 MOSFET in an existing design?

Replacing a TO-220 MOSFET with TK6P60W requires careful PCB layout revision due to its DPAK (2-7K1S) footprint and thermal path. While both packages support similar voltage/current ratings, the TK6P60W relies on PCB copper for heatsinking rather than an external heatsink. Thermal simulation and validation of channel temperature under worst-case load are essential before substitution.

Is TK6P60W RoHS compliant and halogen-free?

Yes, the TK6P60W meets RoHS Directive 2011/65/EU requirements and is halogen-free per J-STD-709 definition. Toshiba confirms compliance in its official environmental documentation, and the device carries appropriate marking per JEDEC standards. Aetrix Electronics provides full material declarations and test reports upon request for qualifying customers.

TK6P60W,RVQ Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSIV

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 6.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 820mOhm @ 3.1A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 310µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 390 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

TK6P60W,RVQ FAQ

1.How can I place an order for TK6P60W,RVQ through Aetrix?

Please submit a Request for Quotation (RFQ) for TK6P60W,RVQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK6P60W,RVQ reliable?

The price and inventory of TK6P60W,RVQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK6P60W,RVQ is usually 5 days.

3.What payment methods are accepted for TK6P60W,RVQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK6P60W,RVQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK6P60W,RVQ?

TK6P60W,RVQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK6P60W,RVQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK6P60W,RVQ?

For technical support, including TK6P60W,RVQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK6P60W,RVQ requirements.

6.How does Aetrix verify that TK6P60W,RVQ is sourced from the original manufacturer or authorized distributors?

All TK6P60W,RVQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK6P60W,RVQ meets industry standards.

7.What is the process for return or replacement of TK6P60W,RVQ?

All TK6P60W,RVQ units undergo pre-shipment inspection (PSI). If there is an issue with TK6P60W,RVQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK6P60W,RVQ part is unused and in its original packaging.

Return procedure for TK6P60W,RVQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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