Toshiba Semiconductor and Storage TK6Q60W,S1VQ

Overview

TK6Q60W from Toshiba is a silicon N-channel MOSFET using Super Junction DTMOS™ structure, designed as a high-voltage switching device in offline AC-DC power supplies and DC-DC converters. It delivers 600 V V_DSS, 6.2 A continuous drain current (T_C = 25 °C), and low R_DS(ON) of 0.68 Ω (typ.) at V_GS = 10 V - enabling efficient operation in 65–100 W SMPS designs.

For engineers reviewing the TK6Q60W datasheet, TK6Q60W pinout, TK6Q60W application, or TK6Q60W equivalent, key selection criteria include avalanche ruggedness (E_AS = 84 mJ), MOSFET dv/dt immunity (≥25 V/ns), gate charge profile (Q_g = 12 nC), and thermal resistance (R_th(ch-c) = 2.09 °C/W) for heatsink-integrated board layouts.

Technical Context

This device implements Toshiba's DTMOS™ IV process with optimized cell pitch and trench depth to reduce specific on-resistance while maintaining 600 V breakdown capability. Its enhancement-mode threshold voltage (V_th = 2.7–3.7 V) ensures reliable turn-on with standard 5 V or 10 V gate drivers, and its integrated body diode supports flyback and LLC resonant topologies.

The IPAK package features Drain-connected tab (Pin 2) for direct heatsinking, minimizing thermal impedance path from channel to case. Dynamic characteristics - including C_iss = 390 pF, C_oss = 12 pF, and Q_gd/Q_gs1 = 6/3 nC - support high-frequency switching up to 100 kHz with controlled EMI and low switching loss.

Key Specifications

Pinout & Package

TK6Q60W uses the IPAK (TOSHIBA 2-7L1A) package - a 3-pin through-hole thermally enhanced outline with exposed Drain tab for direct heatsink mounting. Weight is 0.337 g (typ.).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP6NK60ZFP and IPP60R099C6, the TK6Q60W offers balanced trade-offs: superior avalanche ruggedness versus ST's part and lower gate charge than Infineon's CoolMOS™, making it optimal for cost-sensitive, thermally constrained 65–100 W flyback adapters requiring field-proven reliability.

Availability

TK6Q60W is available at Aetrix Electronics and suitable for AC-DC adapters, industrial flyback SMPS, LED drivers, and isolated DC-DC converters requiring stable component supply and long-term manufacturability.

Supply support for TK6Q60W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on energy efficiency and industrial reliability.

The TK6Q60W belongs to Toshiba's DTMOS™ IV high-voltage MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in consumer and industrial equipment.

FAQ

What is the maximum continuous drain current rating for TK6Q60W?

The TK6Q60W has a maximum continuous drain current (I_D) of 6.2 A at case temperature T_C = 25 °C. This rating assumes proper heatsinking - derating applies above 25 °C per the R_th(ch-c) = 2.09 °C/W thermal resistance. At T_C = 100 °C, the usable I_D drops to approximately 3.5 A. Always verify junction temperature using actual layout and thermal interface conditions in your design.

Does TK6Q60W have an integrated body diode, and what are its recovery characteristics?

Yes, the TK6Q60W includes an integrated body diode rated for 6.2 A DC reverse current. Its reverse recovery time (t_rr) is 220 ns (typ.) at I_DR = 3.1 A and dI_DR/dt = 100 A/µs, with Q_rr = 1.6 µC (typ.). These values support operation in flyback and forward converters without external diode replacement, though soft-recovery diodes may be added for EMI reduction in critical designs.

What is the gate threshold voltage range for TK6Q60W, and how does it affect drive compatibility?

The TK6Q60W has a gate threshold voltage (V_th) range of 2.7 V to 3.7 V (measured at V_DS = 10 V, I_D = 0.31 mA). This ensures reliable turn-on with standard 3.3 V logic-level drivers and full enhancement with 5 V or 10 V gate drive. The narrow V_th spread minimizes unit-to-unit variation in switching timing, supporting stable operation across temperature and production lots.

Is TK6Q60W suitable for avalanche-prone topologies like hard-switched flyback?

Yes, the TK6Q60W is explicitly rated for single-pulse avalanche energy (E_AS) of 84 mJ at T_ch = 25 °C. This specification validates its use in hard-switched flyback converters where leakage inductance causes voltage overshoot. Designers must ensure peak channel temperature remains ≤150 °C and limit repetitive avalanche events per the Toshiba Reliability Handbook guidelines.

What package type does TK6Q60W use, and how is thermal management implemented?

The TK6Q60W uses the IPAK (TOSHIBA 2-7L1A) package - a 3-pin through-hole outline with Pin 2 (Drain) electrically and thermally connected to the exposed metal tab. This allows direct mounting to a heatsink, achieving R_th(ch-c) = 2.09 °C/W. PCB copper area under the tab and thermal interface material significantly impact real-world thermal performance; refer to Toshiba's recommended footprint and mounting instructions.