Toshiba Semiconductor and Storage TK6R7A10PL,S4X

Overview

TK6R7A10PL,S4X from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in the U-MOS-H process, designed for high-efficiency switching in DC-DC converters and motor drivers. It delivers R_DS(ON) = 5.7 mΩ (typ.) at V_GS = 10 V, Q_SW = 17 nC (typ.), Q_oss = 58 nC (typ.), and supports 100 V V_DSS, 56 A I_D (DC), and 175 °C channel temperature.

For engineers reviewing the TK6R7A10PL,S4X datasheet, TK6R7A10PL,S4X pinout, TK6R7A10PL,S4X application, or TK6R7A10PL,S4X equivalent, key selection criteria include low conduction loss, fast switching with minimal gate charge, thermal robustness in TO-220SIS package, and suitability for high-current industrial power stages requiring stable avalanche energy rating (E_AS = 57 mJ).

Technical Context

This MOSFET employs Toshiba's U-MOS-H trench-gate structure to achieve low R_DS(ON) and reduced output charge. Its enhancement-mode operation (V_th = 1.5–2.5 V) enables direct drive from standard logic-level controllers, while the integrated body diode supports synchronous rectification and freewheeling in buck and half-bridge topologies.

The device features guaranteed single-pulse avalanche capability (I_AS = 56 A, E_AS = 57 mJ) and low C_iss = 3455 pF with C_rss = 30 pF - critical for minimizing Miller-induced shoot-through and improving hard-switching efficiency in 100 kHz–500 kHz power supplies.

Key Specifications

Pinout & Package

Package: TO-220SIS (TOSHIBA 2-10U1S), isolated case, through-hole mounting, 1.56 g typical weight, 2000 V_RMS isolation rating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP110N10F7 and IRF3205PBF, TK6R7A10PL,S4X delivers lower R_DS(ON), significantly reduced Q_SW and Q_oss, certified isolation, and guaranteed avalanche ruggedness - making it optimal for high-reliability, high-efficiency 48–100 V industrial power stages where thermal and electrical stress margins are critical.

Availability

TK6R7A10PL,S4X is available at Aetrix Electronics and suitable for high-efficiency DC-DC converters, switching voltage regulators, and motor drivers requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for TK6R7A10PL,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, headquartered in Japan with ISO/TS 16949-certified production facilities.

The TK6R7A10PL,S4X belongs to Toshiba's U-MOS-H high-voltage power MOSFET product line, engineered specifically for high-current, high-efficiency industrial and automotive-grade power conversion systems demanding low R_DS(ON), fast switching, and robust avalanche performance.

FAQ

What is the maximum continuous drain current rating for TK6R7A10PL,S4X?

The TK6R7A10PL,S4X has a maximum continuous drain current (I_D) of 56 A at case temperature T_c = 25 °C. This rating assumes adequate heatsinking and derates linearly with increasing case temperature - for example, to ~32 A at T_c = 100 °C per the safe operating area curve. The device also supports 300 A pulsed drain current (I_DP) for t = 100 µs.

Does TK6R7A10PL,S4X have an isolated package, and what is its isolation voltage rating?

Yes, TK6R7A10PL,S4X uses the TO-220SIS package with electrically isolated metal tab. Its isolation voltage rating is 2000 V_RMS, verified per safety standards. This allows direct mounting to grounded heat sinks without additional insulating hardware, simplifying thermal design in high-voltage industrial inverters and power supplies.

What gate drive voltage is required to fully enhance TK6R7A10PL,S4X?

TK6R7A10PL,S4X is fully enhanced at V_GS = 10 V, where R_DS(ON) reaches its specified 5.7 mΩ (typ.). Its gate threshold voltage (V_th) ranges from 1.5 V to 2.5 V, enabling reliable turn-on with 3.3 V or 5 V logic-level drivers - though full conduction requires ≥8 V to minimize R_DS(ON) variation across temperature and unit-to-unit spread.

Is TK6R7A10PL,S4X suitable for avalanche-rated applications like motor control?

Yes, TK6R7A10PL,S4X is explicitly characterized for single-pulse avalanche operation with E_AS = 57 mJ and I_AS = 56 A under defined test conditions (V_DD ≈ 80 V, L = 14 µH). This makes it suitable for inductive load switching in motor drivers and DC-DC converters where unclamped inductive energy must be safely absorbed by the MOSFET itself.

What is the thermal resistance from channel to case (R_th(ch-c)) for TK6R7A10PL,S4X?

The channel-to-case thermal resistance (R_th(ch-c)) of TK6R7A10PL,S4X is 3.57 °C/W maximum. This value is measured under standardized JEDEC conditions and enables accurate junction temperature estimation when mounted on a heatsink with known thermal interface resistance - critical for validating thermal design in high-power applications such as 3 kW motor drives.