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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK72A08N1,S4X

Name: TK72A08N1,S4X
Brand: Toshiba Semiconductor and Storage
SKU: TK72A08N1,S4X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK72A08N1,S4X

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: TK72A08N1,S4X.pdf

Description:: MOSFET N-CH 75V 80A TO220SIS

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Product details

Overview

TK72A08N1,S4X from Toshiba is a silicon N-channel power MOSFET in U-MOSⅧ-H technology, designed as a high-current, low-R_DS(ON) switching element for DC-DC converters and motor drives. It delivers 157 A DC drain current at T_c = 25°C, features R_DS(ON) = 3.7 mΩ (typ.) at V_GS = 10 V, and supports 80 V drain-source breakdown voltage - enabling efficient operation in industrial switching regulators.

For engineers reviewing the TK72A08N1,S4X datasheet, TK72A08N1,S4X pinout, TK72A08N1,S4X application, or TK72A08N1,S4X equivalent, key selection criteria include its TO-220SIS package thermal performance (R_th(ch-c) = 2.77°C/W), avalanche ruggedness (E_AS = 161 mJ), and gate charge profile (Q_g = 81 nC) for optimized hard-switching efficiency.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H process to achieve ultra-low on-resistance while maintaining robust avalanche capability and fast switching dynamics. Its enhancement-mode threshold (V_th = 2.0–4.0 V) ensures reliable gate drive compatibility with standard 10 V logic-level controllers.

The device integrates a built-in body diode with reverse recovery time t_rr = 77 ns (typ.) and Q_rr = 150 nC (typ.), supporting synchronous rectification and freewheeling in high-frequency buck converters. Thermal design is anchored by channel-to-case resistance of 2.77°C/W and a maximum channel temperature rating of 150°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	80 V - Maximum blocking voltage for use in 48 V bus and 60 V transient-tolerant systems
R_DS(ON) (typ.)	3.7 mΩ at V_GS = 10 V - Enables <1.4 W conduction loss at 60 A, critical for high-efficiency power stages
I_D (DC)	157 A at T_c = 25°C - Supports high-current output stages without parallel devices in compact designs
E_AS	161 mJ - Confirmed single-pulse avalanche energy allows safe operation under inductive load switching stress
Q_g	81 nC - Total gate charge determines required driver strength and switching loss in hard-switched topologies
t_r/t_f	19 ns / 28 ns - Fast rise/fall times support >500 kHz switching frequencies with minimized dead-time losses
R_th(ch-c)	2.77°C/W - Enables direct heatsink mounting with predictable thermal margin up to 100 W dissipation

Pinout & Package

TK72A08N1,S4X is housed in a TO-220SIS (JEITA SC-67, Toshiba 2-10U1S) package with isolated tab - electrically isolating the drain from the heatsink mounting surface. The package weighs 1.7 g and features screw-hole-compatible leadframe geometry for mechanical stability in high-vibration environments.

Pin/Terminal	Circuit Role	Design Meaning
1: Gate	Control electrode	Receives 2.0–4.0 V threshold signal; requires ≤81 nC charge for full enhancement; ESD-sensitive (handle per JESD22-A114)
2: Drain	High-side power terminal	Connected to input bus or inductive load return; electrically isolated from tab in TO-220SIS configuration
3: Source	Power return and reference node	Serves as common return for gate drive and load current; defines local ground for driver IC placement

Key Features

Feature	Design Value
Ultra-low R_DS(ON)	3.7 mΩ typ. at V_GS = 10 V reduces conduction loss by >30% vs. legacy U-MOSⅦ equivalents in 80 V class
Avalanche-rated structure	Guaranteed 161 mJ single-pulse energy enables robust operation without external snubbers in flyback or motor phase-legs
Fast body diode	77 ns reverse recovery time and 150 nC Q_rr minimize commutation loss in synchronous rectifier and half-bridge freewheeling
Thermally optimized package	2.77°C/W channel-to-case resistance supports >100 W continuous dissipation with standard extruded heatsinks
Enhancement-mode gate	2.0–4.0 V V_th ensures clean turn-on with industry-standard 5 V/10 V gate drivers and avoids unintended conduction

Applications

Server VRMs	Industrial Motor Drives
Use Scenario: High-density 48 V input buck converters delivering >200 A to CPU/GPU cores in datacenter servers. IC Role / Device Role / Timing Role: Primary high-side switch in multiphase synchronous buck topology operating at 300–600 kHz. Use Value: 3.7 mΩ R_DS(ON) and 81 nC Q_g enable >95% efficiency at 200 A while minimizing thermal footprint per phase.	Use Scenario: Inverter leg switch for 3 kW permanent magnet AC servo drives in CNC machinery. IC Role / Device Role / Timing Role: Low-side switching element handling 150 A peak current with 77 ns body diode recovery during PWM commutation. Use Value: 161 mJ E_AS withstands inductive kickback during emergency stop, eliminating need for external clamping diodes.
Telecom Power Supplies	Renewable Energy Inverters
Use Scenario: 48 V intermediate bus converter in 5G base station power shelves requiring high reliability over 10-year field life. IC Role / Device Role / Timing Role: Main switch in phase-shifted full-bridge topology with ZVS-assisted turn-on. Use Value: 2.77°C/W R_th(ch-c) maintains T_ch < 125°C under full load at 60°C ambient, meeting Telcordia GR-1089 thermal derating requirements.	Use Scenario: DC link switch in string-level solar microinverters converting 60–80 V PV input to grid-synchronized AC. IC Role / Device Role / Timing Role: Unidirectional switch in H-bridge output stage managing bidirectional reactive power flow. Use Value: 80 V V_DSS provides 20% margin above 64 V max PV open-circuit voltage, ensuring long-term insulation integrity in humid outdoor environments.

Server VRMs

Industrial Motor Drives

Use Scenario: High-density 48 V input buck converters delivering >200 A to CPU/GPU cores in datacenter servers.

IC Role / Device Role / Timing Role: Primary high-side switch in multiphase synchronous buck topology operating at 300–600 kHz.

Use Value: 3.7 mΩ R_DS(ON) and 81 nC Q_g enable >95% efficiency at 200 A while minimizing thermal footprint per phase.

Use Scenario: Inverter leg switch for 3 kW permanent magnet AC servo drives in CNC machinery.

IC Role / Device Role / Timing Role: Low-side switching element handling 150 A peak current with 77 ns body diode recovery during PWM commutation.

Use Value: 161 mJ E_AS withstands inductive kickback during emergency stop, eliminating need for external clamping diodes.

Telecom Power Supplies

Renewable Energy Inverters

Use Scenario: 48 V intermediate bus converter in 5G base station power shelves requiring high reliability over 10-year field life.

IC Role / Device Role / Timing Role: Main switch in phase-shifted full-bridge topology with ZVS-assisted turn-on.

Use Value: 2.77°C/W R_th(ch-c) maintains T_ch < 125°C under full load at 60°C ambient, meeting Telcordia GR-1089 thermal derating requirements.

Use Scenario: DC link switch in string-level solar microinverters converting 60–80 V PV input to grid-synchronized AC.

IC Role / Device Role / Timing Role: Unidirectional switch in H-bridge output stage managing bidirectional reactive power flow.

Use Value: 80 V V_DSS provides 20% margin above 64 V max PV open-circuit voltage, ensuring long-term insulation integrity in humid outdoor environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH160N075L2	75 V V_DSS, 1.9 mΩ R_DS(ON), TO-247 package, higher Q_g (120 nC)	Requires larger PCB area and different heatsink interface; better for <500 kHz, lower-loss priority	Choose when lowest possible conduction loss dominates over gate drive complexity and layout space
STP155NF08	80 V V_DSS, 4.5 mΩ R_DS(ON), TO-220FP package, no isolation, lower E_AS (110 mJ)	Limited to non-isolated heatsink mounting; reduced avalanche margin in motor fault conditions	Choose for cost-sensitive industrial SMPS where thermal isolation is not required and fault energy is controlled

Compared with IXTH160N075L2 and STP155NF08, TK72A08N1,S4X uniquely balances low R_DS(ON), TO-220SIS isolation, and high E_AS - making it optimal for space-constrained, thermally demanding, and fault-rugged applications like server VRMs and servo inverters.

Availability

TK72A08N1,S4X is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, and telecom power supplies requiring stable component supply, long-lifecycle assurance, and RoHS-compliant sourcing.

Supply support for TK72A08N1,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with deep expertise in silicon power MOSFET process innovation.

TK72A08N1,S4X belongs to Toshiba's U-MOSⅧ-H high-efficiency power MOSFET family, engineered specifically for high-current, high-frequency switching applications in computing, industrial automation, and communications infrastructure.

FAQ

What is the maximum continuous drain current rating for TK72A08N1,S4X?

The TK72A08N1,S4X is rated for 157 A DC drain current at case temperature T_c = 25°C. This rating assumes proper heatsinking and is limited by silicon capability - the package itself is rated to 100 A. At elevated case temperatures, current must be derated per the Safe Operating Area curve in Figure 8.13 of the official datasheet.

Does TK72A08N1,S4X have an isolated drain tab?

Yes, TK72A08N1,S4X uses the TO-220SIS package, which features an electrically isolated drain tab. Unlike standard TO-220, this isolation allows direct mounting to a common heatsink without requiring insulating hardware - simplifying thermal design while maintaining electrical separation between drain and chassis ground.

What is the typical gate charge requirement for TK72A08N1,S4X?

The TK72A08N1,S4X has a typical total gate charge (Q_g) of 81 nC at V_DD ≈ 64 V and I_D = 72 A. This value includes 29 nC for gate-source charge (Q_gs1) and 21 nC for gate-drain charge (Q_gd). Designers should size gate drivers to deliver this charge within target switching times while limiting peak current to avoid overshoot.

How does the body diode performance of TK72A08N1,S4X compare to standard MOSFETs?

The TK72A08N1,S4X body diode exhibits t_rr = 77 ns and Q_rr = 150 nC (typ.) at I_DR = 72 A and dI/dt = 100 A/µs. These values are optimized for synchronous rectification and reduce reverse recovery loss significantly versus older U-MOS generations - especially critical in high-frequency buck and LLC resonant converters.

Is TK72A08N1,S4X compliant with RoHS directives?

Yes, TK72A08N1,S4X is RoHS compliant per EU Directive 2011/65/EU. The marking indicates [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]], depending on the specific lot. Full environmental compliance documentation, including substance declarations and test reports, is available through Toshiba's official sales channels and authorized distributors.

TK72A08N1,S4X Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSVIII-H

Package/Case:: TO-220-3 Full Pack

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 175 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8200 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220SIS

TK72A08N1,S4X FAQ

1.How can I place an order for TK72A08N1,S4X through Aetrix?

Please submit a Request for Quotation (RFQ) for TK72A08N1,S4X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK72A08N1,S4X reliable?

The price and inventory of TK72A08N1,S4X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK72A08N1,S4X is usually 5 days.

3.What payment methods are accepted for TK72A08N1,S4X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK72A08N1,S4X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK72A08N1,S4X?

TK72A08N1,S4X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK72A08N1,S4X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK72A08N1,S4X?

For technical support, including TK72A08N1,S4X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK72A08N1,S4X requirements.

6.How does Aetrix verify that TK72A08N1,S4X is sourced from the original manufacturer or authorized distributors?

All TK72A08N1,S4X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK72A08N1,S4X meets industry standards.

7.What is the process for return or replacement of TK72A08N1,S4X?

All TK72A08N1,S4X units undergo pre-shipment inspection (PSI). If there is an issue with TK72A08N1,S4X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK72A08N1,S4X part is unused and in its original packaging.

Return procedure for TK72A08N1,S4X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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