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Toshiba Semiconductor and Storage TK72A12N1,S4X
- Part No.:
- TK72A12N1,S4X
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
TK72A12N1,S4X.pdf
- Description:
- MOSFET N-CH 120V 72A TO220SIS
- Quantity:
- Payment:
- Shipping:
Inventory:5,341
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Product details
Overview
TK72A12N1,S4X from Toshiba is a silicon N-channel power MOSFET in U-MOSⅧ-H process, designed as a high-current, low-RDS(ON) switching element for DC-DC converters and motor drives. It delivers 179 A DC drain current, 120 V drain-source breakdown voltage, and typ. 3.7 mΩ on-resistance at VGS = 10 V, enabling high-efficiency operation in industrial switching regulators.
For engineers reviewing the TK72A12N1,S4X datasheet, TK72A12N1,S4X pinout, TK72A12N1,S4X application, or TK72A12N1,S4X equivalent, key selection criteria include avalanche ruggedness (256 mJ), gate charge (130 nC), thermal resistance (2.77 °C/W ch-to-case), and TO-220SIS package compatibility with high-power heatsinking requirements.
Technical Context
This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate structure to achieve ultra-low conduction loss while maintaining robust avalanche capability and fast switching performance. Its enhancement-mode threshold (2.0–4.0 V) ensures reliable gate drive compatibility with standard 10 V logic-level controllers.
Designed for hard-switched topologies, it features low reverse transfer capacitance (30 pF) and optimized gate charge distribution (Qgd = 34 nC), supporting efficient synchronous rectification and high-frequency PWM operation up to several hundred kHz in buck and half-bridge configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 120 V - Withstands up to 120 V drain-source voltage, suitable for 48 V input bus systems with safety margin. |
| RDS(ON) (typ.) | 3.7 mΩ at VGS = 10 V - Enables <1 W conduction loss at 17 A continuous current, critical for thermal management. |
| ID (DC) | 179 A at Tc = 25 °C - Supports high-output power supplies without parallel devices in properly heatsinked designs. |
| EAS | 256 mJ - Rated single-pulse avalanche energy allows safe operation under inductive switching stress without snubbers. |
| Qg | 130 nC - Total gate charge determines driver strength requirement; compatible with standard 1–2 A peak gate drivers. |
| Rth(ch-c) | 2.77 °C/W - Low channel-to-case thermal resistance enables direct mounting to heatsinks for stable 150 °C channel operation. |
| Ciss | 8100 pF - Input capacitance impacts gate drive loop stability and turn-on delay in high-frequency applications. |
Pinout & Package
TK72A12N1,S4X is housed in a TO-220SIS (JEITA SC-67 / Toshiba 2-10U1S) package - a surface-mount-compatible variant of TO-220 with isolated tab, rated for 1.7 g mass and optimized for automated assembly and thermal interface reliability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control terminal | Receives gate drive signal; requires ≤±20 V rating and low-impedance path to minimize switching losses. |
| 2 (Drain) | High-side power terminal | Connected to input bus or inductive load return; electrically tied to metal tab for thermal conduction. |
| 3 (Source) | Power reference node | Serves as return path for load current and gate drive reference; must be low-inductance for stable switching. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(ON) | 3.7 mΩ typ. at 10 V drive reduces conduction loss by >30% vs. legacy U-MOS VI devices in same package. |
| Avalanche-rated design | 256 mJ single-pulse EAS supports unclamped inductive switching in motor control and SMPS without external protection. |
| Low Qgd/Qg ratio | 34 nC/130 nC = 0.26 - Improves Miller immunity and enables faster, more controllable turn-off in hard-switched circuits. |
| Enhancement-mode Vth | 2.0–4.0 V range ensures reliable turn-on with standard logic-level drivers while preventing accidental activation. |
| RoHS-compliant marking | Underlined Lot No. indicates [[G]]/RoHS COMPATIBLE version - meets EU Directive 2011/65/EU for hazardous substance restriction. |
Applications
| Server VRM Power Stage | Industrial DC-DC Converter |
|---|---|
Use Scenario: High-current CPU/GPU voltage regulation in datacenter servers operating at 0.8–1.2 V output with >200 A load steps. IC Role / Device Role / Timing Role: Synchronous rectifier switch in multiphase buck converter, conducting during low-side interval. Use Value: 3.7 mΩ RDS(ON) minimizes I²R loss at high load currents, directly improving conversion efficiency and reducing heatsink size. |
Use Scenario: 48 V to 12 V step-down conversion for PLC I/O modules and factory automation controllers. IC Role / Device Role / Timing Role: Primary high-side switch in isolated forward or non-isolated buck topology handling 10–30 A continuous output. Use Value: 179 A DC rating and 2.77 °C/W thermal resistance allow full-load operation without derating in compact chassis-mounted designs. |
| Brushless DC Motor Inverter | UPS Output Stage |
Use Scenario: 3-phase inverter driving 1–3 kW BLDC motors in HVAC compressors and industrial pumps. IC Role / Device Role / Timing Role: Low-side switching element in 6-pack IGBT/MOSFET bridge, commutated at 8–20 kHz. Use Value: 256 mJ avalanche energy absorbs flyback energy during PWM dead-time transitions, eliminating need for external clamps. |
Use Scenario: Online double-conversion UPS delivering clean 230 V AC output from battery-backed DC bus during grid failure. IC Role / Device Role / Timing Role: DC-link switch in bidirectional DC-AC inverter stage, conducting high pulsed currents during battery discharge. Use Value: 355 A pulsed drain current rating supports surge loads up to 3× nominal, ensuring uninterrupted power delivery during transient events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW72N120K5 | 1200 V rating, 72 mΩ RDS(ON), TO-247 package - higher voltage class, significantly higher on-resistance. | Targeted at 800 V PV inverters and industrial AC drives, not 48–120 V DC-DC or motor control. | Select only if system requires >600 V blocking capability; unsuitable as direct replacement due to voltage/resistance mismatch. |
| IXTH72N10L2 | 100 V VDSS, 4.2 mΩ RDS(ON), TO-247 - lower voltage rating, slightly higher on-resistance, larger package. | Optimized for 24–48 V telecom rectifiers and battery systems where 120 V margin is unnecessary. | Consider when board layout allows TO-247 and 100 V rating suffices; not pin-compatible or thermally equivalent to TK72A12N1,S4X. |
Compared with STW72N120K5 and IXTH72N10L2, TK72A12N1,S4X uniquely balances 120 V rating, sub-4 mΩ conduction loss, and TO-220SIS thermal performance - making it optimal for space-constrained, high-efficiency 48 V industrial power stages where voltage margin and thermal density are both critical.
Availability
TK72A12N1,S4X is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and BLDC motor inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for TK72A12N1,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with decades of expertise in discrete power MOSFET innovation.
TK72A12N1,S4X belongs to Toshiba's U-MOSⅧ-H high-efficiency power MOSFET product line, engineered specifically for high-current, high-frequency switching applications in industrial power supplies and motor control systems.
FAQ
What is the maximum continuous drain current rating for TK72A12N1,S4X?
The TK72A12N1,S4X is rated for 179 A DC drain current at case temperature Tc = 25 °C. This rating assumes adequate heatsinking and is limited by silicon capability - the package itself is rated for 100 A per absolute maximum ratings note. Derating is required above 25 °C case temperature per the Rth(ch-c) = 2.77 °C/W specification.
Does TK72A12N1,S4X support avalanche operation, and what is its rated energy?
Yes, TK72A12N1,S4X is fully rated for single-pulse avalanche operation with EAS = 256 mJ at Tch = 25 °C. This value is measured under standardized conditions (VDD = 80 V, L = 48.3 µH, IAR = 72 A) and enables reliable unclamped inductive switching in motor drives and SMPS without external snubbers.
What is the gate threshold voltage range for TK72A12N1,S4X, and how does it affect drive requirements?
The TK72A12N1,S4X has a gate threshold voltage Vth of 2.0–4.0 V (measured at VDS = 10 V, ID = 1.0 mA). This enhancement-mode range ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers while preventing false triggering from noise or leakage - no negative bias is required for off-state security.
Is TK72A12N1,S4X RoHS compliant, and how is compliance indicated on the device?
Yes, TK72A12N1,S4X is RoHS compliant. Compliance is indicated by an underlined lot number on the device marking, signifying [[G]]/RoHS COMPATIBLE per EU Directive 2011/65/EU. Non-underlined markings indicate lead-containing versions; always verify marking per shipment documentation.
What package type does TK72A12N1,S4X use, and how does it differ from standard TO-220?
TK72A12N1,S4X uses the TO-220SIS package (JEITA SC-67 / Toshiba 2-10U1S), which features an electrically isolated metal tab - unlike standard TO-220 where the tab is internally connected to the drain. This isolation enables direct heatsink mounting without insulating hardware, simplifying thermal design and improving reliability in high-voltage applications.
TK72A12N1,S4X Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- U-MOSVIII-H
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 120 V
- Current - Continuous Drain (Id) @ 25°C:
- 72A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4.5mOhm @ 36A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 130 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 8100 pF @ 60 V
- FET Feature:
- -
- Power Dissipation (Max):
- 45W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220SIS
TK72A12N1,S4X FAQ
1.How can I place an order for TK72A12N1,S4X through Aetrix?
Please submit a Request for Quotation (RFQ) for TK72A12N1,S4X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK72A12N1,S4X reliable?
The price and inventory of TK72A12N1,S4X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK72A12N1,S4X is usually 5 days.
3.What payment methods are accepted for TK72A12N1,S4X?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK72A12N1,S4X transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK72A12N1,S4X?
TK72A12N1,S4X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK72A12N1,S4X order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK72A12N1,S4X?
For technical support, including TK72A12N1,S4X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK72A12N1,S4X requirements.
6.How does Aetrix verify that TK72A12N1,S4X is sourced from the original manufacturer or authorized distributors?
All TK72A12N1,S4X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK72A12N1,S4X meets industry standards.
7.What is the process for return or replacement of TK72A12N1,S4X?
All TK72A12N1,S4X units undergo pre-shipment inspection (PSI). If there is an issue with TK72A12N1,S4X, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK72A12N1,S4X part is unused and in its original packaging.
Return procedure for TK72A12N1,S4X:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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