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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK72E08N1,S1X

Name: TK72E08N1,S1X
Brand: Toshiba Semiconductor and Storage
SKU: TK72E08N1,S1X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK72E08N1,S1X

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: TK72E08N1,S1X.pdf

Description:: MOSFET N-CH 80V 72A TO220

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Product details

Overview

TK72E08N1,S1X from Toshiba is an N-channel silicon power MOSFET in the U-MOSⅧ-H series, designed for high-current DC-DC switching applications. It delivers 80 V V_DSS, 3.6 mΩ R_DS(ON) (typ. at V_GS = 10 V), and 157 A continuous drain current with TO-220 package thermal performance optimized for voltage regulator output stages.

For engineers reviewing the TK72E08N1,S1X datasheet, TK72E08N1,S1X pinout, TK72E08N1,S1X application, or TK72E08N1,S1X equivalent, key selection criteria include its low on-resistance under high-current conduction, avalanche ruggedness (161 mJ single-pulse), and gate charge profile (81 nC total) for synchronous buck converter efficiency and thermal management.

Technical Context

This MOSFET operates in enhancement mode with a gate threshold voltage of 2.0–4.0 V and supports fast switching via low input capacitance (5500 pF) and reverse transfer capacitance (38 pF). Its internal structure features optimized cell layout for reduced channel resistance and improved safe operating area (SOA) up to 150 °C channel temperature.

The device integrates a built-in body diode with 77 ns reverse recovery time and 150 nC Q_rr, enabling use in freewheeling paths without external diodes in hard-switched topologies. Thermal design relies on direct heatsink mounting via the drain-connected tab (R_th(ch–c) = 0.65 °C/W).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	80 V - Maximum blocking voltage for primary-side switch in 48 V input systems or secondary-side sync rectifier in 64 V bus designs.
R_DS(ON)	3.6 mΩ (typ.) at V_GS = 10 V - Enables <1.3 W conduction loss at 60 A DC, critical for high-efficiency VRM/VRD output stages.
I_D (DC)	157 A - Sustained current capability when mounted on heatsink with R_th(ch–a) ≤ 2.77 °C/W per datasheet Note 3.
E_AS	161 mJ (single-pulse) - Withstands inductive energy during overcurrent events without failure in non-isolated converters.
Q_g	81 nC - Determines gate drive power requirement and switching speed trade-off in 100–500 kHz buck regulators.
C_iss	5500 pF - Impacts Miller effect and gate driver sizing; requires ≥2 A peak drive for sub-50 ns turn-on in high-frequency operation.
V_th	2.0–4.0 V - Ensures reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers in digital PWM controllers.

Pinout & Package

Package: TO-220 (Toshiba designation 2-10X1A), with metal tab electrically connected to Drain and thermally coupled to heatsink. Weight: 1.93 g (typ.).

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal requiring 10 V nominal drive; sensitive to ESD-requires handling precautions per datasheet.
2	Drain (heatsink)	Main high-side current path and thermal interface; must be isolated from other potentials unless system ground-referenced.
3	Source	Reference node for gate drive and current sensing; connects to low-side switch source or output in synchronous buck topology.

Key Features

Feature	Design Value
U-MOSⅧ-H process technology	Reduces specific on-resistance by ~25% vs. prior U-MOS generations, improving power density in space-constrained VRMs.
Low R_DS(ON) × Q_g figure-of-merit	292 Ω·nC - Balances conduction and switching losses for optimal efficiency across 200–400 kHz switching frequencies.
High avalanche energy rating	161 mJ - Allows operation without external snubbers in flyback or forward converters with moderate leakage inductance.
Body diode with controlled Q_rr	150 nC reverse recovery charge - Minimizes shoot-through risk and EMI in synchronous rectification when paired with matched high-side FET.

Applications

Server VRM Output Stage	Industrial DC-DC Converter
Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.2 V @ up to 200 A). IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch in interleaved phase-legs, conducting during bottom-half of switching cycle. Use Value: 3.6 mΩ R_DS(ON) limits conduction loss to <0.5 W per phase at 60 A, enabling >95% efficiency at full load with minimal heatsinking.	Use Scenario: 48 V to 12 V step-down converter for PLC I/O modules and motor drive auxiliary supplies. IC Role / Device Role / Timing Role: Primary high-side switch in non-isolated buck topology operating at 250 kHz with 64 V input transients. Use Value: 80 V V_DSS and 161 mJ E_AS ensure robustness against 100 V line surges and inductive kickback without clamping circuits.
Telecom Rectifier Module	Renewable Energy Inverter Auxiliary Supply
Use Scenario: 54 V to 3.3/5/12 V multiple-output DC-DC stage in telecom shelf power system. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp forward topology. Use Value: Body diode t_rr = 77 ns and Q_rr = 150 nC enable clean commutation with zero-voltage switching (ZVS) control, reducing diode conduction loss by >40% vs. Schottky.	Use Scenario: 100–150 V DC input to 24 V auxiliary supply in solar string inverters and battery storage systems. IC Role / Device Role / Timing Role: High-current switch in LLC resonant converter half-bridge leg, handling 100+ A peak currents. Use Value: 157 A I_D rating and R_th(ch–c) = 0.65 °C/W allow direct heatsink mounting for sustained 80 A RMS operation without derating.

Server VRM Output Stage

Industrial DC-DC Converter

Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.2 V @ up to 200 A).

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch in interleaved phase-legs, conducting during bottom-half of switching cycle.

Use Value: 3.6 mΩ R_DS(ON) limits conduction loss to <0.5 W per phase at 60 A, enabling >95% efficiency at full load with minimal heatsinking.

Use Scenario: 48 V to 12 V step-down converter for PLC I/O modules and motor drive auxiliary supplies.

IC Role / Device Role / Timing Role: Primary high-side switch in non-isolated buck topology operating at 250 kHz with 64 V input transients.

Use Value: 80 V V_DSS and 161 mJ E_AS ensure robustness against 100 V line surges and inductive kickback without clamping circuits.

Telecom Rectifier Module

Renewable Energy Inverter Auxiliary Supply

Use Scenario: 54 V to 3.3/5/12 V multiple-output DC-DC stage in telecom shelf power system.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp forward topology.

Use Value: Body diode t_rr = 77 ns and Q_rr = 150 nC enable clean commutation with zero-voltage switching (ZVS) control, reducing diode conduction loss by >40% vs. Schottky.

Use Scenario: 100–150 V DC input to 24 V auxiliary supply in solar string inverters and battery storage systems.

IC Role / Device Role / Timing Role: High-current switch in LLC resonant converter half-bridge leg, handling 100+ A peak currents.

Use Value: 157 A I_D rating and R_th(ch–c) = 0.65 °C/W allow direct heatsink mounting for sustained 80 A RMS operation without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP160N8F6	80 V V_DSS, 3.2 mΩ R_DS(ON), 160 A I_D, TO-220; higher Q_g (105 nC) and C_iss (6200 pF).	Better conduction loss but slower switching; suited for lower-frequency (<150 kHz) high-current industrial SMPS.	Select STP160N8F6 only if gate drive strength exceeds 2.5 A and thermal margin allows higher switching loss.
IRFP4468PBF	80 V V_DSS, 3.8 mΩ R_DS(ON), 120 A I_D, TO-247; lower Q_g (68 nC), but larger footprint and higher cost.	Lower gate charge enables faster switching in high-frequency (>500 kHz) designs, but requires TO-247 PCB layout and heatsink redesign.	Choose IRFP4468PBF only when board space permits TO-247 and target frequency exceeds 350 kHz with strict EMI constraints.

Compared with STP160N8F6 and IRFP4468PBF, the TK72E08N1,S1X offers the best balance of low R_DS(ON), moderate Q_g, and TO-220 compatibility-making it ideal for cost-sensitive, medium-frequency server and telecom VRMs where layout reuse and thermal simplicity are prioritized.

Availability

TK72E08N1,S1X is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and telecom rectifier modules requiring stable component supply and long-term production continuity.

Supply support for TK72E08N1,S1X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions with global distribution and automotive-grade reliability validation.

The TK72E08N1,S1X belongs to Toshiba's U-MOSⅧ-H power MOSFET family, engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter, telecom, and industrial power systems.

FAQ

What is the maximum continuous drain current rating for TK72E08N1,S1X under standard heatsink conditions?

The TK72E08N1,S1X supports 157 A continuous drain current (I_D) when mounted on a heatsink achieving R_th(ch–a) ≤ 2.77 °C/W, as specified in Note 3 of the datasheet. At ambient temperatures above 25 °C or with less effective cooling, derating per the SOA curve (Fig. 8.13) is required to maintain T_ch ≤ 150 °C. The package limit is 100 A without heatsink.

Does TK72E08N1,S1X have a built-in body diode, and what are its key recovery characteristics?

Yes, the TK72E08N1,S1X includes an integrated body diode with reverse recovery time (t_rr) of 77 ns and reverse recovery charge (Q_rr) of 150 nC at I_DR = 72 A and –dI_DR/dt = 100 A/µs. These values enable efficient synchronous rectification in forward and buck-derived topologies, provided gate timing avoids cross-conduction during diode conduction intervals.

What is the gate threshold voltage range for TK72E08N1,S1X, and how does it affect drive compatibility?

The TK72E08N1,S1X has a gate threshold voltage (V_th) range of 2.0–4.0 V at V_DS = 10 V and I_D = 1.0 mA. This ensures reliable turn-on with standard 3.3 V or 5 V logic-level PWM controllers, while maintaining sufficient noise margin against false triggering in noisy industrial environments. Gate drive must supply ≥10 V for full R_DS(ON) specification.

Can TK72E08N1,S1X be used in avalanche-mode operation, and what is its rated single-pulse energy?

Yes, the TK72E08N1,S1X is rated for single-pulse avalanche operation with E_AS = 161 mJ at T_ch = 25 °C. This capability supports robustness in inductive switching applications like flyback converters or motor drives with unclamped inductive loads, provided pulse duration and repetition rate stay within the guaranteed maximum curve (Fig. 8.14) and channel temperature remains ≤150 °C.

What package type and pin configuration does TK72E08N1,S1X use, and how is thermal management implemented?

The TK72E08N1,S1X uses a TO-220 package (Toshiba 2-10X1A) with three terminals: Pin 1 = Gate, Pin 2 = Drain (electrically and thermally connected to metal tab), Pin 3 = Source. Thermal management relies on mounting the drain-connected tab directly to a heatsink, achieving R_th(ch–c) = 0.65 °C/W-critical for sustaining high-current operation without exceeding T_ch = 150 °C.

TK72E08N1,S1X Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSVIII-H

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 72A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.3mOhm @ 36A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 81 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5500 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 192W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

TK72E08N1,S1X FAQ

1.How can I place an order for TK72E08N1,S1X through Aetrix?

Please submit a Request for Quotation (RFQ) for TK72E08N1,S1X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK72E08N1,S1X reliable?

The price and inventory of TK72E08N1,S1X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK72E08N1,S1X is usually 5 days.

3.What payment methods are accepted for TK72E08N1,S1X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK72E08N1,S1X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK72E08N1,S1X?

TK72E08N1,S1X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK72E08N1,S1X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK72E08N1,S1X?

For technical support, including TK72E08N1,S1X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK72E08N1,S1X requirements.

6.How does Aetrix verify that TK72E08N1,S1X is sourced from the original manufacturer or authorized distributors?

All TK72E08N1,S1X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK72E08N1,S1X meets industry standards.

7.What is the process for return or replacement of TK72E08N1,S1X?

All TK72E08N1,S1X units undergo pre-shipment inspection (PSI). If there is an issue with TK72E08N1,S1X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK72E08N1,S1X part is unused and in its original packaging.

Return procedure for TK72E08N1,S1X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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