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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK72E12N1,S1X

Name: TK72E12N1,S1X
Brand: Toshiba Semiconductor and Storage
SKU: TK72E12N1,S1X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK72E12N1,S1X

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: TK72E12N1,S1X.pdf

Description:: MOSFET N CH 120V 72A TO-220

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Product details

Overview

TK72E12N1,S1X from Toshiba is a silicon N-channel power MOSFET in U-MOSⅧ-H process, designed as a high-current switching element in DC-DC converters and motor drives. It delivers 120 V V_DSS, 3.6 mΩ R_DS(ON) (typ.) at V_GS = 10 V, and 179 A continuous drain current, operating reliably up to 150 °C channel temperature.

For engineers reviewing the TK72E12N1,S1X datasheet, TK72E12N1,S1X pinout, TK72E12N1,S1X application, or TK72E12N1,S1X equivalent, key selection criteria include its low conduction loss in high-efficiency 48 V input buck regulators, avalanche ruggedness for inductive load switching, thermal performance with TO-220 heatsink mounting, and gate drive compatibility with standard 10 V logic-level controllers.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate structure to minimize on-resistance while maintaining robust avalanche capability (E_AS = 256 mJ). Its enhancement-mode threshold voltage (2.0–4.0 V) ensures reliable turn-on with standard gate drivers and avoids unintended conduction under noise or leakage conditions.

The device integrates a fast-recovery body diode (t_rr = 110 ns, Q_rr = 290 nC) suitable for synchronous rectification and freewheeling in hard-switched topologies. Thermal design is governed by R_th(ch–c) = 0.49 °C/W, requiring mechanical attachment to a heatsink for sustained 179 A operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	120 V - supports 48 V and 60 V bus systems with ≥2× voltage margin for transients
R_DS(ON) (typ.)	3.6 mΩ at V_GS = 10 V - enables <1.3 W conduction loss at 19 A RMS in 1 kW converter
I_D (DC)	179 A - rated for continuous operation with heatsink at T_c = 25 °C
E_AS	256 mJ - withstands single-pulse inductive energy without failure in motor drive snubbers
Q_g	130 nC - determines gate drive power requirement (~1.3 mW per MHz at 10 V swing)
t_r/t_f	33 ns / 37 ns - enables efficient 100–500 kHz switching in hard-switched SMPS
V_th	2.0–4.0 V - ensures clean logic-level turn-on while rejecting sub-2 V noise

Pinout & Package

Package: TO-220 (TOSHIBA 2-10X1A), through-hole, heatsink-connected drain tab. Weight: 1.93 g (typ.).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives gate drive signal; requires ≤130 nC charge for full enhancement
2 (Drain)	High-side power terminal	Electrically connected to heatsink; must be isolated from other conductors unless referenced to system ground
3 (Source)	Power return / reference node	Serves as local ground reference for gate driver; carries full load current back to input capacitor

Key Features

Feature	Design Value
U-MOSⅧ-H trench process	Reduces R_DS(ON) × Q_g figure-of-merit by >25% vs. prior U-MOS generations
Low Crss (30 pF)	Minimizes Miller-induced shoot-through risk in half-bridge configurations
Body diode t_rr = 110 ns	Enables use in non-synchronous flyback and buck converters without external diode
Avalanche-rated (I_AR = 72 A)	Supports unclamped inductive switching in relay drivers and solenoid controls
ESD-sensitive (HBM Class 1B)	Requires grounded workstation handling and gate protection during PCB assembly

Applications

Server VRM Power Stage	Industrial DC Motor Drive
Use Scenario: High-density 48 V-to-12 V point-of-load regulator supplying CPU core voltage. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch in multiphase buck converter. Use Value: 3.6 mΩ R_DS(ON) reduces conduction loss by 40% vs. comparable 5 mΩ MOSFETs, improving full-load efficiency to >94%.	Use Scenario: H-bridge output stage controlling 1–3 kW brushed DC motors in CNC feed axes. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current and regenerative braking energy. Use Value: 256 mJ single-pulse avalanche energy absorbs inductive kickback during rapid deceleration without snubber circuitry.
Telecom Rectifier Module	EV Onboard Charger Input Stage
Use Scenario: Primary-side switch in 3.3 kW AC/DC front-end with PFC + LLC topology. IC Role / Device Role / Timing Role: Fast-switching MOSFET in boost PFC stage operating at 65–100 kHz. Use Value: 130 nC total gate charge enables clean 100 ns rise/fall times with 1 W gate driver, minimizing switching loss at high frequency.	Use Scenario: Isolation-stage primary switch in 6.6 kW single-phase OBC converting grid AC to 400 V DC bus. IC Role / Device Role / Timing Role: High-voltage switching transistor in dual-active-bridge (DAB) or phase-shifted full-bridge topology. Use Value: 120 V V_DSS provides sufficient margin over 400 V DC bus with transient spikes, eliminating need for higher-voltage (and higher-R_DS(ON)) alternatives.

Server VRM Power Stage

Industrial DC Motor Drive

Use Scenario: High-density 48 V-to-12 V point-of-load regulator supplying CPU core voltage.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch in multiphase buck converter.

Use Value: 3.6 mΩ R_DS(ON) reduces conduction loss by 40% vs. comparable 5 mΩ MOSFETs, improving full-load efficiency to >94%.

Use Scenario: H-bridge output stage controlling 1–3 kW brushed DC motors in CNC feed axes.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current and regenerative braking energy.

Use Value: 256 mJ single-pulse avalanche energy absorbs inductive kickback during rapid deceleration without snubber circuitry.

Telecom Rectifier Module

EV Onboard Charger Input Stage

Use Scenario: Primary-side switch in 3.3 kW AC/DC front-end with PFC + LLC topology.

IC Role / Device Role / Timing Role: Fast-switching MOSFET in boost PFC stage operating at 65–100 kHz.

Use Value: 130 nC total gate charge enables clean 100 ns rise/fall times with 1 W gate driver, minimizing switching loss at high frequency.

Use Scenario: Isolation-stage primary switch in 6.6 kW single-phase OBC converting grid AC to 400 V DC bus.

IC Role / Device Role / Timing Role: High-voltage switching transistor in dual-active-bridge (DAB) or phase-shifted full-bridge topology.

Use Value: 120 V V_DSS provides sufficient margin over 400 V DC bus with transient spikes, eliminating need for higher-voltage (and higher-R_DS(ON)) alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP180N10F7	R_DS(ON) = 3.8 mΩ (10 V), V_DSS = 100 V, Q_g = 125 nC	Limited to ≤100 V bus systems; lower avalanche rating (E_AS = 190 mJ)	Select when 100 V rating suffices and gate drive power budget is tighter
IXTH72N10L2	R_DS(ON) = 4.2 mΩ (10 V), V_DSS = 100 V, TO-247 package	Larger footprint; higher thermal resistance (R_th(ch–c) = 0.55 °C/W); no integrated heatsink tab	Choose for legacy TO-247 layouts where board space allows larger package

Compared with STP180N10F7 and IXTH72N10L2, the TK72E12N1,S1X offers superior 120 V rating and lower R_DS(ON), enabling higher bus voltage designs and reduced conduction loss-critical in space-constrained server and telecom power supplies where thermal headroom is limited.

Availability

TK72E12N1,S1X is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom rectifiers, and EV onboard charger input stages requiring stable component supply across multi-year production cycles.

Supply support for TK72E12N1,S1X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power ICs, and memory solutions, with emphasis on energy efficiency, reliability, and industrial-grade robustness.

The TK72E12N1,S1X belongs to Toshiba's U-MOSⅧ-H high-power MOSFET product line, engineered specifically for high-efficiency, high-current DC-DC conversion and motor control applications demanding low R_DS(ON), fast switching, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current rating for TK72E12N1,S1X?

The TK72E12N1,S1X is rated for 179 A DC drain current when case temperature (T_c) is maintained at 25 °C with proper heatsinking. This rating assumes the channel temperature does not exceed 150 °C and accounts for silicon-limited current capacity-not package-limited (which is 100 A). Derating is required above 25 °C case temperature per the R_th(ch–c) = 0.49 °C/W thermal resistance.

Does TK72E12N1,S1X have avalanche capability, and how is it specified?

Yes, the TK72E12N1,S1X is fully rated for single-pulse avalanche operation with E_AS = 256 mJ at T_ch = 25 °C and I_AR = 72 A. This is measured under standardized conditions (V_DD = 80 V, L = 48.3 µH) and reflects the device's ability to absorb inductive energy without failure-critical for motor drive and relay switching applications where unclamped inductive loads are present.

What is the gate threshold voltage range for TK72E12N1,S1X, and why does it matter?

The TK72E12N1,S1X has a gate threshold voltage (V_th) range of 2.0–4.0 V at V_DS = 10 V and I_D = 1.0 mA. This range ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers while providing noise immunity: voltages below 2.0 V will not cause significant conduction, preventing false triggering in electrically noisy environments such as industrial motor controls.

Can TK72E12N1,S1X be used in synchronous rectification topologies?

Yes, the TK72E12N1,S1X can be used in synchronous rectification, particularly in secondary-side switching of DC-DC converters. Its body diode exhibits t_rr = 110 ns and Q_rr = 290 nC, enabling efficient commutation when actively driven. However, optimal performance requires precise gate timing control to avoid cross-conduction-especially critical in high-frequency LLC or phase-shifted full-bridge designs where the TK72E12N1,S1X serves as the low-side switch.

What package type and pin configuration does TK72E12N1,S1X use?

The TK72E12N1,S1X uses the TO-220 package (TOSHIBA designation 2-10X1A), with three leads: Pin 1 = Gate, Pin 2 = Drain (internally connected to the metal heatsink tab), and Pin 3 = Source. The drain tab must be electrically isolated from other conductive surfaces unless intentionally tied to system ground, and thermal interface material is recommended between the tab and heatsink for optimal R_th(ch–c) performance.

TK72E12N1,S1X Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSVIII-H

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 120 V

Current - Continuous Drain (Id) @ 25°C:: 72A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.4mOhm @ 36A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8100 pF @ 60 V

FET Feature:: -

Power Dissipation (Max):: 255W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

TK72E12N1,S1X FAQ

1.How can I place an order for TK72E12N1,S1X through Aetrix?

Please submit a Request for Quotation (RFQ) for TK72E12N1,S1X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK72E12N1,S1X reliable?

The price and inventory of TK72E12N1,S1X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK72E12N1,S1X is usually 5 days.

3.What payment methods are accepted for TK72E12N1,S1X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK72E12N1,S1X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK72E12N1,S1X?

TK72E12N1,S1X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK72E12N1,S1X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK72E12N1,S1X?

For technical support, including TK72E12N1,S1X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK72E12N1,S1X requirements.

6.How does Aetrix verify that TK72E12N1,S1X is sourced from the original manufacturer or authorized distributors?

All TK72E12N1,S1X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK72E12N1,S1X meets industry standards.

7.What is the process for return or replacement of TK72E12N1,S1X?

All TK72E12N1,S1X units undergo pre-shipment inspection (PSI). If there is an issue with TK72E12N1,S1X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK72E12N1,S1X part is unused and in its original packaging.

Return procedure for TK72E12N1,S1X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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