Toshiba Semiconductor and Storage TK7A45DA(STA4,Q,M)

Overview

TK7A45DA(STA4,Q,M) from Toshiba is a silicon N-channel power MOSFET in the π-MOSⅦ family, designed for high-voltage switching regulator applications. It features 450 V drain-source breakdown voltage (V_(BR)DSS), 1.0 Ω typical R_DS(ON) at V_GS = 10 V and I_D = 3.3 A, 3.0 S typical forward transfer admittance (|Y_fs|), and 6.5 A continuous drain current - enabling efficient DC-DC conversion in industrial AC/DC adapters and offline SMPS.

For engineers reviewing the TK7A45DA(STA4,Q,M) datasheet, TK7A45DA(STA4,Q,M) pinout, TK7A45DA(STA4,Q,M) application, or TK7A45DA(STA4,Q,M) equivalent, key selection criteria include avalanche ruggedness (E_AS = 158 mJ), gate threshold voltage range (2.4–4.4 V), thermal resistance (R_th(ch-c) = 3.57 °C/W), and RoHS-compliant SC-67 package compatibility with through-hole mounting.

Technical Context

This device operates as an enhancement-mode power switch with a single-planar MOS structure optimized for hard-switched flyback and forward converters. Its low R_DS(ON) and high |Y_fs| support fast turn-on and reduced conduction loss, while the 150 °C channel temperature rating enables operation under sustained thermal stress.

The integrated body diode exhibits V_DSF = −1.7 V at I_DR = 6.5 A and t_rr = 1200 ns, making it suitable for freewheeling paths where reverse recovery behavior must be managed. Avalanche capability is validated per JEITA SC-67 mechanical standard with E_AS tested at V_DD = 90 V, L = 6.2 mH, and I_AR = 6.5 A.

Key Specifications

Pinout & Package

TK7A45DA(STA4,Q,M) uses the JEITA SC-67 package (Toshiba designation 2-10U1B), a through-hole variant of TO-220AB with isolated tab, rated for 1.7 g mass and 15.0 mm × 13 mm footprint. Thermal performance is optimized via direct metal-to-heatsink contact through the drain-connected tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP7NK45Z and FQP45N06L, TK7A45DA(STA4,Q,M) uniquely balances 450 V rating, 1.0 Ω R_DS(ON), and 158 mJ avalanche energy in a standard SC-67 package - making it optimal for cost-sensitive, thermally constrained offline converters where robustness and conduction efficiency are jointly critical.

Availability

TK7A45DA(STA4,Q,M) is available at Aetrix Electronics and suitable for AC/DC adapters, industrial SMPS, and LED driver bulk switching applications requiring stable component supply and long-lifecycle support.

Supply support for TK7A45DA(STA4,Q,M) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on industrial reliability and energy efficiency.

The π-MOSⅦ series, including TK7A45DA(STA4,Q,M), was developed specifically for high-voltage switching regulators in AC/DC and DC/DC power supplies targeting industrial, lighting, and appliance markets.

FAQ

What is the maximum continuous drain current for TK7A45DA(STA4,Q,M) at 25°C case temperature?

The TK7A45DA(STA4,Q,M) supports 6.5 A continuous drain current (I_D) at T_c = 25°C, as specified in its Absolute Maximum Ratings table. This rating assumes proper heatsinking to maintain channel temperature below 150°C. At elevated case temperatures, derating is required per the PD–T_c curve, with usable current dropping to ~3.5 A at T_c = 100°C. The TK7A45DA(STA4,Q,M) datasheet defines this limit under DC conditions with no pulse duty cycle applied.

Does TK7A45DA(STA4,Q,M) have avalanche capability, and how is it tested?

Yes, TK7A45DA(STA4,Q,M) is rated for single-pulse avalanche energy (E_AS) of 158 mJ, tested per JEITA SC-67 standard with V_DD = 90 V, L = 6.2 mH, R_G = 25 Ω, and I_AR = 6.5 A. This validates ruggedness against inductive switching transients in flyback and forward converters. Repetitive avalanche is limited to 3.5 mJ per pulse, constrained by channel temperature rise. The TK7A45DA(STA4,Q,M) does not guarantee unlimited repetitive avalanche operation.

What is the gate threshold voltage range for TK7A45DA(STA4,Q,M), and how does it affect drive requirements?

The TK7A45DA(STA4,Q,M) has a gate threshold voltage (V_th) range of 2.4 V to 4.4 V at V_DS = 10 V and I_D = 1 mA. This wide range means gate drive must exceed 4.4 V to ensure full enhancement across unit variation. For reliable switching, a minimum 10 V gate-source voltage is recommended to achieve the specified 1.0 Ω R_DS(ON). The TK7A45DA(STA4,Q,M) is not a logic-level MOSFET and requires dedicated gate driver circuitry.

Is TK7A45DA(STA4,Q,M) RoHS compliant, and what marking indicates this?

Yes, TK7A45DA(STA4,Q,M) is RoHS compliant, indicated by the [[G]]/RoHS [[Pb]] marking on the device body per Toshiba's labeling convention. This confirms compliance with EU Directive 2011/65/EU and absence of lead, mercury, cadmium, hexavalent chromium, PBB, and PBDE. The TK7A45DA(STA4,Q,M) meets RoHS requirements without exemptions and is suitable for export to regulated markets.

What is the thermal resistance from channel to case (R_th(ch-c)) for TK7A45DA(STA4,Q,M), and how does it impact heatsink selection?

The TK7A45DA(STA4,Q,M) has a channel-to-case thermal resistance (R_th(ch-c)) of 3.57 °C/W, measured under JEITA SC-67 mounting conditions with thermal grease and 0.5 N·m screw torque. This value enables calculation of junction temperature rise: T_j = T_c + (P_D × 3.57). For 35 W dissipation, a heatsink maintaining T_c ≤ 75°C ensures T_j ≤ 200°C - well within the 150°C absolute max if derated per Toshiba's reliability guidelines. The TK7A45DA(STA4,Q,M) requires mechanical mounting to a heatsink for rated power operation.