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Toshiba Semiconductor and Storage TK7A50D(STA4,Q,M)

Part No.:
TK7A50D(STA4,Q,M)
Manufacturer:
Toshiba Semiconductor and Storage
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixTK7A50D(STA4,Q,M).pdf
Description:
MOSFET N-CH 500V 7A TO220SIS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:22

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Product details

Overview

TK7A50D(STA4,Q,M) from Toshiba is a silicon N-channel power MOSFET in the π-MOSⅦ family, designed for high-voltage switching regulator applications. It features 500 V drain-source breakdown voltage (V(BR)DSS), 1.0 Ω typical RDS(ON) at VGS = 10 V and ID = 3.5 A, 2.5 S typical forward transfer admittance (|Yfs|), and 7 A continuous drain current - enabling efficient DC-DC conversion in industrial SMPS.

For engineers reviewing the TK7A50D(STA4,Q,M) datasheet, TK7A50D(STA4,Q,M) pinout, TK7A50D(STA4,Q,M) application, or TK7A50D(STA4,Q,M) equivalent, key selection criteria include avalanche ruggedness (EAS = 129 mJ), thermal resistance (Rth(ch-c) = 3.57 °C/W), gate charge profile (Qg = 12 nC), and RoHS-compliant SC-67 package compatibility with through-hole mounting.

Technical Context

This N-channel enhancement-mode MOSFET operates with a gate threshold voltage range of 2.4–4.4 V (VDS = 10 V, ID = 1 mA), ensuring reliable turn-on under standard 10 V gate drive. Its low output capacitance (Coss = 70 pF at VDS = 25 V) and fast switching times (tr = 18 ns, tf = 8 ns) support high-frequency operation up to several hundred kHz in hard-switched topologies.

The device integrates an intrinsic body diode with VDSF = −1.7 V at IDR = 7 A and trr = 1200 ns, suitable for freewheeling in flyback and forward converters. Its single-pulse avalanche rating (IAR = 7 A, EAS = 129 mJ) and repetitive avalanche capability (EAR = 3.5 mJ) provide robustness against transient overvoltage events without external snubbers.

Key Specifications

Parameter Value and Actual Design Meaning
V(BR)DSS500 V - supports input voltages up to 400 V DC in offline SMPS without derating
RDS(ON) (typ.)1.0 Ω at VGS = 10 V, ID = 3.5 A - enables <1.2 W conduction loss at 3.5 A
|Yfs| (typ.)2.5 S - delivers strong transconductance for stable gain and fast gate control response
Qg12 nC - determines gate driver power requirement and switching transition time
EAS129 mJ - allows safe energy absorption during inductive switching transients
Rth(ch-c)3.57 °C/W - enables 35 W dissipation with ≤125°C case-to-channel temperature rise
tr/tf18 ns / 8 ns - supports >500 kHz switching with minimal overlap loss

Pinout & Package

TK7A50D(STA4,Q,M) is housed in the SC-67 (Toshiba 2-10U1B) through-hole package, rated for 150°C channel temperature and weighing 1.7 g. The package features isolated leads compatible with JEDEC-standard PCB footprints and supports manual or wave soldering.

Pin/Terminal Circuit Role Design Meaning
1 (Gate)Control electrodeReceives voltage-controlled signal to modulate channel conductivity; requires ≤±30 V drive
2 (Drain)High-side current terminalConnects to primary-side high-voltage rail (e.g., rectified AC line); carries full load current
3 (Source)Reference/return terminalServes as common reference for gate drive and current sensing; tied to power ground in low-side configuration

Key Features

Feature Design Value
Low RDS(ON)1.0 Ω typ. reduces conduction losses in 3–5 A SMPS outputs, improving efficiency by ~0.5–1.2% at full load
High |Yfs|2.5 S ensures rapid channel modulation under light-to-heavy load transitions, minimizing regulation lag
Avalanche-rated129 mJ single-pulse EAS eliminates need for external clamping in flyback transformer reset circuits
Low Coss70 pF at 25 V minimizes capacitive switching loss and improves ZVS feasibility in resonant topologies
RoHS-compliant marking[[G]]/RoHS COMPATIBLE label confirms lead-free termination and compliance with EU Directive 2011/65/EU

Applications

AC-DC Adapter Power Supply Industrial DC-DC Converter

Use Scenario: 36 W offline flyback converter for industrial instrumentation powering.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer from rectified AC line to transformer primary.

Use Value: 500 V V(BR)DSS and 129 mJ EAS withstand 375 V DC link surges and transformer leakage spikes without failure.

Use Scenario: 48 V input to 12 V/5 A isolated forward converter in factory automation PLC modules.

IC Role / Device Role / Timing Role: Main power switch in primary-side synchronous rectification stage operating at 250 kHz.

Use Value: 1.0 Ω RDS(ON) limits conduction loss to <1.2 W, while 18 ns tr enables clean PWM edges with minimal shoot-through risk.

LED Driver for High-Bay Lighting UPS Inverter Stage

Use Scenario: Constant-current buck-boost LED driver for 100–277 V AC input high-bay luminaires.

IC Role / Device Role / Timing Role: High-side switch regulating current through series-connected LED strings via peak-current mode control.

Use Value: 2.5 S |Yfs| provides tight current loop gain stability across 10:1 dimming range, reducing output ripple.

Use Scenario: Half-bridge leg in 1 kVA online UPS inverter driving resistive-inductive loads.

IC Role / Device Role / Timing Role: Low-loss switching element handling bidirectional current during battery backup mode.

Use Value: Intrinsic body diode with −1.7 V VDSF and 1200 ns trr sustains reverse recovery without external antiparallel diodes in cost-sensitive designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP7NK50ZFP500 V V(BR)DSS, RDS(ON) = 1.2 Ω (typ.), Qg = 16 nC, TO-220FP packageHigher gate charge increases driver loss; same voltage rating but lower |Yfs (1.8 S)Preferred where footprint compatibility with TO-220FP is required and slightly higher RDS(ON) is acceptable
IRFBC40APBF500 V V(BR)DSS, RDS(ON) = 1.4 Ω (typ.), EAS = 85 mJ, TO-220AB packageLower avalanche energy and higher on-resistance reduce ruggedness in high-inductance flyback designsSelected when legacy board layout uses TO-220AB and moderate surge immunity suffices

Compared with STP7NK50ZFP and IRFBC40APBF, TK7A50D(STA4,Q,M) offers superior transconductance and avalanche margin in an SC-67 package optimized for high-density through-hole assembly, making it preferable for new designs prioritizing efficiency and transient robustness over legacy footprint reuse.

Availability

TK7A50D(STA4,Q,M) is available at Aetrix Electronics and suitable for AC-DC adapters, industrial DC-DC converters, and LED drivers requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant manufacturing.

Supply support for TK7A50D(STA4,Q,M) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and industrial-grade performance.

The TK7A50D(STA4,Q,M) belongs to Toshiba's π-MOSⅦ high-voltage power MOSFET product line, engineered specifically for rugged, high-efficiency switching regulators in industrial and commercial power supplies.

FAQ

What is the maximum continuous drain current for TK7A50D(STA4,Q,M) at 25°C case temperature?

The TK7A50D(STA4,Q,M) supports 7 A continuous drain current (ID) at Tc = 25°C, as specified in its Absolute Maximum Ratings table. This rating assumes proper heatsinking to maintain channel temperature ≤150°C and accounts for thermal resistance Rth(ch-c) = 3.57 °C/W. At elevated case temperatures, derating is required per the PD–Tc curve in the datasheet.

Does TK7A50D(STA4,Q,M) have avalanche capability, and how is it rated?

Yes, TK7A50D(STA4,Q,M) is fully rated for avalanche operation: single-pulse avalanche energy EAS = 129 mJ (tested at VDD = 90 V, L = 4.5 mH, IAR = 7 A), and repetitive avalanche energy EAR = 3.5 mJ. These values confirm its suitability for inductive switching applications like flyback converters where voltage overshoot occurs during turn-off.

What is the gate threshold voltage range for TK7A50D(STA4,Q,M), and why does it matter?

The gate threshold voltage Vth for TK7A50D(STA4,Q,M) is 2.4–4.4 V (VDS = 10 V, ID = 1 mA). This range ensures reliable turn-on with standard 5 V or 10 V gate drivers while providing noise immunity against spurious gate excitation. A wider Vth tolerance also accommodates process variation across production lots without compromising system-level timing margins.

Can TK7A50D(STA4,Q,M) be used in place of older π-MOS VI or π-MOS V devices?

TK7A50D(STA4,Q,M) is part of the π-MOSⅦ generation and is not a direct drop-in replacement for π-MOS V or VI devices due to differences in RDS(ON), Qg, and dynamic parameters. While pinout and voltage rating match, its lower RDS(ON) (1.0 Ω vs. ≥1.4 Ω) and higher |Yfs (2.5 S vs. ≤2.0 S) may require gate driver and loop compensation review before substitution in existing designs.

Is TK7A50D(STA4,Q,M) suitable for use in automotive applications?

No, TK7A50D(STA4,Q,M) is not qualified for automotive applications. Toshiba explicitly states that this device is not intended for systems requiring extraordinarily high reliability - including automotive ECUs, ADAS, or powertrain modules - and excludes use in vehicles per its Restrictions on Product Use notice. It is rated for industrial and commercial power supply use only.

TK7A50D(STA4,Q,M) Specifications

Product attributes
Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Series:
π-MOSVII
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.22Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id:
4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
12 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
600 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
35W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220SIS

TK7A50D(STA4,Q,M) FAQ

1.How can I place an order for TK7A50D(STA4,Q,M) through Aetrix?

Please submit a Request for Quotation (RFQ) for TK7A50D(STA4,Q,M) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK7A50D(STA4,Q,M) reliable?

The price and inventory of TK7A50D(STA4,Q,M) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK7A50D(STA4,Q,M) is usually 5 days.

3.What payment methods are accepted for TK7A50D(STA4,Q,M)?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK7A50D(STA4,Q,M) transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK7A50D(STA4,Q,M)?

TK7A50D(STA4,Q,M) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK7A50D(STA4,Q,M) order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK7A50D(STA4,Q,M)?

For technical support, including TK7A50D(STA4,Q,M) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK7A50D(STA4,Q,M) requirements.

6.How does Aetrix verify that TK7A50D(STA4,Q,M) is sourced from the original manufacturer or authorized distributors?

All TK7A50D(STA4,Q,M) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK7A50D(STA4,Q,M) meets industry standards.

7.What is the process for return or replacement of TK7A50D(STA4,Q,M)?

All TK7A50D(STA4,Q,M) units undergo pre-shipment inspection (PSI). If there is an issue with TK7A50D(STA4,Q,M), returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK7A50D(STA4,Q,M) part is unused and in its original packaging.

Return procedure for TK7A50D(STA4,Q,M):

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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