Toshiba Semiconductor and Storage TK7A60W5,S5VX

Overview

TK7A60W5 from Toshiba is a silicon N-channel MOSFET using DTMOS™ super-junction technology, designed as a high-voltage switching device in offline power supplies and motor drive half-bridges. It delivers 600 V V_DSS, 7.0 A continuous drain current, and a low R_DS(ON) of 0.54 Ω (typ.) at V_GS = 10 V - enabling efficient operation in AC-DC adapters and industrial motor controllers.

For engineers reviewing the TK7A60W5 datasheet, TK7A60W5 pinout, TK7A60W5 application, or TK7A60W5 equivalent, key selection criteria include its 75 ns reverse recovery time, 92 mJ single-pulse avalanche energy rating, TO-220SIS package with isolated mounting, and gate threshold voltage range of 3–4.5 V - all critical for robust hard-switching and flyback converter designs.

Technical Context

The TK7A60W5 implements Toshiba's DTMOS™ IV process, optimizing vertical charge compensation to reduce conduction and switching losses simultaneously. Its super-junction structure enables high breakdown voltage without proportional R_DS(ON) penalty, while the integrated body diode supports synchronous rectification and freewheeling in discontinuous conduction mode.

This MOSFET operates in enhancement mode with a gate threshold voltage between 3 V and 4.5 V, ensuring reliable turn-on with standard 5 V or 10 V gate drivers. Its 490 pF input capacitance and 1.7 pF reverse transfer capacitance support stable high-speed switching up to 100 kHz in PFC stages, with dv/dt ruggedness rated at 25 V/ns minimum.

Key Specifications

Pinout & Package

TK7A60W5 is housed in a TO-220SIS (JEITA SC-67) package with internal isolation between drain and mounting tab - enabling direct heatsink attachment without insulating hardware. The package weighs 1.7 g and features a 0.6 N·m maximum mounting torque specification.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP7NK60ZFP and IPP60R099CP, the TK7A60W5 offers balanced trade-offs: lower R_DS(ON) than STP7NK60ZFP without requiring complex gate drive, and simpler thermal integration than IPP60R099CP due to its isolated TO-220SIS package - making it optimal for mid-power industrial SMPS where reliability and manufacturability are prioritized over ultra-high efficiency.

Availability

TK7A60W5 is available at Aetrix Electronics and suitable for AC-DC power adapters, industrial motor drives, and LED streetlight drivers requiring stable component supply across multi-year production cycles.

Supply support for TK7A60W5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on industrial reliability and automotive-grade quality systems.

The TK7A60W5 belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial and lighting applications.

FAQ

What is the maximum continuous drain current rating for TK7A60W5?

The TK7A60W5 has a maximum continuous drain current (I_D) of 7.0 A at T_c = 25 °C. This rating assumes proper heatsinking to maintain channel temperature below 150 °C. At elevated case temperatures, derating is required per the R_th(ch-c) = 4.17 °C/W thermal resistance - for example, at T_c = 80 °C, the usable I_D drops to approximately 4.5 A. Always verify safe operating area (SOA) curves in the datasheet for pulsed conditions.

Does TK7A60W5 have an integrated body diode, and what are its recovery characteristics?

Yes, the TK7A60W5 includes a monolithic body diode optimized for fast recovery. Its reverse recovery time (t_rr) is 75 ns (typ.) at I_DR = 3.5 A and dI_DR/dt = 100 A/µs. The reverse recovery charge (Q_rr) is 0.3 µC (typ.), and peak reverse recovery current (I_rr) reaches 9 A. These parameters make the TK7A60W5 suitable for freewheeling and synchronous rectification in hard-switched topologies without external diode supplementation.

What is the gate threshold voltage range for TK7A60W5, and how does it affect drive compatibility?

The TK7A60W5 has a gate threshold voltage (V_th) range of 3.0 V to 4.5 V at V_DS = 10 V and I_D = 0.35 mA. This ensures reliable turn-on with standard 5 V logic-level drivers and compatibility with microcontroller GPIOs. However, full enhancement (R_DS(ON) ≤ 0.65 Ω) requires V_GS ≥ 10 V - so gate drivers must deliver sufficient voltage headroom above V_th to minimize conduction loss in high-current operation.

Is TK7A60W5 RoHS compliant, and what marking indicates compliance?

Yes, the TK7A60W5 is RoHS compliant. Per Toshiba documentation, RoHS-compliant units are marked with an underlined lot number and carry the [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] designation. Non-RoHS units display an unmarked (non-underlined) lot number and [[Pb]]/INCLUDES > MCV. Always verify the specific reel or tray label - RoHS status is not encoded in the part number itself but in the physical marking per JEDEC standards.

Can TK7A60W5 be used in avalanche mode, and what is its rated single-pulse energy?

Yes, the TK7A60W5 is fully rated for unclamped inductive switching (UIS) with a guaranteed single-pulse avalanche energy (E_AS) of 92 mJ at T_ch = 25 °C. This rating applies under specified test conditions: V_DD = 90 V, L = 49.9 mH, R_G = 25 Ω, and I_AR = 1.8 A. Operation in avalanche mode should be limited to transient protection scenarios - sustained avalanche operation degrades reliability and is not recommended for continuous design margins.