Toshiba Semiconductor and Storage TK7J90E,S1E

Overview

TK7J90E from Toshiba is a silicon N-channel power MOSFET in the π-MOSⅢ family, designed for high-voltage switching applications. It features a 900 V drain-source breakdown voltage, 1.6 Ω typical R_DS(ON) at V_GS = 10 V and I_D = 3.5 A, and 7 A continuous drain current - enabling use in offline AC-DC flyback and forward converters.

For engineers reviewing the TK7J90E datasheet, TK7J90E pinout, TK7J90E application, or TK7J90E equivalent, key selection considerations include its TO-3P(N) package thermal performance (R_th(ch-c) = 0.625 °C/W), avalanche ruggedness (E_AS = 235 mJ), and gate threshold range (2.5–4.0 V) for reliable drive in industrial SMPS designs.

Technical Context

This device operates in enhancement mode with a gate threshold voltage of 2.5–4.0 V at V_DS = 10 V and I_D = 0.7 mA, ensuring compatibility with standard 5 V and 10 V gate drivers. Its low leakage current (I_DSS ≤ 10 µA at V_DS = 720 V) supports stable high-voltage blocking in standby and light-load conditions.

The TK7J90E integrates a built-in body diode with reverse recovery time (t_rr) of 1100 ns and peak reverse recovery current (I_rr) of 18 A under specified test conditions (dI_DR/dt = 100 A/µs), making it suitable for hard-switched topologies where diode behavior impacts efficiency and EMI.

Key Specifications

Pinout & Package

TK7J90E is housed in a TO-3P(N) package (JEITA SC-65, Toshiba 2-16C1S), featuring an isolated metal tab for heatsink mounting and a 4.6 g typical mass. The case serves as the drain terminal, enabling low-inductance high-current paths and efficient thermal transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STW9NK90Z and FQP9N90C, the TK7J90E offers superior thermal resistance (0.625 °C/W vs. ≥0.85 °C/W) and guaranteed avalanche capability - critical for reliability in cost-sensitive industrial SMPS where heatsink space and transient protection are constrained.

Availability

TK7J90E is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, LED streetlight drivers, and photovoltaic inverter boost stages requiring stable component supply and long-term manufacturability.

Supply support for TK7J90E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with decades of expertise in high-reliability discrete components.

The TK7J90E belongs to Toshiba's π-MOSⅢ high-voltage power MOSFET product line, engineered specifically for energy-efficient switching power supplies in industrial, lighting, and renewable energy systems.

FAQ

What is the maximum gate-source voltage rating for TK7J90E?

The TK7J90E has a maximum gate-source voltage (V_GSS) rating of ±30 V. Exceeding this limit risks permanent gate oxide damage. Designers must ensure gate drive circuits - including bootstrap networks and level shifters - clamp V_GS within this range, especially during transient events. The TK7J90E's gate leakage current remains below ±1 µA at ±30 V, confirming robust oxide integrity under rated stress.

Does TK7J90E support avalanche operation, and what is its rated energy?

Yes, the TK7J90E is fully rated for single-pulse avalanche operation with E_AS = 235 mJ at T_ch = 25 °C. This rating is validated per JEDEC JESD24-1 and applies under defined test conditions (V_DD = 90 V, L = 8.8 mH, R_G = 25 Ω, I_AR = 7 A). The TK7J90E's avalanche capability eliminates need for external clamping in many PFC and flyback designs, enhancing system reliability without added components.

What is the thermal resistance from channel to case for TK7J90E, and how does it impact heatsink design?

The TK7J90E has a maximum channel-to-case thermal resistance (R_th(ch-c)) of 0.625 °C/W. This low value enables efficient heat transfer from the die to the heatsink via the metal tab (Drain terminal). For example, at 200 W dissipation, the channel-to-case ΔT is limited to 125 °C - allowing safe operation at T_c = 25 °C. The TK7J90E's TO-3P(N) package thus supports compact heatsinks in space-constrained industrial power modules.

How does the body diode performance of TK7J90E affect its use in quasi-resonant converters?

The TK7J90E's body diode exhibits t_rr = 1100 ns, Q_rr = 8 µC, and I_rr = 18 A under standardized test conditions (I_DR = 7 A, dI_DR/dt = 100 A/µs). These parameters determine reverse recovery loss and EMI generation during zero-voltage switching transitions. In QR flyback controllers, the TK7J90E's predictable diode behavior allows accurate timing of valley switching, minimizing voltage spikes and improving efficiency - a key advantage over generic 900 V MOSFETs with uncharacterized diodes.

Is TK7J90E RoHS compliant, and what marking indicates compliance?

Yes, the TK7J90E is RoHS compliant. Per Toshiba documentation, RoHS-compliant units are marked with an underlined lot number and carry the [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] designation. Non-RoHS versions display an unmarked (non-underlined) lot number and [[Pb]]/INCLUDES > MCV. All TK7J90E units supplied by Aetrix Electronics meet EU Directive 2011/65/EU requirements, and the TK7J90E's lead-free finish is verified through material declarations and supplier audits.