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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK7P50D(T6RSS-Q)

Name: TK7P50D(T6RSS-Q)
Brand: Toshiba Semiconductor and Storage
SKU: TK7P50D(T6RSS-Q)
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK7P50D(T6RSS-Q)

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: TK7P50D(T6RSS-Q).pdf

Description:: MOSFET N-CH 500V 7A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

TK7P50D(T6RSS-Q) from Toshiba is a silicon N-channel power MOSFET designed for high-voltage switching regulator applications. It features 500 V drain-source breakdown voltage (V_(BR)DSS), 1.0 Ω typical R_DS(ON) at V_GS = 10 V and I_D = 3.5 A, 2.5 S typical forward transfer admittance (|Y_fs|), 100 W drain power dissipation at T_c = 25°C, and 1.25 °C/W channel-to-case thermal resistance - enabling efficient high-current DC-DC conversion in industrial SMPS.

For engineers reviewing the TK7P50D(T6RSS-Q) datasheet, TK7P50D(T6RSS-Q) pinout, TK7P50D(T6RSS-Q) application, or TK7P50D(T6RSS-Q) equivalent, key selection criteria include avalanche ruggedness (E_AS = 105 mJ), gate threshold voltage range (2.4–4.4 V), low leakage (I_DSS ≤ 10 μA at 500 V), diode reverse recovery performance (Q_rr = 7 μC), and JEDEC-compatible TO-220AB package with heatsink-connected drain terminal.

Technical Context

This device belongs to Toshiba's π-MOSⅦ series, optimized for hard-switched flyback and forward converters operating up to 500 V bus voltage. Its enhancement-mode gate structure, low Crss (4 pF), and 12 nC total gate charge support fast, low-loss switching with minimal Miller-induced turn-on risk.

The integrated body diode exhibits 1200 ns reverse recovery time and −1.7 V forward voltage at 7 A, making it suitable for freewheeling paths where synchronous rectification is not implemented. Thermal design must respect R_th(ch-c) = 1.25 °C/W and limit channel temperature to ≤150°C under continuous operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	500 V - supports 400 V DC-link designs with 25% safety margin
R_DS(ON)	1.0 Ω (typ.) - enables <7 W conduction loss at 3.5 A RMS in 100 kHz SMPS
\|Y_fs\|	2.5 S (typ.) - provides strong transconductance for stable current-mode control loop response
E_AS	105 mJ - withstands single-pulse inductive energy without failure in clamp or snubber circuits
Q_g	12 nC - allows efficient gate drive with standard 1-A peak drivers at ≤500 kHz
T_ch max	150 °C - defines maximum allowable junction temperature for reliability-limited lifetime
C_iss	600 pF - determines input capacitance-driven gate drive power and turn-on delay

Pinout & Package

TK7P50D(T6RSS-Q) uses a TO-220AB package (Toshiba designation: 2-7K1A), with exposed drain tab thermally and electrically connected to Pin 2 for heatsink mounting. The case is rated for 100 W dissipation at 25°C case temperature.

Pin/Terminal	Circuit Role	Design Meaning
1 (GATE)	Control electrode	Receives voltage-controlled signal; threshold 2.4–4.4 V; requires <±1 μA leakage current handling
2 (DRAIN)	High-side power terminal	Connected to heatsink; carries full load current and withstands 500 V transient spikes
3 (SOURCE)	Reference/return path	Serves as local ground reference for gate drive; source inductance directly impacts switching stability

Key Features

Feature	Design Value
Avalanche-rated operation	105 mJ single-pulse E_AS enables robustness against inductive switching transients without external clamping
Low R_DS(ON) × Q_g figure-of-merit	1.0 Ω × 12 nC = 12 Ω·nC - balances conduction and switching losses in medium-frequency SMPS
Enhancement-mode gate	V_th = 2.4–4.4 V ensures reliable turn-off at 0 V gate bias and noise immunity above 2 V
Integrated body diode	V_DSF = −1.7 V at 7 A enables freewheeling in non-synchronous topologies with predictable recovery
Thermal efficiency	R_th(ch-c) = 1.25 °C/W allows compact heatsinking for 7 A continuous drain current

Applications

Industrial Switch-Mode Power Supplies	AC-DC Adapters (≥100 W)
Use Scenario: Primary-side switch in 200–400 V DC-input offline flyback converters delivering 120–200 W output. IC Role / Device Role / Timing Role: High-voltage power switch controlled by PWM controller; operates at 65–130 kHz with hard switching. Use Value: 500 V rating and 105 mJ avalanche capability prevent failure during output short-circuit or transformer saturation events.	Use Scenario: Main switching transistor in universal-input (90–264 V AC) 150 W laptop adapter with active PFC front-end. IC Role / Device Role / Timing Role: DC-DC power stage switch after boost PFC; handles 400 V DC bus with 100 kHz fixed-frequency operation. Use Value: 1.0 Ω R_DS(ON) limits conduction loss to <1.2 W at 3.5 A RMS, supporting >88% full-load efficiency.
Uninterruptible Power Supplies (UPS)	LED Driver Power Stages
Use Scenario: Inverter-stage switch in line-interactive UPS converting 360–400 V DC battery bank to 230 V AC output. IC Role / Device Role / Timing Role: Half-bridge high-side switch; subjected to repetitive 50 Hz–1 kHz bidirectional current stress and bus transients. Use Value: 28 A pulsed drain current rating and 150 °C channel temperature limit support surge handling during brownout recovery.	Use Scenario: Buck converter switch driving constant-current LED strings in outdoor signage with 300–450 V DC input. IC Role / Device Role / Timing Role: Primary power switch in isolated or non-isolated buck topology; duty cycle modulated for dimming. Use Value: Low Crss (4 pF) minimizes dv/dt-induced false turn-on, critical for stable dimming control in high-noise environments.

Industrial Switch-Mode Power Supplies

AC-DC Adapters (≥100 W)

Use Scenario: Primary-side switch in 200–400 V DC-input offline flyback converters delivering 120–200 W output.

IC Role / Device Role / Timing Role: High-voltage power switch controlled by PWM controller; operates at 65–130 kHz with hard switching.

Use Value: 500 V rating and 105 mJ avalanche capability prevent failure during output short-circuit or transformer saturation events.

Use Scenario: Main switching transistor in universal-input (90–264 V AC) 150 W laptop adapter with active PFC front-end.

IC Role / Device Role / Timing Role: DC-DC power stage switch after boost PFC; handles 400 V DC bus with 100 kHz fixed-frequency operation.

Use Value: 1.0 Ω R_DS(ON) limits conduction loss to <1.2 W at 3.5 A RMS, supporting >88% full-load efficiency.

Uninterruptible Power Supplies (UPS)

LED Driver Power Stages

Use Scenario: Inverter-stage switch in line-interactive UPS converting 360–400 V DC battery bank to 230 V AC output.

IC Role / Device Role / Timing Role: Half-bridge high-side switch; subjected to repetitive 50 Hz–1 kHz bidirectional current stress and bus transients.

Use Value: 28 A pulsed drain current rating and 150 °C channel temperature limit support surge handling during brownout recovery.

Use Scenario: Buck converter switch driving constant-current LED strings in outdoor signage with 300–450 V DC input.

IC Role / Device Role / Timing Role: Primary power switch in isolated or non-isolated buck topology; duty cycle modulated for dimming.

Use Value: Low Crss (4 pF) minimizes dv/dt-induced false turn-on, critical for stable dimming control in high-noise environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP7NK50ZFP	R_DS(ON) = 1.2 Ω (typ.), E_AS = 75 mJ, Q_g = 14 nC, TO-220FP package (full-pack, no heatsink tab)	Lacks exposed drain tab; requires insulated mounting; lower avalanche rating reduces margin in unclamped inductive loads	Prefer TK7P50D(T6RSS-Q) when direct heatsink mounting and higher single-pulse ruggedness are required
IRFBC40APBF	V_(BR)DSS = 600 V, R_DS(ON) = 1.4 Ω (typ.), E_AS = 110 mJ, TO-220AB package, but obsolete per Infineon lifecycle notice	Higher voltage rating adds cost and gate charge overhead; end-of-life status limits long-term supply assurance	TK7P50D(T6RSS-Q) offers better R_DS(ON)/Q_g balance and active production support through 2026

Compared with STP7NK50ZFP and IRFBC40APBF, TK7P50D(T6RSS-Q) delivers superior thermal interface via TO-220AB drain-tab mounting, tighter R_DS(ON) tolerance (1.0–1.22 Ω vs. 1.2 Ω typ.), and documented 2026 production continuity - making it optimal for new industrial SMPS designs requiring field-proven ruggedness and sourcing stability.

Availability

TK7P50D(T6RSS-Q) is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, AC-DC adapters ≥100 W, and uninterruptible power supplies requiring stable component supply, long-lifecycle assurance, and JEDEC-standard TO-220AB compatibility.

Supply support for TK7P50D(T6RSS-Q) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with global manufacturing and quality systems certified to ISO 9001 and IATF 16949.

The π-MOSⅦ series, including TK7P50D(T6RSS-Q), was developed for high-efficiency, high-reliability switching power supplies in industrial and consumer equipment - emphasizing avalanche ruggedness, low gate charge, and thermal performance in standard packages.

FAQ

What is the maximum continuous drain current rating for TK7P50D(T6RSS-Q) at 25°C case temperature?

The TK7P50D(T6RSS-Q) has a DC drain current rating of 7 A at T_c = 25°C, as specified in its Absolute Maximum Ratings table. This value assumes ideal heatsinking and derates linearly with increasing case temperature - for example, to ~4.5 A at T_c = 100°C - and must be validated against actual channel temperature using R_th(ch-c) = 1.25 °C/W and power dissipation calculations.

Does TK7P50D(T6RSS-Q) support gate drive from standard 12 V microcontroller GPIOs?

Yes, TK7P50D(T6RSS-Q) is compatible with 12 V gate drive: its gate threshold voltage range (2.4–4.4 V) ensures full enhancement well below 12 V, and its 12 nC total gate charge allows clean switching with common 1-A peak gate drivers. However, a dedicated gate driver IC is recommended for high-frequency or high-noise applications to minimize rise/fall times and suppress ringing.

Is TK7P50D(T6RSS-Q) suitable for use in synchronous rectification topologies?

No, TK7P50D(T6RSS-Q) is not intended for synchronous rectification. Its body diode has relatively high V_DSF (−1.7 V) and slow t_rr (1200 ns), resulting in excessive conduction and recovery losses compared to purpose-designed SR FETs. For synchronous rectification, discrete low-V_F Schottky diodes or dedicated SR controllers with optimized low-R_DS(ON), low-Q_rr MOSFETs are preferred.

What is the safe operating area (SOA) limitation for TK7P50D(T6RSS-Q) in linear mode?

The TK7P50D(T6RSS-Q) SOA curve (Fig. 5 in datasheet) defines maximum simultaneous V_DS and I_D under DC, pulsed, and avalanche conditions. In linear (ohmic) operation, it is limited to ≤10 A at 50 V or ≤2 A at 200 V for DC, with strict derating above 25°C case temperature. Linear use is discouraged due to thermal runaway risk; the device is optimized for switching, not analog operation.

How does the TK7P50D(T6RSS-Q) body diode performance compare to discrete ultrafast diodes?

The TK7P50D(T6RSS-Q) body diode has Q_rr = 7 μC and t_rr = 1200 ns at I_DR = 7 A, which is significantly slower and higher-loss than dedicated ultrafast diodes (e.g., 50–100 ns, <1 μC). While sufficient for basic freewheeling in low-frequency SMPS, it introduces measurable switching loss and EMI in high-frequency designs - justifying external diode placement when efficiency or noise is critical.

TK7P50D(T6RSS-Q) Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: π-MOSVII

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.22Ohm @ 3.5A, 10V

Vgs(th) (Max) @ Id:: 4.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 100W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

TK7P50D(T6RSS-Q) FAQ

1.How can I place an order for TK7P50D(T6RSS-Q) through Aetrix?

Please submit a Request for Quotation (RFQ) for TK7P50D(T6RSS-Q) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK7P50D(T6RSS-Q) reliable?

The price and inventory of TK7P50D(T6RSS-Q) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK7P50D(T6RSS-Q) is usually 5 days.

3.What payment methods are accepted for TK7P50D(T6RSS-Q)?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK7P50D(T6RSS-Q) transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK7P50D(T6RSS-Q)?

TK7P50D(T6RSS-Q) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK7P50D(T6RSS-Q) order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK7P50D(T6RSS-Q)?

For technical support, including TK7P50D(T6RSS-Q) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK7P50D(T6RSS-Q) requirements.

6.How does Aetrix verify that TK7P50D(T6RSS-Q) is sourced from the original manufacturer or authorized distributors?

All TK7P50D(T6RSS-Q) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK7P50D(T6RSS-Q) meets industry standards.

7.What is the process for return or replacement of TK7P50D(T6RSS-Q)?

All TK7P50D(T6RSS-Q) units undergo pre-shipment inspection (PSI). If there is an issue with TK7P50D(T6RSS-Q), returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK7P50D(T6RSS-Q) part is unused and in its original packaging.

Return procedure for TK7P50D(T6RSS-Q):

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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