Toshiba Semiconductor and Storage TK7P60W5,RVQ

Overview

TK7P60W5 from Toshiba is a silicon N-channel power MOSFET using DTMOS™ super-junction technology, designed for high-voltage switching in offline AC-DC converters and motor drives. It delivers 600 V V_DSS, 7.0 A continuous drain current, and low R_DS(ON) of 0.54 Ω (typ.) at V_GS = 10 V - enabling efficient operation in compact 60 W–150 W SMPS designs.

For engineers reviewing the TK7P60W5 datasheet, TK7P60W5 pinout, TK7P60W5 application, or TK7P60W5 equivalent, key selection criteria include its fast reverse recovery time (t_rr = 75 ns typ.), MOSFET dv/dt ruggedness ≥25 V/ns, and gate threshold voltage range (3–4.5 V) compatible with standard 5 V/12 V controller logic.

Technical Context

This device implements Toshiba's DTMOS™ IV process, optimizing charge balance in the drift region to reduce R_DS(ON) × Q_g trade-off. Its internal body diode features soft reverse recovery (Q_rr = 0.3 µC typ., t_rr = 75 ns), minimizing switching losses and EMI in hard-switched topologies.

The TK7P60W5 operates as a unidirectional, enhancement-mode switch with gate-controlled turn-on only. Thermal design relies on its low R_th(ch-c) of 2.09 °C/W and drain-connected heatsink tab (Pin 2), supporting surface-mount thermal management in DPAK packages without requiring through-hole mounting.

Key Specifications

Pinout & Package

TK7P60W5 uses the industry-standard DPAK (TO-252AA) package with exposed drain pad for thermal conduction. The package measures 6.7 mm × 6.2 mm × 2.4 mm (L × W × H) and weighs 0.36 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP7NK60ZFP and IPP60R099C7, the TK7P60W5 offers optimal balance of low R_DS(ON), fast diode recovery, and moderate gate charge - making it especially well-suited for cost-sensitive, thermally constrained 60–120 W offline SMPS where reliability under transient stress is critical.

Availability

TK7P60W5 is available at Aetrix Electronics and suitable for AC-DC power supplies, industrial motor controls, and LED lighting drivers requiring stable component supply across multi-year production cycles.

Supply support for TK7P60W5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The TK7P60W5 belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 600 V-class offline power conversion systems.

FAQ

What is the maximum continuous drain current rating for TK7P60W5?

The TK7P60W5 has a maximum continuous drain current (I_D) rating of 7.0 A at T_c = 25 °C. This rating assumes proper PCB thermal management - specifically, mounting the drain tab (Pin 2) to ≥200 mm² of 2-oz copper to maintain channel temperature ≤150 °C. At elevated case temperatures, derating applies per the datasheet's PD–T_c curve (Fig. 8.15). The TK7P60W5 supports pulsed drain currents up to 28 A.

Does TK7P60W5 include an integrated body diode, and what are its recovery characteristics?

Yes, the TK7P60W5 integrates a monolithic N-channel MOSFET body diode optimized for soft recovery. Its reverse recovery time (t_rr) is 75 ns (typ.) at I_DR = 3.5 A, V_GS = 0 V, and −dI_DR/dt = 100 A/µs. Reverse recovery charge (Q_rr) is 0.3 µC (typ.), and peak reverse recovery current (I_rr) reaches 9.0 A. These values are measured under standardized conditions and directly impact EMI and switching loss in hard-switched topologies.

What gate drive voltage range is required to fully enhance TK7P60W5?

The TK7P60W5 is an enhancement-mode device with a gate threshold voltage (V_th) specified from 3.0 V to 4.5 V (V_DS = 10 V, I_D = 0.35 mA). To achieve rated R_DS(ON) ≤0.67 Ω, a minimum V_GS of 10 V is required. Operation between 5 V and 10 V yields partial enhancement - useful for analog control but not recommended for full-power switching. The absolute maximum V_GS is ±30 V.

Is TK7P60W5 suitable for avalanche-rated applications, and what is its single-pulse energy rating?

Yes, the TK7P60W5 is rated for single-pulse avalanche operation with E_AS = 92 mJ (typ.) under defined test conditions (V_DD = 90 V, T_ch = 25 °C, L = 49.9 mH, R_G = 25 Ω, I_AR = 1.8 A). This rating supports robustness during output short-circuits or transformer saturation events in non-clamped topologies. Repeated avalanche stress is not guaranteed and must be avoided per Toshiba's reliability guidelines.

What package type does TK7P60W5 use, and how is thermal performance achieved?

The TK7P60W5 uses the DPAK (TO-252AA) surface-mount package, designated by Toshiba as 2-7K1S. Thermal performance relies on direct conduction from the channel to the exposed drain copper tab (Pin 2), achieving a channel-to-case thermal resistance (R_th(ch–c)) of 2.09 °C/W when mounted to ≥200 mm² of 2-oz copper. No through-hole mounting is needed - thermal design centers on PCB copper area, thickness, and proximity to other heat sources.