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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK7P60W,RVQ

Name: TK7P60W,RVQ
Brand: Toshiba Semiconductor and Storage
SKU: TK7P60W,RVQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK7P60W,RVQ

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: TK7P60W,RVQ.pdf

Description:: MOSFET N CH 600V 7A DPAK

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Product details

Overview

TK7P60W from Toshiba is a silicon N-channel MOSFET using DTMOS™ Super Junction technology, designed as a high-voltage switching device in offline power supplies. It delivers 600 V V_DSS, 7.0 A continuous drain current, and a typical R_DS(ON) of 0.5 Ω at V_GS = 10 V, enabling efficient operation in AC-DC adapters and industrial SMPS.

For engineers reviewing the TK7P60W datasheet, TK7P60W pinout, TK7P60W application, or TK7P60W equivalent, key selection criteria include avalanche ruggedness (92 mJ), gate threshold voltage range (2.7–3.7 V), thermal resistance (2.09 °C/W), and DPAK package suitability for surface-mount board space and heatsink integration.

Technical Context

The TK7P60W implements Toshiba's DTMOS™ architecture to achieve low conduction loss while maintaining robust switching performance. Its enhancement-mode operation with V_th = 2.7–3.7 V ensures compatibility with standard 3.3 V/5 V gate drivers, and its 490 pF C_iss supports stable high-frequency PWM control up to several hundred kHz.

Designed for hard-switched topologies, the device features single-pulse avalanche capability (E_AS = 92 mJ) and diode dv/dt ruggedness ≥25 V/ns - critical for flyback and LLC resonant converters where voltage transients and reverse recovery stress are present.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports universal input (85–265 VAC) offline designs without derating
R_DS(ON) (typ.)	0.5 Ω at V_GS = 10 V - reduces conduction loss in 7 A continuous applications
I_D (DC)	7.0 A - enables compact 60–100 W power supplies with DPAK thermal performance
E_AS	92 mJ - withstands energy spikes during overvoltage or short-circuit events
R_th(ch-c)	2.09 °C/W - allows direct heatsinking via drain tab for >50 W dissipation at T_c = 100 °C
Q_g (typ.)	15 nC - balances switching speed and gate drive loss in 100–300 kHz operation
V_th	2.7–3.7 V - ensures reliable turn-on with logic-level and microcontroller-compatible drivers

Pinout & Package

TK7P60W is housed in a DPAK (TOSHIBA 2-7K1S) surface-mount package with exposed drain pad for thermal conduction. The drain terminal serves as both power path and heatsink interface.

Pin/Terminal	Circuit Role	Design Meaning
1: Gate	Control input	Receives gate drive signal; requires <±1 µA leakage per datasheet; sensitive to ESD
2: Drain (Heatsink)	High-side power output	Connected to primary-side high-voltage rail; electrically and thermally coupled to PCB copper pour
3: Source	Power return / reference node	Serves as local ground for gate drive; carries full load current and reverse recovery diode current

Key Features

Feature	Design Value
DTMOS™ Super Junction structure	Enables 0.5 Ω R_DS(ON) at 600 V - improves efficiency vs. planar MOSFETs in same package
Enhancement-mode gate	V_th = 2.7–3.7 V ensures safe off-state under zero-bias and predictable turn-on with 5 V controllers
Integrated body diode	Reverse recovery time t_rr = 230 ns (typ.) - suitable for discontinuous conduction mode (DCM) flyback snubberless operation
Avalanche-rated	Guaranteed 92 mJ single-pulse E_AS - eliminates need for external clamping in many SMPS layouts
ESD-sensitive design	HBM rating not specified, but handling precautions required per Toshiba reliability guidelines

Applications

AC-DC Adapters	Industrial SMPS
Use Scenario: 65 W laptop adapter operating from 85–265 VAC input with quasi-resonant flyback topology. IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer into transformer. Use Value: 0.5 Ω R_DS(ON) and 92 mJ avalanche rating reduce heatsink size and improve surge immunity without snubber circuits.	Use Scenario: 100 W programmable DC power supply with active PFC front-end and LLC resonant secondary stage. IC Role / Device Role / Timing Role: PFC boost switch handling continuous 7 A current at 600 V bus. Use Value: Low Q_g (15 nC) and C_iss (490 pF) enable clean zero-voltage switching (ZVS) transitions above 200 kHz.
LED Driver Power Stages	Telecom Power Rectification
Use Scenario: Constant-current LED driver for street lighting, accepting 277 VAC line input. IC Role / Device Role / Timing Role: High-side switch in buck-boost or SEPIC configuration driving 350 mA–1 A loads. Use Value: 2.09 °C/W R_th(ch-c) allows direct heatsink mounting on metal-core PCB, sustaining >70 °C ambient operation.	Use Scenario: -48 V telecom rectifier module converting AC to regulated DC with hold-up capacitance. IC Role / Device Role / Timing Role: Synchronous rectifier or primary-side switch in forward converter with active clamp. Use Value: Diode dv/dt ruggedness ≥25 V/ns prevents false turn-on during fast voltage transitions across transformer leakage inductance.

AC-DC Adapters

Industrial SMPS

Use Scenario: 65 W laptop adapter operating from 85–265 VAC input with quasi-resonant flyback topology.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer into transformer.

Use Value: 0.5 Ω R_DS(ON) and 92 mJ avalanche rating reduce heatsink size and improve surge immunity without snubber circuits.

Use Scenario: 100 W programmable DC power supply with active PFC front-end and LLC resonant secondary stage.

IC Role / Device Role / Timing Role: PFC boost switch handling continuous 7 A current at 600 V bus.

Use Value: Low Q_g (15 nC) and C_iss (490 pF) enable clean zero-voltage switching (ZVS) transitions above 200 kHz.

LED Driver Power Stages

Telecom Power Rectification

Use Scenario: Constant-current LED driver for street lighting, accepting 277 VAC line input.

IC Role / Device Role / Timing Role: High-side switch in buck-boost or SEPIC configuration driving 350 mA–1 A loads.

Use Value: 2.09 °C/W R_th(ch-c) allows direct heatsink mounting on metal-core PCB, sustaining >70 °C ambient operation.

Use Scenario: -48 V telecom rectifier module converting AC to regulated DC with hold-up capacitance.

IC Role / Device Role / Timing Role: Synchronous rectifier or primary-side switch in forward converter with active clamp.

Use Value: Diode dv/dt ruggedness ≥25 V/ns prevents false turn-on during fast voltage transitions across transformer leakage inductance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP7NK60ZFP	600 V, 7 A, R_DS(ON) = 0.7 Ω (typ.), TO-220FP package, no guaranteed E_AS	Requires external avalanche protection in flyback designs; larger footprint than DPAK	Prefer TK7P60W when board space, thermal performance, or unclamped transient robustness are critical.
IPP60R099C6	600 V, 7.5 A, R_DS(ON) = 0.099 Ω (typ.), TO-220, CoolMOS™ C6 technology	Lower R_DS(ON) but higher Q_g (42 nC); optimized for >300 kHz ZVS, not DCM flyback	Prefer TK7P60W for cost-sensitive, lower-frequency (<200 kHz), heatsink-limited designs where E_AS matters more than ultra-low conduction loss.

Compared with STP7NK60ZFP and IPP60R099C6, the TK7P60W offers superior avalanche ruggedness and DPAK thermal integration at moderate R_DS(ON), making it optimal for compact, reliability-focused offline SMPS where layout simplicity and transient immunity outweigh ultra-low conduction loss.

Availability

TK7P60W is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS, LED driver power stages, and telecom power rectification requiring stable component supply and long-term lifecycle support.

Supply support for TK7P60W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with global manufacturing and quality systems certified to ISO 9001 and IATF 16949.

The TK7P60W belongs to Toshiba's DTMOS™ high-voltage MOSFET product line, engineered specifically for energy-efficient, compact, and robust offline power conversion in consumer and industrial applications.

FAQ

What is the maximum continuous drain current for TK7P60W at 25°C ambient?

The TK7P60W specifies a DC drain current (I_D) of 7.0 A at case temperature T_c = 25°C. However, actual usable current depends on PCB layout, heatsinking, and ambient temperature. At T_c = 100°C, the derated I_D drops to approximately 4.2 A per the Safe Operating Area curve in the TK7P60W datasheet.

Does TK7P60W have a built-in body diode, and what are its reverse recovery characteristics?

Yes, the TK7P60W includes an integrated body diode. Its reverse recovery time (t_rr) is 230 ns (typ.) at I_DR = 3.5 A and dI_DR/dt = 100 A/µs. The reverse recovery charge (Q_rr) is 1.7 µC (typ.), supporting reliable operation in discontinuous conduction mode (DCM) flyback converters without external snubbers.

Is TK7P60W suitable for use in automotive applications?

No, the TK7P60W is not qualified for automotive applications. It lacks AEC-Q101 certification, and Toshiba explicitly restricts its use in equipment requiring extraordinarily high reliability - including automotive systems - per the "Restrictions on Product Use" section of the TK7P60W datasheet.

What is the gate threshold voltage range for TK7P60W, and how does it affect drive compatibility?

The TK7P60W has a gate threshold voltage (V_th) range of 2.7–3.7 V at V_DS = 10 V and I_D = 0.35 mA. This makes it compatible with standard 3.3 V and 5 V logic-level gate drivers, ensuring full enhancement with minimal risk of partial turn-on in noisy environments.

How is thermal performance defined for TK7P60W, and what does R_th(ch-c) = 2.09 °C/W mean in practice?

The TK7P60W specifies a channel-to-case thermal resistance (R_th(ch-c)) of 2.09 °C/W. In practice, this means that with 10 W power dissipation and a heatsink maintained at 80°C, the junction temperature will rise by ~21°C - reaching ~101°C, well within the 150°C absolute maximum. Effective thermal design requires soldering the drain pad to ≥2 cm² of 2-oz copper with thermal vias.

TK7P60W,RVQ Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSIV

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 350µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 490 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

TK7P60W,RVQ FAQ

1.How can I place an order for TK7P60W,RVQ through Aetrix?

Please submit a Request for Quotation (RFQ) for TK7P60W,RVQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK7P60W,RVQ reliable?

The price and inventory of TK7P60W,RVQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK7P60W,RVQ is usually 5 days.

3.What payment methods are accepted for TK7P60W,RVQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK7P60W,RVQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK7P60W,RVQ?

TK7P60W,RVQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK7P60W,RVQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK7P60W,RVQ?

For technical support, including TK7P60W,RVQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK7P60W,RVQ requirements.

6.How does Aetrix verify that TK7P60W,RVQ is sourced from the original manufacturer or authorized distributors?

All TK7P60W,RVQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK7P60W,RVQ meets industry standards.

7.What is the process for return or replacement of TK7P60W,RVQ?

All TK7P60W,RVQ units undergo pre-shipment inspection (PSI). If there is an issue with TK7P60W,RVQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK7P60W,RVQ part is unused and in its original packaging.

Return procedure for TK7P60W,RVQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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