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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK7R2E15Q5,S1X

Name: TK7R2E15Q5,S1X
Brand: Toshiba Semiconductor and Storage
SKU: TK7R2E15Q5,S1X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK7R2E15Q5,S1X

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: TK7R2E15Q5,S1X.pdf

Description:: 150V UMOS10-HSD TO-220 7.2MOHM

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Product details

Overview

TK7R2E15Q5,S1X from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel U-MOS-H power MOSFET rated for 150 V V_DSS, 84 A continuous drain current, and 6 mΩ typical R_DS(ON) at V_GS = 10 V. It features fast reverse recovery (t_rr = 44 ns), low Q_rr (42 nC), and low gate charge (Q_SW = 20 nC), making it suitable for high-frequency synchronous rectification in DC-DC converters.

For engineers reviewing the TK7R2E15Q5,S1X datasheet, TK7R2E15Q5,S1X pinout, TK7R2E15Q5,S1X application, or TK7R2E15Q5,S1X equivalent, key selection criteria include its TO-220 package thermal performance (R_th(ch-c) = 0.64 °C/W), avalanche ruggedness (E_AS = 55 mJ), and enhanced body diode characteristics for motor drive freewheeling.

Technical Context

This MOSFET employs Toshiba's U-MOS-H trench-gate structure to achieve low on-resistance and fast switching with minimized Q_gd/Q_g ratio. Its gate threshold voltage range (3.1–4.5 V) supports standard 10 V gate drivers while maintaining robust noise immunity.

The integrated body diode exhibits controlled reverse recovery behavior-characterized by t_rr = 44 ns and Q_rr = 42 nC-enabling efficient operation in hard-switched and synchronous buck topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150 V - Supports input rails up to 120 V DC with margin for voltage spikes in industrial SMPS.
R_DS(ON)	6 mΩ (typ., V_GS = 10 V) - Enables <1 W conduction loss at 40 A, reducing heatsink requirements.
t_rr	44 ns (typ.) - Limits switching node ringing and EMI in >200 kHz DC-DC converters.
Q_SW	20 nC (typ.) - Reduces gate driver power demand and enables use of lower-cost 1-A peak drivers.
E_AS	55 mJ - Withstands single-pulse inductive energy during load dump or short-circuit events.
R_th(ch-c)	0.64 °C/W - Allows 150 W dissipation with ≤100 °C case rise, supporting compact TO-220 mounting.

Pinout & Package

TK7R2E15Q5,S1X is housed in a standard TO-220 package (TOSHIBA designation: 2-10X1A), with the drain connected internally to the metal tab for direct heatsinking. The package weighs 1.96 g and features screw-mount compatibility (0.6 N·m torque).

Pin/Terminal	Circuit Role	Design Meaning
1 (Lead)	Gate	High-impedance control terminal requiring <20 nC total gate charge for full enhancement.
2 (Tab/Heatsink)	Drain	Electrically connected to metal tab; must be isolated from chassis unless system ground-referenced.
3 (Lead)	Source	Reference node for gate drive; carries full load current and forms return path for body diode conduction.

Key Features

Feature	Design Value
U-MOS-H trench process	Delivers 6 mΩ R_DS(ON) in TO-220 without die size penalty, enabling higher power density than planar alternatives.
Optimized body diode	44 ns t_rr and 42 nC Q_rr reduce switching losses and voltage overshoot during freewheeling in motor drives.
Low Q_gd/Q_g ratio	Improves Miller immunity and enables stable operation with moderate gate resistance (4.7 Ω) at 200+ kHz.
Avalanche-rated	Guaranteed 55 mJ single-pulse E_AS allows reliable operation under inductive turn-off stress without snubbers.

Applications

High-Efficiency DC-DC Converters	Switching Voltage Regulators
Use Scenario: 48 V-to-12 V synchronous buck converter in telecom power shelves operating at 300 kHz. IC Role / Device Role / Timing Role: High-side power switch with fast turn-on/turn-off to minimize dead-time losses and improve light-load efficiency. Use Value: 6 mΩ R_DS(ON) and 20 nC Q_SW reduce both conduction and gate drive losses, enabling >95% peak efficiency.	Use Scenario: Point-of-load (POL) regulator supplying FPGA core voltage in industrial PLCs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier leveraging fast body diode recovery to replace external Schottky diodes. Use Value: 44 ns t_rr prevents cross-conduction and reduces output voltage ripple compared to standard MOSFETs.
Motor Drivers	Industrial Power Supplies
Use Scenario: Half-bridge H-bridge stage in 24 V BLDC motor controller for automated guided vehicles. IC Role / Device Role / Timing Role: Low-side switch handling bidirectional current during PWM-controlled regenerative braking. Use Value: Robust 84 A I_D rating and 175 °C T_ch limit support sustained 30 A RMS loads with minimal derating.	Use Scenario: Primary-side switch in 500 W AC-DC front-end with active PFC and LLC resonant stages. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC output stage, conducting high-current pulses with low duty cycle. Use Value: 0.64 °C/W R_th(ch-c) allows direct mounting to shared heatsink, simplifying thermal design versus SMD alternatives.

High-Efficiency DC-DC Converters

Switching Voltage Regulators

Use Scenario: 48 V-to-12 V synchronous buck converter in telecom power shelves operating at 300 kHz.

IC Role / Device Role / Timing Role: High-side power switch with fast turn-on/turn-off to minimize dead-time losses and improve light-load efficiency.

Use Value: 6 mΩ R_DS(ON) and 20 nC Q_SW reduce both conduction and gate drive losses, enabling >95% peak efficiency.

Use Scenario: Point-of-load (POL) regulator supplying FPGA core voltage in industrial PLCs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier leveraging fast body diode recovery to replace external Schottky diodes.

Use Value: 44 ns t_rr prevents cross-conduction and reduces output voltage ripple compared to standard MOSFETs.

Motor Drivers

Industrial Power Supplies

Use Scenario: Half-bridge H-bridge stage in 24 V BLDC motor controller for automated guided vehicles.

IC Role / Device Role / Timing Role: Low-side switch handling bidirectional current during PWM-controlled regenerative braking.

Use Value: Robust 84 A I_D rating and 175 °C T_ch limit support sustained 30 A RMS loads with minimal derating.

Use Scenario: Primary-side switch in 500 W AC-DC front-end with active PFC and LLC resonant stages.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC output stage, conducting high-current pulses with low duty cycle.

Use Value: 0.64 °C/W R_th(ch-c) allows direct mounting to shared heatsink, simplifying thermal design versus SMD alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N15F7	150 V, 110 A, R_DS(ON) = 5.5 mΩ (V_GS = 10 V); higher Q_g = 85 nC; TO-220FP package (isolated tab)	Higher current capability but larger gate drive requirement; better suited for lower-frequency, high-current inverters	Select when higher I_D margin is needed and gate drive strength permits higher Q_g.
IRF1407PBF	75 V, 110 A, R_DS(ON) = 7.5 mΩ (V_GS = 10 V); no specified t_rr or Q_rr; legacy TrenchMOS	Lower voltage rating limits use to ≤60 V systems; lacks optimized body diode for synchronous rectification	Acceptable only in non-synchronous or low-frequency (<100 kHz) applications where body diode performance is secondary.

Compared with STP110N15F7 and IRF1407PBF, TK7R2E15Q5,S1X offers superior high-frequency switching efficiency due to its lower Q_SW and characterized fast body diode, while maintaining competitive R_DS(ON) and avalanche ruggedness in the 150 V class.

Availability

TK7R2E15Q5,S1X is available at Aetrix Electronics and suitable for high-efficiency DC-DC converters, switching voltage regulators, and motor drivers requiring stable component supply and production-ready lead times.

Supply support for TK7R2E15Q5,S1X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on reliability, efficiency, and industrial-grade robustness.

The TK7R2E15Q5,S1X belongs to Toshiba's U-MOS-H series of high-voltage N-channel MOSFETs, engineered specifically for high-frequency, high-efficiency power conversion in industrial and automotive-qualified systems.

FAQ

What is the maximum continuous drain current rating for TK7R2E15Q5,S1X?

The TK7R2E15Q5,S1X has a maximum continuous drain current (I_D) rating of 84 A at T_c = 25 °C. This rating assumes proper heatsinking via the TO-220 drain tab and accounts for silicon-limited conduction capability. At elevated case temperatures, derating applies per the PD–T_c curve in the datasheet, with 130 A pulsed current allowed for short durations (t ≤ 100 µs).

Does TK7R2E15Q5,S1X have an avalanche-rated specification?

Yes, TK7R2E15Q5,S1X is fully avalanche-rated with a guaranteed single-pulse avalanche energy (E_AS) of 55 mJ under defined test conditions (V_DD ≈ 100 V, T_ch = 25 °C, L = 7.6 µH, I_AS = 84 A). This rating ensures robustness against inductive switching transients common in motor drive and DC-DC converter applications.

What is the gate threshold voltage range for TK7R2E15Q5,S1X?

The gate threshold voltage (V_th) for TK7R2E15Q5,S1X is specified from 3.1 V to 4.5 V at V_DS = 10 V and I_D = 1.4 mA. This range ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers while providing sufficient noise margin to prevent spurious conduction in noisy industrial environments.

Can TK7R2E15Q5,S1X be used as a synchronous rectifier?

Yes, TK7R2E15Q5,S1X is explicitly designed for synchronous rectification, featuring a fast, low-charge body diode with t_rr = 44 ns (typ.) and Q_rr = 42 nC (typ.). These parameters enable efficient replacement of Schottky diodes in buck, flyback, and LLC converters operating above 100 kHz without significant reverse recovery losses.

What thermal resistance does TK7R2E15Q5,S1X exhibit from channel to case?

The channel-to-case thermal resistance (R_th(ch-c)) of TK7R2E15Q5,S1X is 0.64 °C/W maximum. This low value reflects the direct thermal path from the silicon die to the TO-220 metal tab, allowing effective heat transfer to an external heatsink and supporting high-power operation with manageable temperature rise.

TK7R2E15Q5,S1X Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSX-H

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 130A (Ta), 84A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 7.2mOhm @ 42A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 1.4mA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4970 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: 175°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

TK7R2E15Q5,S1X FAQ

1.How can I place an order for TK7R2E15Q5,S1X through Aetrix?

Please submit a Request for Quotation (RFQ) for TK7R2E15Q5,S1X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK7R2E15Q5,S1X reliable?

The price and inventory of TK7R2E15Q5,S1X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK7R2E15Q5,S1X is usually 5 days.

3.What payment methods are accepted for TK7R2E15Q5,S1X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK7R2E15Q5,S1X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK7R2E15Q5,S1X?

TK7R2E15Q5,S1X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK7R2E15Q5,S1X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK7R2E15Q5,S1X?

For technical support, including TK7R2E15Q5,S1X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK7R2E15Q5,S1X requirements.

6.How does Aetrix verify that TK7R2E15Q5,S1X is sourced from the original manufacturer or authorized distributors?

All TK7R2E15Q5,S1X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK7R2E15Q5,S1X meets industry standards.

7.What is the process for return or replacement of TK7R2E15Q5,S1X?

All TK7R2E15Q5,S1X units undergo pre-shipment inspection (PSI). If there is an issue with TK7R2E15Q5,S1X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK7R2E15Q5,S1X part is unused and in its original packaging.

Return procedure for TK7R2E15Q5,S1X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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