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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK7R4A10PL,S4X

Name: TK7R4A10PL,S4X
Brand: Toshiba Semiconductor and Storage
SKU: TK7R4A10PL,S4X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK7R4A10PL,S4X

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: TK7R4A10PL,S4X.pdf

Description:: X35 PB-F POWER MOSFET TRANSISTOR

Quantity:: RFQ Add To RFQ list

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Product details

Overview

TK7R4A10PL,S4X from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel U-MOS-H power MOSFET optimized for high-efficiency DC-DC converters and switching voltage regulators. It delivers R_DS(ON) = 6.3 mΩ (typ., V_GS = 10 V), Q_SW = 13 nC (typ.), Q_oss = 47 nC (typ.), and supports 100 V V_DSS, 50 A I_D (DC) in TO-220SIS package.

For engineers reviewing the TK7R4A10PL,S4X datasheet, TK7R4A10PL,S4X pinout, TK7R4A10PL,S4X application, or TK7R4A10PL,S4X equivalent, key selection criteria include low gate/drain charge for high-frequency synchronous buck stages, robust avalanche rating (E_AS = 55 mJ), and thermal resistance R_th(ch-c) = 3.57 °C/W for thermally constrained industrial power designs.

Technical Context

This MOSFET employs Toshiba's U-MOS-H trench-gate process to achieve low conduction loss and fast switching with minimal Miller charge. Its enhancement-mode threshold (V_th = 1.5–2.5 V) enables direct drive from standard 3.3 V/5 V logic controllers, while the integrated body diode supports freewheeling in hard-switched topologies.

The device is rated for 100 V drain-source breakdown and features guaranteed single-pulse avalanche capability (I_AS = 50 A, E_AS = 55 mJ) under defined test conditions (V_DD = 80 V, L = 17 µH). Its TO-220SIS package provides isolated mounting with 2000 V_RMS isolation voltage and 0.6 N·m mounting torque specification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage for use in 48 V input DC-DC systems with 2× safety margin
R_DS(ON)	6.3 mΩ (typ., V_GS = 10 V) - Enables <1.6 W conduction loss at 25 A, reducing heatsink requirements
Q_SW	13 nC (typ.) - Low total switching charge supports >500 kHz operation with reduced gate driver power
Q_oss	47 nC (typ.) - Minimizes turn-off energy loss in high-side switch configurations
E_AS	55 mJ - Confirmed single-pulse avalanche energy for reliable operation during transient overloads
R_th(ch-c)	3.57 °C/W - Enables direct heatsink mounting with predictable junction-to-case thermal path

Pinout & Package

Package: TO-220SIS (TOSHIBA 2-10U1S), isolated case, 1.56 g typical weight, 2000 V_RMS isolation rating.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal requiring ≤20 V gate-source voltage; sensitive to ESD - must be handled with grounded tools
2	Drain	Main high-side current path; electrically connected to isolated metal tab - requires insulated mounting hardware
3	Source	Reference node for gate drive and current sensing; common return for load current in low-side configuration

Key Features

Feature	Design Value
U-MOS-H trench structure	Reduces R_DS(ON) × Q_g figure-of-merit by 35% vs. planar MOSFETs, enabling higher efficiency at 300–1000 kHz
Low Q_gd/Q_gs ratio	Q_gd = 11 nC, Q_gs1 = 21 nC - improves controllability during Miller plateau and reduces risk of shoot-through
Enhancement-mode V_th	1.5–2.5 V (V_DS = 10 V, I_D = 0.5 mA) - compatible with 3.3 V microcontroller GPIO without level-shifting
Integrated body diode	V_DSF = −1.5 V (typ., I_DR = 12.5 A) - supports synchronous rectification in flyback and buck-boost converters

Applications

Server VRM Power Stage	Industrial Motor Drive Inverter
Use Scenario: High-current, high-frequency buck converter supplying CPU core voltage in 1U server platforms. IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET in multiphase VRM, switching at 600 kHz with 25 A per phase. Use Value: Low R_DS(ON) and Q_SW reduce conduction and switching losses, improving VRM efficiency from 92% to 94.3% at full load.	Use Scenario: Three-phase inverter stage driving 750 W BLDC motor in factory automation PLC-controlled axis. IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid inverter leg, operating at 16 kHz PWM with 50 A peak current. Use Value: Robust avalanche rating and low Q_oss prevent failure during inductive kickback events during rapid deceleration.
Telecom 48 V DC-DC Converter	EV Onboard Charger Auxiliary Supply
Use Scenario: Isolated forward converter generating 12 V bias rails for telecom base station RF amplifiers. IC Role / Device Role / Timing Role: Primary-side active clamp switch handling 100 V bus transients and 20 A pulsed current. Use Value: TO-220SIS isolation and 2000 V_RMS rating eliminate need for additional creepage/clearance barriers in compact PCB layout.	Use Scenario: Secondary-side synchronous rectifier in LLC resonant converter powering control logic in 6.6 kW EV OBC. IC Role / Device Role / Timing Role: Fast-recovery body diode and low Q_rr (typ. 68 ns) minimize reverse recovery loss during zero-voltage switching transitions. Use Value: Q_rr = 68 ns and low V_DSF reduce diode conduction loss by 32% vs. discrete Schottky solution at 100 kHz.

Server VRM Power Stage

Industrial Motor Drive Inverter

Use Scenario: High-current, high-frequency buck converter supplying CPU core voltage in 1U server platforms.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET in multiphase VRM, switching at 600 kHz with 25 A per phase.

Use Value: Low R_DS(ON) and Q_SW reduce conduction and switching losses, improving VRM efficiency from 92% to 94.3% at full load.

Use Scenario: Three-phase inverter stage driving 750 W BLDC motor in factory automation PLC-controlled axis.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid inverter leg, operating at 16 kHz PWM with 50 A peak current.

Use Value: Robust avalanche rating and low Q_oss prevent failure during inductive kickback events during rapid deceleration.

Telecom 48 V DC-DC Converter

EV Onboard Charger Auxiliary Supply

Use Scenario: Isolated forward converter generating 12 V bias rails for telecom base station RF amplifiers.

IC Role / Device Role / Timing Role: Primary-side active clamp switch handling 100 V bus transients and 20 A pulsed current.

Use Value: TO-220SIS isolation and 2000 V_RMS rating eliminate need for additional creepage/clearance barriers in compact PCB layout.

Use Scenario: Secondary-side synchronous rectifier in LLC resonant converter powering control logic in 6.6 kW EV OBC.

IC Role / Device Role / Timing Role: Fast-recovery body diode and low Q_rr (typ. 68 ns) minimize reverse recovery loss during zero-voltage switching transitions.

Use Value: Q_rr = 68 ns and low V_DSF reduce diode conduction loss by 32% vs. discrete Schottky solution at 100 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP100N10F7	R_DS(ON) = 7.5 mΩ (V_GS = 10 V); Q_g = 42 nC; TO-220FP package (non-isolated)	Lacks isolation voltage rating; higher gate charge increases driver loss at >300 kHz	Prefer TK7R4A10PL,S4X where board-level isolation or high-frequency operation is required
IXTP50N10L2	R_DS(ON) = 10.5 mΩ; Q_oss = 72 nC; Logic-level V_th (1–2 V); TO-220AB	Higher conduction loss and output capacitance; no specified avalanche rating	Prefer TK7R4A10PL,S4X for avalanche-robust 100 V industrial SMPS designs

Compared with STP100N10F7 and IXTP50N10L2, TK7R4A10PL,S4X offers lower R_DS(ON), lower Q_oss, certified avalanche capability, and built-in isolation - making it optimal for space-constrained, high-reliability 48–100 V DC-DC and motor drive applications demanding thermal and electrical robustness.

Availability

TK7R4A10PL,S4X is available at Aetrix Electronics and suitable for high-efficiency DC-DC converters, switching voltage regulators, and motor drivers requiring stable component supply across automotive Tier-2 subsystems, industrial PLC power modules, and telecom infrastructure equipment.

Supply support for TK7R4A10PL,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with focus on energy efficiency and reliability for industrial and infrastructure markets.

The TK7R4A10PL,S4X belongs to Toshiba's U-MOS-H high-performance MOSFET product line, engineered specifically for high-frequency, high-current switching applications in server VRMs, telecom power supplies, and motor control inverters.

FAQ

What is the maximum continuous drain current rating for TK7R4A10PL,S4X at 25°C ambient?

The TK7R4A10PL,S4X has a DC drain current rating of 50 A at T_c = 25°C. This rating assumes proper heatsinking to maintain channel temperature ≤175°C. At elevated case temperatures or with limited thermal interface, derating is required per the PD–Tc curve in Figure 8.14 of the official datasheet. The TK7R4A10PL,S4X must not exceed its absolute maximum channel temperature under any operating condition.

Does TK7R4A10PL,S4X support gate drive from a 3.3 V microcontroller without level shifting?

Yes, TK7R4A10PL,S4X has an enhancement-mode threshold voltage range of 1.5–2.5 V (V_DS = 10 V, I_D = 0.5 mA), allowing reliable turn-on with 3.3 V logic. However, full R_DS(ON) performance (6.3 mΩ) requires V_GS ≥ 10 V. For optimal efficiency, a dedicated gate driver or level shifter is recommended when operating at high current or high frequency.

What is the significance of the TO-220SIS package designation for TK7R4A10PL,S4X?

The TO-220SIS package of TK7R4A10PL,S4X provides electrical isolation between the drain-connected metal tab and the PCB mounting surface, rated at 2000 V_RMS. Unlike standard TO-220AB, this isolation eliminates the need for insulating pads or bushings in high-voltage applications such as telecom power supplies and industrial inverters, simplifying mechanical design and improving long-term reliability.

How does the avalanche rating of TK7R4A10PL,S4X impact system-level design?

The TK7R4A10PL,S4X is characterized for single-pulse avalanche energy (E_AS = 55 mJ) and current (I_AS = 50 A) under defined test conditions. This rating allows the device to safely absorb inductive energy during fault events like short-circuit turn-off or transformer saturation, reducing reliance on external snubbers and improving system robustness in motor drives and DC-DC converters without sacrificing switching speed.

Is TK7R4A10PL,S4X RoHS compliant and lead-free?

Yes, TK7R4A10PL,S4X is RoHS compliant. Per Toshiba's marking note, underlined lot numbers indicate [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] status. The device meets Directive 2011/65/EU requirements. For full environmental compliance documentation including substance declarations and exemption status, contact Toshiba sales or refer to the official product page at toshiba.semicon-storage.com.

TK7R4A10PL,S4X Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.4mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2800 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 42W (Tc)

Operating Temperature:: 175°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220SIS

TK7R4A10PL,S4X FAQ

1.How can I place an order for TK7R4A10PL,S4X through Aetrix?

Please submit a Request for Quotation (RFQ) for TK7R4A10PL,S4X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK7R4A10PL,S4X reliable?

The price and inventory of TK7R4A10PL,S4X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK7R4A10PL,S4X is usually 5 days.

3.What payment methods are accepted for TK7R4A10PL,S4X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK7R4A10PL,S4X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK7R4A10PL,S4X?

TK7R4A10PL,S4X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK7R4A10PL,S4X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK7R4A10PL,S4X?

For technical support, including TK7R4A10PL,S4X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK7R4A10PL,S4X requirements.

6.How does Aetrix verify that TK7R4A10PL,S4X is sourced from the original manufacturer or authorized distributors?

All TK7R4A10PL,S4X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK7R4A10PL,S4X meets industry standards.

7.What is the process for return or replacement of TK7R4A10PL,S4X?

All TK7R4A10PL,S4X units undergo pre-shipment inspection (PSI). If there is an issue with TK7R4A10PL,S4X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK7R4A10PL,S4X part is unused and in its original packaging.

Return procedure for TK7R4A10PL,S4X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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